More efficient and cheaper solar cells are necessary if photovoltaics are to play a major rolein the field of sustainable power generation. Copper indium gallium selenide (CIGSe) is one of the best suited materials for thin film solar cell absorbers. One production method for thin film manufacturing is sputtering, a fast, high-yield, all-dry process that can be performed in an unbroken vacuum chain. The sputter target, which provides the raw material for this process, is an important link to obtain high quality films. Furthermore, the targets stands for the single largest cost in solar cells produced through the method. Hence, driving down the target production costs while maintaining or increasing quality is a vital route towards competitive photovoltaic power generation. In this project, compound CIGSe sputter target material was produced via mechanical alloying of elemental raw materials, followed by hot pressing. The resulting material obtained a relative density above 90% in all samples, with close compositional matching and grain sizes between 20-50 µm. Electrical characterization indicated predominantly p-type majority carriers, and the resistivity was within the range of industrially produced targets. Suitable process parameters are suggested as follows: for ball milling; 600rpm rotational speed, a ball-to-powder ratio of 5:1, and a milling time of 60-120 min. For pressing: 650-750˚C peak temperature, maintained for 1-2 h under 25-60 MPa pressure. 30 min dwell time at peak temperature before pressure application was found to reduce porosity. An initial composition of 23.2/20/6.5/50 at% of Cu, In, Ga, and Se, respectively, was found appropriate to obtain a final composition close to 22.8/20/7/50.2 at%. The project has proven that mechanical alloying combined with hot pressing provides a promising route towards efficient sputter target manufacturing, where the reduction of process operations compared to conventional manufacturing methods entails an optimistic economic outlook.

This dissertation presents research on the fabrication of optofluidic sensor platforms, which consist of integrated hollow waveguides and solid waveguides. Antiresonant reflecting optical waveguides (ARROWs) filled with liquids or gases, can be used for high-sensitivity sensing in applications of biotechnology, chemical synthesis, and analytical chemistry. The fabrication method developed for integrated ARROW sensing platforms utilizes standard microfabrication processes and materials. Dielectric cladding layers are deposited on a silicon wafer using plasma-enhanced chemical vapor deposition (PECVD) or sputtering. A sacrificial material is then patterned over the bottom cladding layers by photolithography. Additional dielectric layers are deposited around the core, forming the structure of the waveguides. Integrated solid-core waveguides can be easily created by etching a ridge into the topmost dielectric cladding layer. The hollow core waveguides are then formed by wet etching the sacrificial core material. The coupling efficiency between solid core and hollow core waveguides is extremely important for the platform's overall sensitivity. Efficiencies can be enhanced from 18% to 67% by adjusting the thickness of the thick top oxide. Experimental results prove that optical throughput was improved by 17.1× with this improved interface transmission. Sputtered films were investigated as an alternative to for producing cladding layers. The experimental results reveal that sputtered layers show poor adhesion and mechanical strength which make them unreliable for hollow waveguides with small dimension. High-sensitivity ARROW platforms were obtained by employing hybrid layers (PECVD SiO2 and sputtered Ta2O5) as claddings and building waveguides on self-aligned pedestals. The photolumiscence background was only 1/10 that of previous devices made with SiO2/SiN and the average signal-to-noise ratio was improved by 12×.

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The growth of Co (0001) films and Cr2O3 (0001)/Co (0001) has been investigated using surface analysis methods. Such films are of potential importance for a variety of spintronics applications. Co films were directly deposited on commercial Al2O3 (0001) substrates by magnetron sputter deposition or by molecular beam epitaxy (MBE), with thicknesses of ~1000Å or 30Å, respectively. Low Energy Electron Diffraction (LEED) shows hexagonal (1x1) pattern for expected epitaxial films grown at 800 K to ensure the hexagonally close-packed structure. X-ray photoemission spectroscopy (XPS) indicates the metallic cobalt binding energy for Co (2p3/2) peak, which is at 778.1eV. Atomic force microscopy (AFM) indicates the root mean square (rms) roughness of Co films has been dramatically reduced from 10 nm to 0.6 nm by optimization of experiment parameters, especially Ar pressure during plasma deposition. Ultrathin Cr2O3 films (10 to 25 Å) have been successfully fabricated on 1000Å Co (0001) films by MBE. LEED data indicate Cr2O3 has C6v symmetry and bifurcated spots from Co to Cr2O3 with Cr2O3 thickness less than 6 Å. XPS indicates the binding energy of Cr 2p(3/2) is at 576.6eV which is metallic oxide peak. XPS also shows the growth of Cr2O3 on Co (0001) form a thin Cobalt oxide interface, which is stable after exposure to ambient and 1000K UHV anneal.

<p>The optical efficiency of a commercially available sputter deposited spectrally selective solar absorber was improved. The main purposes were to decrease the thermal emittance, increase the solar absorbtance of the absorber and to protect the substrate from degradation due to environmental influence. The adhesion properties between the corrosion-protecting barrier and the substrate were also studied. This project was focused on process improvements that are realistic to implement in industrial production.</p><p>The thermal emittance of the absorber was decreased from 0.12 to 0.06 by changing the material of the corrosion-protecting layer from nickel-chromium to copper-nickel. Copper-nickel was less sensitive to variations in the sputter parameters than nickel-chromium. A novel method that could simplify the search for alternative corrosion resistant materials with a low thermal emittance has been purposed. Since resistivity data usually exist or can easily be measured and infrared measurements require more sophisticated measurements, the Hagen-Rubens relation was investigated for copper-nickel and nickel-chromium alloys. The dc-resistivity was found to be related to the infrared emittance or the integrated thermal emittance for alloys in their solid soluble fcc phase.</p><p>The solar absorbtance was increased when a graded index absorbing coating was tailored for a crossover of the reflectance from low to high reflectance at about 2.5 µm. The solar absorber graded index coating was optimized for nickel metal content in nickel oxide and a solar absorptance of 0.89-0.91 was achieved. The solar absorptance was further increased to 0.97 when an antireflection coating was added on top of the absorbing layer.</p><p>Finally, extrapolation algorithms were developed to assure correct determination of the thermal emittance for coatings on glass since modern spectrometers that do not cover the complete wavelength interval required to calculate the thermal emittance of surfaces at room temperatures accurately. The error arising from the extrapolation algorithms were smaller than the noise from the optical measurements. Similar strategies can be used for other surfaces.</p>

The development and application of a combinatorial sputtering thin film technique to screen potential scintillation material systems was investigated. The technique was first benchmarked by exploring the binary lutetium oxide-silicon oxide material system, which successfully identified the luminescence phases of the system, Lu2SiO5 (LSO) and Lu2Si2O7 (LPS). The second application was to optimize the activator concentration in cerium doped LSO. The successfully optimized cerium concentration in the thin film LSO of 0.34 atomic percent was much greater than the standard cerium concentration in single crystal LSO. This lead to an intensive study based on temperature dependent steady-state and lifetime photoluminescence spectroscopy to understand the different concentration quenching mechanisms involved in the bulk single crystal versus the thin film LSO. The results were used to develop configuration coordinate models which were employed to explain the observed concentration dependent behavior. The nature of single crystal LSO:Ce concentration quenching was determined to be due to radiative energy transfer, and ultimately self-absorption. For the thin films it was found self-absorption was not a dominant factor due to the thin dimension of the film and also its nano-crystalline nature. Instead, the photoluminescence excitation and emission spectra as a function of concentration demonstrated the concentration quenching behavior was due to an increase in defect-mediated non-radiative transitions with increasing cerium. The final application of the thin film screening technique was the exploration of the ternary Lu2O3-SiO2-Al2O3 material system doped with cerium. It was found that the presence of aluminum and silicon hindered LSO and Al5Lu3O12 (LuAG) emission, respectively. However, the presence of aluminum was found to increase LPS emission intensity. The percent of aluminum in the LPS phase was estimated at 2.5 atomic percent.

The optical efficiency of a commercially available sputter deposited spectrally selective solar absorber was improved. The main purposes were to decrease the thermal emittance, increase the solar absorbtance of the absorber and to protect the substrate from degradation due to environmental influence. The adhesion properties between the corrosion-protecting barrier and the substrate were also studied. This project was focused on process improvements that are realistic to implement in industrial production. The thermal emittance of the absorber was decreased from 0.12 to 0.06 by changing the material of the corrosion-protecting layer from nickel-chromium to copper-nickel. Copper-nickel was less sensitive to variations in the sputter parameters than nickel-chromium. A novel method that could simplify the search for alternative corrosion resistant materials with a low thermal emittance has been purposed. Since resistivity data usually exist or can easily be measured and infrared measurements require more sophisticated measurements, the Hagen-Rubens relation was investigated for copper-nickel and nickel-chromium alloys. The dc-resistivity was found to be related to the infrared emittance or the integrated thermal emittance for alloys in their solid soluble fcc phase. The solar absorbtance was increased when a graded index absorbing coating was tailored for a crossover of the reflectance from low to high reflectance at about 2.5 µm. The solar absorber graded index coating was optimized for nickel metal content in nickel oxide and a solar absorptance of 0.89-0.91 was achieved. The solar absorptance was further increased to 0.97 when an antireflection coating was added on top of the absorbing layer. Finally, extrapolation algorithms were developed to assure correct determination of the thermal emittance for coatings on glass since modern spectrometers that do not cover the complete wavelength interval required to calculate the thermal emittance of surfaces at room temperatures accurately. The error arising from the extrapolation algorithms were smaller than the noise from the optical measurements. Similar strategies can be used for other surfaces.

Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT) thin films are of interest for their large dielectric permittivity, ferroelectric, and piezoelectric properties. The material has been widely studied for use in high frequency transducers, multi-layered capacitors, and ferroelectric random access memory. Copper foils are an inexpensive, flexible substrate with a low resistivity which makes them ideal for many transducer and capacitor applications. PZT thin films on copper foils were produced by RF sputtering and crystallized under reducing conditions. Causes and prevention of a cuprous oxide interlayer are discussed. The film structure was characterized by XRD, SEM, and AFM. The permittivity was low, but remanent polarization increased to as high as ~40 μC/cm² as film thickness and crystallization temperature increased. Residual stresses were measured by x-ray diffraction using the sin²ψ method. The relative permittivity of the PZT/Cu films was measured as a function of applied AC electric field. By performing a Rayleigh analysis on this data one can determine the relative contributions of the intrinsic, reversible, and irreversible components to the permittivity. The residual stress could be correlated to the reversible part of the permittivity. The first order reversal curves (FORCs), which characterize the ferroelectric switching, give indications of the defect state of the film. Cantilever energy harvesters were fabricated. Large electrodes were able to be evaporated onto the films after oxidizing pinholes and cracks on a hot plate. Devices were tested on a shaker table at < 100 Hz. A dynamic model based on Euler-Bernoulli beam equations was used to predict power output of the fabricated devices. The observed output was comparable to model predictions. Resonant frequency calculations were in line with observed first and second resonances at ~17 Hz and ~35 Hz which were also close to those predicted by the dynamic model. / Graduation date: 2013