The scanning tunneling microscopy is used to study the morphology of Tl adlayer in various stages of Tl desorption from the Si(111) surface and to study behaviour of various adsorbates on the Si(111)/Tl-(1 × 1). The utilization of thallium layer for passivation of the Si(111) was examined closely for various adsorbates. Manganese, aluminium, indium and tin layers which were directly deposited onto the Si(111)-(7 × 7) were compared with the layers prepared by deposition of adsorbate onto the passivating layer after the subsequent thermal desorption of Tl (after annealing at ≈ 400◦ C). Examined adsorbates exhibited signs of extremely high diffusivity and weak bond with the surface Si(111)/Tl- (1 × 1). The passivating layer was stable against the adsorbates.The application of thallium in the role of surfactant caused lowering of temperature and coverage needed for the preparation of reconstructions which were observed on the surfaces prepared by the direct deposition of adsorbate. 1

This thesis is focused on adsorption of phthalocyanines on tin and indium passivated silicon Si(111) surfaces with the √3 × √3 reconstruction at room temperature. Scanning tunneling microscopy was used for obtaining atomically resolved surface images. Molecules on these surfaces predominantly adsorb on Si-substitutional defects. Local density of states (LDOS) of strongly adsorbed molecules was obtained by scanning tunneling spectroscopy. The origin of fuzzy imaging of molecules sitting on Si-substitutional double defects was probed. Voltage dependence of mean lifetime of two observed states, between which the "fuzzy" molecule is switching, was measured by analysis of tunneling current fluctuations. We discussed the influence of external parameters on the switching between the two states. We attribute the fuzzy behaviour of the molecule and resulting tunneling current fluctuations to the motion of the molecule in a double-well potential and propose two most likely kinds of the motion which most closely agree with the obtained data.

Understanding the behaviour of molecules on a semiconductor surface is necessary if molecular self-assembly is going to be employed, with existing semiconductor technology, to create useful devices. Si(111)-7x7 is an invaluable surface upon which to study molecular adsorption. The surface reconstruction has been well characterized and it possesses seven symmetrically distinct dangling bonds that can serve as reaction sites. Aromatic molecules on Si(111)-7x7 have been investigated with a variety of techniques and have been shown to chemisorb at room temperature. However, it is not trivial to predict how an ensemble of aromatic molecules might distribute themselves amongst the available bonding sites on this surface. The work presented in this thesis begins with a joint STM and ab initio investigation of thiophene on 7x7 that demonstrates kinetics are necessary to describe the chemisorption sites occupied at various coverages. A kinetic Monte Carlo model, taking into account a mobile physisorbed state, is shown to accurately describe this site occupancy at room temperature. This model disregards molecule-molecule interaction because thiophene does not sterically hinder chemisorption to a neighbouring dangling bond. A larger molecule, mesitylene, was then studied on Si(111)-7x7, and shown to form an ordered molecular lattice on the Si(111)-7x7 surface. This is the first demonstration of a porous molecular lattice grown on Si(111)-7x7 at room temperature. Finally, molecular chemisorption on the related 5x5 reconstruction, grown by depositing Ge on 7x7, is studied. It is found that the presence of Ge hinders molecular chemisorption, preventing formation of the mesitylene lattice. / Thesis (Ph.D, Physics, Engineering Physics and Astronomy) -- Queen's University, 2009-09-11 10:14:10.118

The hyperfine interaction between carrier spins and nuclear spins is an important component in exploring spin-dependent properties in materials with strong spin orbit interaction.However hyperfine interaction has been less studied in bismuth (Bi), a heavy element exhibiting a strong Rashba-like spin-orbit interaction in its two-dimensional surface states due to the broken spatial inversion symmetry. In this dissertation we experimentally explore the carrier spin polarization due to transport under strong spin-orbit interaction and the nuclear polarization resulting from the relatively unexplored hyperfine interaction on Bi(111) films.The carrier and nuclear spin polarizations are expected to dynamically interact, a topic with ramifications to other materials where surface states with noteworthy properties play a role.To achieve this goal, an optimized van der Waals epitaxy growth technique for Bi(111) on mica substrates was developed and used, resulting in flat Bi surfaces with large grain sizes and a layered step height of 0.39±0.015 nm, corresponding to one Bi(111) bilayer height. A comparison between Bi(111) films grown on three different substrates (mica, InSb(111)B, and Si(111)) is discussed, for which scanning electron microscopy and atomic force microscopy are applied to obtain the structural and morphological characteristics on the film surface. Magnetotransport measurements are carried out to extract the transport properties of theBi(111) films. Using the high quality Bi(111) film deposited on mica, we develop quantum magnetotransport techniques as delicate tools to study hyperfine interaction. The approach is based on measuring quantum corrections to the conductivity due to weak antilocalization, which depend on the coherence of the spin state of the carriers. The carrier spin polarization is generated by a strong DC current in the Bi(111) surface states (here called the Edelstein effect), which then induces dynamic nuclear polarization by hyperfine interaction. Quantum transport antilocalization measurements in the Bi(111) thin-films grown on mica indicate a suppression of antilocalization by the in-plane Overhauser field from the nuclear polarization, and allow for the quantification of the Overhauser field, which is shown to depend on both polarization duration and the DC current magnitude. Various delay times between the polarization and the measurement result in an exponential decay of the Overhauser field, driven by relaxation time T1. We observe that in the Bi surface states, the appreciable electron density and strong spin-orbit interaction allow for dynamic nuclear polarization in the absence of an external magnetic field. / Doctor of Philosophy / This dissertation focuses on the heavy element bismuth (Bi), a semimetal with strong spin-orbit interaction at its two-dimensional surface. Given the challenge to grow high qualityBi(111) films, we present an optimized van der Waals epitaxy technique to grow Bi(111)films on mica substrates, which show a flat surface with large grain sizes and a layered step height of 0.391±0.015 nm, corresponding to one Bi(111) bilayer height. To demonstrate the high quality of the Bi(111) surface, a comparison of surface morphology was conducted among Bi(111) films deposited on three different substrates (mica, Si(111), and InSb(111)B),along with a comparison between their electronic transport properties. By applying a DC current on the high quality Bi(111) film on mica, a carrier spin polarization is established via mainly what we here call the Edelstein effect, which then induces dynamic nuclear polarization by hyperfine interaction and generates a non-equilibrium nuclear spin polarization without externally applied magnetic field. We quantified the Overhauser field from the nuclear polarization all-electrically by conducting quantum transport antilocalization experiments, which showed a suppression of antilocalization by the in-plane Overhauser field.Comparative measurements indicated that the magnitude of the Overhauser field depends onthe spin-polarizing DC current magnitude and the polarization duration. The experiments also show that antilocalization forms a sensitive probe for hyperfine interaction and nuclear polarization.

Les propriétés structurales et électroniques de films ultra-minces d'alcalins (K,Cs) déposés sur un substrat de Si(111)-v3´v3R30:B ont été étudiés par diffraction d'électrons lents (LEED), spectroscopie Auger, microscopie à effet tunnel (STM) et photoemission (ARPES, XPS). Un état de surface de symétrie s-pz a été mis en évidence par photoémission résolue en angle celui-ci présentant un maximum au taux optimal. Le site d'adsorption H3 a été identifié par IV-LEED en accord avec les prédictions théoriques. Nos mesures ARPES mettent en évidence un repliement de la bande de surface, son caractère fortement isolant ainsi qu'une largeur de bande très étroite. Dans le cas des dépôts de Césium, le gap est cependant réduit et il apparaît du poids spectral au niveau de Fermi. Ces résultats sont a priori en accord avec le caractère corrélé de ces états, ceux-ci ayant été définis initialement comme des isolants de Mott. Cependant, nous mettons en évidence dans ce travail une nouvelle reconstruction 2v3´2v3 caractérisée par un quadruplement de la maille de surface et associée à un gain d'énergie des électrons participant à l'état de surface. De plus, la dépendance en température des spectres de photoémission suggèrent un fort élargissement Franck-Condon associé à un fort couplage électron-phonon. L'étude des raies de cœur par photoémission haute résolution sur la ligne CASSIOPEE (synchrotron SOLEIL) nous a permis de mettre en évidence un ordre de charge à la surface pour les deux types de reconstruction observées en LEED. Tous nos résultats expérimentaux indiquent un fort couplage avec le réseau des électrons de l'état de surface induit par les alcalins ce qui n'a jamais été reporté auparavant ni fait l'objet de prédictions. Un scénario basé sur l'établissement d'une onde de densité de charge à la surface dans la limite d'un fort couplage électron-phonon est proposé. IL est proposé que la limite de l'isolant bi-polaronique soit atteinte dans le cas des couches ultra-minces d'alcalins/Si(111) offrant ainsi la possibilité d'étudier le comportement des électrons fortement couplés au réseau en présence de corrélations électroniques sur un réseau triangulaire. / Low energy electron diffraction (LEED), Auger spectroscopy, scanning tunneling microscopy (STM) and angle-resolved photoemission (ARPES) have been used to study ultrathin films of alkali atoms deposited on Si(111)-v3´v3R30:B surface. An alkali-induced surface state of s-pz symmetry has been evidenced by photoemission being maximum close to the saturation coverage of 1/3 monolayer. A quantitative IV-LEED study evidences the H3 alkali adsorption site as predicted by ab initio calculations. High resolution ARPES data presented in this work evidence a band-folding, a large alkali-dependent semi-conducting gap and a narrow bandwidth. The Cs- induced surface band is shown to present a smaller gap together with a non-zero spectral weight at the Fermi level. These results are a priori consistent with the correlated nature of these materials, the Harrison criterion U/W>>1 being fulfilled for these half-filled surface bands. Moreover, a novel 2v3´2v3 lattice and charge ordering has been discovered below 300 K characterized by a quadrupling of the unit cell and a net energy gain for the surface band. In addition, the temperature dependence of the ARPES spectra suggests these materials are characterized by a strong electron-phonon coupling. High resolution core-levels photoemission spectroscopy recorded at the CASSIOPEE beamline (synchrotron SOLEIL) evidence a local charge ordering at surface in both phases. The corresponding band mapping agree well with the 2(v3´v3) symmetry also for both phases. All these experimental results sign a strong interplay between the charge and lattice degrees of freedom which have never been predicted for these semiconducting surfaces. Therefore, a scenario assuming a charge density wave at surface in the strong electron-phonon coupling limit is proposed. As a striking point, the bi-polaronic insulating ground state is proposed to be reached making these alkali/Si(111) semi-conducting surfaces model systems to study polaronic signatures on the physical properties of low dimensional strongly correlated materials.

Extending electronic devices beyond the limitations of current micro-electronics manufacturing will require detailed knowledge of how to make contacts to semiconductor surfaces. In this work, we investigated several methods by which such connections to silicon surfaces could be achieved. Scanning tunneling microscopy (STM) was our main experimental tool, allowing direct imaging of the surfaces at the atomic level. First, the growth of self-forming linear nanostructures of organic molecules on silicon surfaces offers a possibility of creating devices with hybrid organic-silicon functionality. We have studied the growth of many different molecules on a variety of hydrogen-terminated silicon surfaces: H-Si(100)-2x1, H-Si(100)-3x1, and H-Si(111)-1x1. We found molecular growth patterns affected by steric crowding, by sample doping level, or by exposure to ion-pump created radicals. We formed the first contiguous "L-shaped" molecular lines, and used an external electric field to direct molecular growth. We attempted to study a novel method for nanoscale information transfer along molecular lines based on excitation energy transfer. The second part of the work focuses on the development and use of a new multiple-probe STM instrument. The design and the custom STM control software written for it are described. Connections to Si surfaces were achieved with a combination of lithographically defined metal contacts and STM tips. Two-dimensional surface conductivity of the Si(111)-7x7 surface was measured, and the effect of modifying the surface with organic molecules was investigated. A novel method, scanning tunneling fractional current imaging (STFCI), was developed to further study surface conductance. This method allowed us to determine, for the first time, that the resistance of steps on the Si(111)-7x7 surface is significantly higher than that of the surface alone.

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Im Rahmen dieser Arbeit wurden vier Phthalocyanine untersucht: Metallfreies-Phthalocyanin (H2Pc), Kupferphthalocyanin (CuPc) und Fluor-substituiertes Phthalocyanin (F4CuPc und F16CuPc). Das Ziel dieser Arbeit ist die Charakterisierung der elektronischen und chemischen Eigenschaften der Grenzflächen zwischen diesen Molekülen und Silizium. Die Moleküle wurden durch organische Molekularstrahldeposition (OMBD) im Ultrahochvakuum auf wasserstoffpassivierte Si(111)-Substrate aufgedampft. Oberflächensensitive Messmethoden wie Photoemissionsspektroskopie (PES), Bremsstrahlung Isochromaten Spektroskopie (BIS oder IPES - Inverse Photoemissionsspektroskopie) und Spektroskopie der Röntgen-Absorptions-Feinstruktur (NEXAFS – Near Edge X-Ray Absorption Fine Structure) wurden zur Charakterisierung eingesetzt. Um eine Zuordnung der verschiedenen Komponenten in PES und IPES zu ermöglichen, wurden Methoden der Dichtefunktionaltheorie zur theoretischen Berechnung eingesetzt. Die Energieniveauanpassung an der Grenzfläche zwischen der organischen Schicht und der H-Si-Grenzfläche, sowie die Transportbandlücke von H2Pc, CuPc, F4CuPc und F16CuPc wurden mit Hilfe von PES und IPES bestimmt. Die NEXAFS-Messungen ermöglichten eine genaue Bestimmung der Molekülorientierung relativ zum Substrat. Die Auswertung der Daten zeigte unterschiedliche Molekülorientierungen in dünnen und dicken Filmen. Diese Änderungen wurden mit dem bandverbiegungsähnlichen Verlauf der HOMO-und LUMO-Positionen in Verbindung gebracht. Zusätzlich zu diesem Verhalten wiesen die Grenzflächen auch einen Grenzflächendipol auf, welcher durch die unterschiedlichen Austrittsarbeiten der Kontaktmaterialien hervorgerufen wird. Der Einfluss des Grads der Flouridierung wird durch eine ähnlichen Zunahme der Elektronenaffinität (EA), der Austrittsarbeit (WF) und der Ionisierungsenergie (IE) bestätigt. Die elektronischen Eigenschaften von Metall/organische-Schicht-Grenzflächen und von organischen Schichten unter Sauerstoffeinfluss wurden mit Hilfe von PES und IPES untersucht. Die Ag/Pc Grenzflächen zeigten eine Mischung aus HOMO-LUMO-Verschiebungen und Grenzflächendipolbildung. An den Ag/H2Pc- und Ag/F16CuPc- Grenzflächen wurde ein Ladungstransferkomplex gebildet. Auf der CuPc-Schicht physisorbiert das Ag lediglich und im Fall von F4CuPc wird Ladung zu Ag transferiert, wobei eine andauernde n-Typ-Dotierung an der Grenzfläche erzeugt wird. In Analogie zum Fall der Pc/H-Si Grenzfläche wiesen die Dipole, die hier gefunden wurden, eine lineare Abhängigkeit von EA, WF und IE auf und können durch die Differenz zwischen den Austrittsarbeiten vorausgesagt werden. Das Verhalten der dicken organischen Schichten unter Sauerstoffeinfluss kann in zwei Gruppen eingeteilt werden. Eine Gruppe, bestehend aus H2Pc und F4CuPc, wies nur schwache Wechselwirkung auf und der Sauerstoff physisorbiert auf der Pc-Schicht. Die beiden anderen Moleküle, CuPc und F16CuPc konnten einer Gruppe starker Wechselwirkung zugeordnet werden. CuPc bildet einen Ladungstransferkomplex mit Sauerstoff und auf F16CuPc wird eine polarisierte Schicht gebildet. / In the context of this work four Phthalocyanine were studied: Metal-free Phthalocyanine (H2Pc), Copper Phthalocyanine (CuPc) and fluorine-substituted Phthalocyanine (F4CuPc and F16CuPc). The goal of this work is the electronic and chemical characteristics of the interfaces. The molecules were deposited by organic molecular beam deposition (OMBD) in the ultra high vacuum on hydrogen-passivated Si(111)-Substrate. Surface sensitive techniques such as photoemission spectroscopy (PES), bremsstrahlung isochromate spectroscopy (BIS or IPES - inverse photoemission spectroscopy) and near edge X-ray absorption fine structure spectroscopy (NEXAFS) were used for characterisation. Theoretical computations by density functional theory methods were employed, in order to assign different components in PES and IPES. The energy level alignment at the organic/H-Si interface, as well as the transport gap of H2Pc, CuPc, F4CuPc and F16CuPc were determined by PES and IPES. The NEXAFS measurements determine the exact molecular orientation with respect to the substrate. The evaluation of the data showed different molecular orientation in the thin and thick films. This change was correlated with the band bending like behaviours that emerged at these interfaces. In addition to the band bending like behaviour, the interfaces show also an interface dipole which is driven by the work function difference between the contact materials. The influence of the degree of fluorination is confirmed in the similar increase of the EA, WF and IE. The electronic properties of metal/organic layer interfaces and of organic layer under oxygen influence were examined by PES and IPES. The Ag/Pc interfaces show a mixture of HOMO-LUMO shifts and interface dipole formation. A charge transfer complex is formed in the case of Ag/H2Pc and Ag/F16CuPc interfaces. Ag is physisorbed atop the CuPc. Charge transfers from F4CuPc to Ag creating a continuous n-type doping at the interface. Similar to the Pc/H-Si interfaces the interface dipoles found here show a linear dependence on the EA, WF and IE and can be predicted by the difference in the work functions. The data evaluation of oxygen exposed thick films determined two groups of behaviours. The weak interaction group is represented by H2Pc and F4CuPc, Pcs on which oxygen is physisorbed. The strong interaction group contains the other two molecules CuPc and F16CuPc. CuPc forms a charge transfer complex with oxygen and on top of F16CuPc a polarized layer is formed.

Silver (Ag) is an ideal low-loss platform for plasmonic applications, but from a materials standpoint it presents challenges. Development of plasmonic devices based on Ag thin film has been hindered both by the dificulty of fabricating such film and by its fragility out of vacuum. Silver is non-wetting on semiconducting and insulating substrates, but on certain semiconductors and insulators can adopt a metastable atomically at epitaxial film morphology if it is deposited using the "two-step" growth method. This method consists of deposition at low temperature and annealing to room temperature. However, epitaxial Ag is metastable, and dewets out of vacuum. The mechanisms of dewetting in this system remain little understood. The fragility of Ag film presents a particular problem for the engineering of plasmonic devices, which are predicted to have important industrial applications if robust low-loss platforms can be developed. This dissertation presents two sets of experiments. In the first set, scanning probe techniques and low energy electron microscopy have been used to characterize Ag(111) growth and dewetting on two orientations of silicon (Si), Si(111) and Si(100). These studies reveal that multiple mechanisms contribute to Ag film dewetting. Film stability is observed to increase with thickness, and thickness to play a decisive role in determining dewetting processes. A method has been developed to cap Ag film with germanium (Ge) to stabilize it against dewetting. The second set of experiments consists of optical studies that focus on the plasmonic properties of epitaxial Ag film. Because of the problems posed until now by epitaxial Ag growth and stabilization, research and development in the area of plasmonics has been limited to devices based on rough, thermally evaporated Ag film, which is robust and simple to produce. However, plasmonic damping in such film is higher than in epitaxial film. The optical studies presented here establish that Ag film can now be stabilized sufficiently to allow optical probing and device applications out of vacuum. Furthermore, they demonstrate the superiority of epitaxial Ag film relative to thermally evaporated film as a low-loss platform for plasmonic devices spanning the visible and infrared regimes. / text