Spelling suggestions: "subject:"siliconcarbide"" "subject:"silicocarbide""
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Nitrogen doping in low temperature halo-carbon homoepitaxial growth of 4H-silicon carbideChindanon, Kritsa 13 December 2008 (has links)
With the low-temperature halo-carbon epitaxial growth technique developed at MSU prior to this work, use of a halo-carbon growth precursor enabled low-temperature homoepitaxial process for 4H-SiC at temperatures below 1300 °C with good quality. Investigations of the nitrogen doping dependence are reported. It has been demonstrated that the efficiency of the nitrogen incorporation may be different for different substrate orientations, with the Cace showing the higher value of doping. The Si/C ratio is known to influence the doping during the epitaxial growth due to the site-competition mechanism. The doping on the Cace showed weak dependence on the Si/C ratio. On the Siace, the doping dependence follows the site-competition trend. At high Si/C ratio, the doping trend on Siace shows strong deviation. Both of the investigated trends are suggested for use as the main process dependencies for achieving a wide range of n type doping of SiC during the low-temperature halo-carbon homoepitaxial process.
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Fatigue behavior and life prediction of a silicon carbide/titanium-24aluminum-11niobium composite under isothermal conditionsBartolotta, Paul Anthony January 1991 (has links)
No description available.
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TEM study of silicon carbide fibersNing, Xian Jie January 1992 (has links)
No description available.
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Silicon carbide: Problems in crystal growth and polytypic transformationYang, Jinwei January 1993 (has links)
No description available.
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Lattice defects in beta-silicon carbide grown on (001) silicon by CVDCheng, Tai-Tsui January 1990 (has links)
No description available.
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SILICON CARBIDE MEMS OSCILLATORPehlivanoglu, Ibrahim Engin January 2008 (has links)
No description available.
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THE MECHANICAL PROPERTIES OF AMORPHOUS SILICON CARBIDE FILMS DEPOSITED BY PECVD AND RF SPUTTERING FOR APPLICATION AS A STRUCTURAL LAYER IN MICROBRIDGE-BASED RF MEMSParro, Rocco John, III 17 May 2010 (has links)
No description available.
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SiC JFET Device ModelingTian, David 19 September 2011 (has links)
No description available.
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High Temperature Biomorphic Templates from Lignocellulosic FibersChen, Xue 22 September 2010 (has links)
No description available.
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Chemical and Behavioral Study of Commercial Polycarbosilanes for the Processing of SiC FibersPotticary, Santeri A. January 2017 (has links)
No description available.
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