111 |
Preparation and uses of sterically hindered silyllithium reagents, halosilanes and oligosilanesSmith, Colin Michael January 1995 (has links)
No description available.
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112 |
Stereocontrolled synthesis using organosilanesDaly, Matthew John January 1996 (has links)
No description available.
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113 |
Dust and molecules in carbon starsDuigan, Barbara Lynn January 2002 (has links)
No description available.
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114 |
Electrical transport calculations for off-axis siliconWright, K. T. January 1986 (has links)
No description available.
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115 |
Vibrational spectroscopic studies of adsorbates on metal and silicon single crystal surfacesHorn, Andrew B. January 1989 (has links)
No description available.
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116 |
Alternative methods for the formation of chemically bonded phases for liquid chromatographyNortey, Philip Tetteybuah January 2000 (has links)
No description available.
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117 |
Fundamentals underlying the formation of thin films from the thermolysis of selected Group IV organometallic precursorsTorr, Ashley Carl January 1994 (has links)
No description available.
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118 |
Thermal shock resistance of sintered alumina/silicon carbide nanocompositesMaensiri, Santi January 2001 (has links)
No description available.
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119 |
The performance of SCT128A ASICs when reading out silicon sensors and a study of Bâ°[subscript s below the zero] [right pointing arrow] D[âºorâ»][subscript s below the plus or minus symbol][pi][â»orâº] at LHCbCharles, Matthew John January 2003 (has links)
No description available.
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120 |
Formulation of the anisotropic coarsening theory and applications to the liquid-phase sintering of Si3N4.Salagaram, Trisha. January 2002 (has links)
We have developed a new coarsening theory that more completely describes grain growth of a system of anisotropic particles such as completely faceted crystals by Ostwald ripening. Our model takes the anisotropy of surface energies on dissimilar facets into account, and the particle sizes are described by a distribution function. The theory is applied to study the coarsening of ,B-silicon nitride in a liquid medium due to the anisotropic growth of grains in different crystallographic directions. A model of the growth of silicon nitride grains is obtained based on the
numerical solution of the equations of the new theory.
Computer experiments are performed to determine how the distribution function evolves, to investigate the influence of various parameters such as diffusion and interfacial reaction constants on grain growth and to extract grain growth exponents from this model in order to determine the growth mechanisms that are responsible for the anisotropic growth behaviour. Only preliminary numerical results are available thus far due to 1/r instabilities that occur in the theory as r → 0. / Thesis (M.Sc.)-University of Natal, Pietermaritzburg, 2002.
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