Thesis supervisor: Craig E. Pryor. Includes bibliographic references (p. 106-118).

Thesis (Ph. D.)--University of Washington, 2006. / Vita. Includes bibliographical references (leaves 163-175).

Thesis (Ph. D.)--University of Washington, 2004. / Vita. Includes bibliographical references (leaves 155-170).

Universidade Federal de Uberlândia / In this work we investigate theoretically the dissipative dynamics of exciton states in a system constituted by coupled quantum dots, which in turn exhibit a great flexibility and experimental ability to change their energy spectrum and structural geometry through of external electric fields. In this way, the optical coherent control of charge carriers enables the investigation of several quantum interference process, such as tunneling induced transparency. We investigate the optical response of the quantum dot molecule considering different optical regimes and electric field values, where the tunneling between the dots can establish efficiently quantum destructive interference paths causing significant changes on the optical spectrum. Using realistic experimental parameters we show that the excitons states coupled by tunneling exhibit a controllable and enriched optical response. In this system, we also investigate the entanglement degree between the electron and hole, and we demonstrate through of the control of parameters such as, the applied gate voltage, the incident laser frequency and intensity, the system goes to an asymptotic state with a high entanglement degree, which is robust to decoherence process. / Neste trabalho investigamos teoricamente a dinâmica dissipativa de estados de éxcitons em um sistema formado por pontos quânticos duplos, que por sua vez apresentam uma grande flexibilidade e capacidade experimental em alterar seu espectro de energia juntamente com sua forma estrutural por meio de campos elétricos externos. Deste modo, o controle óptico coerente de portadores de carga nessas nanoestruturas permite a investigação de diversos processos de interferência quântica, tais como transparência induzida por tunelamento. Investigamos a resposta óptica da molécula quântica considerando diferentes regimes ópticos e valores de campo elétrico, nos quais o tunelamento entre os pontos pode estabelecer eficientemente caminhos de interferência quântica destrutiva provocando mudanças significativas no espectro óptico. Usando parâmetros experimentais realísticos mostramos que os estados excitônicos acoplados por tunelamento exibem uma resposta óptica controlável e bastante enriquecida. Neste mesmo sistema, investigamos o emaranhamento entre elétron e buraco, e demonstramos que através do controle de parâmetros tais como, a barreira de potencial aplicada, a frequência e intensidade do laser incidente, o sistema evolui para um estado assintótico com um alto grau de emaranhamento, que se apresenta robusto a processos de decoerência. / Doutor em Física

The deterministic generation and manipulation of quantum states has attracted much interest ever since the rise of quantum mechanics. Large-scale, distributed quantum states are the basis for novel applications such as quantum communication, quantum remote sensing, distributed quantum computing or quantum voting protocols. The necessary infrastructure will be provided by distributed quantum networks, allowing for quantum bit processing and storage at single nodes. Quantum states of light then allow for inter-node transmission of quantum information. Transmission losses in optical fibers may be overcome by quantum repeaters, the quantum equivalent of classical signal amplifiers. The fragility of quantum superposition states makes building such networks very challenging. Hybrid solutions combine the strengths of different physical systems: Efficient quantum memories can be realized using alkali atoms such as rubidium. Leading in the deterministic generation of single photons and polarization entangled photon pairs are semiconductor InAs/GaAs quantum dots grown by the Stranski-Krastanov method. Despite remarkable progress in the last twenty years, complex quantum optical protocols could not be realized due to low degree of entanglement, low brightness and broad wavelength distribution. In this work, an emerging family of epitaxially grown GaAs/AlGaAs quantum dots obtained by droplet etching and nanohole infilling is studied. Under pulsed resonant two-photon excitation, they emit single pairs of entangled photons with high purity and unprecedented degree of entanglement. Entanglement fidelities up to f = 0.94 are observed, which are only limited by the optical setup or a residual exciton fine structure. The samples exhibit a very narrow wavelength distribution at rubidium memory transitions. Strain tuning is applied via piezoelectric actuators to allow for reversible fine-tuning of the emission frequency. In a next step, active feedback is employed to stabilize the frequency of single photons emitted by two separate quantum dots to an atomic rubidium standard. The transmission of a rubidium-based Faraday filter serves as the error signal for frequency stabilization. A residual frequency deviation of < 30MHz is achieved, which is less than 1.5% of the quantum dot linewidth. Long-term stability is demonstrated by Hong-Ou-Mandel interference between photons from the two quantum dots. Their internal dephasing limits the expected visibility to V = 40%. For frequency-stabilized dots, V = (41 ± 5)% is observed as opposed to V = (31 ± 7)% for free-running emission. This technique reaches the maximally expected visibility for the given system and therefore facilitates quantum networks with indistinguishable photons from distributed sources. Based on the presented techniques and improved emission quality, pivotal quantum communication protocols can now be implemented with quantum dots, such as transferring entanglement between photon pairs. Embedding quantum dots in a dielectric antenna ensures a bright emission. For the first time, entanglement swapping between two pairs of photons emitted by a single quantum dot is realized. A joint Bell measurement heralds the successful generation of the Bell state Ψ+ with a fidelity of up to (0.81 ± 0.04). The state's nonlocal nature is confirmed by violating the CHSH-Bell inequality with S = (2.28 ± 0.13). The photon source is tuned into resonance with rubidium transitions, facilitating implementation of hybrid quantum repeaters. This work thus represents a major step forward for the application of semiconductor based entangled photon sources in real-world scenarios.

Single self-assembled semiconductor quantum dots (QDs) are able to emit single-photons and entangled-photons pairs. They are therefore considered as potential candidate building blocks for quantum information processing (QIP) and communication. To exploit them fully, the ability to precisely control their optical properties is needed due to several reasons. For example, the stochastic nature of their growth ends up with only little probability of finding any two or more QDs emitting indistinguishable photons. These are required for two-photon quantum interference (partial Bell-state measurement), which lies at the heart of linear optics QIP. Also, most of the as-grown QDs do not fulfil the symmetries required for generation of entangled-photon pairs. Additionally, tuning is required to establish completely new systems, for example, 87Rb atomic-vapors based hybrid semiconductoratomic (HSA) interface or QDs with significant heavy-hole (HH)-light-hole (LH) mixings. The former paves a way towards quantum memories and the latter makes the optical control of hole spins much easier required for spin- based QIP. This work focuses on the optical properties of a new type of QDs optimized for HSA experiments and their broadband tuning using strain. It was created by integrating the membranes, containing QDs, onto relaxor-ferroelectric actuators and was quantified with a spatial resolution of ~1 µm by combining measurements of the µ-photoluminescence of the regions surrounding the QDs and dedicated modeling. The emission of a neutral exciton confined in a QD usually consists of two fine-structure-split lines which are linearly polarized along orthogonal directions. In our QDs we tune the emission energies as large as ~23meV and the fine-structure-splitting by more than 90 µeV. For the first time, we demonstrate that strain is able to tune the angle between the polarization direction of these two lines up to 40° due to increased strain-induced HH-LH mixings up to ~55%. Compared to other quantum emitters, QDs can be easily integrated into optoelectronic devices, which enable, for example, the generation of non-classical light under electrical injection. A novel method to create sub-micrometer sized current-channels to efficiently feed charge carriers into single QDs is presented in this thesis. It is based on focused-laserbeam assisted thermal diffusion of manganese interstitial ions from the top GaMnAs layer into the underlying layer of resonant tunneling diode structures. The combination of the two methods investigated in this thesis may lead to new QDbased devices, where direct laser writing is employed to preselect QDs by creating localized current-channels and strain is used to fine tune their optical properties to match the demanding requirements imposed by QIP concepts.

Semiconductor quantum dots (QDs) are fascinating systems for potential applications in quantum information processing and communication, since they can emit single photons and polarisation entangled photons pairs on demand. The asymmetry and inhomogeneity of real QDs has driven the development of a universal and fine post-growth tuning technique. In parallel, new growth methods are desired to create QDs with high emission efficiency and to control combinations of closely-spaced QDs, so-called "QD molecules" (QDMs). These systems are crucial for the realisation of a scalable information processing device after a tuning of their interaction energies. In this work, GaAs/AlGaAs QDs with low surface densities, high optical quality and widely tuneable emission wavelength are demonstrated, by infilling nanoholes fabricated by droplet etching epitaxy with different GaAs amounts. A tuning over a spectral range exceeding 10 meV is obtained by inducing strain in the dot layer. These results allow a fine tuning of the QD emission to the rubidium absorption lines, increasing the yield of single photons that can be used as hybrid semiconductor-atomic-interface. By embedding InGaAs/GaAs QDs into diode-like nanomembranes integrated onto piezoelectric actuators, the first device allowing the QD emission properties to be engineered by large electroelastic fields is presented. The two external fields reshape the QD electronic properties and allow the universal recovery of the QD symmetry and the generation of entangled photons, featuring the highest degree of entanglement reported to date for QD-based photon sources. A method for controlling the lateral QDM formation over randomly distributed nanoholes, created by droplet etching epitaxy, is demonstrated by depositing a thin GaAs buffer over the nanoholes. The effect on the nanohole occupancy of the growth parameters, such as InAs amount, substrate temperature and arsenic overpressure, is investigated as well. The QD pairs show good optical quality and selective etching post-growth is used for a better characterisation of the system. For the first time, the active tuning of the hole tunnelling rates in vertically aligned InGaAs/GaAs QDM is demonstrated, by the simultaneous application of electric and strain fields, optimising the device concept developed for the single QDs. This result is relevant for the creation and control of entangled states in optically active QDs. The modification of the electronic properties of QDMs, obtained by the combination of the two external fields, may enable controlled quantum operations.