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New electron beam scanning techniques for microstrip antennasEvans, Gareth David January 1991 (has links)
No description available.
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The high electron mobility transistorMcQuaid, Seamus A. January 1990 (has links)
No description available.
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Ion scattering analysis of low energy ion bombarded GaAS(001)Orrman-Rossiter, Kevin G. January 1989 (has links)
No description available.
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Highly conducting molecular crystalsWhitehead, Roger James January 1989 (has links)
No description available.
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Aspects of single crystal and thin film high field electroluminescenceSwift, Michael Joseph Robert January 1989 (has links)
No description available.
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Development of electron spin resonance for bimolecular applicationsCapstick, Myles Hird January 1991 (has links)
No description available.
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SYSTEMATIC MODELING OF SEVERAL SOLID STATE DEVICESLindholm, F. A., 1936- January 1963 (has links)
No description available.
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Fabrication process and characteristics of a silicon strip detectorMills, David J. January 1985 (has links)
The current and possible uses of semiconductor solid state detectors in nuclear physics are briefly discussed. The theory of solid state detectors is discussed with emphasis on the silicon PIN diode detector.
A fabrication process for silicon surface barrier position sensitive solid state detectors has been developed at UBC based on the work of J.B.A. England. A fabrication process recipe is included.
A prototype surface barrier detector system has been built and tested at UBC and TRIUMF using this process. The device has 1 mm position resolution in one direction, an active area of 40 mm in diameter and a mass thickness of 55 mg/cm². The measured efficiency for 50 MeV pions is 70% and expected rate capability is in excess if 1 MHz per strip. The detector efficiency is limited by a marginal signal-to-noise ratio. / Science, Faculty of / Physics and Astronomy, Department of / Graduate
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A counterpulsed, solid-state opening switchGraham, Michael C. 06 1900 (has links)
Railguns have great potential in military roles; however, they currently lack a fieldable power supply. Recent advances in the state of low voltage power storage devices may enable practical Pulse Forming Inductive Network power supplies to be developed if a suitable current interruption device is developed. A solid-state device in a counterpulsed opening switch configuration is a possible solution. A demonstration counterpulsed solid-state opening switch was constructed and successfully tested. This circuit consisted of Silicon Controlled Rectifier components, which can nominally only turn on current. The counterpulsed configuration allowed them to function as opening switches and to do so at much higher current relative to their specifications. We demonstrated current interruption at up to 1 kA of peak current. This demonstration system validates the counterpulsing concept and prepares for the construction of a modular, 250 kJ system.
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A counterpulsed, solid-state opening switch /Graham, Michael C. January 2005 (has links) (PDF)
Thesis (M.S. in Physics)--Naval Postgraduate School, June 2005. / Thesis Advisor(s): William B. Maier II, Richard Harkins. Includes bibliographical references (p. 29). Also available online.
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