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Examination of the mechanism by which lithium additives inhibit alkali-silica reaction gel expansionCollins, Courtney Lloyd 05 1900 (has links)
No description available.
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Global optimization of passivated Si clusters at the ab initio level via semiempirical methodsGe, Yingbin January 2004 (has links)
Mode of access: World Wide Web. / Thesis (Ph. D.)--University of Hawaii at Manoa, 2004. / Includes bibliographical references (leaves 167-178). / Electronic reproduction. / Also available by subscription via World Wide Web / xvi, 178 leaves, bound ill. 29 cm
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Towards an erbium-doped waveguide amplifier sensitized by silicon nanoclustersLenz, Florian C. January 2009 (has links)
Thesis (M. Sc.)--University of Alberta, 2009. / Title from PDF file main screen (viewed on July 21, 2009). A thesis submitted to the Faculty of Graduate Studies and Research in partial fulfillment of the requirements for the degree of Master of Science in Communications and Signal Processing, Department of Electrical and Computer Engineering, University of Alberta. Includes bibliographical references.
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Global optimization of passivated Si clusters at the ab initio level via semiempirical methodsGe, Yingbin. January 2004 (has links)
Thesis (Ph. D.)--University of Hawaii at Manoa, 2004. / Includes bibliographical references (leaves 167-178).
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Spectroscopic studies of vanadium and chromium in crystalline and amorphous silica matricesCarter, Donald F. Stiegman, Albert E. January 2004 (has links)
Thesis (Ph. D.)--Florida State University, 2004. / Advisor: Dr. Albert E. Stiegman, Florida State University, College of Arts and Sciences, Dept. of Chemistry and Biochemistry. Title and description from dissertation home page (viewed Sept. 27, 2004). Includes bibliographical references.
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Development of a high-speed, monolithically integrated silicon optical receiver /Schow, Clint Lee, January 1999 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 1999. / Vita. Includes bibliographical references (leaves 189-199). Available also in a digital version from Dissertation Abstracts.
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Rearrangements of propargyl selenoxides ; Silyloxyallyl- and -allenyllithium reagents from acylsilanesOlson, Richard Eric. January 1982 (has links)
Thesis (Ph. D.)--University of Wisconsin--Madison, 1982. / Typescript. Vita. eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references.
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An investigation of the Si-O-C system, including compatibility relations, kinetics of reactions, and equilibrium information /Chapman, A. T. January 1960 (has links)
No description available.
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Friction and wear of selected metal ceramic and polycrystalline diamond sliding couplesDamn, Oliver Frank Rudolf August January 2017 (has links)
A thesis submitted to the Faculty of engineering. University of Witwatersrand.
Johannesburg, in fulfilment of the requirements for the Degree of Doctor of Philosophy
Pretoria, 1995 / This thesis describes a study of the friction and wear characteristics of a range of oxide and
silicon-based ceramics sliding against AlSI 440C stainless steel, as well as various sliding
combinations of two types of De Beers polycrystalline diamond (PCD), namely Syndite and
Syndax, To facilitate the former work, a high-speed reciprocating sliding test machine with
computerized data acquisition and control was developed.
It was confirmed that under water-lubricated sliding, the oxide ceramics (alumina, PSZ, 3YTZP,
and Ce-TZP) showed higher friction coefficients and Weal' rates than the silicon-based
ceramics (Sialon and silicon nitride). This was related to different levels of adhesion and the
formation of metallic transfer films. For the zirconia ceramics, increased transformation
toughening was associated with increased surface fracture damage and metallic film formation.
In general, the metallic transfer films were beneficial, protecting the underlying ceramic and
dominating the friction and wear behaviour. The superior performance of the silicon-based
ceramics was related to the formation of lubricious tribofilms containing silicon oxides and
hydroxides.
Experiments with synthetic mine water as lubricant demonstrated that the presence of
significant amounts of chloride and sulphate in the water generally reduced friction and wear.
This was tentatively explained in terms of reduced adhesion and the promotion of iron oxide
and hydroxide formation. It is suggested that the influence of sulphate may be more
important in thi'3 regard than that of chloride.
The tribological behaviour of self-mated Syndite PCD sliding couples is dominated by the
formation of Co-rich trlbofilms, which nrc associated with increased friction coefficients and
reduced load carrying capacity (LCC). Syndax, which employs silicon as the binder phase,
shows lower friction coefficients anti higher LCe under both dry and water-lubricated sliding
conditions. Mixed Syndax/Syndite couples show superior performance to self-mated Synditc
tinder dry sliding conditions, but 110 improvements in the presence of water. The former
effect is related to the preferential removal of Co 11'0111 the Syndite surface to the Syndax / GR 2017
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A Study on the properties of amorphous boron and borne-silicon alloy films prepared by low pressure chemical vapour deposition.January 1991 (has links)
by Ong Chung Wo. / Title also in Chinese. / Thesis (Ph.D.)--Chinese University of Hong Kong. / Bibliography: leaves 258-263. / Acknowledgements / Abstract / Table of Contents / Chapter Chapter 1 --- Introduction --- p.1 / Chapter Chapter 2 --- Sample Preparation --- p.6 / Chapter A. --- General Review of Chemical Vapour Deposition Technique --- p.6 / Chapter B. --- Our Deposition System --- p.9 / Chapter B.1 --- General Description --- p.9 / Chapter B.2 --- Induction Heater --- p.10 / Chapter B.3 --- Graphite Susceptor --- p.12 / Chapter B.4 --- Safety --- p.13 / Chapter C. --- Sample Description --- p.16 / Chapter Chapter 3 --- Thickness Measurement --- p.26 / Chapter Chapter 4 --- Composition Analysis --- p.29 / Chapter A. --- Introduction --- p.29 / Chapter B. --- Composition Analysis of Boron-Silicon Films Using EDX --- p.32 / Chapter B.1 --- Experimental Method --- p.32 / Chapter B.2 --- Requirement on Film Thickness and Preparation of Unsupported Films --- p.33 / Chapter B.3 --- Possible Applications and Limitations of Our Method --- p.35 / Chapter B.4 --- Results --- p.35 / Chapter Chapter 5 --- X-ray Diffraction Experiment --- p.42 / Chapter A. --- Introduction --- p.42 / Chapter B. --- Structures of Boron and Silicon-Boron Compounds --- p.43 / Chapter B.1 --- B12 Icosahedron and Three-Center Two-Electron Bond --- p.43 / Chapter B.2 --- Polymorphism of Crystalline Boron --- p.44 / Chapter B.2.1 --- α-Rhombohedral Boron --- p.44 / Chapter B.2.2 --- β-Rhombohedral Boron --- p.45 / Chapter B.2.3 --- Amorphous Boron --- p.47 / Chapter B.3 --- Structures of Crystalline Boron-Silicon Compounds --- p.48 / Chapter C. --- X-ray Diffraction Experiment --- p.50 / Chapter C.1 --- Experimental Technique --- p.50 / Chapter C.2 --- Analysis of X-Ray Diffraction Pattern --- p.50 / Chapter D. --- Results and Discussion --- p.51 / Chapter D.1 --- Boron Films --- p.51 / Chapter D.2 --- Boron-Silicon Films --- p.57 / Chapter Chapter 6 --- Infrared Absorption Experiment --- p.84 / Chapter A. --- Experimental Method --- p.84 / Chapter B. --- Results --- p.87 / Chapter C. --- Discussion --- p.88 / Chapter C.1 --- Analysis of Boron Films --- p.88 / Chapter C.1.1 --- Indentification of Three Absorption Bands --- p.88 / Chapter C.1.2 --- Effect of Substrate Temperature --- p.91 / Chapter C.2 --- Analysis of Boron-Silicon Films --- p.92 / Chapter C.2.1 --- Effect of Substrate Temperature --- p.92 / Chapter C.2.2 --- Effect of Silicon Incorporation --- p.93 / Chapter C.2.3 --- Existence of Icosahedral Clusters --- p.94 / Chapter C.3 --- Comparative Study of Deposition Mechanism Between Thermal CVD Method and Glow Discharge Method --- p.94 / Chapter Chapter 7 --- Microhardness and Surface Morphology --- p.111 / Chapter A. --- Measuring Techniques --- p.111 / Chapter B. --- Microhardness Measurement --- p.113 / Chapter B.1 --- Boron Films --- p.113 / Chapter B.2 --- Boron-Silicon Films --- p.114 / Chapter C. --- Surface Morphology --- p.114 / Chapter C.1 --- Boron Films --- p.114 / Chapter C.2 --- Boron-Silicon Films --- p.115 / Chapter Chapter 8 --- Optical Absorption Experiment --- p.127 / Chapter A. --- Introduction --- p.127 / Chapter B. --- Theory of Optical Absorption --- p.128 / Chapter B.1 --- Absorption of Crystalline Materials --- p.129 / Chapter B.2 --- Optical Absorption of Amorphous Materials --- p.132 / Chapter C. --- Results --- p.135 / Chapter C.1 --- Boron Films --- p.135 / Chapter C.2 --- Boron-Silicon Films --- p.136 / Chapter D. --- Analysis --- p.138 / Chapter D.1 --- Band Models --- p.138 / Chapter D.2 --- Deconvolution of Absorption Spectra --- p.140 / Chapter D.2.1 --- Deconvolution of Absorption Spectra of Boron Films --- p.141 / Chapter D.2.2 --- Deconvolution of Absorption Spectra of Boron-Silicon Films --- p.144 / Chapter D.2.3 --- Results --- p.146 / Chapter E. --- Discussion --- p.149 / Chapter Chapter 9 --- Conductivity and Thermoelectric Power Measurements --- p.203 / Chapter A. --- Transport Mechanism in Amorphous Semiconductors --- p.203 / Chapter A.1 --- Band Models of Amorphous Semiconductors --- p.203 / Chapter A.2 --- Electrical Conductivity and Thermoelectric Power --- p.205 / Chapter B. --- Experimental Methods --- p.208 / Chapter C. --- Results --- p.209 / Chapter C.1 --- Boron Films --- p.209 / Chapter C.2 --- Boron-Silicon Films --- p.210 / Chapter D. --- Discussion --- p.212 / Chapter D.1 --- Boron Films --- p.212 / Chapter D.2 --- Boron-Silicon Films --- p.213 / Chapter Chapter 10 --- Electron Spin Resonance --- p.230 / Chapter A. --- Introduction --- p.230 / Chapter B. --- Experimental Method --- p.231 / Chapter C. --- Results --- p.231 / Chapter C.1 --- Boron Films --- p.231 / Chapter C.2 --- Boron-Silicon Deposited at 300°C --- p.232 / Chapter C.3 --- Boron-Silicon Deposited at 460 and 620°C --- p.233 / Chapter D. --- Discussion --- p.235 / Chapter D.1 --- Boron Films --- p.235 / Chapter D.2 --- Boron-Silicon Films --- p.237 / Chapter Chapter 11 --- Conclusion --- p.254 / Chapter A. --- Structure --- p.254 / Chapter B. --- Mechanical Properties --- p.256 / Chapter C. --- Optical Absorption and Density of States --- p.256 / Chapter D. --- Electrical Properties --- p.257 / References --- p.258
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