Asymmetrically sandwiched ferromagnetic thin films display a large number of spin-orbit effects, including the Dzyaloschinsii-Moriya interaction (DMI), spin-orbit torques (SOT) and magnetoresistance (MR) effects. Their concurrence promises the implementation of interesting magnetic structures like skyrmions in future memory and logic devices. The complex interplay of various effects originating from the spin-orbit coupling and their dependencies on the microstructural details of the material system mandates a holistic characterization of its properties. In this PhD thesis, a comprehensive study of the spin-orbit effects in a chromium oxide/cobalt/platinum trilayer sample series is presented. The determination of the complete micromagnetic parameter set is based on a developed measurement routine that utilizes quasistatic methods. The unambiguous quantification of all relevant constants is crucial for the modeling of the details of magnetic structures in the system. In this context the necessity of a strict distinction of magnetic objects, that are stabilized by magnetostatics or the DMI, was revealed. Furthermore, a sample layout was developed to allow for the simultaneous quantification of the magnitudes of SOTs and MR effects from nonlinear magnetotransport measurements. In conjunction with a structural characterization, the dominating dependence of the effect magnitudes on microstructural details of the systems is concluded. Precisely characterized systems establish a solid groundwork for further investigations that are needed for viable skyrmion-based devices.:1 Introduction 2 Fundamentals 2.1 Towards new devices 2.2 Spin-orbit effects 2.2.1 Spin-current sources 2.2.2 Magnetoresistanceeffects 2.2.3 Spin-orbit torques 2.2.4 Harmonic analysis 2.3 Micromagnetic model 2.3.1 Dzyaloshinskii-Moriya interaction (DMI) 2.3.2 Consequences of the DMI for magnetic structures 2.3.3 Interface-induced DMI in asymmetrically stacked ferromagnets 2.3.4 Quantification of the interface-induced DMI 2.3.5 Levy-Fert three-site model including roughness 3 The CrOx/Co/Pt sample system 3.1 Experimental techniques 3.2 Structural characterization 4 Complete micromagnetic characterization 4.1 Magnetometry 4.1.1 Static investigation 4.1.2 Ferromagnetic resonance 4.2 DMI quantification 4.2.1 Field-driven domain wall creep motion 4.2.2 Asymmetric domain growth 4.2.3 Winding pair stability 4.3 Determination of the exchange parameter 4.3.1 Generation of circular magnetic objects 4.3.2 Homochiral magnetic bubble domains 4.4 Results 5 Magnetotransport measurements 5.1 Measurement setup 5.2 Magnetoresistance effects 5.3 Spin-orbit torque quantification 5.4 Results 6 Discussion 6.1 Structural predomination of the DMI strength 6.2 Ultra-thin limit exchange parameter reduction 6.3 Magnetotransport properties 6.4 Magneticstructures in //CrOx/Co/Pttrilayers 7 Conclusion and Outlook A Appendix A.1 Calculation of the skyrmion diameter A.2 Micromagnetic simulation of the winding pair stability Bibliography Acknowledgements

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Mémoire numérisé par la Direction des bibliothèques de l'Université de Montréal.

<div>Over the last decade, Dirac matter has become one of the most prominent fields of research in contemporary material science due to the incredibly rich physics of the Dirac equation. Notable examples are the Dirac cones in graphene, Weyl points in TaAs, and gapless edge states in Bi₂Te₃. These unique phases of matter are intimately related to the topological structure of Dirac fermions. However, it remains an open question if the topological structure of Maxwell's equations predicts yet new phases of matter. This thesis will conclusively answer this question.</div><div><br></div><div>Topological electrodynamics is concerned with the geometry of electromagnetic waves in condensed matter. At the microscopic level, photons couple to the dipole-carrying excitations of a material, such as plasmons and excitons, which hybridize to form new normal modes of the system. The interaction between these bosonic oscillators is the origin of temporal and spatial dispersion in optical response functions like the conductivity tensor. Our main achievement is motivating a global interpretation of these response functions, over all frequencies and wavevectors. This theory led us to the conclusion that there are topological invariants associated with the conductivity tensor itself. In this thesis, we show exactly how to calculate these electromagnetic invariants, in both continuum and lattice theories, to identify unique Maxwellian phases of matter. Magnetohydrodynamic electron fluids in strongly-correlated 2D materials like graphene are the first candidates of this new class of topological phase. The fundamental physical mechanism that gives rise to a topological electromagnetic classification is Hall viscosity which adds a nonlocal component to the Hall conductivity. To study the topological electrodynamics, we propose viscous Maxwell-Chern-Simons theory -- a Lagrangian framework that naturally generates the equations of motion, nonlocal Hall response and the boundary conditions. We demonstrate that nonlocal Hall conductivity is the spin-1 photonic equivalent of dispersive mass and induces precession of bulk photonic skyrmions. Nontrivial photonic skyrmions are associated with Dirac monopoles in the bulk momentum space and a singular Berry gauge. A singular gauge occurs when the photonic mass changes sign. Remarkably, the boundary of this medium supports gapless chiral edge states that are spin-1 helically-quantized and satisfy open boundary conditions.</div>

Manganese-based Heusler compounds display intriguing fundamental physical properties, determined by the delicate balance of magnetic interactions that give rise to real and reciprocal-space topology, sparking the interest in their potential application in the spin-based technology of the future. In this thesis, a thorough study of thin films of two Mn-based Heusler compounds, the hexagonal MnPtGa and inverse tetragonal Mn2Rh(1-x)Ir(x)Sn (0 < x < 0.4) system, was performed. The observation of Néel-type skyrmions in single-crystalline MnPtGa motivated our interest in the growth and characterization of thin films of this compound. The films were deposited by magnetron sputtering on (0001)-Al2O3 single crystalline substrates, achieving the epitaxial growth of the Ni2In-type hexagonal crystal structure (P6_3/mmc space group, no. 194). Two thermally-induced magnetic transitions were identified in MnPtGa thin films: below the ordering temperature (T_C=273 K) the system becomes ferromagnetic, followed by a spin-reorientation transition at T_sr=160 K, adopting a spin-canted magnetic structure. Resorting to single-crystal neutron diffraction (SCND), we were able to resolve the magnetic ground state of our MnPtGa thin films. The Mn magnetic moments were found to tilt 20 degrees away from the c-axis, forming a commensurate magnetic structure with a ferromagnetic component along the crystallographic c-axis and a staggered antiferromagnetic one in the basal plane. This further demonstrated the applicability of a bulk technique, such as SCND, to the study of magnetic structures in thin films. Additionally, the perpendicular magnetic anisotropy (PMA) in the system was determined by magnetometry technique. Electrical magnetotransport measurements were performed in a thickness series of MnPtGa thin films. A non-monotonous anomalous Hall conductivity (AHC) was observed, whose intrinsic Berry-curvature origin was elucidated by means of first-principle calculations. We further observed by magnetic force microscopy technique the nucleation of irregular magnetic bubbles under the application of a magnetic field. We tentatively link their appearance to the onset of an additional electron scattering mechanism contributing to the transverse resistivity. In the second part of this thesis, the inverse tetragonal Mn2Rh(1-x)Ir(x)Sn (0 < x < 0.4) system was investigated. The films were grown on MgO(100) single crystalline substrates, promoting the epitaxial growth of the tetragonal structure (I-4m2 space group, no. 119). We primarily focused on the impact of the systematic substitution of iridium on the structural, magnetic and electrical (magneto)transport properties of the system. A compression of the basal lattice parameters and elongation of the c-axis, accompanied by larger crystallographic disorder, was observed as the Ir content (x) increased, altering the Mn-Mn exchange interactions and therefore the magnetic properties of the compound. Mn2RhSn have two thermally-induced magnetic transitions: first, to a collinear ferrimagnetic state below the Curie temperature (T_C=280 K), followed by a spin-reorientation transition at T_sr=80 K to a noncollinear state, determined by two inequivalent Mn sublattices. A reduction of both T_C and T_sr was observed, as well as a tendency towards a hard-axis ferromagnet and therefore larger PMA as the Ir content of the films was increased. Additionally, a reduction of the saturation magnetization suggest a change of the magnitude of the spin canting upon Ir-substitution. The electrical magnetotransport properties of the Mn2Rh(1-x)Ir(x)Sn (0 < x < 0.4) thin films were acquired and analyzed in a wide temperature and magnetic field range. A strongly temperature and composition dependent non-monotonous AHC was found, suggesting two regimes in the electronic transport: (i) a nearly x-independent regime dominated by intrinsic Berry-curvature and (ii) a strongly x-dependent regime suggesting a more relevant role from extrinsic mechanisms contributing to the AHC. On the other hand, the Mn2Rh(0.95)Ir(0.05)Sn bulk system is known to host magnetic skyrmion and antiskyrmion phases. We indirectly assessed the impact of the systematic Ir-substitution on the (anti)skyrmionic phases through the analysis of the sign of the topological Hall effect in our thin films. A tendency towards the suppression of the low-T skyrmion phase stabilized by magnetic dipole-dipole interaction, and subsistence of the high-T antiskyrmion phase in Mn2Rh(1-x)Ir(x)Sn thin films was found as x > 0.2, which can be interpreted as a change of magnitude of the anisotropic DMI in this tetragonal D_2d system upon Ir-substitution. We have thus demonstrated that the magnetic and topological properties of the Mn2Rh(1-x)Ir(x)Sn system can be tailored upon chemical substitution, showing a strongly intertwined relation between composition, crystal and electronic structure, with the emergence of exotic magnetic phases, ultimately reflected in their electrical transport signatures.:Abstract iii Abbreviations iv Symbols vi Preface xii 1 Fundamentals 1 1.1 Noncollinear magnetism . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1.1 Magnetic interactions in solids . . . . . . . . . . . . . . . . . . . 2 1.1.1.1 Exchange interaction . . . . . . . . . . . . . . . . . . . 2 1.1.1.2 Dzyaloshinsky-Moriya interaction . . . . . . . . . . . . 3 1.1.1.3 Magnetic anisotropy . . . . . . . . . . . . . . . . . . . 4 1.1.1.4 Magnetic dipolar interaction . . . . . . . . . . . . . . . 5 1.1.2 Spin-reorientation transition . . . . . . . . . . . . . . . . . . . . 5 1.1.3 Magnetic skyrmions and antiskyrmions . . . . . . . . . . . . . . 6 1.1.3.1 Antiskyrmions in Heusler compounds . . . . . . . . . . 8 1.2 Magnetic Heusler compounds . . . . . . . . . . . . . . . . . . . . . . . 9 1.2.1 Cubic crystal structure . . . . . . . . . . . . . . . . . . . . . . . 10 1.2.2 Distorted crystal structures . . . . . . . . . . . . . . . . . . . . 10 1.2.2.1 Tetragonal Heusler compounds . . . . . . . . . . . . . 11 1.2.2.2 Hexagonal Heusler compounds . . . . . . . . . . . . . 11 1.3 Charge and spin transport in ferromagnets . . . . . . . . . . . . . . . . 13 1.3.1 The two-current model . . . . . . . . . . . . . . . . . . . . . . . 13 1.3.2 The Hall effect . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 1.3.2.1 Anomalous Hall effect . . . . . . . . . . . . . . . . . . 15 1.3.2.2 Topological Hall effect . . . . . . . . . . . . . . . . . . 17 1.4 Neutron scattering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 1.4.1 Thermal Neutrons . . . . . . . . . . . . . . . . . . . . . . . . . 18 1.4.1.1 Scattering cross sections . . . . . . . . . . . . . . . . . 19 1.4.1.2 The four-circle diffractometer . . . . . . . . . . . . . . 23 xv 1.4.2 Magnetic neutron scattering . . . . . . . . . . . . . . . . . . . . 24 2 Experimental Techniques 29 2.1 Magnetron sputtering . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 2.1.1 Thin films growth modes . . . . . . . . . . . . . . . . . . . . . . 32 2.1.2 Thin films microstructure . . . . . . . . . . . . . . . . . . . . . 33 2.2 X-ray characterization of thin films . . . . . . . . . . . . . . . . . . . . 34 2.2.1 Geometry of the X-ray diffractometer . . . . . . . . . . . . . . . 35 2.2.2 Radial θ-2θ scan . . . . . . . . . . . . . . . . . . . . . . . . . . 35 2.2.3 ϕ -scans . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 2.2.4 Rocking curves (ω-scans) . . . . . . . . . . . . . . . . . . . . . . 36 2.2.5 X-ray reflectivity (XRR) . . . . . . . . . . . . . . . . . . . . . . 37 2.3 Composition analysis: energy dispersive X-ray spectroscopy (EDS) . . . 38 2.4 Surface characterization: atomic and magnetic force microscopy . . . . 38 2.5 D10 thermal neutron diffractometer . . . . . . . . . . . . . . . . . . . . 39 2.6 SQUID-VSM magnetometry . . . . . . . . . . . . . . . . . . . . . . . . 40 2.7 Electrical (magneto-)transport measurements . . . . . . . . . . . . . . 41 3 Noncollinear magnetism in MnPtGa epitaxial thin films 43 3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 3.2 MnPtGa thin films: growth and characterization . . . . . . . . . . . . . 45 3.2.1 Growth conditions . . . . . . . . . . . . . . . . . . . . . . . . . 45 3.2.2 Crystal structure . . . . . . . . . . . . . . . . . . . . . . . . . . 46 3.3 Magnetic properties of MnPtGa thin films . . . . . . . . . . . . . . . . 49 3.3.1 Thermal evolution of the magnetic structure . . . . . . . . . . . 49 3.3.2 Field dependent magnetization . . . . . . . . . . . . . . . . . . 50 3.3.3 Single-crystal neutron diffraction in MnPtGa thin films . . . . . 52 3.3.3.1 Ferromagnetic phase . . . . . . . . . . . . . . . . . . . 54 3.3.3.2 Noncollinear phase . . . . . . . . . . . . . . . . . . . . 55 3.4 Electronic band structure of h-MnPtGa . . . . . . . . . . . . . . . . . . 57 3.5 Electrical magnetotransport properties of MnPtGa thin films . . . . . . 59 3.5.1 Zero field longitudinal resistivity . . . . . . . . . . . . . . . . . . 60 3.5.2 Magnetoresistance . . . . . . . . . . . . . . . . . . . . . . . . . 62 3.5.3 Magnetic transitions under a magnetic field . . . . . . . . . . . 64 3.6 Intrinsic origin of the anomalous Hall effect . . . . . . . . . . . . . . . . 65 3.6.1 Scaling of the anomalous Hall conductivity vs. σxx . . . . . . . 68 3.7 Spin textures in MnPtGa thin films . . . . . . . . . . . . . . . . . . . . 73 3.8 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 4 Tuning the magnetic and topological properties of Mn2Rh1−xIrxSn epitaxial thin films 83 4.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 4.2 Growth and characterization of Mn2Rh1−xIrxSn thin films . . . . . . . 86 4.2.1 Growth conditions and Ir substitution . . . . . . . . . . . . . . 86 4.2.2 Crystal structure of Mn2Rh1−xIrxSn . . . . . . . . . . . . . . . . 87 4.3 Tuning the magnetic properties of the Mn2Rh1−xIrxSn system . . . . . 91 xvi 4.3.1 Thermal magnetic transitions . . . . . . . . . . . . . . . . . . . 91 4.3.2 Increasing the magnetic anisotropy under Ir-substitution . . . . 92 4.4 Electrical (magneto-)transport properties of Mn2Rh1−xIrxSn thin films 94 4.4.1 Zero-field longitudinal resistivity and spin reorientation transition 94 4.4.2 Magnetoresistance . . . . . . . . . . . . . . . . . . . . . . . . . 95 4.4.3 Hall effects: from ordinary to anomalous & topological . . . . . 96 4.4.3.1 Ordinary Hall effect . . . . . . . . . . . . . . . . . . . 97 4.4.3.2 Anomalous Hall effect . . . . . . . . . . . . . . . . . . 98 4.4.3.3 Competing mechanisms in the AHC of the Mn2Rh1−xIrxSn system . . . . . . . . . . . . . . . . . . . . . . . . . . . 99 4.4.3.4 Scaling of the AHC with the magnetization . . . . . . 101 4.4.3.5 Topological Hall effect . . . . . . . . . . . . . . . . . . 102 4.5 Tuning the (Anti-)Skyrmion phases . . . . . . . . . . . . . . . . . . . . 106 4.6 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 5 Conclusions & Outlook 111 List of Figures 117 List of Tables 120 List of Publications 124 Aknowledgements 124 Bibliography 127 Eigenständigkeitserklärung 147

MnSi(111) films were grown on Si(111) substrates by solid phase epitaxy (SPE) and molecular beam epitaxy (MBE) to determine their magnetic structures. A lattice mismatch of -3.1% causes an in-plane tensile strain in the film, which is partially relaxed by misfit dislocations. A correlation between the thickness dependence of the Curie temperature (TC) and strain is hypothesized to be due to the presence of interstitial defects. The in-plane tensile strain leads to an increase in the unit cell volume that results in an increased TC as large as TC = 45 K compared to TC = 29.5 K for bulk MnSi crystals. The epitaxially induced tensile stress in the MnSi thin films creates an easy-plane uniaxial anisotropy. The magnetoelastic coefficient was obtained from superconducting quantum interference device (SQUID) magnetometry measurements combined with transmission electron microscopy (TEM) and x-ray diffraction (XRD) data. The experimental value agrees with the coefficient determined from density functional calculations, which supports the conclusion that the uniaxial anisotropy originates from the magnetoelastic coupling. Interfacial roughness obscured the magnetic structure of the SPE films, which motivated the search for a better method of film growth. MBE grown films displayed much lower interfacial roughness that enabled a determination of the magnetic structure using SQUID and polarized neutron reflectometry (PNR). Out-of-plane magnetic field measurements on MBE grown MnSi(111) thin films on Si(111) substrates show the formation of a helical conical phase with a wavelength of 2?/Q = 13.9 ± 0.1 nm. The presence of both left-handed and right-handed magnetic chiralities is found to be due to the existence of inversion domains that result from the non-centrosymmetric crystal structure of MnSi. The magnetic frustration created at the domain boundaries explains an observed glassy behaviour in the magnetic response of the films. PNR and SQUID measurements of MnSi thin films performed in an in-plane magnetic field show a complex magnetic behaviour. Experimental results combined with theoretical results obtained from a Dzyaloshinskii model with an added easy-plane uniaxial anisotropy reveals the existence of numerous magnetic modulated states that do not exist in bulk MnSi. It is demonstrated in this thesis that modulated chiral magnetic states can be investigated with epitaxially grown MnSi(111) thin films on insulating Si substrates, which offers opportunities to investigate spin-dependent transport in chiral magnetic heterostructures based on this system.