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This thesis is concerned with theoretical calculations of the properties of electronic bound states in semiconductor heterostructures. The complex band structure empirical pseudopotential method (EPM) is used as the foundation of the work. Spin orbit coupling and strain effects (due to lattice mismatch) are included in familiar ways, as is the transfer matrix method, allowing the study of arbitrarily configured heterostructures. These techniques are used to investigate the unusually deep InAs/AlSb conduction band well. The strong possibility of intraband transitions at electro magnetic wavelengths around 1.55µm is predicted, with corresponding enhanced momentum matrix elements and joint density of states over interband transitions. An InAs/GaSb/AlSb asymmetric well is investigated, paying particular attention to the bound states in the vicinity of the InAs/GaSb band overlap. The electron-like states are found to cross with heavy hole and anti-cross with light hole-like states, as a function of heterostructure dimension or applied electrostatic field. This is analogous to the hybridisation of states in the in-plane band structure, except that for zero in-plane wave vector there can be no appreciable hybridisation of electron and heavy hole states. A technique is described that has been developed to extract envelope functions from heterostructure wavefunctions calculated using the realistic complex band structure EPM approach. These envelope functions conform to Burt’s theory (M. G. Burt, J. Phys.: Condens. Matt. 4, 6651 (1992)) in that they are uniquely defined, continuous and smooth over all space. Comparisons with traditional effective mass envelope functions are made. The extracted envelope functions are used to demonstrate conclusively Burt's predictions (M. G. Burt, Superlatt. Mi- crostruct. 17, 335 (1995)) concerning the inadequacy of certain approximations for the calculation of interband dipole matrix elements and charge oscillation. Finally, the issue of k • p operator ordering is convincingly settled, in favour of 'ordered' over 'symmetrised' Hamiltonians, by comparison to EPM calculations, and using EPM derived k • p parameters.

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Vertical-cavity surface-emitting lasers (VCSELs) are complex multi-layer structures whose operating characteristics are highly sensitive to variations in layer thickness and composition. They contain an active region of one or more quantum wells sandwiched between highly reflecting mirrors. Non-destructive optical characterisation techniques including reflectance spectroscopy, spectroscopic ellipsometry and photomodulated reflectance have been used to examine these structures and various components of them. In addition, the relatively novel technique of photomodulated spectroscopic ellipsometry has been examined in comparison with photomodulated reflectance in the characterisation of bulk, multi-layer and quantum well material. The distributed Bragg reflectors of VCSELs provide the high reflectance required over a selected wavelength range. Optical measurements were used to determine important information concerning layer thicknesses and compositions, which were confirmed with X-ray diffraction and transmission electron microscopy. The techniques were also used to provide important information concerning growth and uniformity, which could be readily applied for feedback to growers or for device fabrication. Novel reflectance and photomodulated reflectance measurements made on a range of laser structures designed to operate over a range of wavelengths from 650 nm to 1 ?m were used to examine the characteristics of the reflectors and the active region of the lasers. The cavity mode observed clearly indicates the lasing wavelength, and the interaction of the cavity and quantum well has been interpreted using new lineshapes. The cavity mode and quantum well resonance observed in photomodulated reflectance has been shown to provide a clear indication of where devices can be fabricated successfully from non-uniform material. The identification of the cavity and quantum well features has also enabled important information concerning the changes in structure and therefore in device performance with temperature and pressure. Measurements have also been able to provide important information to explain the variation in performance of some devices.

This work presents the bottom-up fabrication of DNA origami-assembled metal nanowires and metal-semiconductor junctions, and their electrical characterization. Integration of metal and semiconductor nanomaterials into prescribed sites on self-assembled DNA origami has facilitated the fabrication of electronic nanomaterials, whereas use of conventional tools in their characterization combines bottom-up and top-down technologies. To expand the contemporary DNA-based nanofabrication into nanoelectronics, I performed site-specific metallization of DNA origami to create arbitrarily arranged gold nanostructures. I reported improved yields and conductivity measurements for Au nanowires created on DNA origami tile substrates. I measured the conductivity of C-shaped Au nanowires created on DNA tiles (∼130 nm long, 10 nm diameter, and 40 nm spacing between measurement points) with a four-point measurement technique which revealed the resistivity of the gold nanowires was as low as 4.24 × 10-5 Ω m. Next, I fabricated DNA origami-templated metal-semiconductor junctions and performed electrical characterization. Au and Te nanorods were attached to DNA origami in an alternating fashion. Electroless gold plating was used to create nanoscale metal--semiconductor interfaces by filling the gaps between Au and Te nanorods. Two-point electrical characterization indicated that the Au--Te--Au junctions were electrically connected, with non-linear current--voltage curves. Finally, I formed metal-semiconductor nanowires on DNA origami by annealing polymer-encased nanorods. Polymer-coated Au and Te nanorods pre-attached to ribbon-shaped DNA origami were annealed at 170°C for 2 min. Gold migration occurred onto Te nanorods during annealing and established electrically continuous interfaces to give Au/Te nanowires. Electrical characterization of these Au/Te/Au assemblies revealed both nonlinear current-voltage curves and linear plots that are explained. The creation of electronic nanomaterials such as metal nanowires and metal-semiconductor junctions on DNA origami with multiple techniques advances DNA nanofabrication as a promising path toward future bottom-up fabrication of nanoelectronics.

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Cette thèse présente une étude des propriétés de transport à basses températures de matériaux hybrides composés de nano-clusters de métaux supraconducteurs (Sn et Pb) auto-assemblés à la surface d'une feuille de graphène. L'auto-assemblage du métal réalise un réseau bi-dimensionnel désordonné de jonctions Josephson. La caractérisation des propriétés supraconductrices révèle une transition de type 'BKT' avec une température de transition dépendant de la morphologie de la surface. Les propriétés supraconductrices de ce système sont fortement influencées par la grille arrière, qui contrôle la résistance dans l'état normal du graphène. Le résultat le plus marquant de cette thèse a été obtenu en utilisant du graphène désordonné. La présence de défauts structuraux dans la maille de graphène induit un régime de localisation forte à basses températures. En faisant varier le voltage de grille, la résistance de tels échantillons peut varier de 3 ordres de grandeurs. Cette grande dynamique a été mise à contribution pour la réalisation d'une transition de phase supraconducteur-isolant dans des échantillons décorés à l'étain. L'étude de cette transition de phase quantique révèle un comportement de type percolatif et une résistivité universelle prédite par la théorie à la transition. Enfin, un travail préliminaire visant à réaliser des résonateurs mécaniques supraconducteurs à l'aide des ces matériaux hybrides est également présenté. / This thesis presents a study of the low temperature transport properties of hybrid materials made of superconducting metals (Sn and Pb) nano-clusters self-assembled onto the surface of a graphene sheet. The self-assembly realizes a two-dimensional disordered array of Josephson junctions. Characterization of the superconducting properties reveals a transition of the 'BKT' kind, with a transition temperature that depends on surface morphology. The superconducting properties are strongly affected by the gate voltage, which controls the normal state resistance of the graphene sheet. The main result of this thesis was obtained using disordered graphene. The presence of structural defects in the graphene lattice induces a regime of strong localization at low temperatures. Upon varying the gate voltage, the resistance of such samples can change by 3 orders of magnitude. Taking advantage of the large dynamics offered by the gate voltage, we have induced a superconductor-insulator transition in Sn-decorated samples. The study of that quantum phase transition reveals a percolating behavior near the threshold and the universal value of resistivity predicted by theory at the transition. Finally, a preliminary work aiming at using such an hybrid material to realize superconducting nano-electro-mechanical resonators is presented.