Neuronal networks produce reliable functional output throughout the lifespan of an animal despite ceaseless molecular turnover and a constantly changing environment. The cellular and molecular mechanisms underlying the ability of these networks to maintain functional stability remain poorly understood. Central pattern generating circuits produce a stable, predictable rhythm, making them ideal candidates for studying mechanisms of activity maintenance. By identifying and characterizing the regulators of activity in small neuronal circuits, we not only obtain a clearer understanding of how neural activity is generated, but also arm ourselves with knowledge that may eventually be used to improve medical care for patients whose normal nervous system activity has been disrupted through trauma or disease. We utilize the pattern-generating pyloric circuit in the crustacean stomatogastric nervous system to investigate the general scientific question: How are specific aspects of rhythmic activity regulated in a small neuronal network? The first aim of this thesis poses this question in the context of a single neuron. We used a single-compartment model neuron database to investigate whether co-regulation of ionic conductances supports the maintenance of spike phase in rhythmically bursting “pacemaker” neurons. The second aim of the project extends the question to a network context. Through a combination of computational and electrophysiology studies, we investigated how the intrinsic membrane conductances of the pacemaker neuron influence its response to synaptic input within the framework of the Phase Resetting Curve (PRC). The third aim of the project further extends the question to a systems-level context. We examined how ambient temperatures affect the stability of the pyloric rhythm in the intact, behaving animal. The results of this work have furthered our understanding of the principles underlying the long-term stability of neuronal network function.

Luminescence measurements have been applied to three different structures namely, sulphate, fluorides and YAG. In all cases the RE doping suppresses the intrinsic emission and results in intense luminescence characteristic of the RE dopant. Additionally, in double doped samples, or contaminated ones, the TL data show that each dopant defines a glow peak, which is displaced in temperature relative to the others. Examples of this were discussed for CaS04:Ce,Mn; YAG:Nd,Tb,Cr,Mn; BaF2:Ho,Ce and BaF2:Tm,Ce. The data are discussed in terms of an energy transfer model between different parts of extended defect complexes which encompass the RE ion and the lattice defects. Calcium sulphate doped with Dy define a TL peak near 200°C suitable for radiation measurements, but when co-doped with Ag the TL peak move to higher temperatures with minor effects on the peak sensitivity. In Ce,Mn double doped samples, the peak temperatures differ by -7°C between the Ce and Mn sites. The TL glow curves from alkaline earth fluorides are complex and contain several overlapping peaks. Curve fitting show that the peak maxima below room temperature are insensitive to the RE dopant. Additionally the host material has a modest effect on the peak positions. Above room temperature each dopant provides a TL curve specific to the added RE ion and do not show common peaks. Concentration has many effects on the resultant glow curve, and even at the lowest concentration used here (0.01%) there is evidence of cluster formation. Samples with high RE content show low values of the frequency factor consistent with the energy transfer model in that the emission from RE-RE cluster dominates over the emission from direct charge recombination within the defect complex. The effect of concentration and the TL mechanism operating below room temperature are also discussed. Luminescence signals from the near surface of YAG:Nd (via CL) were contrasted with those from the bulk material via RL. Results indicate that the outer few micron layers differ significantly in luminescence response from the bulk crystal. The differences were ascribed to result from solvents that enter the YAG lattice during the growth stage or subsequently from cleaning treatments via the dislocations caused by cutting and polishing. Additionally, the growth stage may include gases from the residual air in the growth furnace trapped into the YAG lattice. In each case there is a discontinuity in luminescence intensity and/or emission wavelengths at temperatures which mach the phase transitions of the contaminants. At the transition temperature there will be a sudden pressure change and this will induce surface expansion or bulk compression. The differences between the two cases were detected by the alternatives of CL and RL excitation, where the Nd or Er lines have moved in opposite directions. The detection of such low concentrations of solvents/trapped gases by luminescence is extremely difficult due to experimental limitations. Hence their role in luminescence generation is normally ignored.

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Detailed, accurate measurements of critical current density and resistivity to determine the upper critical field have been made on a technological NbsAl conductor in magnetic fields up to 15 T, temperatures from 4.2 K up to the critical temperature and in the strain range from -1.8% to 0.7%. The uncertainty in temperature above 4.2 K was equivalent to ± 100 mK with a stability during the measurements of < 5 mK up to a limiting current of 80 A and a typical noise level of 1 µ Vm(^-1).When B(_c2){T,ε) is defined at 5%pn, 50%pn or 95%/%pn, an empirical relation is found where and an approximate relation, holds. The Jε data were parameterised using F(_p) = J(_E)B = A(ε)[Bc(_2)](^n)b(^p)(1-b)(^9) where b = B/B(_c2)(T,ε). When B(_c2)(T,ε) is constrained to be the value at 50%pn or 95%pn, the scaling law for F(_p) breaks down such that p and q are strong functions of temperature and q is also a strong function of strain. However, when B(_c2)(T,ε) is defined at 5%pn, there is good scaling where p and q are constants independent of temperature and strain. F(_p) can also be approximated by a Kramer form where the Ginzburg-Landau constant is γ is the electronic density of states and is interpreted as the average B(_c2) for the bulk where percolative current flow occurs. The critical current density of Hot Isostatic Pressed (HIP'ed) and unHIP'ed Nb(_3)Sn Modified Jelly Roll wires has also been measured at 4.2 K. The critical current and upper critical field were decreased for the HIP'ed sample. The reduced upper critical field of the HIP'ed wire was found to be less sensitive to strain than the unHIP'ed wire. The exponent of B(_c2) in the flux pinning scaling law increased from 0.86 to 2.14 as a result of the HIP processing.

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Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is to provide detailed assessments of device stability, temperature dependence, and related phenomena for IGZO-based TFTs processed at temperatures between 200 °C and 300 °C. TFTs tested exhibit an almost rigid shift in log₁₀(I[subscript D]) – V[subscript GS] transfer curves in which the turn-on voltage, V[subscript ON], moves to a more positive gate voltage with increasing stress time during constant-voltage bias-stress testing of IGZO TFTs. TFT stability is improved as the post-deposition annealing temperature increases over the temperature range of 200 – 300 ºC. The turn-on voltage shift induced by constant-voltage bias-stressing is at least partially reversible; V[subscript ON] tends to recover towards its initial value of V[subscript ON] if the TFT is left unbiased in the dark for a prolonged period of time and better recovery is observed for a longer recovery period. V[subscript ON] for a TFT can be set equal to zero after bias-stress testing if the TFT electrodes are grounded and the TFT is maintained in the dark for a prolonged period of time. Attempts to accelerate the recovery process by application of a negative gate bias at elevated temperature (i.e., 100 ºC) were unsuccessful, resulting in severely degraded subthreshold swing. An almost rigid log₁₀(I[subscript D]) – V[subscript GS] transfer curve shift to a lower (more negative) V[subscript ON] with increasing temperature is observed in the range of –50 °C to +50 °C, except for a TFT with an initial V[subscript ON] equal to zero, in which case the log₁₀(ID) – V[subscript GS] transfer curve is temperature-independent. A more detailed temperature-dependence assessment, however, indicates that the log₁₀(I[subscript D]) – V[subscript GS] transfer curve shift is not exactly rigid since the mobility is found to increase slightly with increasing temperature. A noticeable anomaly is observed in certain log₁₀(I[subscript D]) – VGS transfer curves, especially when obtained at elevated temperature (e.g., 30 and 50 ºC), in which I[subscript D] decreases precipitously near zero volts in the positive gate voltage sweep. This anomaly is attributed to a gate-voltage-step-involved detrapping and subsequent retrapping of electrons in the accumulation channel and/or channel/gate insulator interface. In fact, all IGZO TFT stability and temperature-dependence trends are attributed to channel interface and/or channel bulk trapping/detrapping. / Graduation date: 2009

Processes where a molecule absorbs visible light and then converts the solar energy into chemical energy are important in many biological systems, such as photosynthesis and also in many technical applications e.g. photovoltaics. This thesis describes a part of a multidisciplinary project, aiming at a functional mimic of the natural photosynthesis, with the overall goal of production of a renewable fuel from sun and water. More specific, the thesis is focused on design and photophysical characterization of new photosensitizers, i.e. light absorbers that should be capable of transferring electrons to an acceptor and be suitable building blocks for supramolecular rod-like donor-photosensitizer-acceptor arrays. The excited state lifetime, the excited state energy and the geometry are important properties for a photosensitizer. The work presented here describes a new strategy to obtain longer excited state lifetimes of the geometrically favorable Ru(II)-bistridentate type complexes, without a concomitant substantial decrease in excited state energy. The basic idea is that a more octahedral coordination around the Ru will lead to longer excited state lifetimes. In the first generation of new photosensitizers a 50-fold increase of the excited state lifetime was observed, going from 0.25 ns for the model complex to 15 ns for the best photosensitizer. The second generation goes another step forward, to an excited state lifetime of 810 ns. Furthermore, the third generation of new photosensitizers show excited state lifetimes in the 0.45 - 5.5 microsecond region at room temperature, a significant improvement. In addition, the third generation of photosensitizers are suitable for further symmetric attachment of electron donor and acceptor motifs, and it is shown that the favorable properties are maintained upon the attachment of anchoring groups. The reactivity of the excited state towards light-induced reactions is proved and the photostability is sufficient so the new design strategy has proven successful.