Silicon nanocrystals embedded in silicon nitride have received attention as promising materials for optoelectronic applications. More specifically, band gap engineering of novel materials based on silicon nanocrystals has been proposed for possible application in an all-silicon tandem solar cell within the field of `third generation' photovoltaics. Such an application would require nanocrystals to exhibit quantum confinement whereby the optical and electrical properties of a film could be tuned by controlling the size of these `quantum dots'. This thesis investigates the correlation between the structural and optical properties of silicon nanocrystals grown in silicon nitride multilayer structures via solid phase crystallisation, as part of an experimental investigation into quantum confinement. A study of the relevant processing parameters for the solid phase crystallization of silicon nanocrystals in amorphous silicon nitride is presented and the effectiveness of the multilayer approach for controlling nanocrystal size is demonstrated. Structural characterisation using transmission electron microscopy and glancing incidence x-ray diffraction is complemented with a new application of Fourier transform infrared spectroscopy for the detection of silicon nanocrystals. A case study on the effects of annealing temperature on the photoluminescence from silicon nitride multilayers is presented. While a clear correlation between the structural, molecular and optical properties is demonstrated, evidence of quantum confinement remains ambiguous. The investigation into the limits of parameter space for the formation of silicon nanocrystals in silicon nitride multilayers also leads to the formation of a novel Si-Si3N4 nanocomposite material. A comprehensive study of the photoluminescence from silicon nanocrystals embedded in nitride is presented in the context of homogeneous and multilayer nitride films. Size dependent PL and absorption is demonstrated for silicon nitride multilayers with silicon-rich silicon nitride layer thicknesses varying from 1 to 4.5 nm, indicating the formation of quantum wells. These same structures are annealed to form arrays of silicon nanocrystals. Although the PL and absorption spectra suggest quantum effects, inherent ambiguities remain. The findings in this thesis provide greater insight into the nature of confinement and indicate the need for further research if the successful implementation of these structures into an all silicon tandem cell is to be achieved.

Silicon nanocrystals embedded in silicon nitride have received attention as promising materials for optoelectronic applications. More specifically, band gap engineering of novel materials based on silicon nanocrystals has been proposed for possible application in an all-silicon tandem solar cell within the field of `third generation' photovoltaics. Such an application would require nanocrystals to exhibit quantum confinement whereby the optical and electrical properties of a film could be tuned by controlling the size of these `quantum dots'. This thesis investigates the correlation between the structural and optical properties of silicon nanocrystals grown in silicon nitride multilayer structures via solid phase crystallisation, as part of an experimental investigation into quantum confinement. A study of the relevant processing parameters for the solid phase crystallization of silicon nanocrystals in amorphous silicon nitride is presented and the effectiveness of the multilayer approach for controlling nanocrystal size is demonstrated. Structural characterisation using transmission electron microscopy and glancing incidence x-ray diffraction is complemented with a new application of Fourier transform infrared spectroscopy for the detection of silicon nanocrystals. A case study on the effects of annealing temperature on the photoluminescence from silicon nitride multilayers is presented. While a clear correlation between the structural, molecular and optical properties is demonstrated, evidence of quantum confinement remains ambiguous. The investigation into the limits of parameter space for the formation of silicon nanocrystals in silicon nitride multilayers also leads to the formation of a novel Si-Si3N4 nanocomposite material. A comprehensive study of the photoluminescence from silicon nanocrystals embedded in nitride is presented in the context of homogeneous and multilayer nitride films. Size dependent PL and absorption is demonstrated for silicon nitride multilayers with silicon-rich silicon nitride layer thicknesses varying from 1 to 4.5 nm, indicating the formation of quantum wells. These same structures are annealed to form arrays of silicon nanocrystals. Although the PL and absorption spectra suggest quantum effects, inherent ambiguities remain. The findings in this thesis provide greater insight into the nature of confinement and indicate the need for further research if the successful implementation of these structures into an all silicon tandem cell is to be achieved.

Thesis (Ph. D.)--University of Texas at Austin, 2004. / Supervisor: Brian A. Korgel. Vita. Includes bibliographical references.

Silicon nanocrystals (NCs), especially Si NCs embedded in SiO₂, have been studied intensely for decades for their potential application in silicon photonics, especially as efficient room temperature light emitters. Despite progress in fabricating photonic devices from Si NCs, the origin of the efficient photoluminescence (PL), the electronic and microscopic structure of the nanocrystals, and the structure of the elusive NC/SiO₂ interfaces for the oxide-embedded nanocrystals, remain controversial. Optical spectroscopy provides a powerful noninvasive tool for probing the structure of the Si NCs, including the active buried NC/SiO₂ interfaces of embedded particles. In this thesis work, oxide-embedded and free-standing alkyl-passivated silicon nanocrystals, prepared by different techniques, have been studied by linear and nonlinear optical spectroscopies. Cross-polarized 2-beam second-harmonic and sum-frequency generation (XP2-SHG/SFG) has been applied spectroscopically to study oxide embedded Si NCs of different sizes (3 to 5 nm diameter) and interface chemistries. The SHG/SFG spectra of silicon nanocrystals (Si NCs) prepared by implanting Si ions uniformly into silica substrates, then annealing, are compared and contrasted to their spectroscopic ellipsometric (SE) and photoluminescence excitation (PLE) spectra. Three resonances--two close in energy to E₁ (3.4 eV) and E2 (4.27 eV) critical-point resonances of crystalline silicon (c-Si), and a broad resonance intermediate in energy between E₁ and E₂--are observed in all three types of spectra. These features are observed in conjunction with a sharp 520 cm⁻¹ Raman peak characteristic of c-Si and an a-Si tail in the Raman spectra. The appearance of bulk-like CP resonances in the parallel PLE, SE and SHG/SFG spectra from Si NCs suggests the basic electronic structure of the bulk c-Si is preserved in nano-particles as small as 3 nm in diameter, albeit with significant size-dependent modification. At the same time, the prominence of a non-bulk-like resonance intermediate in energy between E₁ and E₂ CPs in all three types of spectra demonstrates the important contribution of nano-interfaces to the electronic structure.We also applied Raman spectroscopy to study oxide-embedded and oxide-free alkyl-passivated Si NCs with diameters ranging from 3 nm to greater than 10 nm synthesized by thermal decomposition of hydrogen silsesquioxane (HSQ). While oxide matrix complicates the size-dependence of the Raman peak shift for oxide-embedded nanocrystals, the Raman peak of the free-standing alkyl-passivated Si NCs shifts monotonically with NC size. / text

Aim of this work was, to investigate the preparation of Si NC memories by sputter deposition. The milestones are as follows: - Review of relevant literature. - Development of processes for an ultrathin tunnel-oxide and high quality sputtered SiO2 for use as control-oxide. - Evaluation of methods for the preparation of an oxygen-deficient silicon oxide inter-layer (the precursor of the Si NC layer). - Characterization of deposited films. - Establishment of techniques capable of probing the phase separation of SiOx and the formation of Si NC. - Establishment of annealing conditions compatible with the requirements of current CMOS technology based on experimental results and simulations of Si NC formation. - Preparation Si NC memory capacitors using the developed processes. - Characterization of these devices by suitable techniques. Demonstration of their memory functionality.

Aim of this work was, to investigate the preparation of Si NC memories by sputter deposition. The milestones are as follows: - Review of relevant literature. - Development of processes for an ultrathin tunnel-oxide and high quality sputtered SiO2 for use as control-oxide. - Evaluation of methods for the preparation of an oxygen-deficient silicon oxide inter-layer (the precursor of the Si NC layer). - Characterization of deposited films. - Establishment of techniques capable of probing the phase separation of SiOx and the formation of Si NC. - Establishment of annealing conditions compatible with the requirements of current CMOS technology based on experimental results and simulations of Si NC formation. - Preparation Si NC memory capacitors using the developed processes. - Characterization of these devices by suitable techniques. Demonstration of their memory functionality.

The application of silicon nanocrystals as non-toxic bio-labels and downconverters requires their uniform size distribution in order to minimize the inhomogeneous broadening of the photoluminescence peak. In this thesis, we set the basis for their size-separation via the density-gradient centrifugation method. To be more precise, we successfully apply this technique to separate 5 and 10 nm gold nanoparticles from an ensemble by using an engineered medium layer stack. In addition, we explain how atomic force microscopy is used to measure the size of the nanoparticles, with a particular attentionon the removal of unwanted solvent-related effects. As a future plan, we will implement the technique for the size-separation of silicon nanocrystals.

Silicon nanocrystals (SiNCs) are nanometer-sized semiconducting materials. Their small size endows them with unique photophysical properties. Efficient photoluminescence (PL) from silicon nanocrystal (SiNC) composites has important implications for emerging solar-energy collection technologies, yet a detailed understanding of PL relaxation in non-colloidal SiNCs is still materializing. In this dissertation, we examine the photophysical properties of silicon nanocrystal/off-stoichiometry thiol-ene composites (SiNCs/OSTE hybrids). The dissertation begins with an introduction to the photophysical properties of SiNCs, their photophysical properties, how SiNC/polymer composites are made, the various SiNC preparation techniques, and the most likely application areas for these nanocrystals. A description of experimental methods such as PL spectroscopy and transmission electron microscopy (TEM) follows, and SiNC/OSTE polymer preparation methods are then explained in detail. In the first study, TEM and photophysical characterization were performed on selected polydisperse SiNCs samples. These samples were synthesized in a nonthermal plasma reactor, using Si6H12 as precursor, and functionalized with R (where R is 1-dodecene). These SiNCs were dispersed in mesitylene:1-dodecene (5:1) as a colloid. Optical absorption, quantum efficiency, and PL lifetime of SiNCs were then investigated, as well as the relationship between quantum yield, lifetime, and PL peak. In the second study, we selected samples for size separation via the density gradient ultracentrifugation method (DGU). We successfully applied this technique to separate silicon nanocrystals with sizes from 2 nm to 4 nm from the ensemble samples using an engineered density medium layer stack, and photophysical characterization was performed on the DGU size–separated SiNCs. Lastly, we explored details of PL relaxation in photo-polymerized off-stoichiometric polymer/nanocrystal hybrids. We found time- and air-stable emission from dilute composites with up to 70% QY, and we investigated PL relaxation in the parameter space of nanocrystal size and temperature. In light of previous work, our results reveal similarities between the impacts of crosslinking and cooling to cryogenic temperature, but of which are characterized by a relative reduction in the available of phonons.

This thesis examines the optical properties of nanoscale silicon and the sensitization of Er with Si. In this context, it predominantly investigates the role of defects in limiting the luminescence of Si nanocrystals, and the removal of these defects by hydrogen passivation. The kinetics of the defect passivation process, for both molecular and atomic hydrogen, are studied in detail. Moreover, the optical absorption of Si nanocrystals and the effect of annealing environment (during nanocrystal synthesis) on the luminescence are investigated. The effect of annealing temperature and hydrogen passivation on the coupling (energy transfer) of Si nanocrystals to optically active centres (Er) is also examined.¶ The electronic structure of silicon-implanted silica slides is investigated through optical absorption measurements. Before and after annealing to form Si nanocrystals, optical absorption spectra from these samples show considerable structure that is characteristic of the particular implant fluence. This structure is shown to correlate with the transmittance of the samples as calculated from the modified refractive index profile for each implant. Due to the high absorption coefficient of Si at short wavelengths, extinction at these wavelengths is found to be dominated by absorption. As such, scattering losses are surprisingly insignificant. To eliminate interference effects, photothermal deflection spectroscopy is used to obtain data on the band structure of Si in these samples. This data shows little variance from bulk Si structure and thus little effect of quantum confinement. This is attributed to the dominance of large nanocrystals in the absorption measurements.¶ The effect of annealing environment on the photoluminescence (PL) from silicon nanocrystals synthesized in fused silica by ion implantation and thermal annealing is studied as a function of annealing temperature and time. Interestingly, the choice of annealing environment (Ar, N2, or 5 % H2 in N2) is found to affect the shape and intensity of luminescence emission spectra, an effect that is attributed both to variations in nanocrystal size and the density of defect states at the nanocrystal/oxide interface.¶ The passivation kinetics of luminescence-quenching defects, associated with Si nanocrystals in SiO2, during isothermal and isochronal annealing in molecular hydrogen are studied by time-resolved PL. The passivation of these defects is modeled using the Generalized Simple Thermal model of simultaneous passivation and desorption, proposed by Stesmans. Values for the reaction-rate parameters are determined for the first time and found to be in excellent agreement with values previously determined for paramagnetic Si dangling-bond defects (Pb type centers) found at planar Si/SiO2 interfaces; supporting the view that non-radiative recombination in Si nanocrystals is dominated by such defects.¶ The passivation kinetics of luminescence-quenching defects during isothermal and isochronal annealing in atomic hydrogen are studied by continuous and time-resolved PL. The kinetics are compared to those for standard passivation in molecular hydrogen and found to be significantly different. Atomic hydrogen is generated using the alneal process, through reactions between a deposited Al layer and H2O or –OH radicals in the SiO2. The passivation and desorption kinetics are shown to be consistent with the existence of two classes of nonradiative defects: one that reacts with both atomic and molecular hydrogen, and the other that reacts only with atomic hydrogen. A model incorporating a Gaussian spread in activation energies is presented that adequately describes the kinetics of atomic hydrogen passivation and dissociation for the samples.¶ The effect of annealing temperature and hydrogen passivation on the excitation cross-section and PL of erbium in silicon-rich silica is studied. Samples are prepared by co-implantation of Si and Er into SiO2 followed by a single thermal anneal at temperatures ranging from 800 to 1100 degrees C, and with or without hydrogen passivation performed at 500 degrees C. Using time-resolved PL, the effective erbium excitation cross-section is shown to increase by a factor of 3, while the number of optically active erbium ions decreases by a factor of 4 with increasing annealing temperature. Hydrogen passivation is shown to increase the luminescence intensity and to shorten the luminescence lifetime at 1.54 micron only in the presence of Si nanocrystals. The implications of these results for realizing a silicon-based optical amplifier are also discussed.

This thesis examines the luminescence properties of nanoscale silicon (Si) by using spectroscopic techniques. Since the development of new optical devices requires understanding light emission mechanism optical spectroscopy has become more important tool in the analysis of these structures. In this thesis, Si nanocrystals embedded in SiO2 matrix will be studied. Photoluminescence (PL) and Time-resolved photoluminescence spectroscopy (TRPL) have been used to detect the light emission in UV-Vis-NIR range. Experiments have been performed in the temperature range 10-300 K. PL is sensitive to impurities and defects that affect materials quality and device performance. In this context, the role of defects in limiting the luminescence of Si nanocrystals and the removal of these defects by hydrogen passivation has been investigated. v TRPL was employed to determine the time evolution of photoluminescence as function of temperature. The decay time of the PL spectra was determined by a stretched exponential function and perfectly fitted to an expression based on three excitonic levels. Carrier lifetimes associated with these three levels were determined and compared with literature. Additionally, temporal variation of PL from free-standing Si nanoparticles is studied under a strong laser illumination. The observed bleaching behavior (time dependent emission intensity), which is reversible, have discussed in terms of exciton trapping at the interface between nanocrystal and the surrounding oxide layer. The results of this thesis will provide new insight on the understanding of light emission mechanism of Si nanocrytals.