Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009. / Committee Member: David R. Hertling; Committee Member: Farrokh Ayazi; Committee Member: Gary S. May; Committee Member: Oliver Brand; Committee Member: Paul A. Kohl. Part of the SMARTech Electronic Thesis and Dissertation Collection.

A microelectromechanical systems (MEMS)-based environmental monitoring platform was presented in this dissertation. All devices were realized using thin-film piezoelectric-on-substrate (TPoS) technology, which provides a path to integrate various functionalities on a single substrate with MEMS components. TPoS resonators exhibit high quality factors (Qs) in air and are capable of low-power oscillator implementation, which further qualifies such a platform for mobile and portable systems. To validate the TPoS platform, gravimetric humidity sensing was demonstrated with thermally-corrected output by an uncoated "reference" temperature sensor. Also presented were TPoS sensors for toluene and xylene, which are pollutants of great importance for indoor and outdoor air quality as well as health screenings. Silicon dual-mode resonators and oscillators for self-temperature sensing were also explored. Dual-mode thermometry exploits the inherent frequency-temperature dependence of silicon to accurately and locally measure device temperature, forming an essential building block of highly stable oscillators and sensors. Multi-axis piezo-on-Si kinetic energy harvesting (KEH) devices with integrated frequency-upconverting transducers were also introduced. Devices were micromachined on the same substrate as TPoS resonant sensors and have an individual volume in mm3, enabling applications in wireless autonomous sensor nodes. In remote locations where continuous operation may be required, TPoS energy harvesters can provide battery replacement or recharging alternatives that do not increase overall system size.

This dissertation discusses the design, simulation and characterization of process-compatible accelerometers and gyroscopes for the implementation of multi-degree-of-freedom (multi-DOF) systems. All components presented herein were designed to operate under the same vacuum-sealed environment to facilitate batch fabrication and wafer-level packaging (WLP), enabling the development of small form-factor single-die inertial measurement units (IMUs). The high-aspect-ratio poly and single-crystal silicon (HARPSS) process flow was used to co-fabricate the devices that compose the system, enabling the implementation ultra-narrow capacitive gaps (< 300 nm) in thick device-layer substrates (40 um). The presented gyroscopes were implemented as high-frequency BAW disk resonators operating in a mode-matched condition. A new technique to reduced dependencies on environmental stimuli such as temperature, vibration and shock was introduced. Novel decoupling springs were utilized to effectively isolate the gyros from their substrate, minimizing the effect that external sources of error have on offset and scale-factor. The substrate-decoupled (SD) BAW gyros were interfaced with a customized IC to achieve supreme random-vibration immunity (0.012 (deg/s)/g) and excellent rejection to shock (0.075 (deg/s)/g). With a scale factor of 800 uV/(deg/s), the complete SD-BAW gyro system attains a large full-scale range (2500 deg/s) with excellent linearity. The measured angle-random walk (ARW) of 0.36 deg/rthr and bias-instability of 10.5 deg/hr are dominated by the thermal and flicker noise of the IC, respectively. Additional measurements using external electronics show bias-instability values as low as 3.5 deg/hr. To implement the final monolithic multi-DOF IMU, accelerometers were carefully designed to operate in the same vacuum environment required for the gyroscopes. Narrow capacitive gaps were used to adjust the accelerometer squeeze-film damping (SFD) levels, preventing an under-damped response. Robust simulation techniques were developed using finite-element analysis (FEA) tools to extract accurate values of SFD, which were then match with measured results. Ultra-small single proof-mass tri-axial accelerometers with Brownian-noise as low as 30 ug/rtHz were interfaced with front-end electronics exhibiting scale-factor values in the order of 5 to 10 mV/g and cross-axis sensitivities of less than 3% before any electronic compensation.

This dissertation investigates dissipation in microelectromechanical (MEMS) resonators via detailed analysis and modeling of the energy loss mechanisms and provides a framework toward creating resonant devices with ultra-low dissipation. Fundamental mechanisms underlying acoustic energy loss are explored, the results of which are applied to understanding the losses in resonant MEMS devices. Losses in the materials, which set the ultimate limits of the achievable quality factor of the devices, are examined. Other sources of loss, which are determined by the design of the resonator, are investigated and applied to example resonant MEMS structures. The most critical of these designable loss mechanisms are thermoelastic dissipation (TED) and support (or anchor) loss of acoustic energy through the attachment of the MEMS device to its external environment. The dissipation estimation framework enables prediction of the quality factor of a MEMS resonator, which were accurate within a factor of close to 2 for high-frequency bulk acoustic wave MEMS resonators, and represents a signficant step forward by closing one of the largest outstanding problems in MEMS devices: how to predict the quality factor for a given device. Dissipation mitigation approaches developed herein address the most critical dominant loss mechanisms identified using the framework outlined above. These approaches include design of 1D phononic crystals (PCs) and novel 3D MEMS structures to trap and isolate vibration energy away from the resonator anchors, optimization of resonator geometry to suppress thermoelastic dissipation, and analysis of required levels of surface polish to reduce surface dissipation. Phononic crystals can be used to manipulate the properties of materials. In the case of the 1D PC linear acoustic bandgap (LAB) structures developed here, this manipulation arises from the formation of frequency stop bands, or bandgapwhich convert silicon from a material capable of supporting acoustic waves to a material which rejects acoustic propagation at frequencies in the bandgap. The careful design of these LAB structures is demonstrated to be able to enhance the quality factor and insertion loss of MEMS resonators without significant detrimental effects on the overall device performance.

This dissertation reports very novel solutions for the trimming and compensation of various parameters of silicon micromechanical resonators and resonator-arrays. Post-fabrication trimming of resonance frequency to a target value is facilitated by diffusing in a deposited thin metal layer into a Joule-heated silicon resonator. Up to ~400 kHz of trimming-up and trimming-down in a 100 MHz Silicon Bulk Acoustic Resonators (SiBARs) are demonstrated via gold and aluminum diffusion respectively. The dependence of the trimming range on the duration of Joule heating and value of current passed are presented and the possibility of extending the trimming range up to ~4 MHz is demonstrated. Passive temperature compensation techniques are developed to drastically reduce the temperature coefficient of frequency (TCF) of silicon resonators. The dependence of TCF on the charge carriers in silicon are extensively studied and exploited for the very first time to achieve temperature compensation. A charge surplus via degenerate doping using boron and aluminum is shown to reduce a starting TCF of -30 ppm/°C to -1.5 ppm/°C while a charge depletion effected by creating multiple pn-junctions reduces the TCF to -3 ppm/°C. Further, shear acoustic waves in silicon microresonators have also been identified to effect a TCF reduction and have been excited in a concave SiBAR (or CBAR) to exhibit a TCF that is 15 ppm/°C lesser than that of a conventional rectangular SiBAR. The study on quality factor (Q) sensitivity to the various crystallographic axis of transduction in silicon resonators show that the non-repeatability of Q across various fabrication batches are due to the minor angular misalignment of ≤ 0.5° during the photolithography processes. Preferred axes of transduction for minimal misalignment sensitivity are identified and novel low-loss resonator-array type performances are also reported from a single resonator while transduced along certain specific crystallographic axes. Details are presented on an unprecedented new technique to create and fill charge traps on the silicon resonator which allows the operation of the capacitive SiBARs without the application of any polarization voltages (Vp) for the first time, making them very attractive candidates for ultra-low-power oscillator and sensor applications. Finally, a fabrication process that integrates both the capacitive and piezoelectric actuation/sensing schemes in microresonators is developed and is shown to compensate for the parasitics in capacitive silicon resonators while maintaining their high-Q.