abstract: The objective of this thesis is to achieve a detailed understanding of the loss mechanisms in SHJ solar cells. The working principles of these cells and what affects the cell operation, e.g. the IV characteristics at the maximum power point (MPP) and the correspondingly ll factor (FF) are investigated. Dierent loss sources are analyzed separately, and the weight of each in the total loss at the MPP are evaluated. The total series resistance is measured and then compared with the value obtained through summation over each of its components. In other words, series resistance losses due to recombination, vertical and lateral carrier transport, metalization, etc, are individually evaluated, and then by adding all these components together, the total loss is calculated. The concept of ll factor and its direct dependence on the loss mechanisms at the MPP of the device is explained, and its sensitivity to nearly every processing step of the cell fabrication is investigated. This analysis provides a focus lens to identify the main source of losses in SHJ solar cells and pave the path for further improvements in cell efficiency. In this thesis, we provide a detailed understanding of the FF concept; we explain how it can be directly measured; how it can be calculated and what expressions can better approximate its value and under what operating conditions. The relation between FF and cell operating condition at the MPP is investigated. We separately analyzed the main FF sources of losses including recombination, sheet resistance, contact resistance and metalization. We study FF loss due to recombination and its separate components which include the Augur, radiative and SRH recombination is investigated. We study FF loss due to contact resistance and its separate components which include the contact resistance of dierent interfaces, e.g. between the intrinsic and doped a-Si layers, TCO and a-Si layers. We also study FF loss due to lateral transport and its components that including the TCO sheet resistance, the nger and the busbars resistances. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2018

Renewable and clean energy is urgently needed to cope with the climate crisis. Photovoltaics (PV) has been the fastest growing technology in the clean energy market due to its low cost, and the abundance of solar energy. The capacity of silicon-based PV is rapidly expanding with evolving technologies. Passivating the solar cell’s electrical contacts is a widely accepted strategy for the PV industry to improve device power conversion efficiency (PCE). Polycrystalline silicon (Poly-Si) passivating contacts are one of the promising concepts in the emerging class of passivating contacts. In this dissertation, the passivation mechanism of Poly-Si passivating contacts is investigated. Moreover, the influence of dopant diffusion on the passivation quality is revealed. To address the side-effects of dopant diffusion, a thin buffer layer is inserted between the Poly-Si(p) layer and the $SiO_x$ layer. With such a buffer layer, the passivation of the Poly-Si passivating contact is improved, which in turn, enhances the device PCE. In addition to passivating contacts, this dissertation also explores carrier-selective contact of crystalline silicon (c-Si) and low work function metal – Li. Li is a very reactive metal which makes the fabrication process a challenge. To overcome such a challenge, the c-Si/ Li contact is fabricated by thermally decomposing stable $Li_3N$ powder instead of metal evaporation. The c-Si/Li contact shows an excellent electron-selective transport performance with a 0.39 eV energy barrier. Full-area Si/Li rear contact devices are fabricated, and >19% PCE and >80% fill factor are achieved. To accelerate the device optimization, a physical model embedded machine-learning approach is applied to transparent conductive oxide (TCO) materials optimization. In this work, empirical correlations between sputtering parameters and the deposited TCOs’ electrical properties are established. Then a Bayesian Parameter Estimation (BPE) algorithm is applied to learn the empirical model. With this BPE network, the TCOs’ electrical properties are successfully predicted with limited material characterizations. Thanks to the combination of BPE and a physical model network, the material optimization process is significantly accelerated. In summary, this dissertation explores different aspects to develop novel passivating and carrier-selective contacts for c-Si solar cells, and introduces an approach to accelerate the development processes.

abstract: It has been a long-standing goal to epitaxially integrate III-V alloys with Si substrates which can enable low-cost microelectronic and optoelectronic systems. Among the III-V alloys, gallium phosphide (GaP) is a strong candidate, especially for solar cells applications. Gallium phosphide with small lattice mismatch (~0.4%) to Si enables coherent/pseudomorphic epitaxial growth with little crystalline defect creation. The band offset between Si and GaP suggests that GaP can function as an electron-selective contact, and it has been theoretically shown that GaP/Si integrated solar cells have the potential to overcome the limitations of common a-Si based heterojunction (SHJ) solar cells. Despite the promising potential of GaP/Si heterojunction solar cells, there are two main obstacles to realize high performance photovoltaic devices from this structure. First, the growth of the polar material (GaP) on the non-polar material (Si) is a challenge in how to suppress the formation of structural defects, such as anti-phase domains (APD). Further, it is widely observed that the minority-carrier lifetime of the Si substrates is significantly decreased during epitaxially growth of GaP on Si. In this dissertation, two different GaP growth methods were compared and analyzed, including migration-enhanced epitaxy (MEE) and traditional molecular beam epitaxy (MBE). High quality GaP can be realized on precisely oriented (001) Si substrates by MBE growth, and the investigation of structural defect creation in the GaP/Si epitaxial structures was conducted using high resolution X-ray diffraction (HRXRD) and high resolution transmission electron microscopy (HRTEM). The mechanisms responsible for lifetime degradation were further investigated, and it was found that external fast diffusors are the origin for the degradation. Two practical approaches including the use of both a SiNx diffusion barrier layer and P-diffused layers, to suppress the Si minority-carrier lifetime degradation during GaP epitaxial growth on Si by MBE were proposed. To achieve high performance of GaP/Si solar cells, different GaP/Si structures were designed, fabricated and compared, including GaP as a hetero-emitter, GaP as a heterojunction on the rear side, inserting passivation membrane layers at the GaP/Si interface, and GaP/wet-oxide functioning as a passivation contact. A designed of a-Si free carrier-selective contact MoOx/Si/GaP solar cells demonstrated 14.1% power conversion efficiency. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2017