With an increasing demand for alternative clean energy solutions, much effort is being invested in the progression of nanoscale semiconductor materials in hopes of better harnessing solar energy. ZnO and TiO2 remain the most prominent photocatalytically active materials. This thesis reports on a comparison between nanoscale core-shell and hierarchical Zn-Ti-O/ZnO heterostructures. After a seed layer thickness optimization, hydrothermally grown ZnO nanorods were coated with mixed concentrations of Ti and Zn within an oxygen rich sputtering environment at two distinct temperature zones. Core-shell structures resulted from low temperature (23°C) depositions while hierarchical branch structures grew at high temperature (800°C). Excluding deposition temperature and the strategic variation of Zn and Ti gun power, every fabrication process remained identical between the two resultant heterostructure groups. Amongst the variety of samples produced, one from each heterostructure group proved notably similar in structural dimension, composition, and crystallization, yet demonstrated distinct differences in photoluminescence and dye degradation via UV-visible light spectroscopy. While photoluminescence results indicated core-shell heterostructure more photocatalytically promising, hierarchical heterostructure prevailed as the more powerful photocatalyst. Increased surface area due to hierarchical branching in conjunction with enhanced light exposure was believed responsible for the improved photocatalytic effectiveness.

Neste trabalho, desenvolvemos um gerador de nanopartículas (NPs) como uma adaptação para um sistema de magnetron sputtering. Com ele, somos capazes de produzir NPs de materiais diversos e codepositá-las em matrizes dielétricas ou metálicas. A adaptação consiste em incluir uma região de alta pressão relativa de Ar no caminho do vapor atômico removido do alvo. A aglomeração ocorre termodinamicamente devido a diminuição da energia cinética após colisões com o gás. Desenvolvemos também, uma metodologia para colimar o fluxo de NPs dentro da região de alta pressão. A deposição é feita no substrato na forma de uma mancha com alguns milímetros de diâmetro e o tempo de preparação da amostra é significativamente curto. Desenvolvemos um modelo fenomenológico para explicar a condensação e a colimação do nosso sistema. Este, apesar de não sofisticado, explica bem ambos os fenômenos e consegue prever o diâmetro das nanopartículas para certas condições. Em paralelo ao desenvolvimento, produzimos e caracterizamos nanopartículas de cobalto. Da caracterização morfológica, através de microscopia eletrônica, concluímos que as NPs produzidas tem diâmetros médios de 10 nm com uma dispersão de 13 %. Através de análises de retro espalhamento Rutherford estudamos a distribuição do material sobre o substrato e observamos que este segue uma distribuição Gaussiana de espessuras. Além disso, devido a colimação, observamos que as taxas de deposição são da ordem de 50 vezes maiores que as taxas usuais de um sistema de sputtering. Estudos estruturais através de difração de raios X mostraram que as nanopartículas são nanocristalinas e imagens em alta magnificação de microscopia eletrônica de transmissão comprovaram esta hipótese. Finalmente, estudos magnéticos mostraram que as NPs não possuem eixos preferenciais de magnetização. Desenvolvemos condições padrões de operação e estabilizamos o sistema que atualmente produz amostras confiáveis e reprodutíveis. Além do Co, nanopartículas de Cu e SmCo foram produzidas em condições parecidas. A morfologia destas partículas foi investigadas por microscopia eletrônica e seus tamanhos se mostraram próximos dos das NPs de Co. Estes resultados ilustraram a universalidade do nosso sistema de deposição de nanopartículas. / We have developed a nanoparticle (NP) generator by adapting one of the sputtering guns on a magnetron sputtering system. With it, we are able to produce nanoparticles with different types of material. The adaptation consists of including a high-pressure region in the path of the atomic vapor removed from the sputtering target. The condensation happens thermodynamically through the loss of kinetic energy that the atomic vapor suffers after collisions with the gas. We have also developed a methodology to collimate the flow of nanoparticles inside the high pressure region. The deposition on the substrate is in the form of a stain with a few millimeters in diameter. The sample preparation time is also relatively short. We created a phenomenological model to explain both the condensation and collimation phenomena in our system. Despite being relatively simple, this model explain both quite well. In parallel to the development of the system, we produced and characterized cobalt nanoparticles. From a morphological analysis, carried out using electron microscopy, we determined that the nanoparticles mean diameter is of about 10 nm with a dispersion of 13 %. Through Rutherford back-scattering analysis, we studied the thickness distribution of the sample along the substrate. We observed that it follows a Gaussian distribution. Also, because of the collimation of the material, the deposition rates are about 50 times higher than in a regular sputtering system. Using X ray diffraction we were able to determine that the NPs are nano-crystalline which is corroborated with high resolution transmission electron microscopy images. Finally, magnetic measurements showed that the nanoparticles do not have any preferential magnetization axis. We developed standards of operations and stabilized the system. The samples we produce are trustworthy and reproducible. Besides Co, Cu and SmCo NPs were produced using this system with conditions similar to the ones used on the Co NPs. Through morphological analysis, we determined that their sizes are also similar. These results illustrate the universality of our system.

Kyoto University (京都大学) / 0048 / 新制・課程博士 / 博士(工学) / 甲第16847号 / 工博第3568号 / 新制||工||1539(附属図書館) / 29522 / 京都大学大学院工学研究科原子核工学専攻 / (主査)教授 伊藤 秋男, 准教授 柴田 裕実, 准教授 松尾 二郎 / 学位規則第4条第1項該当

The accurate knowledge of the implantation profiles is of considerable interest for testing theoretical models on the stopping of ions in matter, as well as for many important applications in metallurgy and semiconductor technology. Measurements of the depth distribution profiles of the implanted ions provide information on a wide range of fields, including ion-solid interactions, doping and diffusion. Several experimental methods have been employed to determine the depth distributions of the implanted ions. They can be divided into destructive and non-destructive methods. Most experimental results found in the literature are for heavier ions implanted into lighter target materials where the non¬destructive Rutherford Back-scattering method can be employed. Nuclear Reaction Analysis also provides a non-destructive method for determining the implanted profile of impurity atoms with mass number smaller or similar to that of the target material. One of the important effects in ion implantation is sputtering, the process in which the surface of the target material is eroded due to ion bombardment. This process modifies range moments of implantation profiles for high fluences. This study is mainly concerned about effects of sputtering on the implanted depth profile as a function of fluence and target mass. Sputtering correction factors are determined numerically to correct the theoretical depth distributions. / Dissertation (MSc (Physics))--University of Pretoria, 2006. / Physics / unrestricted

GaSb is a semiconductor material having a narrow band gap in the infrared spectrum of 0.72 eV. This research is intended to investigate the low cost growth and properties of GaSb and to propose this material as a candidate for a cost effective method of developing a GaSb /silicon tandem solar cell. This work investigated the sputtering of GaSb films onto a glass substrate from a GaSb/Sb split-sputtering target. A GaSb compound was formed by placing Ga and Sb elements inside a vacuum sealed ampule. The ampule was placed inside a box furnace and heated at 800 0 C successfully forming a GaSb compound. Both GaSb and Sb were molded into a semicircular shape in a quartz container. X-ray diffraction (XRD) was conducted on sputtered films in order to confirm their structure. XRD peaks of the film were compared with reference peaks found on the Inorganic Crystal Structure Database (ICSD). GaSb peaks were apparent at specific sputtering chamber conditions of substrate temperature and source-to-substrate distance. Sputtered GaSb films were then further characterized with the Scanning Electron Microscopy (SEM), Fourier Transform Infrared Spectroscopy (FTIR) and Hall Effect measurements. A theoretical thickness of the films was calculated using FTIR measurements to be about 1 μm and 0.35 μm for the films grown on a substrate heated with heater powers of 280 watts and 250 watts respectively. SEM confirmed the sample thicknesses with 20% error. Hall Effect measurements resulted in a high carrier concentration and low free carrier activation energy; 7.545 x1019 cm-3 and 0.1017 eV respectively. These values are attributed to the possible existence of anti-site defects. / Thesis / Master of Applied Science (MASc)

<p> This report presents a study of the sputtering of vacuum deposited thin films of cadmium sulphide on a (111) face of single crystal silicon by Rutherford backscattering (RBS) technique. Cadmium was found to be preferentially sputtered when bombarded to high fluences of 80 kV Bi+ while no significant preferential sputtering was observed in the case of 40 kV Ar+ bombardment. </p> <p> The structural study by reflection high energy electron diffraction (RHEED) revealed that the films grew epitaxially in the wurtzite structure. The epitaxial relations are (00.1) Cds || (111) Si with [10.0] II [110] Si. </p> <p> Scanning electron microscope (SID4) microphotographs showed smooth surface features with a large grain size (surface grain size was ~ 83 nm) for a film of about 60 nm thickness. </p> <p> The basic structure did not change with highest fluences of Bi+ (Sxlo16 ions/cm2 ) and Ar+ (6.7xlo16 ions/cm2). He+ beam channeling was done for unbombarded and bombarded CdS films. It was found that the critical angle of channeling for cadmium increased for bombarded samples while for sulfur the statistics were too poor for any conclusion. </p> <p> Saturation fluences for bismuth and argon retention were observed and are compared with calculated values. </p> / Thesis / Master of Engineering (MEngr)

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No description available.

O PVD (Physical Vapor Deposition- Deposição física na fase de vapor) é um meio utilizado para a produção de recobrimentos e empregado em grande escala industrial. É um processo de deposição atômica no qual o material é vaporizado de alvo sólido por sputtering e posteriormente condensado sobre a peça a ser revestida na forma de filme. O processo ocorre em uma câmara de vácuo, na presença de plasma, e por diferença de potencial os íons, na forma pura ou combinados com átomos de hidrogênio ou carbono, são movidos para a superfície do substrato. Uma técnica relativamente nova de sputtering é o HiPIMS (High Power Impulse Magnetron Sputtering) que utiliza impulsos de energia extremamente altas com densidade de potência possibilitando filmes com melhores performances e mais densos. No presente trabalho filmes de nitreto de cromo (CrN) foram depositados por duas técnicas de magnetron sputtering, HiPIMS e DCMS (Direct Current Magnetron Sputtering), variando frequência de pulso em 400 Hz, 450 Hz e 500 Hz para o HiPIMS e a tensão de polarização em 0 V, -20 V, -40V, -60V, - 100 V e -140 V para os dois processos. Foram obtidos filmes com maior dureza, menor rugosidade para HiPIMS, no entanto DCMS apresentou maior taxa de deposição. O aumento da frequência nos filmes HiPIMS, assim como o aumento da tensão de polarização negativa possibilitaram filmes com morfologia mais densa e homogênea. Este fato também foi observado com o aumento do valor de bias nos filmes depositados por DCMS. Os valores de dureza obtidos (17 ± 2 para DCMS e 26 ± 1 para HiPIMS) são superiores aos reportados na literatura e podem estar relacionados ao efeito de \"multicamadas\" obtido pela oscilação do substrato. / PVD (Physical Vapor Deposition) is a process used for coatings deposition and it is used on a large industrial scale. It is an atomic deposition process in which the material is vaporized from solid target by sputtering and then condensed onto the part to be coated in film form. The process occurs in a vacuum chamber in the presence of plasma, and by potential difference the ions in pure form or combined with hydrogen or carbon atoms are moved to the surface of the substrate. A relatively new sputtering technique is the HiPIMS (High Power Impulse Magnetron Sputtering) which uses extremely high energy pulses with power density to enable higher performance and denser films. In the present work, chromium nitride (CrN) films were deposited by two magnetron sputtering techniques, HiPIMS and DCMS (Direct Current Magnetron Sputtering), varying the pulse frequency at 400 Hz, 450 Hz and 500 Hz for the HiPIMS and the bias at 0 V, -20 V, -40 V, -60 V, -100 V and -140 V for both processes. It was obtained films with high hardness, less roughness for HiPIMS, however DCMS presented a higher rate of deposition. The increase of the frequency in the HiPIMS films, as well as the increase of the negative polarization voltage, allowed films with denser and homogeneous morphology. This fact was also observed with the increase of the value in the films deposited by DCMS. The hardness values obtained (17 ± 2 for DCMS and 26 ± 1 for HiPIMS) were higher than those reported in the literature and may be related to the \"multilayer\" effect obtained by substrate oscillation.

Neste trabalho, foram produzidos filmes finos de carbono pela técnica de magnetron sputtering usando substratos monocristalinos de alumina com plano-c orientado em (0001) e substratos de Si (111) e Si (100), empregando Co, Ni e Cu como filmes intermediários (buffer-layers). As deposições foram conduzidas em três etapas, sendo primeiramente realizadas com buffer-layers de cobalto em substratos de alumina, onde somente após a produção de grande número de amostras, foram então realizadas as deposições usando buffer-layer de cobre em substratos de Si. Em seguida foram realizadas as deposições com buffer-layers de níquel em substratos de alumina. A cristalinidade dos filmes de carbono foi avaliada por meio da técnica de espectroscopia Raman e complementarmente por difração de raios X (DRX). A caracterização morfológica dos filmes foi feita por meio da microscopia eletrônica de varredura (MEV E FEG-SEM) e microscopia eletrônica de transmissão de alta resolução (HRTEM). Picos de DRX referentes aos filmes de carbono foram observados apenas nos resultados das amostras com buffer-layers de cobalto e de níquel. A espectroscopia Raman mostrou que os filmes de carbono com maior grau de cristalinidade foram os produzidos com substratos de Si (111) e buffers de Cu, e com substratos de alumina com buffer-layers de Ni e Co, tendo este último uma amostra com o maior grau de cristalinidade de todas as produzidas no trabalho. Foi observado que o cobalto possui menor recobrimento sobre os substratos de alumina quando comparado ao níquel. Foram realizados testes de absorção de íons de Ce pelos filmes de carbono em duas amostras e foi observado que a absorção não ocorreu devido, provavelmente, ao baixo grau de cristalinidade dos filmes de carbono em ambas amostras. / In this work, carbon thin films were produced by the magnetron sputtering technique using single crystal substrates of alumina c-plane (0001) and Si (111) and Si (100) substrates, employing Co, Ni and Cu as intermediate films (buffer-layers). The depositions were conducted in three stages, first with cobalt buffer-layers where only after the production of a large number of samples, the depositions using cooper buffer-layers were carried out on Si substrates. Then, depositions were performed with nickel buffer-layers using single-crystal alumina substrates. The crystallinity of the carbon films was evaluated by using the technique of Raman spectroscopy and, complementarily, by X-ray diffraction (XRD). The morphological characterization of the films was performed by scanning electron microscopy (SEM and FEG-SEM) and high-resolution transmission electron microscopy (HRTEM). The XRD peaks related to the carbon films were observed only in the results of the samples with cobalt and nickel buffer-layers. The Raman spectroscopy showed that the carbon films with the best degree of crystallinity were the ones produced with Si (111) substrates, for the Cu buffers, and sapphire substrates for the Ni and Co buffers, where the latter resulted in a sample with the best crystallinity of all the ones produced in this work. It was observed that the cobalt has low recovering over the alumina substrates when compared to the nickel. Sorption tests of Ce ions by the carbon films were conducted in two samples and it was observed that the sorption did not occur probably because of the low crystallinity of the carbon films in both samples.