Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009. / Committee Chair: Cressler, John; Committee Member: Deo, Chaitanya; Committee Member: Doolittle, Alan; Committee Member: Keezer, David; Committee Member: May, Gary; Committee Member: Papapolymerou, John. Part of the SMARTech Electronic Thesis and Dissertation Collection.

We present a theoretical study of the electronic structure, surface energies and work functions of orthorhombic Pt monosilicide and germanides of Pt, Ni, Y and Hf within the framework of density functional theory (DFT). Calculated work functions for the (001) surfaces of PtSi, NiGe and PtGe suggest that these metals and their alloys can be used as self-aligned contacts to p-type silicon and germanium. In addition, we also study electronic structure and calculate the Schottky-barrier height at Si(001)/PtSi(001) interface and GaAs(001)/NiPtGe(001) interfaces with different GaAs(001) and NiPtGe (001) terminations. The p-type Schottky barrier height of 0.28 eV at Si/PtSi interface is found in good agreement with predictions of a simple metal induced gap states (MIGS) theory and available experiment. This low barrier suggests PtSi as a low contact resistance junction metal for silicon CMOS technology. We identify the growth conditions necessary to stabilize this orientation. The calculated p-type Schottky barrier heights (SBH) at different GaAs/NiPtGe interfaces vary by as much as 0.18 eV around the average value of 0.5 eV. We further identify and discuss factors responsible for strong Fermi level pinning resulting in small variation in the p-SBH. We also present a theoretical study of magnetic state of [beta]-MaAs and show that it is antiferromagnetic and explain the lack of observed long-range order.

Thesis (Ph. D.)--University of Adelaide, Dept. of Organic Chemistry, 1985. / Includes bibliographical references (leaves 177-193).

Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.

Thesis (Ph. D. in Chemistry)--Vanderbilt University, May 2006. / Title from title screen. Includes bibliographical references.

Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009. / Committee Chair: Cressler, John D.; Committee Member: Papapolymerou, John; Committee Member: Ralph, Stephen; Committee Member: Shen, Shyh-Chiang; Committee Member: Zhou, Hao Min.

Thesis (M.S.)--Brigham Young University. Dept. of Civil and Environmental Engineering, 2005. / Includes bibliographical references (p. 57-61).

Thesis (M.S.)--Rochester Institute of Technology, 1992. / Typescript. Includes bibliographical references (leaves 65-68).

The main material studied in this project is silicon oxide phosphate, often referred to in the literature as Si₅O(PO₄)₆. This material has highly unusual coordination of the silicon (octahedral, as well as the more common tetrahedral). The structure is hexagonal, it has been assigned to space group R -3 and lattice parameters a ≈ 7.85 Å, c ≈ 24.14 Å. This work's main focus is on understanding the interplay between structure and properties in order to enhance protonic conductivity for a fuel cell electrolyte. Silicon oxide phosphate was synthesised with the solid-state method, using a gel precursor made from H₃PO₄, water and SiO₂. Various compositions were made with different P/Si starting ratios, ranging between 0.57 - 1.5. There were small but significant differences in the a,b axes for the different compositions that corresponded to conductivity behaviour of hydrothermally treated P-Si compositions. This correlation was also found to appear in ³¹P NMR for the chemical shift at - 44 ppm for untreated P-Si compositions as well as in the temperatures of the DTA peaks for the hydrothermally treated compositions. This all implies that this particular P-Si system with the addition of water becomes a ternary system that enables protonic conductivity. A proposed mechanism for the protonic conductivity is given where it is suggested that protons flow along the internal channels of the structure using two waters that provide dual pathways for protons. This is possible through utilization of a proton thought to be in the structure (a P_OH bond of 1.57 Å). Protonic conductivity could further be increased in the system by incorporating 85% H₃PO₄ in the P-Si materials, thus these materials act as matrices for the phosphoric acid. Another composition, Ge₅O(PO₄)₆ with 5% extra germanium, was hydrothermally treated and found to have protonic conductivity at higher temperatures than the silicon oxide phosphate analogues.

1,1-Dimethyl-2-neopentylsilene reacted with the N-methylimine of benzophenone to give 1,2,2-trimethyl-3- neopentyl-4,4-diphenyl-l-aza-2-silacyclobutane, I, and 2,3,4,4a-tetrahydro-2,3,3-trimethyl-1-phenyl-4-neopentyl-2- aza-3-silanephthalene, II, in 35% and 20% yields, respectively. Compounds I and II did not serve as thermal silene precursors. Heating I and II to over 280°C did not yield 1,3-disilacyclobutanes. In the presence of 2,3- dimethyl-1,3-butadiene typical silene products were not obtained. However, I and II reacted rapidly with methanol at room temperature to give the ring-opened products (E)-2- methoxy-2,5,5-trimethyl-2-silahex-3-ene, III, 1,1- diphenyldimethylamine, IV, and 2-methoxy-2,5,5-trimethyl-3- (N-methylaminodiphenyl) methyl-2-silahexane, V.