Thesis (M.S.)--Oregon State University, 2010. / Printout. Includes bibliographical references (leaves 65-69). Also available on the World Wide Web.

The accurate knowledge of the implantation profiles is of considerable interest for testing theoretical models on the stopping of ions in matter, as well as for many important applications in metallurgy and semiconductor technology. Measurements of the depth distribution profiles of the implanted ions provide information on a wide range of fields, including ion-solid interactions, doping and diffusion. Several experimental methods have been employed to determine the depth distributions of the implanted ions. They can be divided into destructive and non-destructive methods. Most experimental results found in the literature are for heavier ions implanted into lighter target materials where the non¬destructive Rutherford Back-scattering method can be employed. Nuclear Reaction Analysis also provides a non-destructive method for determining the implanted profile of impurity atoms with mass number smaller or similar to that of the target material. One of the important effects in ion implantation is sputtering, the process in which the surface of the target material is eroded due to ion bombardment. This process modifies range moments of implantation profiles for high fluences. This study is mainly concerned about effects of sputtering on the implanted depth profile as a function of fluence and target mass. Sputtering correction factors are determined numerically to correct the theoretical depth distributions. / Dissertation (MSc (Physics))--University of Pretoria, 2006. / Physics / unrestricted

Thin films of alumina were deposited on ferrite (NiₓZn₍₁₋ₓ₎Fe₂O₄), glass, single crystal silicon and graphite substrates by RF sputtering. Though standard, amorphous Al₂O₃ films are readily soluble in hot phosphoric acid, these sputtered films exhibited only reluctant etchability by the acid. Experiments were initially performed to understand the parameters in the sputtering process which were influential in the formation of unetchable films. The results showed that a high concentration of water vapor or oxygen molecules in the sputtering chamber during deposition was the most significant variable controlling the growth of unetchable films. The films were categorized according to their degree of solubility in H₃PO₄ and were examined using various microanalytical characterization techniques. TEM analysis directly showed the existence of crystalline γ-Al₂O₃ in the film at the film-substrate interface. The γ-Al₂O₃ phase grew with a preferred orientation coincident with the substrate orientation--as in heteroepitaxial growth. The occurrence of this film phase was related to the oxygen partial pressure, the substrate material, and the substrate temperature and was believed to be the cause of the film's incomplete etching behavior.

Energy distribution measurements of sputtered neutral particles contribute to the general knowledge of sputtering, a common technique for surface analysis. In this work emphasis was placed on the measurement of energy distribution of sputtered neutral atoms from different depths. The liquid Ga-In eutectic alloy as a sample target for this study was ideal due to an extreme concentration ratio gradient between the top two monolayers. In pursuing this study, the method of sputter-initiated resonance ionization spectroscopy (SIRIS) was utilized. SIRIS employs a pulsed ion beam to initiate sputtering and tunable dye lasers for resonance ionization. Observation of the energy distribution was achieved with a position-sensitive detector. The principle behind the detector's energy resolution is time of flight (TOF) spectroscopy. For this specific detector, programmed time intervals between the sputtering pulse at the target and the ionizing laser pulse provided information leading to the energy distribution of the secondary neutral particles. This experiment contributes data for energy distributions of sputtered neutral particles to the experimental database, required by theoretical models and computer simulations for the sputtering phenomenon.

by Sou Ka Hou. / On t.p. "2', "3", and "T" are subscript following "deposition of" in the title. / Parallel title in Chinese characters. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1992. / Includes bibliographical references (leaves [88]). / Chapter 1. --- Introduction --- p.1 / Chapter 2. --- Computer-controlled sputtering system for deposition of high Tc thin films --- p.10 / Chapter 2.1 --- Introduction --- p.10 / Chapter 2.2 --- Vacuum system --- p.12 / Chapter 2.3 --- Gas flow control --- p.16 / Chapter 2.3.1 --- Design --- p.16 / Chapter 2.3.2 --- Flow control --- p.18 / Chapter 2.4 --- Gas pressure control --- p.21 / Chapter 2.4.1 --- Gauges --- p.21 / Chapter 2.4.2 --- Control method --- p.21 / Chapter 2.5 --- "Sputtering, guns and deposition control" --- p.24 / Chapter 2.5.1 --- Types --- p.24 / Chapter 2.5.2 --- Orientation of the sputter gun --- p.26 / Chapter 2.5.3 --- Dual magnetron gun system --- p.26 / Chapter 2.5.4 --- Deposition control system --- p.27 / Chapter 2.6 --- Substrate holder and temperature control --- p.30 / Chapter 2.6.1 --- Substrate holder --- p.30 / Chapter 2.6.2 --- Substrate temperature control --- p.31 / Chapter 2.7 --- Interlock protection --- p.34 / Chapter 2.8 --- Control program --- p.35 / Chapter 3. --- The presputtering effect --- p.39 / Chapter 3.1 --- Presputtering effect (a review) --- p.39 / Chapter 3.2 --- Emission spectroscopy on sputtered materials --- p.48 / Chapter 3.3 --- Experimental --- p.49 / Chapter 3.4 --- Emission spectra --- p.53 / Chapter 3.4.1 --- Effect of sputter power source --- p.53 / Chapter 3.4.2 --- Effect of gas ratio --- p.58 / Chapter 3.4.3 --- Effect of gas pressure --- p.64 / Chapter 3.4.4 --- Study of presputtering effect --- p.67 / Chapter 3.4.5 --- Monitoring the evaporation rate by the spectral line intensities --- p.71 / Chapter 4. --- Conclusion and discussion --- p.75 / Chapter Appendix A. --- Motor control --- p.77 / Chapter Appendix B. --- Thin film deposition --- p.82

Thesis (Ph.D.)--University of Delaware, 2009. / Principal faculty advisor: Robert L. Opila, Dept. of Materials Science & Engineering. Includes bibliographical references.

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Thesis (M.S.)--Auburn University, 2007. / Abstract. Vita. Includes bibliographic references (ℓ. 70-73)

Thesis (Ph. D.)--Missouri University of Science and Technology, 2008. / Vita. The entire thesis text is included in file. Title from title screen of thesis/dissertation PDF file (viewed March 18, 2009) Includes bibliographical references.