Abstract In this thesis, we have fabricated a novel poly-Si thin film transistor with self-aligned SiGe raised source/drain (SiGe-RSD TFT). The SiGe-RSD regions were grown selectively by ultra-high vacuum chemical vapor deposition (UHVCVD) at 550¢J. The resultant transistor structure features a thin active channel region and a self-aligned thick source/drain region, which is ideally suited for optimum performance. A significant improvement on the turn-on current in the transfer characteristics is observed, compared to the conventional TFT counterpart. While the conventional TFT depicts severe resistance-limited output characteristics, especially at high gate bias, due to large source and drain series resistance. The new device, in contrast, exhibits excellent output characteristics. Finally, with comparable leakage current in both structures, the on/off current ratio is approximately 2 order of magnitudes higher in the proposed SiGe-RSD TFTS