This thesis reports on the development of glass-based femtosecond laser sources around 2 µm wavelength. In order to be able to produce 2 µm radiation the dopants used were trivalent Thulium (Tm³⁺) and trivalent Holmium (Ho³⁺) that could be optically pumped with Ti:Sapphire radiation at 0.8 µm and semiconductor disk lasers (SDL) at 1.2 µm. The samples were produced at Leeds University and polished in-house in bulk form and deployed in free space laser cavities. Tellurite compounds doped with Tm³⁺ produced stable continuous wave 1.94 µm radiation when pumped at 800 nm with a maximum efficiency of 28.4% with respect to the absorbed power and maximum output power around 120 mW when pumped using a Ti:Sapphire operating around 0.8 µm. The radiation was broadly tunable across 130 nm. Tm³⁺-Ho³⁺ doubly doped tellurite samples lased around 2.02 µm with maximum efficiency of 25.9% and with P[subscript(OUT)]=75 mW and a smooth tunability of 125 nm. The fluorogermanate glass doped with Tm³⁺ gave an absorbed to output power efficiency of 50%. The maximum continuous wave output powers obtained were around 190 mW and limited by the available pump power at 0.8 µm. These results together with a very low threshold of 60 mW of incident power were comparable to the crystalline counterparts to this gain medium. The Tm3+ tellurite and the Tm³⁺-Ho³⁺ tellurite compounds were also pumped by an SDL operating at 1215 nm to obtain an indication of the viability of such a pump scheme. The results were a maximum internal slope efficiency of 22.4% with a highest output power of 60 mW. The comparison demonstrated that 1.2 µm pumping was competitive with using 0.8 µm wavelength. The use of semiconductor saturable absorbing mirror (SESAM) technology was used for the modelocking of these lasers. The SESAM was produced in Canada and implanted with As⁺ ions in order to reduce the relaxation time. Trains of transform-limited laser pulses at 222 MHz as short as 410 fs centred at 1.99 µm were produced for the first time with a bulk Tm³⁺:Fluorogermanate glass. The maximum average output power obtained was of 84 mW. The same SESAM deployed on the Tm³⁺-Ho³⁺ Tellurite compounds gave trains of transform-limited pulses as short as 630 fs at 2.01 µm with a repetition rate of 143 MHz and a maximum averaged output power of 43 mW. The regime of propagation obtained was soliton-like and the modelocking was self-starting. The results obtained with bulk glass were very promising and open interesting research pathways within the realm of amorphous bulk gain media.

Excitabilité et structures localisées sont des phénomènes universels qui ont été observés dans une grande variété de systèmes. Chacun des deux phénomènes a des propriétés intéressante pour des applications potentielles, surtout dans l'optique. L'excitabilité est la propriété intrinsèque du neurone, elle décrit sa réponse à une stimulation: pour des stimulations en-dessous d'un certain seuil, le neurone reste dans son état de repos mais quand la stimulation dépasse ce seuil, il émet une impulsion dont la taille ne dépend pas de la force de la stimulation. Les structures localisées dans les systèmes optiques sont des pics de surintensité qui coexistent avec un fond homogène sur la section transversale spatialement étendue d'une cavité laser. Dans cette thèse nous avons étudié l'apparition de ces deux phénomènes non-linéaires dans des microcavités à semi-conducteur, pour lesquelles les applications dans le traitement tout-optique de l'information sont prometteuse. En outre, nous avons étudié la possibilité de trouver un nouveau phénomène à l'intersection entre les deux: les structures localisées excitables. D'une part nous avons étudié les propriétés des structures localisées qui se forment dans un laser à solitons. Celui-ci est constitué par deux laser à semiconducteur à cavité verticale (VCSEL) mutuellement couplées dans une configuration de laser avec absorbant saturable (LSA). Nous observons l'émissions aléatoire et localisée d'impulsions que nous affirmons être la première évidence expérimentale de structures localisées excitables. D'autre part nous avons démontré le comportement excitable d'un laser avec signal injecté par la possibilité de contrôler les impulsions excitable grâce à une perturbation externe appropriée. Nous avons également réalisé des simulations numériques qui montrent l'existence des structures localisées excitables dans un modèle de VCSEL avec absorbant saturable. / Excitability and localized structures are universal phenomena, observed in various systems. Both possess interesting properties for potential applications, especially in optics. Excitability is the intrinsic property of the neuron defining its response to an external stimulus: for a sub-threshold stimulus the neuron stays quiescent; for a super-threshold stimulus, it emits a well-calibrated pulse independent on the strength of the stimulus. Localized structures in optics are bright intensity peaks coexisting with a homogeneous low intensity background. They appear in the transverse section of spatially-extended laser resonators. We study the occurrence of these nonlinear phenomena in semiconductor microcavities since the applications in all-optical processing of information are promising. Moreover we investigate the possibility of a novel kind of localized structure which stands at the intersection of these two phenomena: the excitable localized structures. On the one hand we study the properties of localized structures arising from a cavity soliton laser composed of two mutually coupled broad-area VCSELs in a LSA (Laser with Saturable Absorber) configuration . We report on the observation of a random and localized emission of pulses which we claim to be the first experimental evidence of noise-triggered excitable localized structures whose excitability is induced by inhomogeneities and drift. On the other hand we demonstrate the excitability in an optically injected laser by showing the control of excitable pulses by means of an external perturbation. We also perform numerical simulations which reveal the existence of excitable localized structures in a model of broad area VCSEL with saturable absorber.

Semiconductor lasers based on gallium arsenide and relatedmaterials are widely used in applications such as opticalcommunication systems, sensing, compact disc players, distancemeasurement, etc. The performance of these lasers can beimproved using a buried heterostructure offering lateralcarrier and optical confinement. In particular, if theconfinement (burying) layer is implemented by epitaxialregrowth of an appropriate aluminium-free semi-insulating (SI)material, passivation of etched surfaces, reduced tendency tooxidation, low capacitance and integration feasibility areadditional advantages. The major impediment in the fabrication of GaAs/AlGaAsburied-heterostructure lasers is the spontaneous oxidation ofaluminium on the etched walls of the structure. Al-oxide actsas a mask and makes the regrowth process extremely challenging.In this work, a HCl gas-basedin-situcleaning technique is employed successfully toremove Al-oxide prior to regrowth of SI-GaInP:Fe and SI-GaAs:Fearound Al-containing laser mesas by Hydride Vapour PhaseEpitaxy. Excellent regrowth interfaces, without voids, areobtained, even around AlAs layers. Consequences of usinginadequate cleaning treatments are also presented. Regrowthmorphology aspects are discussed in terms of different growthmechanisms. Time-resolved photoluminescence characterisation indicates auniform Fe trap distribution throughout the regrown GaInP:Fe.Scanning capacitance microscopy measurements demonstrate thesemi-insulating nature of the regrown GaInP:Fe layer. Thepresence of EL2 defects in regrown GaAs:Fe makes more difficultthe interpretation of the characterisation results in the nearvicinity of the laser mesa. GaAs/AlGaAs buried-heterostructure lasers, both in-planelasers and vertical-cavity surface-emitting lasers, withGaInP:Fe as burying layer are demonstrated for the first time.The lasers exhibit good performance demonstrating thatSI-GaInP:Fe is an appropriate material to be used for thispurpose and the suitability of our cleaning and regrowth methodfor the fabrication of this type of semiconductor lasers.Device characterisation indicates negligible leakage currentalong the etched mesa sidewalls confirming a smooth regrowthinterface. Nevertheless, experimental and simulation resultsreveal that a significant part of the injected current is lostas leakage through the burying material. This is attributed todouble carrier injection into the SI-GaInP:Fe layer.Simulations also predict that the function of GaInP:Fe ascurrent blocking layer should be markedly improved in the caseof GaAs-based longer wavelength lasers. <b>Keywords:</b>semiconductor lasers, in-plane lasers, VCSELs,GaAs, GaInP, semi-insulating materials, hydride vapour phaseepitaxy, regrowth, buried heterostructure, leakage current,simulation.

<p>Semiconductor lasers based on gallium arsenide and relatedmaterials are widely used in applications such as opticalcommunication systems, sensing, compact disc players, distancemeasurement, etc. The performance of these lasers can beimproved using a buried heterostructure offering lateralcarrier and optical confinement. In particular, if theconfinement (burying) layer is implemented by epitaxialregrowth of an appropriate aluminium-free semi-insulating (SI)material, passivation of etched surfaces, reduced tendency tooxidation, low capacitance and integration feasibility areadditional advantages.</p><p>The major impediment in the fabrication of GaAs/AlGaAsburied-heterostructure lasers is the spontaneous oxidation ofaluminium on the etched walls of the structure. Al-oxide actsas a mask and makes the regrowth process extremely challenging.In this work, a HCl gas-based<i>in-situ</i>cleaning technique is employed successfully toremove Al-oxide prior to regrowth of SI-GaInP:Fe and SI-GaAs:Fearound Al-containing laser mesas by Hydride Vapour PhaseEpitaxy. Excellent regrowth interfaces, without voids, areobtained, even around AlAs layers. Consequences of usinginadequate cleaning treatments are also presented. Regrowthmorphology aspects are discussed in terms of different growthmechanisms.</p><p>Time-resolved photoluminescence characterisation indicates auniform Fe trap distribution throughout the regrown GaInP:Fe.Scanning capacitance microscopy measurements demonstrate thesemi-insulating nature of the regrown GaInP:Fe layer. Thepresence of EL2 defects in regrown GaAs:Fe makes more difficultthe interpretation of the characterisation results in the nearvicinity of the laser mesa.</p><p>GaAs/AlGaAs buried-heterostructure lasers, both in-planelasers and vertical-cavity surface-emitting lasers, withGaInP:Fe as burying layer are demonstrated for the first time.The lasers exhibit good performance demonstrating thatSI-GaInP:Fe is an appropriate material to be used for thispurpose and the suitability of our cleaning and regrowth methodfor the fabrication of this type of semiconductor lasers.Device characterisation indicates negligible leakage currentalong the etched mesa sidewalls confirming a smooth regrowthinterface. Nevertheless, experimental and simulation resultsreveal that a significant part of the injected current is lostas leakage through the burying material. This is attributed todouble carrier injection into the SI-GaInP:Fe layer.Simulations also predict that the function of GaInP:Fe ascurrent blocking layer should be markedly improved in the caseof GaAs-based longer wavelength lasers.</p><p><b>Keywords:</b>semiconductor lasers, in-plane lasers, VCSELs,GaAs, GaInP, semi-insulating materials, hydride vapour phaseepitaxy, regrowth, buried heterostructure, leakage current,simulation.</p>

Quantum cascade lasers (QCLs) operate due to population inversion on intersubband in unipolar mutiple-quantum-well (MQW) heterostructure. QCLs are considered one of the most flexible and powerful light semiconductor sources in the mid- and far-infrared (IR) wavelength range, covering most of the critical spectral regions relevant to IR applications. InGaAs/InAlAs/InP QCLs are the only semiconductor lasers capable of continuous wave (CW) operation at room temperature (RT) in the spectral range 3.4-12 micron. This dissertation details the development of RT QCLs based on passive nonlinear coupled-quantum-well structures monolithically integrated into mid-IR QCLs to provide a giant nonlinear response for the pumping frequency. The primary focus of short-wavelength approach in this dissertation is to develop of RT InGaAs/InAlAs/InP QCLs for lamda=2.5-3.7 micron region, based on quasi-phase-matched intracavity second harmonic generation (SHG) associated with intersubband transition. Intersubband optical transition can be engineered by the choice of quantum well and barrier thicknesses to provide the appropriate energy levels, optical dipole matrix elements, and electron scattering rates amongst other parameters. Thus, aside from their linear optical properties, resonant intersubband transitions in coupled QW's can also be designed to produce nonlinear optical medium with giant nonlinear optical susceptibilities. In long-wavelength region, at high temperature, the population inversion is reduced between the upper and lower laser levels due to the longitudinal optical (LO) phonon scattering of thermal carriers in the upper laser state and the thermal backfilling of carriers into the lower laser level from the injector state. This dissertation aims to improve an alternative approach for THz QCL sources based on intra-cavity difference frequency generation (DFG) in dual-wavelength mid-IR QCLs with a passive nonlinear structure, designed for giant optical nonlinearity. Further studies describe that Cerenkov DFG scheme allows for extraction of THz radiation along the whole length of the laser waveguide and provides directional THz emission in 1.2-4.5 THz range. An important requirement for many applications, like chemical sensing and molecular spectroscopy, is single-mode emission. We demonstrate single-mode RT DFG THz QCLs operation in 1-5 THz region by employing devices as integrated dual-period DFB lasers, where efficient solid state RT sources do not exist. / text

This thesis proposes a new method for the generation of continuous spectra with possible applications in optical WDM access networks. This new method would allow the development of a continuum laser type structure with better performances in terms of cost and simplicity compared to the current supercontinuum sources. For this purpose, we have analyzed the possibility of extending the resonant modes of a Fabry-Perot cavity acting only on the design of one of the cavity mirrors. The design of the mirror is generated with a genetic algorithm targeting a desired reflectivity spectrum. An active medium is then added inside the cavity formed with the synthesized mirror and the cavity's emission is simulated below the lasing threshold. The spectra thus obtained are continuous on an interval of 5 to 15 nm.

An efficient simulation technique for calculating the current distribution in a Vertical Cavity Surface Emitting Laser (VCSEL) is proposed and implemented. The technique consists of a hybrid 1D/3D approach to the problem. The 3D aspect of simulation is essential for devices like a photonic crystal VCSEL where the existing 2D simulation techniques are inadequate. The modular approach of the technique is advantageous, as it provides exibility in dealing with device simulations of varying complexity. It also provides a relatively short simulation time, beneficial for exploring a large design parameter space. The box integration technique is used for discretizing the equations and sparse matrix methods are used in solving the matrices. Simulation results and comparisons are provided for various aspects and modules of the simulator. The results for a few sample simulations indicate that the analysis has reasonable agreement with experimental results. The simulation error can be reduced using more accurate models for the active region of the laser.

Ces trois années de thèse balayent la conception, la fabrication et la caractérisation de lasers III V sur silicium à 1.31 µm pour les data-communications. Le design des sources englobe notamment l’optimisation du couplage entre l’empilement III V et le silicium, effectué grâce à un taper adiabatique, ainsi que l’étude de la cavité laser inscrite, comme le taper, dans le silicium. Trois types de cavités à base de réseaux ont été étudiées: les cavités à contre-réaction distribuée (DFB pour distributed feedback), celles à réseaux de Bragg distribuées (DBR pour distributed Bragg reflector) et enfin celles à réseaux de Bragg échantillonnées (SGDBR pour sampled-grating DBR). Deux solutions ont été abordées concernant les lasers DFB: le réseau, inscrit dans le guide silicium sous la zone de gain, est soit gravé au-dessus du guide Si, soit sur les côtés. La seconde possibilité, appelée ‘DFB lasers couplés latéralement’, simplifie la fabrication et élargit les possibilités de design.Les lasers DFB fabriqués sont très prometteurs en terme de puissance (avec jusque 20 mW dans le guide) ainsi que pour leur pureté spectrale (avec une différence de plus de 50 dB entre le mode principal et le mode suivant). Une accordabilité spectrale de plus de 27 nm a été obtenue en continu avec les lasers SGDBR tout en conservant une très bonne pureté spectrale et une puissance de plus de 7 mW dans le guide. / This 3 years work covers the design, the process and the characterization of III-V on silicon lasers at 1.31 µm for datacommunication applications. In particular, the design part includes the optimization of the coupling between III V and Si using adiabatic tapers as well as the laser cavity, which is formed within the Si. Three types of lasers were studied, all of them based on cavities which consist of gratings: distributed feedback (DFB) lasers, distributed Bragg reflector (DBR) lasers and finally sampled-grating DBR (SGDBR) lasers. Regarding the DFB lasers, two solutions have been chosen: the grating is either etched on top or on the edges of the Si waveguide to form so called vertically or laterally coupled DFB lasers. The latter type, quite uncommon among hybrid III V on Si technologies, simplifies the process fabrication and broadens the designs possibilities.Not only the lasers demonstrated show high output powers (~20 mW in the waveguides) but also very good spectral purities (with a side mode suppression ratio higher than 50 dB), especially for the DFB ones. The SGDBR devices turn out to be continuously tunable over a wavelength range higher than 27 nm with a good spectral purity as well and an output power higher than 7 mW in the waveguide with great opportunities of improvement.

[pt] Neste trabalho apresenta-se a implementação de um sistema de medição de pulsos ópticos curtos gerados por lasers semicondutores. Através de uma técnica indireta de medida, que usa a radiação de segundo harmônico gerada internamente nesses lasers, a duração dos pulsos curtos de luz é estimada. São apresentadas as principais considerações teóricas e experimentais envolvidas com a emissão de segundo harmônico em diodos lasers e são discutidas as principais limitações da técnica. Mostra-se que embora a determinação exata da duração dos pulsos exija medidas adicionais, é possível inferir com boa resolução temporal a duração de pulsos ópticos gerados nos regimes de chaveamento de ganho e mode-locking. / [en] In this work the implementation of a measurement system of short optical pulses generated by semiconductor lasers is presented. This indirect method estimates the pulse duration using the internally generated second harmonic radiation from these lasers. The main theoretical and experimental considerations related with the second harmonic emission are also presented. Although the precise pulse duration requires aditional measurements it is possible to estimate the duration of optical pulses generated by gain-switching and mode-loching regimes with good time-resolution.

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