Global ETD Search

31	Ferromagnetic resonant tunneling diodes : physics and applications Ganguly, Swaroop 28 August 2008 (has links) Not available / text Diodes, Semiconductor Tunneling (Physics)
32	Optimization of etching parameters for STM tips and an STM study of SiC (0001) [square root]3 x [square root]3 reconstruction 吳誼暉, Ng, Yee-fai. January 1998 (has links) published_or_final_version / abstract / toc / Physics / Master / Master of Philosophy Scanning tunneling microscopy.
33	Methyl groups tunneling and viscoelastic relaxation in poly (methyl methacrylate) Williams, John Charles Richard. January 1978 (has links) No description available. Tunneling (Physics) Viscoelasticity.
34	Semiconductor quantum electron wave transport, diffraction, and interference : analysis, devices, and measurement Henderson, Gregory N. 08 1900 (has links) No description available. Semiconductors Tunneling spectroscopy
35	Design of a device for drilling long, small-diameter tunnels Uppaluri, Baparao 12 1900 (has links) No description available. Tunneling Drilling and boring machinery
36	SEMICLASSICAL TUNNELING EFFECT Öhman, Johan January 2014 (has links) This work is a contribution to the theory of the quantum tunneling effect. In the literature at least two barriers are studied, for which the third-order contribution to the phase - integral asymptotic approximation of the transmission coefficient do not contribute. These are the parabolic barrier and the inverse Morse barrier. In the present work we will show that with a proper choice of the so called base function there is at least one more barrier in this category namely the Eckart-Epstein potential. The fact that the third - order contribution vanishes is a good indication that we have found an optimal choice of the base function, and the treatment to find an optimal base function may be possible to generalize to other classes of potential barriers. For particles of a low energy compared to the energy near the top of the barrier we obtain a vary low transmission coefficient, which means that the probability for tunneling to occur is very low. There exist some cases, for example that with a double barrier which is transparent, even for certain relatively low energies but no evidence for this kind of transparency for a single barrier has been found. The present work does not give any such evidence. At the same time there are still speculations on cold fusion like effects, which would demand a higher probability for tunneling through for a single barrier. tunneling effect cold fusion
37	Scanning tunneling microscopy and computational chemistry studies for controlled reactions on silicon Skliar, Dimitri B. January 2009 (has links) Thesis (Ph.D.)--University of Delaware, 2008. / Principal faculty advisor: Brian G. Willis, Dept. of Chemical Engineering. Includes bibliographical references. Scanning tunneling microscopy. Silicon
38	Theoretical studies of electronic tunneling properties in monolayer and bilayer graphene lattices Wu, Di, January 2008 (has links) Thesis (M. Phil.)--University of Hong Kong, 2008. / Includes bibliographical references (leaf 57-62) Also available in print. Graphite. Tunneling (Physics)
39	Preparation and characterization of materials for tunneling and ballistic nanojunctions Rajasekaran, Rajesh. January 2008 (has links) Thesis (Ph.D.)--University of Nebraska-Lincoln, 2008. / Title from title screen (site viewed Apr. 9, 2009). PDF text: v, 156 p. : ill. (some col.) ; 9 Mb. UMI publication number: AAT 3338831. Includes bibliographical references. Also available in microfilm and microfiche formats.
40	Image-based output trajectory estimation in scanning tunneling microscopes / Clayton, Garrett M. January 2008 (has links) Thesis (Ph. D.)--University of Washington, 2008. / Vita. Includes bibliographical references (p. 79-85). Scanning tunneling microscopy.

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