Les TCOs (Transparent Conductive Oxide) trouvent des applications dans de nombreux domaines s'étendant del'électrochromie au photovoltaique en passant par l'opto-électronique. Parmi les matériaux historiques, les TCOs detype n font l'objet d'une littérature abondante tandis que les TCO de type p sont quant à eux étudiés de façon plusconfidentielle mais commencent à susciter un engouement, notamment dans l'objectif de jonctions p-ntransparentes.Sur la base de la théorie de la méthode de modulation chimique de bande de valence, le composé CuCrO2 destructure délafossite est considéré comme un candidat intéressant de TCO de type p. L'objectif de ces travaux estd'élaborer des films minces à base de CuCrO2 avec une transmittance optique acceptable et une conductivitéélectrique de type p élevée afin de envisager la possibilité de fabrication des jonctions p-n transparents pourdiverses applications.Dans ce travail, les films CuCrO2 ont été déposés par co pulvérisation cathodique magnétron en condition réactiveà partir de cibles métalliques. Une substitution partielle de Cr par Mg a ensuite été effectuée et l'influence del'épaisseur du film CuCrO2 :Mg sur ses propriétés optoélectroniques a été étudiée. Enfin, des revêtementsd'architecture sandwich CuCrO2 :Mg/Ag/CuCrO2 :Mg ont été élaborés en faisant varier le temps de dépôt de lacouche intermédiaire d'argent afin d'améliorer les performances optoélectroniques des films. / Transparent conductive oxides (TCOs) can be widely used in various domains from electrochromics to photovoltaicsowing to their unique optoelectronic properties. During the history of the development of TCOs, most attention hasbeen focused on n-type TCOs, while p-type TCOs have made slow progress. Recently, the studies on p-type TCOsraised many interest especially due to their potential application in the fabrication of transparent p-n junctions.Based on the theory of chemical method of valance band, CuCrO2 compound with delafossite structure isconsidered as an interesting candidate for p-type TCOs. The objective of this work is to synthesize CuCrO2-basedthin films with acceptable optical transmittance and high p-type electrical conductivity in order to explore thepossibility of fabrication of transparent p-n junctions for various applications.In this work, CuCrO2 films were deposited by reactive sputtering from metallic targets. Then, partial Cr substitutionby Mg was performed into CuCrO2 films and the influence of the films thickness on its optoelectronic properties wasstudied. Finally, sandwich architectural coatings of CuCrO2 :Mg/Ag/CuCrO2 :Mg were designed in order to improvethe films optoelectronic performances.

Metal oxides are a very important class of materials with a wide range of photovoltaic applications. Transparent conducting oxides (TCOs) are the primary front contact materials used in thin film solar cells. Identification of methods for reducing the resistivity of these materials would have significant benefits. Development of p-type TCOs would provide alternative back contact materials and could enable further development of technologies such as bifacial, window and multijunction cells. A series of studies into these areas is presented in this work. Aluminium doped zinc oxide (AZO) is a well-known n-type TCO consisting entirely of Earth-abundant materials. Targets were manufactured from AZO powder, which was synthesised using a patented emulsion detonation process developed by Innovnano S.A. All films showed good optical transmission. Resistivity was found to decrease with both increasing time and temperature up to 300 degree C. Temperatures above 300 degree C were found to be detrimental to film formation, with increasing amounts of damage to the crystal structure and consequent increases in the resistivity. The effect of alloying molybdenum oxide with molybdenum nitride through reactive sputtering in a mixed oxygen-nitrogen atmosphere was investigated. All alloys were found to show p-type behaviour. Resistivity was found to improve with increased nitrogen content, in contrast to optical transmission, which reduced. A selection of compositions were deposited onto CdTe cells as back contacts. These cells showed an increase in efficiency with increasing nitrogen content. Work function was found to increase with increasing oxygen content, but all work functions were low. Resistivity was shown to correlate strongly with efficiency, caused by a corresponding increase in cell voltage. This implies that to form an ohmic contact on CdTe with p-type materials, work function may be less important than resistivity. The copper oxides are p-type, but uses are limited by the narrow band gaps. Cupric oxide was chosen for investigation and for alloying with other oxides with the aim of increasing the band gap. It was found that temperature and deposition environment have significant impacts on sputtered cupric oxide (CuO) films, with low temperatures and high oxygen environments producing the lowest resistivities. Extrinsic sodium doping was found to reduce the resistivity by up to four orders of magnitude. High oxygen content sodium-doped films were found to have carrier concentrations two orders of magnitude higher than that of indium tin oxide.

Transparent conductive oxides are an essential part of technologies that require both large-area electrical contact and optical access in the visible portion of the light spectrum. SnO2 doped with Fluorine (SnO2: F) and In2O3 doped with tin (ITO) are the most popular choices of front contacts for CdTe solar cells. In this thesis, CdS/CdTe devices were fabricated with SnO2: F (MOCVD) and ITO (sputtering) as front contacts without a high resistivity (resistivity relatively greater than front contact) buffer layer. The device characteristics of these devices were low but improved considerably after the inclusion of an intrinsic SnO2 (SnO2-i) deposited by MOCVD as buffer. Thus having emphasized and demonstrated the benefits of a buffer layer in these devices, the use of reactively sputtered SnO2 (intrinsic), SnO2 doped with Zinc (5% and 10% Zinc) and In2O3(intrinsic) as buffer layers in SnO2:F/buffer/CdS/CdTe devices were explored. Experiments were also carried out on the photovoltaic active layers of SnO2:F/SnO2-i/CdS/CdTe Solar cells. Namely, the effect of window layer thickness was studied by making a series of devices in which the CdS thickness was progressively reduced and the effect of substrate temperature (Tsub) during the deposition of the absorber layer was also studied by increasing Tsub > 600°C during CdTe CSS. In order to determine the effectiveness of In2O3 as a buffer layer, a series of ITO/In2O3/CdS/CdTe cells were fabricated with varying thickness of In2O3 (250 to 2000 Ǻ) and also the CdS thickness was reduced in steps (~800 Ǻ to~500 Ǻ) in these devices. ITO/ In2O3 device with efficiency greater than 14% (Voc: 820 mV, FF: 72% and Jsc: 24 mA/cm2 ) was fabricated for an In2O3 thickness of 250 Ǻ and CdS thickness of ~ 600 Ǻ. However the best efficiency of 14.7% (Voc: 830 mV, FF: 77%, Jsc: 23 mA/cm2 ) was achieved for SnO2:F/SnO2-i/CdS/CdTe device. ITO films with resistivity as low as 1.9X10-4 Ω-cm, mobility 32 cm2V-1s-1 and average transmission ~ 90% in the visible region were obtained for carrier concentration in the order of 1.1X1021 cm-3.

Thesis (Master of Engineering in Mechanical Engineering)--Cape Peninsula University of Technology, 2017. / Transparent conductive oxides (TCOs), which are widely used in transparent electronics, possess a spectral selectivity that is suitable for a solar material absorber. TCO materials have a plasma wavelength in the infrared region. Consequently electromagnetic waves shorter than a plasma wavelength are transmitted through the material, while longer electromagnetic waves are reflected on the surface. In contrast to the opaque solar selective absorbers, the plasma wavelength in TCO materials can be easily tuned by controlling the heavy doping process to match the peak shift of thermal radiation at higher temperatures. Furthermore, the use of TCO in conjunction with a solar absorber relaxes the spectral selectivity of the latter and thus widens the selection of the solar absorber; subsequently the only requirement is a thermally stable black body. Aluminum doped Zinc Oxide (AZO) is a class of TCO materials which is cost effective to manufacture due to abundance ZnO, and Aluminum raw materials. This thesis is based on the synthesis of Al doped ZnO thin films nanostructure using radio frequency RF magnetron sputtering process. The influence of the deposition parameters, including argon working pressure and substrate temperature, on the structural and optical properties of the AZO thin films is investigated by means of X-ray diffraction (XRD) and optical spectroscopy (UV-VIS-NIR). The optical constants of AZO films are extracted from transmittance and reflectance spectra using a combination of Drude and Lorentz dielectric function model. A computer simulation is developed to calculate the radiative properties of Al doped ZnO thin films nanostructure. The thermal emittance and solar absorptance is predicted indirectly from optical reflectance and transmittance of AZO films by invoking Kirchhoff’s law. A Special attention has been paid to the parameters that influence the spectral properties of the AZO films including carrier’s mobility, Al doping concentration and film thickness. Carrier’s mobility turned out to have the most significant influence on the spectrally selective performance of AZO films.