ABSTRACT In this thesis we deposit GaN films by magnetron rf sputtering with changes substrate temperature. The electron probe microscope analysis ( EPMA ), scanning electron microscope ( SEM ), photoluminescence measurement ( PL ) and X-ray diffraction ( XRD ) had been used to investigate these GaN films. We find GaN films crystalline quality deposit at low temperature is better then deposit at high temperature. From EPMA analysis we know higher substrate temperature lower oxygen amount of film. The ratio of Ga to N is 1.18 ~ 1.83 in average. The growth rate is about 0.30 £gm/h ~ 0.35 £gm/h in average. Thus changes substrate temperature do not influence growth rate obviously. From SEM and EDS analysis we find the roughness magnitude of films growth on sapphire substrate was smaller than the films growth on silicon substrate. We also find lower substrate temperature the roughness magnitude of films larger on silicon substrate.

Abstract There has been much interest in colossal magnetoresistance in doped maganite peroviskite meterials.(La,A)MnO3 thin film have been fabricated by off-axis RF magnetron sputtering techhique. The Growth mechanical of (La,A)MnO3 A=Ca,Sr in Different growth temperatures on substrate and different annealing temperatures reveals the observably different results on its structure and electrical transport properties. Due to the lattice mismatch between substrates and bulk,strain has been a important factors of magnetic resistance and electrical properties. Different thickness of La0.67Ca0.33MnO3 thin film were grown on (001)SrTiO3 and(001)MgO substrates at growth temperature 750 degree C ,it has shown systematic variations to film thickness in magnetic and electrical transport properties.

In this experiment the characteristics and microstructure of ZrN films between Si and Cu or Al were investigated. The ZrN films were deposited by RF magnetron reactive sputtering system. The ZrN films were annealed at various temperatures in order to observe the grain growth and the inter-diffusion of atoms between interfaces. X-ray analysis showed that in the ZrN/Al system the ZrN film has¡]220¡^preferred orientation after annealing at 600¢J for 1 hour. In the Al/ZrN/Si system of the same annealing condition, the ZrN film showed ¡]200¡^preferred orientation with the concurrent formation of the ZrSi2 and AlN phases. In the Cu/ZrN/Si system, the Cu film showed ¡]111¡^preferred orientation after annealing at 700¢J for 1 hour. TEM analysis showed that in the ZrN/Al system there were no Al-Zr compound was found after annealing at 600¢J for 1 hour. In the Al/ZrN/Si system, although ZrSi2¡BAlN and£\-Si3N4 were present after annealing at 600 ¢J for 1.5 hour, but the diffusion barrier is still effective. In the Cu/ZrN/Si system the CuZr2 was formed after annealing at 700¢J for 1 hour, but the diffusion barrier is also still effective. The results up to now suggest that ZrN layer can be a successful candidate as a diffusion barrier between Si and Cu or Al.

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In this thesis, we focus on the properties of Al-doped ZnO (AZO) thin films for opto-electronic applications. AZO films were prepared by radio-frequency sputtering on silicon and optical glass substrates with 98wt% ZnO and 2wt% Al2O3 alloy target. AZO films were prepared under various deposition parameters (RF power, background pressure, Ar flow, and substrate temperature). The optimal parameters for the conductive and transparent AZO films are power = 100W, pressure = 3mTorr, Ar flow = 5sccm, and substrate temperature 250¢J. The film exhibits the resistivity(£l) of 2.5¡Ñ10-3 Ω-cm and 85% transparency in the 400-1800nm range. To find out optimum substrate temperature for the AZO film on p-GaAs (p=2¡Ñ1018), the samples were deposited at various temperatures followed by annealing at 400¢J for 30sec. The current-voltage (I-V) characteristics were measured. AZO films make good ohmic contact to p-GaAs to act as an electrode layer. InGaAs quantum-dot solar cells of AZO contact layers have been fabricated. A high filling factor of 52% is achieved.

In this study, the reactive rf magnetron sputtering was used to deposit P- and N-type zinc oxide (ZnO) thin films, Zinc oxide (ZnO) has higher exiton bindingenergy (60 meV) and high band gap (~3.4 eV) that can provide efficient ultraviolet (UV) light at room temperature (RT). Intrinsic ZnO is thought to be N-type primarily because of donor defects such as zinc interstitials (Zni) and oxygen vacancies (VO). we want to prepared N-doped ZnO (ZnO:N) films, we used two method : Deposition Zn3N2 films by dc sputtering of Zn target in proportional Ar and N2 mixture. After deposition, it were thermally oxidized at difference temperatures to prepared N-doped ZnO (ZnO:N) films. And to make use of rf sputtering that ZnO target in proportional Ar and N2 mixture, to prepared N-doped ZnO (ZnO:N) films. The physical characteristics of ZnO thin films with different parameter were obtained by the analyses of field emission scanning electron microscopic (FE-SEM) and XRD. The electron spectroscopy for chemical analysis (ESCA) was used to analyze the chemical states of ZnO thin films. In optical properties, the photoluminescence spectrometer was used to measure the photoluminescence characteristics (PL).

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