Microwave and millimeter wave switch matrices are essential components in telecommunication systems. These matrices enhance satellite capacity by providing full and flexible interconnectivity between the received and transmitted signals and facilitate optimum utilization of system bandwidth. Waveguide and semiconductor technology are two prominent candidates for the realizing such types of switch matrices. Waveguide switches are dominant in high frequency applications of 100 ? 200 GHz and in high power satellite communication. However, their heavy and bulky profile reinforces the need for a replacement. In some applications, semiconductor switches are an alternative to mechanical waveguide switches and utilize PIN diodes to create the ON and OFF states. Although, these switches are small in size, they exhibit poor RF performance and low power handling. <br /><br /> RF MEMS technology is a good candidate to replace the conventional switches and to realize an entire switch matrix. This technology has a great potential to offer superior RF performance with miniaturized dimensions. Because of the advantages of MEMS technology numerous research studies have been devoted to develop RF MEMS switches. However, they are mostly concentrated on Single-Pole Single-Throw (SPST) configurations and very limited work has been performed on MEMS multi-port switches and switch matrices. Here, this research has been dedicated on developing multi-port RF MEMS switches and amenable interconnect networks for switch matrix applications. To explore the topic, three tasks are considered: planar (2D) multi-port RF MEMS switches, 3D multi-port RF MEMS switches, and RF MEMS switch matrix integration. <br /><br /> One key objective of this thesis is to investigate novel configurations for planar multi-port (SPNT), C-type, and R-type switches. Such switches represent the basic building blocks of switch matrices operating at microwave frequencies. An in house monolithic fabrication process dedicated to electrostatic multi-port RF MEMS switches is developed and fine tuned. The measurement results exhibit an excellent RF performance verifying the concept. Also, thermally actuated multi-port switches for satellite applications are designed and analyzed. The switch performance at room condition as well as at a very low temperature of 77K degrees (to resemble the harsh environment of satellite applications) is measured and discussed in detail. <br /><br /> For the first time, a new category of 3D RF MEMS switches is introduced to the MEMS community. These switches are not only extremely useful for high power applications but also have a great potential for high frequencies and millimetre-waves. The concept is based on the integration of vertically actuated MEMS actuators inside 3D transmission lines such as waveguides and coaxial lines. An SPST and C-type switches based on the integration of rotary thermal and electrostatic actuators are designed and realized. The concept is verified for the frequencies up to 30GHz with measured results. A high power test analysis and measurement data indicates no major change in performance as high as 13W. <br /><br /> The monolithic integration of the RF MEMS switch matrix involves the design and optimization of a unique interconnect network which is amenable to the MEMS fabrication process. While the switches and interconnect lines are fabricated on the front side, taking advantage of the back side patterning provides a high isolation for cross over junctions. Two different techniques are adopted to optimize the interconnect network. They are based on vertical three-via interconnects and electromagnetically coupled junctions. The data illustrates that for a return loss of less than -20dB up to 30GHz, an isolation of better than 40dB is obtained. This technique not only eliminates the need for expensive multilayer manufacturing process such as Low Temperature Co-fired Ceramics (LTCC) but also provides a unique approach to fabricate the entire switch matrix monolithically.

Capacitive radio frequency (RF) micro-electromechanical (MEMS) switches are among the most promising applications in MEMS systems. They have been introduced in the last 15-20 years as a practical alternative over traditional semiconductor switches. Low-cost RF MEMS switches are prime candidates for replacing the conventional GaAs Field Effect Transistors (FET) and pin diode switches in RF and microwave communication systems, mainly due to their low insertion loss, good isolation, linear characteristic and low power consumption. Unfortunately, their commercialization is currently hindered by reliability problems. The most important problem is charging of the dielectric, causing unpredictable device behavior. The charging of the dielectric has been found to be a complicated process and is currently under intense research. Developing a good analytical model that would describe accumulating of charges in the dielectric and their influence on the device behavior would be the main step to achieving more reliable switches. This work intends to theoretically and experimentally investigate the dielectric charging effects of capacitive RF MEMS switches with silicon nitride and silicon dioxide as the dielectric layer. For the silicon nitride study, both MEMS switches and MIM capacitors were fabricated, and their charging behaviors were analyzed and compared. Several different dielectric stoichiometries, deposition temperatures, and thicknesses were examined in order to understand the effects of each parameter on the charging mechanisms of the dielectric. The goal was to determine the most favorable deposition conditions to induce minimum dielectric charging in silicon nitride capacitive switches. The switches were measured over a wide temperature range and the temperaturedependent behavior of the dielectric was examined to characterize and study its charging behaviors. For the silicon dioxide MEMS switches, several different actuation mechanisms were systematically analyzed, and their effects on the dielectric charging of the switches were studied. A general model of distributed charge and air gap was adopted and further developed to better explain the charging behavior of MEMS switches. The goal was to provide a deeper insight into the trapping processes in dielectric materials and their corresponding time constants. This will in turn aid in better modeling of charging processes in capacitive RF MEMS switches.

Thesis (M.S.)--Worcester Polytechnic Institute. / Keywords: packaging; micro electro mechanical systems; MEMS; electronics; die warpage; die bow; encapsulant; encapsulate; electrochemical migration; corrosion; wirebonds. Includes bibliographical references (p. 94-99).

Thesis--Ph. D., University of Hong Kong, 1981.

Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003. / Includes bibliographical references (leaves 82-84). Also available in electronic version. Access restricted to campus users.

published_or_final_version / Electrical and Electronic Engineering / Master / Master of Philosophy

ITC/USA 2013 Conference Proceedings / The Forty-Ninth Annual International Telemetering Conference and Technical Exhibition / October 21-24, 2013 / Bally's Hotel & Convention Center, Las Vegas, NV / Network switches are a critical component in any networked FTI data acquisition system in order to allow the forwarding of data from the DAU to the target destination devices such as the network recorder, PCM gateways, or ground station. Larger configurations require one or more switch boxes to handle aggregation, routing, filtering and synchronization via the IEEE 1588 Precision Time Protocol. However, for smaller configurations where space and weight restrictions are more stringent, a separate switch box may not be practical This paper discusses how all the essential features of an FTI network, such as flexible forwarding and filtering and IEEE 1588 synchronization, can be maintained without the need for the separate switch box thus making significant savings on weight and size and reducing cost.

abstract / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy

Thesis (M.Eng.Sc.)--University of Adelaide, Dept. of Electrical and Electronic Engineering, 1999. / Bibliography: leaves 133-134.

Thesis (Ph. D.) University of Missouri-Columbia, 2006. / The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on August 3, 2007) Includes bibliographical references.