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Thin film electroluminescence /Mackay, Ian. January 1989 (has links)
Thesis (M.S.)--Rochester Institute of Technology, 1989. / "References": leaves 20-23.
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Integration of thin film GaAs MSM photodetector in fully embedded board-level optoelectronic interconnectsLin, Lei, Chen, Ray T. January 2004 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2004. / Supervisor: Ray T. Chen. Vita. Includes bibliographical references.
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Highly rectifying p-ZnCo2O4/n-ZnO heterojunction diodesSchein, Friedrich-Leonhard, Winter, Markus, Böntgen, Tammo, von Wenckstern, Holger, Grundmann, Marius 10 August 2018 (has links)
We present oxide bipolar heterojunction diodes consisting of p-type ZnCo2O4 and n-type ZnO
fabricated by pulsed-laser deposition. Hole conduction of ZnCo2O4 (ZCO) was evaluated by Hall
and Seebeck effect as well as scanning capacitance spectroscopy. Both, ZCO/ZnO and ZnO/ZCO
type heterostructures, showed diode characteristics. For amorphous ZCO deposited at room
temperature on epitaxial ZnO/Al2O3 thin films, we achieved current rectification ratios up to
2x1010, ideality factors around 2, and long-term stability.
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