Transparent conductive aluminum-doped zinc oxide(AZO) thin films were synthesized by reactive RF magnetron co-sputtering system with metallic zinc and aluminum targets under oxygen atmosphere. Systematic study on the fixed sputtering power of the Zinc target (PZn) and the variation of the sputtering power of the Aluminum target (PAl) on structural, electrical and optical properties of AZO thin film was mainly investigated in this work. We found that the microstructure of AZO films would be obviously transformed from rice-like crystalline structure to nanocrystalline (nano-column) structure with the increasing of the sputtering power of the Aluminum target (PAl) . Nanocrystalline AZO films were formed at the specific sputtering power ratio of metallic targets (PAl/ PZn=1) . X-ray diffraction (XRD) spectra revealed that nanocrystalline AZO films highly preferred c-axis orientation (002) was growth in perpendicular to the substrate. The optical refractive index (n) of nanocrystalline AZO films had significantly lower values than others of microstructure AZO films, and this suggested the low optical dispersion in nano-column structure . Furthermore, the electronic properties of AZO films with the proper sputtering power of the Aluminum target (PAl) evidently improved under rapid temperature annealing (RTA) process. It suggested that both high annealing temperature(400¢J) and rapid cooling time(15min) are main factors to decrease the sheet resistances due to the maintenance of high temperature structural phase. The results of X-ray photoelectron spectroscopy (XPS) show that RTA process can decrease oxidized Al in order to decrease the sheet resistances.

Polycrystalline AlN thin films were reactively deposited onto Al layers on negatively biased glass and Si substrates at temperatures < 80 oC by coherent magnetron sputtering. The target-to-substrate distance is 17 cm. The microstructures and morphology of the films grown at different bias voltages on the substrates were investigated. Typical thickness of the deposited film is 600 nm. The films were amorphous when no bias was applied to the substrates. Diffraction peak of AlN (002) direction was observed at bias voltages of -180 and -210 V. At a bias voltage of -210 V, the (002) granular crystal with the maximum diameter of 80 nm was obtained. In addition to the AlN (002) direction, AlN (100) direction was observed when the bias voltage was increased to -240 and -270 V. The peak of (002) plane vanished at a bias voltage of -320 V. Moreover, the deposited AlN films have specular reflectance owning to the large target-to-substrate distance. The maximum roughness of the films was 47.2¡Ó5.0 nm at a bias voltage of -210 V. The hardness and microstructure of aluminum nitride (AlN) thin films prepared by long-distance magnetron sputtering at room temperature has been investigated. The hardness and microstructure of the films were found to vary greatly with different substrate biases. At a bias voltage of ¡V210 V, the (002) polycrystalline AlN with the maximum hardness of 17.5 GPa was observed. The water droplet contact angle under this bias condition is larger than 90¢X indicating that hydrophobicity can be obtained at the film surface. In addition, hardness of (002) AlN films prepared by sputtering of AlN target at room temperature and by reactive sputtering of Al target at 400¢XC were discussed and compared with that of AlN films prepared by long-distance reactive sputtering.

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Hole-doped manganite La0.7Ca0.3MnO3 materials has been extensively studied because of its colossal magnetoresistance (CMR) characteristic in a magnetic field. Recently, a new member of CMR family La0.7Ce0.3MnO3 , an electron-doped manganite, raises a new wave of attention for possible application of p-n junctions. Single Phase La0.7Ce0.3Mn3 films were usually grown by the pulse laser deposition (PLD) technique with a relatively narrow growth window around 755¢J¡Ó5¢J. In this study, we use a RF sputtering technique to grow La0.7Ce0.3Mn3 epitaxial films, which has not been tried yet. Films are grown on SrTiO3, MgO and LaAlO3 substrates. The best film have the metal-insulator transition temperature (TP) 304K and the curie temperature (TC) 310K, which are higher than that of grown by PLD method

Silicon and silicon nitride thin films were growth on Si and glass substrates at room temperature by ratio-frequency (r-f) magnetron sputtering. The electrical characteristics of the silicon nitride films were characterized using I-V and C-V measurement under different growth condition, including r-f power, nitrogen partial pressure, and hydrogen partial pressure. Minimum current leakages for MIS structure as low as 2¡Ñ10 A/cm were obtained at 1 MV/cm electrical field with hysteresis voltage about 2V. The root-mean square surface roughness of the silicon nitride film is less then 1nm. In addition, silicon nitride capacitors with indium-tin-oxide as electrodes were fabricated. Silicon thin films prepared by R.F. magnetron sputtering at room temperature are amorphous. The measurements on the variation of the photo-conductivity were used to characterize the characteristics of the Si film.

In this study, Mg-Cu thin film metallic thin films were fabricated via two ways, the co-deposition and post-annealing of the multilayered thin films. Amorphous Mg1-xCux, where x is from 38 to 82, thin films with nanocrystalline particles are able to be fabricated via co-sputtering. The mechanism of formation is different from the rapid quenching process. For the Mg-Cu co-sputtering system, the mechanical properties of the Mg-Cu co-sputtered films were tested via MTS nanoindenter. Mg23.5Cu76.5 exhibits a higher Young¡¦s modulus than Mg17.7Cu82.3 and Mg40.4Cu59.6 due to the partial amorphous structure. Moreover, the pop-in effects with a smaller size occurs of the Mg23.5Cu76.5 sample in a higher frequency than of the Mg17.7Cu82.3 and Mg40.4Cu59.6 samples. The small pop-in effects in the Mg23.5Cu76.5 sample approximate match the width of amorphous matrix via the HRTEM observation. Another process to form the amorphous thin film is via the post isothermal annealing process of the multilayered thin films. However, for the specimens of 20T32 consisting of 150-nm Mg and 50-nm Cu individual layers, the Mg individual layers would react to the Cu individual layers during the annealing at a temperature of 413 K owning to the slight negative heat of mixing. Due to the localized diffusion near the interfaces, Mg2Cu gradually form during the isothermal annealing since Mg2Cu is the most stable phase below 548 K [62]. Localized interdiffusion near the interfaces between Mg and Cu individual layers induced the formation of Mg2Cu rapidly. For the 40T32 specimens consisting of 15 nm Mg and 5 nm Cu individual layers, Mg2Cu rapidly form at 413 K due to the high interface energy. Then, the similar result exhibits in the 20T14 and 40T14 specimens annealed at 363 K.

DLC exhibits an extreme hardness, chemical stability and optical transparency properties, which are, to a certain extent, similar to those of diamond and thus of technological importance. In the case of amorphous hydrogenated carbon (a-C:H) films they can be interpreted as intermediate between diamond, graphite, and polymer-like carbon sites. The most important intrinsic hardness is protection of tools or machine parts against wear. Most modifications have been used on DLC to enhanced mechanical properties, such as reducing its internal compressive stress (N, Si, and metal incorporation), or to reduce its surface energy for further lowering of its already low friction coefficient with 0.1. Among various deposition techniques, microwave generated discharges, especially electron cyclotron resonance (ECR) plasmas, develop excellent a high degree of ionization, high ions densities. In this work, a novel hybrid technique for diamond-like carbon (DLC) film deposition has been developed, which combines the microwave ECR plasma discharging C2H2 and metallic magnetron sputtering. The effects of negative bias voltage and hydrocarbon flow rate for the deposition of a-C:H films on high speed steel were examined by Raman spectra, and their hardness was investigated by the Rockwell method. The Raman spectra show that at different hydrocarbon flow rate, the variation of the G line peak and width, and the integrated intensity ratio ID/IG of DLC and graphic, correlate well with the film hardness. Consequently, we suggest a deposition mechanism of DLC for this combined method.

Reactive Sputtering is a widely used technique in processing of thin compound films. Such films can be sputtered from metal targets, which are comparatively cost efficient. Also the fact that sputtering from metal targets can ccur in the dc mode reduces the cost of the sputtering equipment. To keep the deposition process stable, its necessary to know the effects of target poisoning including its hyteresis behavior. The aim of this work was to nvestigate the evolution of reactive gas coverage on a titanium magnetron target surface, by real time, in-situ ion beam analysis during magnetron sputtering. A cylindrical 2 inch magnetron was used for reactive sputtering of TiN. It was operated in an Ar/N2 gas mixture at achamber pressure of about 3∙10-3 mbar. The argon/nitrogen flux ratio was variated between 0 and 20%. The nitrogen concentration on the target was determinated using the 14N(d, α)12C, nuclear reaction at a deuterium beam energy of 1.8 MeV. Depending on the adjusted nitrogen flow the target incorporation varies between 0 and about 1∙1016 N∙cm-2. Further the expected hysteresis behaviour ofnitrogen partial pressure, target voltage and nitrogen concentration at increasing/decreasing nitrogen gas flow is confirmed. The lateral distribution of nitrogen was measured across the diameter of target surface. In the zone of higher erosion (the \"race track\") the nitrogen concentration is 50% lower than in the middle or the edge of the target. A deposition zone in the center of the target could not be detected. By increasing the nitrogen flow into the chamber a saturation in nitrogen content in the target was found at an Ar/N2 flow ratio of about 10%. Assuming nitrogen implantation with a depth of 2.5 nm under the influence of typical target voltage during magnetron sputtering, this saturation is at a concentration value where stoichiomtric TiN is formed. Within the precision of the measurements, a mobile fraction of nitrogen could not determined. The concentration in the target remains unchanged after switching off the magnetron.