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In this thesis, we have set up a SiO2 sputter system. The system includes sputter gun, RF power supply, RF power controller, turbo pump, quick access door, cooling water tubes, gas lines, electric circuits etc. We applied sputter techniques for quantum well intermixing (QWI) process. We can adjust the pressure, gas, RF power etc. of the sputter system to fit the best QWI conditions and then sputter a SiO2 film on the samples. The samples with multiple quantum wells were grown by our team members using molecular beam epitaxy system. After SiO2 film deposition, the samples were annealed by Rapid Thermal Process. The annealing temperatures are about 650¢J-750¢J. Following the thermal annealing, room-temperature PL measurements were used to study the blue shift and intensity change after QWI process. After our hard working, we had fixed many problems of sputter system. We have obtained useful data through many QWI experiments. Our results are listed as follows : PL intensity : We use RF power = 100W, sputter time = 5 min., annealing temperature = 675¢J, annealing time = 30 sec. PL intensity has been enhanced by 25 times. Blue shift : there is no clear blue shift.

In this thesis, we have set up a SiO2 sputter system. We applied sputter techniques for quantum well intermixing (QWI) process to increase the bandgap of the quantum well structure. The samples with multiple quantum wells were grown by our team members using molecular beam epitaxy system, and the MQW structure were grown by MOCVD. Before sputtering, some samples will use ICP to enhance the vacancy on the surface. First, we will sputter SiO2 on the surface of sample. After SiO2 film deposition, the samples were annealed by Rapid Thermal Process. And ordinary annealing were about 700¢J~800¢J. A later period, the annealing temperatures will be above 850¢J. Room-temperature PL (Photoluminescence) measurements were used to study the blue shift and intensity change after QWI process. And we will do the mesa process to measure the characteristic of optoelectronics. If the conditions are RF power = 100W, sputter time = 30 min, ICP enhance 250W for 2 min, annealing temperature = 825¢J, annealing time = 60 sec. The PL signal have a blue shift of 64nm(wavelength from 1506nm to 1444nm).When annealing temperature =700¢J, and annealing time = 60 sec, we have a blue shift of 12nm(wavelength from 1572nm to 1560nm) on the C116 sample. We do the mesa process on the MQW which contain P and it have a large blue shift. After the process, we success to compare the different between EL and Photocurrent. But the structure of samples which certain Al do not have a apparent blue shift. And the annealing temperature is too large, samples will be damaged. We think that the reason have relation to materials of the sample.

Abstract In this study, ZrN films were deposited on silicon wafer¡Bcopper and aluminum sheets by reactive sputtering of Zr target at room temperature in a mixed N2-Ar atmosphere with N2 gas flow rates of 5 and 6 sccm. Films of ZrN about 1£gm thick were annealed at various temperatures in order to study the grain growth and the inter-diffusion of atoms. Electron probe X-ray microanalyzer¡]EPMA¡^ showed that the as-deposited ZrN films were stoichiometric. The ring patterns of electron diffraction in transmission electron microscope (TEM) indicated that only ZrN was present without any Zr metal. The grain size of ZrN showed no apparent change after annealing at 900¢J and 1000¢J, but showed that¡]200¡^ orientation is preferred to ¡]111¡^orientation. No Zr-Si compound were found at the ZrN/Si interface after annealing. It was revealed that the ZrN grain size in the ZrN/Si interface was about 5¡ã15 nm, then broadened to columnar structure of 20¡ã50nm in diameter away from the interface. The grain size of ZrN on Cu substrate was 3¡ã15 nm at the ZrN/Cu interface and leave away from the interface was 10¡ã80 nm. No Cu-Zr compound was found at the interface after annealing at 650¢J for 1 hour.

Abstract We have applied PID and IFVP techniques to modify semiconductor bandgap in quantum well and quantum dot to achieve quantum well intermixing (QWI) and quantum dot intermixing (QDI). In quantum well intermixing experiment, we combine inductively coupled plasma reactive ion etching (ICP-RIE) and sputtering 300nm SiO2 to induce defects. And then, after high temperature annealing by RTA, we observed the results by using PL measurement. The samples used in this study were grown by molecular beam epitaxy(MBE) and consists of triple In0.53Ga0.47As/In0.53Ga0.26Al0.21As quantum wells. We used Ar+ bombardment on samples by ICP-RIE for 5 minutes, and then sputtered a 300nm SiO2 capping layer upon the samples. Finally the sample was annealed at 800¢J for 1 minutes. After the process, we got 150nm blue-shift (1575~1425nm) by measurement PL spectrum and applied XRD fitting to simulate 140nm blue-shift (1580~1440nm).On the same process step, we increased ICP-RIE bombardment time to 7 minutes thus we observed largest 269nm blue-shift from PL spectrum. InAs/In0.52Al0.48As,In0.95Al0.05As/In0.52Al0.48As,and In0.95Ga0.05As/In0.52Al0.48As quantum dot structures were grown by MBE. In0.95Ga0.05As/In0.52Al0.48As quantum dot structure has larger blue-shift by sputtering 300nm SiO2 and annealing at high temperature by RTA. We got 282nm blue-shift annealing at 800¢J for In0.95Ga0.05As/In0.52Al0.48As quantum dot structure. Furthermore, we got largest 366nm blue-shift when we etched the thickness of capping layer and annealed at 800¢J.

Sputter deposition is one of the vapour quenching methods used to produce alloying compounds in thin film form. The alloying compounds produced by this method have a chemically homogeneous, non-equilibrium structure which is dill'erent from that of alloys produced by solid quenching, liquid quenching, or mechanical alloying methods. In the present investigation the Fe 1-:x.A1x alloy thin films were prepared using multisource magnetron sputtering. The samples were deposited onto a water cooled substrate and their thickness was kept constant at t- 300nm. To investigate the effect of the deposition parameters on the properties of the films, the samples were deposited at various argon gas pressures PAr I, 3, or 4 mtorr. The effect of gas pressure is consistent with the thermalization of the deposited material by collisions with gas atoms in the chamber. The composition range of the samples varied from pure iron to pure aluminium. The composition, structure and morphology of the films was obtained using Transmission Electron Microscopy (TEM). X-ray diffraction patterns were also used to obtain the structure of the films. Structure analysis showed that a bcc crystalline structure was obtained in samples of composition range x= 0 to - 50%, an amorphous structure in samples of composition range x- 55% to - 83%, and a fcc crystalline structure in samples of composition range x- 85% to 100%. These composition ranges are affected by altering the deposition gas pressure. The morphology of the deposited films was observed to be affected by the deposition gas pressure. The samples deposited at low gas pressure Par=1 mtorr consist of a fibrous structure with densely packed boundaries, while the samples deposited at high gas pressure Par=4 mtorr consist of columnar structures separated by open boundaries. Room temperature resistivity measurements show a drop in resistivity in the composition range x- 30% to 50%. This drop is thought to be due to the formation of chemically ordered Fe3Al and FeAI compounds. Also the resistivity increases with increasing argon gas pressure. The effect of altering the argon gas pressure is to change the morphology of these alloys, and this has a significant effect on the magnetic properties. The effect of annealing on the magnetisation and morphology was also studied in the samples. A low temperature resistivity measurement system was constructed. A closed cycle helium refrigerator, which provided a working temperature range of T= l5°K to 3000K was used for the cooling process. The resistivity measurements revealed three distinct characteristics dependent on composition :- 1. x= 0 to 46%: The samples in this range exhibit a metallic behaviour, with the samples in the composition range x= 27% to 46% showing a resistivity minimum at low temperature which is thought to be due to spin glass formation. 2. x= 48% to 83%: These samples have a semiconductor or metallic glass-like behaviour. 3. x= 85% to 100%: These samples show a metallic behaviour. The above properties are associated with the change in the structure of the fiIrns as the composition varies. A computer controlled AC susceptometer was designed and constructed to measure the AC susceptibility of the samples in the temperature range T= 20 OK to T= 300 OK. A closed cycle helium refrigerator was used to provide the cooling process. The AC susceptibility measurements for the samples with resistivity minima show a sharp peak at low temperature which confirms the presence of spin glass in these samples at low temperature. The results of magnetic and transport properties can be related to the structure and morphology of the filrns. The results have been compared with those obtained from bulk samples with the same composition.

Cuprous oxide (Cu2O) was first investigated in the 1920s as a semiconductor material with Eg~2.17 eV. It is ideal for applications in solar cells, electrochromic devices, oxygen and humidity sensors because of its high optical absorption coefficient, non-toxic nature, abundant availability and low cost for production. Many groups have tried different ways to grow the cuprous oxide by, for instance, sputtering, CVD, PLD, MBE, and electro-deposition etc. Among them, the sputtering method is probably the most cost-effective and easy to operate. In this work, the cuprous oxide thin films were grown on R-Al2O3 and (110)-MgO substrates by DC reactive magnetron sputtering. Thin films grown at different temperatures under various oxygen partial pressures were studied by X-ray diffraction (XRD) to test their structural perfections. Samples with the Cu2O on Al2O3(1012) and MgO(110) were studied via measurement of cathodoluminescence(CL) spectroscopy, photoluminescence (PL) spectroscopy, transmission spectroscopy and magneto transport behaviors. The correlation of growth condition and physical properties are discussed.

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Transparent InO (Indium oxide) thin-film transistors fabricated by reactive ratio frequency (rf) magnetron sputtering at room temperature were demonstrated on glass and plastic substrates. The resistivity, transmittance, X-ray diffraction pattern, and surface morphology of the films prepared at a 50% oxygen partial pressure were investigated, the resistivity and the average transmittance of the films were 4.2¡Ñ104 £[-cm and 87 %, respectively. In addition, Indium tin oxide (ITO) and silicon nitride (SiNX) thin films were used as the electrode and gate insulator. The resistivity and the average transmittance of ITO electrodes were 7¡Ñ10-4 £[-cm and 85%. On the other hand, the maximum leakage current of less than 10-9A/cm2 was obtained for the SiNX layer at an electric field of 1 MV/cm. For the InO TFT on glass substrate with 6 £gm channel length and 20 £gm channel width, the measured saturation mobility, threshold voltage, on/off ratio and subthreshold swing are 9.39V-1s-1, 1.5V, 2.2¡Ñ107and 0.5 V/decade. For the TFTs prepared on plastic substrate, the measured saturation mobility, threshold voltage, on/off ratio and subthreshold swing are 8.19V-1s-1, 1.83V, 1.43.¡Ñ106and 0.8 V/decade, respectively.