The world-class Buchans Mining Camp hosts a number of high-grade, low-tonnage volcanogenic massive sulfide (VMS) deposits. The Lundberg and Engine House zones form the lower-grade stockwork to the Lucky Strike deposit and have yet to be mined. A detailed study of the Lundberg and Engine House zones was conducted to establish the stratigraphic setting of the deposits, to determine the petrology of the host volcanic rocks and distribution of alteration facies, and to characterize the mineralization with the goal of improving exploration for polymetallic massive sulfide deposits in the Buchans camp.

The world-class Buchans Mining Camp hosts a number of high-grade, low-tonnage volcanogenic massive sulfide (VMS) deposits. The Lundberg and Engine House zones form the lower-grade stockwork to the Lucky Strike deposit and have yet to be mined. A detailed study of the Lundberg and Engine House zones was conducted to establish the stratigraphic setting of the deposits, to determine the petrology of the host volcanic rocks and distribution of alteration facies, and to characterize the mineralization with the goal of improving exploration for polymetallic massive sulfide deposits in the Buchans camp.

The world-class Buchans Mining Camp hosts a number of high-grade, low-tonnage volcanogenic massive sulfide (VMS) deposits. The Lundberg and Engine House zones form the lower-grade stockwork to the Lucky Strike deposit and have yet to be mined. A detailed study of the Lundberg and Engine House zones was conducted to establish the stratigraphic setting of the deposits, to determine the petrology of the host volcanic rocks and distribution of alteration facies, and to characterize the mineralization with the goal of improving exploration for polymetallic massive sulfide deposits in the Buchans camp.

The world-class Buchans Mining Camp hosts a number of high-grade, low-tonnage volcanogenic massive sulfide (VMS) deposits. The Lundberg and Engine House zones form the lower-grade stockwork to the Lucky Strike deposit and have yet to be mined. A detailed study of the Lundberg and Engine House zones was conducted to establish the stratigraphic setting of the deposits, to determine the petrology of the host volcanic rocks and distribution of alteration facies, and to characterize the mineralization with the goal of improving exploration for polymetallic massive sulfide deposits in the Buchans camp.

[pt] Fotodetectores de infravermelho possuem uma vasta gama de aplicações diretas em diversos setores, desde militar (e.g. visão noturna, orientação de mísseis) até lazer (aparelhos eletrônicos). Especificamente, os fotodetectores baseados em semicondutores III-V são dispositivos que podem ser construídos para selecionar e medir radiação em faixas específicas do espectro eletromagnético. Dentre as figuras de mérito dos fotodetectores um dos grandes desafios está na redução da corrente de escuro. Neste trabalho visamos produzir um dispositivo de InGaAs com geometria planar, que de acordo com a literatura tem como característica apresentar uma baixa corrente de escuro, nesse caso, há necessidade de difusão de um dopante. Estão reportadas neste trabalho todas as etapas, desde o crescimento das amostras até a caracterização do dispositivo final. Com o auxílio de um reator de MOVPE, foram feitas as calibrações das camadas que fazem parte do dispositivo final, bem como as calibrações do processo de difusão do dopante (Zn). Todas as camadas da amostra foram otimizadas individualmente, assim como a profundidade de difusão desejada (1 µm e nível de dopagem de 2x1018 cm−3). Diversas técnicas de processamento e caracterização foram utilizadas ao longo do trabalho para obter o melhor dispositivo possível. Podemos destacar os resultados de fotocorrente e de corrente de escuro, no qual as medidas foram realizadas com variação da temperatura de 77 até 300 K. Foi possível observar no resultado de espectro de fotocorrente um pico em 0,75 eV referente ao InGaAs a 300 K. Este resultado está de acordo com os de diodos de InGaAs feitos usando o método convencional de dopagem do Zn. / [en] Infrared photodetectors have a wide range of direct applications in various sectors, from military (e.g. night vision, missile guidance) to leisure (electronic devices). Specifically, III-V semiconductor-based photodetectors are devices that can be built to select and measure specific ranges of the electromagnetic spectrum. Among the photodetector figures of merit, one of the great challenges is reducing the dark current. In this work we aim to produce an InGaAs device with planar geometry, which according to the literature has the characteristic of presenting a low dark current. This geometry requires a dopant diffusion. This work reports all the steps, from sample growth to final device characterization. With the aid of an MOVPE reactor, the calibrations of the layers that are part of the final device were made, as well as the calibrations of the dopant diffusion process (Zn). All sample layers were individually optimized, as well as, the desired diffusion depth (1 µm and doping level of 2x1018 cm−3). Several processing and characterization techniques were used throughout the work to obtain the best possible device. We can highlight the photocurrent and dark current results, in which the measurements were performed with a temperature variation from 77 up to 300 K. It was possible to observe from the photocurrent spectrum result a peak at 0,75 eV relative to the InGaAs at 300 K. This result is in agreement with those of InGaAs diodes made using the conventional Zn doping method.

[pt] Sensores de infravermelho possuem uma vasta gama de aplicações civis e militares. Exatamente pelo forte interesse militar, esses dispositivos são considerados tecnologia sensível e têm sua comercialização controlada pelos governos dos países produtores. Os fotodiodos de InGaAs construídos sobre substratos de InP são indicados para cobrir a faixa espectral conhecida como infravermelho de onda curta (SWIR, do inglês, short-wave infrared), que vai de 0,9 até 1,7 micrómetros. Tal faixa espectral é útil no combate a incêndios florestais, na localização de pistas de pouso e decolagem clandestinas e na visualização em missões noturnas. Nesta tese foram investigadas duas inovações para otimizar o desempenho de diodos pin de InGaAs/InP na faixa do SWIR. A primeira otimização proposta foi a introdução do quaternário InGaAsP entre a camada ativa de InGaAs e o InP n+, visando reduzir o armadilhamento nessa interface. Com a introdução do quaternário, obtivemos um aumento integral de 12 por cento na intensidade da fotocorrente para a faixa do comprimento de onda de 1000 a 1700 nm. A segunda otimização proposta foi a deposição de um revestimento antirreflexo formado por duas bicamadas de TiO(2) e SiO(2). Esta otimização visa aumentar a fração dos fótons transmitidos que podem contribuir para a geração da fotocorrente. Com o revestimento antirreflexo, obtivemos um aumento aproximado de 25 por cento na intensidade da fotocorrente para todos os dispositivos. Usando como referência o dispositivo com as duas modificações propostas, o aumento na responsividade foi aproximadamente 6 vezes superior à do dispositivo sem quaternário, de 2,62 mA/W contra 0,45 mA/W, respectivamente. Já a detectividade normalizada, teve um aumento aproximado de 24 vezes maior do que o dispositivo convencional, de 1,14 x 10(10) cmHz(1/2)W(−1) contra 4,83 x 10(8) cmHz(1/2)W(-1), respectivamente. Os resultados apresentados indicam que ambas as propostas de fato melhoraram o desempenho dos dispositivos convencionais na faixa do SWIR. / [en] Infrared sensors have a wide range of civil and military applications.Precisely because of the strong military interest, these devices are considered sensitive technology, and the governments of the producing countries control their commercialization. InGaAs photodiodes built on InP substrates are indicated to cover the spectral range known as short-wave infrared (SWIR),which goes from 0.9 to 1.7 micrometers. This spectral range is useful in fighting forest fires This spectral range is very useful in fighting forest fires, locating clandestine landing and take off runways, and visualization in night missions. In this thesis, two innovations were investigated to improve the performance of diodes of the InGaAs/InP pin diodes in the SWIR range. The first approachproposed was the introduction of the InGaAsP quaternary between the InGaAsactive layer and the InP n+, aiming to reduce trapping at this interface. With the introduction of the quaternary, we obtained an integral increase of 12 percent inthe photocurrent intensity for the wavelength range from 1000 to 1700 nm. The second approach suggested optimization was the deposition of an anti-reflective coating formed by two bilayers of TiO(2) and SiO(2). This optimization aimsto increase the fraction of transmitted photons that can contribute to the generation of the photocurrent. With the anti-reflective coating, we obtained an approximate 25 percent increase in the photocurrent intensity for all devices. Using the device with the two proposed modifications as a reference, the responsivity increase was approximately 6 times higher than that of the device without quaternary, 2.62 mA/W versus 0.45 mA/W, respectively. The normalized detectivity had an increase of roughly 24 times greater than the conventional device, of 1.14 x 10(10) cmHz(1/2)W(-1) against 4.83 x 10(8)cmHz(1/2)W(-1), respectively. The results presented in this thesis indicate that both proposals improved theperformance of conventional devices in the SWIR band.

The subject of this study is the design of a camera, which has maximum volume of 50 mm x 50 mm x 300 mm, using short infrared wavelength providing Rayleigh criteria. Firstly, the required flux per pixel has been calculated. Throughout these calculations, atmospheric losses have been obtained by MODTRAN program. Also signal to noise ratio has been examined at minimum and maximum integration time intervals. The focal length of the camera has been calculated as it receives 1 m resolution from 8 km distance. Moreover, the lens materials have been used as N-F2, LIF and BaF2 in this six lens system. The design has been done using ZEMAX optical design program and the performance of the system at focal plane was investigated by the help of Seidel aberrations, Modulation transfer Function (MTF), Spot diagram and Optical Path Difference (OPD) fan plot analyses.

Background matching, a form of camouflage, involves species developing patterns and coloration that closely resemble their environment. Humans have utilized camouflage and background matching, particularly in military applications, to reduce detectable characteristics, known as signatures. Recent advancements in sensor systems necessitate the development of effective camouflage in the short-wave infrared (SWIR) range (0.9 – 2.5 µm). However, absorption of SWIR radiation is heavily influenced by water, and dry textile materials may be easily detectable against a forest background due to their low water content. To address this challenge, this master's thesis explores the integration of hydration onto a textile fabric to reduce the signature in SWIR. Various fabric types were included in this study. The optical properties of these textiles, both when wet and dry, were evaluated using SWIR imaging and UV-VIS-NIR spectroscopy, and compared to foliage. Surface modifications were employed to introduce hydrophobic properties to the fabric, such as the application of water-repelling agents (Nikwax and OrganoTex) or functionalized silica nanoparticles. The water evaporation rates of untreated and surface-treated fabrics were assessed. However, the hydrophobic surface did not significantly reduce water evaporation from the fabrics. Similarly, the addition of a nanocellulose-based hydrogel on the fabric surface did not result in a significant change in evaporation. Combining the hydrogel with water-repelling solutions in a multilayer configuration indicated prolonged evaporation, but further tests are required to validate this finding. This master's thesis demonstrates that introducing water into a dry textile fabric alters its spectral properties, making it more similar to foliage. However, the primary challenge lies in retaining water within the material for improved camouflage in SWIR wavelengths.

As individual health monitors continue to become more widely adopted in helping individuals make informed decisions, new technologies need to be developed to obtain more biometric data. Spectroscopy is a well-known tool to gain biological information. Traditionally spectrometers are large and expensive making personal or wearable health monitors difficult. Here we present the development and characterization of a miniaturized short wavelength infrared spectrometer for wearable applications. We present a carbon nanotube parallel hole collimator can effectively select a narrow set of allowed angles of light to be separated by a linear variable filter and detected at a photodiode array making a spectrometer. We will go over the calibration of the spectrometer showing a resolution of 13 nm at 1300 nm. Improvements on the original collimator data will be discussed, including carbon nanotube growth without infiltration and growth on transparent substrates. We will also show measurements made on human subjects yielding a pulse.

Efficient absorption of light is required for a large number of applications such as thermo-photovoltaics,thermal imaging, bio-sensing, thermal emitters, astronomy, and stealth technology. Strong light absorbers found in nature with high intrinsic losses such as carbon black, metal-black, and carbon nano-tubes etc. are bulky, not design-tunable and are hard to pattern for micro- and nano- devices. We developed thin-film, high performance absorbers in the visible, near-, mid-, long-wave - and far-IR region based on a 3 layer metal-dielectric-metal (MDM) structure. We fabricated a 3-layerMDMabsorber with large band-widths in the visible and near IR spectral range without any lithographic patterning. This was the first demonstration in the optical range of the Salisbury Screen, which was originally invented for radar absorption. A Fabry-Perot cavity model depending on the thickness of the dielectric, but also the effective permittivity of the semi-transparent top metal gives calculated spectra that agree well with experiment. Secondly, we fabricated long-wave IR and far-IR MDM absorbers comprising surface patterns of periodic metal squares on the dielectric layer. Strong absorption in multiple bands were obtained, and these depended weakly on polarization and angle of incidence. Though such absorbers had been extensively studied by electrodynamic simulations and experiment in the visible to far- R regions, there existed no analytic model that could accurately predict the wavelengths of the multiple resonances. We developed a theoretical model for these absorbers based on standingwave resonances, which accurately predicts resonance wavelengths for experiment and simulation for the first time. Unlike metamaterial theories our model does not depend on the periodicity of the squares but only on their lateral dimension and the thickness of the dielectric. This feature is confirmed by synchrotron-based IR spectral imaging microscopy of single isolated squares.