In this thesis point defects in semiconductors are studied by electronic structure calculations. Results are presented for the stability and equilibrium concentrations of native defects in GaP, InP, InAs, and InSb, for the entire range of doping conditions and stoichiometry. The native defects are also studied on the (110) surfaces of InP, InAs, and InSb. Comparing the relative stability at the surface and in the bulk, it is concluded that the defects have a tendency to migrate to the surface. It is found that the cation vacancy is not stable, but decomposes into an anion antisite-anion vacancy complex. The surface charge accumulation in InAs is explained by complementary intrinsic doping by native defects and extrinsic doping by residual hydrogen. A technical investigation of the supercell treatment of defects is performed, testing existing correction schemes and suggesting a more reliable alternative. It is shown that the defect level of [2VCu-IIICu] in the solarcell-material CuIn1-xGaxSe2 leads to a smaller band gap of the ordered defect γ-phase, which possibly explains why the maximal efficiency for CuIn1-xGaxSe2 has been found for x=0.3 and not for x=0.6, as expected from the band gap of the α-phase. It is found that Zn diffuses via the kick-out mechanism in InP and GaP with activation energies of 1.60 eV and 2.49 eV, respectively. Explanations are found for the tendency of Zn to accumulate at pn-junctions in InP and to why a relatively low fraction of Zn is found on substitutional sites in InP. Finally, it is shown that the equilibrium solubility of dopants in semiconductors can be increased significantly by strategic alloying. This is shown to be due to the local stress in the material, and the solubility in an alloy can in fact be much higher than in either of the constituting elements. The equilibrium solubility of Zn in Ga0.9In0.1P is for example five orders of magnitude larger than in GaP or InP.

No description available.

Fundação de Amparo a Pesquisa do Estado de Minas Gerais / In this work, Zn1-xAxTe (A = Mn, Co) diluted magnetic semiconductors (DMS) nanocrystal (NCs) were successfully grown in the P2O5 ZnO Al2O3 BaO PbO glass system synthesized by the method of Fusion-Nucleation, after subjecting to appropriate thermal annealing. Various experimental techniques were used in this study in order to get a comprehensive understanding of the optical, morphological, structural and magnetic properties these NCs. Transmission electron microscopy (TEM) and atomic force microscopy (AFM) images revealed the size of both of Zn1-xMnxTe and Zn1-xCoxTe NCs. From the vibrating sample magnetometer (VSM) technique, there was growth behavior of magnetization and magnetic susceptibility as a function of the Mn concentration in the samples containing Zn1-xMnxTe NCs. At lower Mn concentrations, the sp electrons of ZnTe host semiconductor interact with the d electrons of Mn2+ ions, resulting in the sp-d exchange interaction, which causes a small increase in susceptibility. At higher Mn concentrations, the d-d exchange interaction between Mn atoms dominates over the sp-d exchange interaction, resulting in an abrupt increase in susceptibility. The EPR spectra, in addition to prove the results exhibited the well-known sextet hyperfine lines of Mn2+ ions, since samples with low Mn concentrations revealed the presence of Mn2+ ions within and near the surface of the ZnTe NCs. From the optical absorption spectra (OA) and photoluminescence (PL), analyzed on the basis of crystal field theory (CFT) as well as of the diffraction X-ray (XRD), Raman scattering (RS) and electron microscopy transmission (TEM) techniques, the substitutional incorporation of Mn2+ ions was confirmed up to its solubility limit (x = 0.100) ZnTe NCs. Above this concentration, can observe the formation of manganese oxide NCs such as MnO and MnO2, since the nucleation rate for the formation of these NCs is greater than that of Zn1-xMnxTe NCs, at high concentrations. Furthermore, from the PL spectra, it was found that it is possible to tune the emission of energy related to transition 4T1(4G) → 6A1(6S) of Mn2+ ions, of the spectral orange region to the near infrared, depending on Mn concentration. This is possible due to the variation of the local crystal field, where these ions are inserted. From the OA spectra, analyzed on the basis of CFT, it showed that Co2+ ions are substitutionally incorporated in tetrahedral sites of ZnTe NCs, due to its characteristics transitions in visible and near infrared spectral region. This evidence has been enhanced from MFM images, since NCs doped with magnetic ions, magnetically respond when induced by the magnetization of the probe. / Neste trabalho, nanocristais semicondutores magnéticos diluídos (SMD) de Zn1-xAxTe (A = Mn; Co) foram crescidos com sucesso no sistema vítreo P2O5 ZnO Al2O3 BaO PbO, sintetizado pelo método de Fusão-Nucleação, após submetê-lo a tratamento térmico apropriado. Várias técnicas experimentais foram utilizadas neste estudo a fim de obter um entendimento compreensivo das propriedades ópticas, morfológicas, estruturais e magnéticas desses NCs. Imagens de microscopia eletrônica de transmissão (MET) e microscopia de força atômica (MFA) revelaram o tamanho tanto de NCs de Zn1-xMnxTe quanto de Zn1-xCoxTe. A partir da técnica de magnetometria de amostra vibrante (MAV), verificou-se o crescimento da magnetização e o comportamento da susceptibilidade magnética, em função da concentração de Mn, em amostras contendo NCs de Zn1-xMnxTe. Em baixas concentrações de Mn, os elétrons sp do semicondutor hospedeiro ZnTe, interagem com os elétrons d dos íons Mn2+, resultando na interação de troca sp-d, que provoca um pequeno aumento na susceptibilidade magnética. Já, em concentrações mais elevadas de Mn, a interação de troca d-d entre átomos de Mn domina a interação de troca sp-d, o que resulta em um aumento abrupto da susceptibilidade. Os espectros RPE, além de comprovar esses resultados, exibiram o bem conhecido sexteto de linhas hiperfinas de íons Mn2+, uma vez que amostras com baixas concentrações de Mn revelaram a presença de íons Mn2+ no interior e próximos à superfície dos NCs de ZnTe. A partir dos espectros de absorção óptica (AO) e fotoluminescência (FL), analisados com base na teoria do campo cristalino (TCC), bem como das técnicas de difração de raios-X (DRX), espalhamento Raman (ER) e microscopia eletrônica de transmissão (MET), confirmou-se a incorporação substitucional de íons Mn2+ até seu limite de solubilidade nominal (x = 0,100) em NCs de ZnTe. Acima dessa concentração, observa-se a formação de NCs de óxido de manganês, tais como MnO e MnO2, uma vez que a taxa de nucleação para a formação desses NCs é maior que a de NCs de Zn1-xMnxTe, em altas concentrações. Além disso, a partir dos espectros FL, verificou-se que é possível sintonizar a energia de emissão relacionada à transição 4T1(4G) → 6A1(6S) de íons Mn2+, da região espectral laranja ao infravermelho próximo, em função da concentração de Mn. Isso é possível devido à variação do campo cristalino local, onde esses íons estão inseridos. A partir dos espectros AO, analisados com base na TCC, evidenciou-se que íons Co2+ são incorporados substitucionalmente em sítios tetraédricos de NCs de ZnTe, devido às suas transições características na região espectral do visível e infravermelho próximo. Essa evidência foi reforçada a partir de imagens de MFM, uma vez que os NCs, dopados com íons magnéticos, respondem magneticamente quando induzidos pela magnetização da sonda. / Doutor em Física