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351	Surface Passivation of Crystalline Silicon by Dual Layer Amorphous Silicon Films Stepanov, Dmitri 25 August 2011 (has links) The probability of recombination of photogenerated electron hole pairs in crystalline silicon is governed by the density of surface defect states and the density of charge carriers. Depositions of intrinsic hydrogenated amorphous silicon (a-Si:H) in dc saddle field (DCSF) PECVD system and hydrogenated amorphous silicon nitride (SiNx) in rf PECVD system forms a dual layer stack on c-Si, which results in an excellent passivation of the surface and an anti-reflection coating. Response Surface Methodology is used in this work to optimize the deposition conditions of SiNx. Optimization of the response surface function yielded deposition conditions that materialized in a surface recombination velocity of less than 4cm/s. The BACH (Back Amorphous Crystalline silicon Heterojunction) cell concept makes use of this dual layer a-Si:H/SiNx stack to form a high efficiency photovoltaic device. The high quality passivating structure can result in the BACH solar cell device with more than 20% conversion efficiency. surface passivation amorphous silicon silicon nitride high efficiency solar cell
352	Defect studies of ion implanted silicon and silicon dioxide for semiconductor devices Lay, Matthew Da-Hao Unknown Date (has links) (PDF) We have studied the introduction of defects in silicon wafers with low dose channelling ion implantation. (For complete abstract open document)
353	Electronic properties and reliability of the SiO₂/SiC interface Rozen, John. January 1900 (has links) Thesis (Ph. D. in Interdisciplinary Materials Science)--Vanderbilt University, May 2008. / Title from title screen. Includes bibliographical references.
354	The formation of silicon nanoparticles on silicon-on-insulator substrate by thermal annealing Anyamesem-Mensah, Benedict, January 1900 (has links) Thesis (M.S.)--Texas State University-San Marcos, 2007. / Vita. Appendices: leaves 69-80. Includes bibliographical references (leaves 81-83).
355	Studies of Si/SiO₂ heterostructures using second harmonic generation Lu, Xiong. January 2008 (has links) Thesis (Ph. D. in Physics)--Vanderbilt University, Aug. 2008. / Title from title screen. Includes bibliographical references.
356	High temperature oxidation of silica formers in dissociated oxygen Vora, Nirav D. January 2009 (has links) Thesis (Ph. D. in Chemical Engineering)--Vanderbilt University, May 2009. / Title from title screen. Includes bibliographical references.
357	The defect level of carbon vacancy carbon antisite pair in 4H-SiC photo induced electron paramagnetic resonance Ngetich, Geoffrey. January 2008 (has links) (PDF) Thesis (M.S.)--University of Alabama at Birmingham, 2008. / Description based on contents viewed Feb. 11, 2009; title from PDF t.p. Includes bibliographical references (p. 49-50).
358	Silicon biogeochemistry in the open-ocean surface waters : insights from the Sargasso Sea and equatorial Pacific / Krause, Jeffrey W. January 1900 (has links) Thesis (Ph. D.)--Oregon State University, 2008. / Printout. Includes bibliographical references (leaves 173-191). Also available on the World Wide Web.
359	Silicon heterojunction solar cell and crystallization of amorphous silicon Lu, Meijun. January 1900 (has links) Thesis (Ph.D.)--University of Delaware, 2008. / Adviser: Robert Birkmire. Includes bibliographical references.
360	The low temperature oxidation behavior of Si(₁-[subscript x]) Ge[subscript x] thin films in a fluorinated ambient / Kilpatrick, Stephen James, January 1997 (has links) Thesis (Ph. D.)--Lehigh University, 1997. / Includes vita. Bibliography: leaves 266-279.

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