<p>This thesis involves a study the fabrication and characterization of photon radiation detectors. The focus has been to develop and improve the performance of optical measurement systems, but also to reduce their cost. The work is based on the study of two types of detectors, the position sensitive detector and the thermal detector.</p><p>Infrared detectors are usually subcategorized into photonic detectors and thermal detectors. In the thermal detectors, heat generated from the incident infrared radiation is converted into an electrical output by some sensitive element. The basic structure of these detectors consists of a temperature sensitive element connected to a heat sink through a thermally isolating structure. Thin membranes of Silicon and Silicon nitride have been commonly used as thermally insulation between the heat sink and the sensitive elements. However, these materials suffer from relatively high thermal conductivity, which lowers the response of the detector. The fabrication of these membranes also requires rather advanced processing techniques and equipment. SU-8 is an epoxy based photoresist, which has low thermal conductivity and requires only standard photolithography. A new application of SU-8 as a self-supported membrane in a thermal detector is presented. This application is demonstrated by the fabrication and characterization of both an infrared sensitive thermopile and a bolometer detector. The bolometer consists of nickel resistances connected in a Wheatstone bridge configuration, whereas the thermopile uses serially interconnected Ti/Ni thermocouple junctions.</p><p>The position sensitive detectors include the lateral effect photodiodes and the quadrant detectors. Typical applications for these detectors are distance measurements and as centering devices. In the quadrant detectors, the active region consists of four pn-junctions separated by a narrow gap. The size of the active region in these detectors depends on the size of the light spot. In outdoor application, this spot size dependence degrades the performance of the four-quadrant detectors. In this thesis, a modified four-quadrant detector having the pn-junctions separated by a larger distance has been fabricated and characterized. By separating the pn-junctions the horizontal electric filed in the active region is removed, making the detector spot size insensitive.</p><p>Linearity of the lateral effect photodiodes depends on the uniformity of the resistive layer in the active region. The introduction of mechanical stress in an LPSD results in a resistance change mainly due to resistivity changes, and this affects the linearity of the detector. Measurements and simulations, where mechanical stress is applied to LPSDs are presented, and support this conclusion.</p>

This thesis involves a study the fabrication and characterization of photon radiation detectors. The focus has been to develop and improve the performance of optical measurement systems, but also to reduce their cost. The work is based on the study of two types of detectors, the position sensitive detector and the thermal detector. Infrared detectors are usually subcategorized into photonic detectors and thermal detectors. In the thermal detectors, heat generated from the incident infrared radiation is converted into an electrical output by some sensitive element. The basic structure of these detectors consists of a temperature sensitive element connected to a heat sink through a thermally isolating structure. Thin membranes of Silicon and Silicon nitride have been commonly used as thermally insulation between the heat sink and the sensitive elements. However, these materials suffer from relatively high thermal conductivity, which lowers the response of the detector. The fabrication of these membranes also requires rather advanced processing techniques and equipment. SU-8 is an epoxy based photoresist, which has low thermal conductivity and requires only standard photolithography. A new application of SU-8 as a self-supported membrane in a thermal detector is presented. This application is demonstrated by the fabrication and characterization of both an infrared sensitive thermopile and a bolometer detector. The bolometer consists of nickel resistances connected in a Wheatstone bridge configuration, whereas the thermopile uses serially interconnected Ti/Ni thermocouple junctions. The position sensitive detectors include the lateral effect photodiodes and the quadrant detectors. Typical applications for these detectors are distance measurements and as centering devices. In the quadrant detectors, the active region consists of four pn-junctions separated by a narrow gap. The size of the active region in these detectors depends on the size of the light spot. In outdoor application, this spot size dependence degrades the performance of the four-quadrant detectors. In this thesis, a modified four-quadrant detector having the pn-junctions separated by a larger distance has been fabricated and characterized. By separating the pn-junctions the horizontal electric filed in the active region is removed, making the detector spot size insensitive. Linearity of the lateral effect photodiodes depends on the uniformity of the resistive layer in the active region. The introduction of mechanical stress in an LPSD results in a resistance change mainly due to resistivity changes, and this affects the linearity of the detector. Measurements and simulations, where mechanical stress is applied to LPSDs are presented, and support this conclusion.

Dans ce mémoire, nous présentons le développement de détecteurs thermiques non refroidis de type pyroélectrique à base de films minces amorphes d'YBaCuO semi-conducteur pour des applications en imagerie infrarouge et térahertz. En première partie, nous étudions la composition et les propriétés optiques des films d'YBaCuO semi-conducteur. Nous avons montré par XPS l'existence d'un mélange entre plusieurs phases et nous avons déterminé la composition de la couche de contamination en surface d'YBaCuO, ainsi que le travail de sortie d'YBaCuO par UPS. Nous avons extrait l'indice de réfraction et le coefficient d'absorption sur une gamme de longueur d'ondes allant de l'ultraviolet à l'infrarouge proche ; nous avons aussi déterminé les valeurs des gaps optiques que nous avons corrélés à la structure granulaire des films d'YBaCuO. En seconde partie, nous étudions le comportement en transport électrique et la réponse optique de détecteurs pyroélectriques fabriqués à partir de ces films d'YBaCuO semi-conducteur. Le contact électrique entre YBaCuO et les plots métalliques peut être ohmique ou redresseur. Des mesures de résistivité en fonction de la température ont montré que la conduction électrique s'opère préférentiellement par sauts à distance variable des porteurs autour du niveau de Fermi. Les réponses à température ambiante des détecteurs dans l'infrarouge proche ont révélé - en fonction de la fréquence de modulation - un comportement de type passe-bande attribué à l'effet pyroélectrique, qui a pu être interprété par un modèle analytique. Les performances en termes de détectivité (1E9 cm.Hz^0,5/W) et de constante de temps (quelques microsecondes) se situent à l'état de l'art. / In this manuscript, we are presenting the development of uncooled thermal sensors of the pyroelectric type, based on thin films of amorphous YBaCuO semiconductor, for applications in terahertz and infrared imaging. In a first part, we discuss the composition and optical properties of the YBaCuO semiconducting films. By X-ray photoelectron spectroscopy, we show the existence of a mixture of several phases and deduce the composition of the YBaCuO surface contamination layer; by ultraviolet photoelectron spectroscopy, we determine the YBaCuO work function. By optical spectroscopy, we then extract the refractive index and the absorption coefficient over a range of wavelengths spanning from ultraviolet to the near infrared. We also determine the values of optical gaps that we have correlated with the granular structure of the YBaCuO films at the micro and nanoscales. In a second part, we study the electrical transport behavior and optical response of pyroelectric detectors made from these amorphous YBaCuO thin films. The electrical contact between YBaCuO and the metal connections can be ohmic as well as rectifying. Resistivity measurements as a function of temperature show that the electric conduction is preferentially dominated by variable distance hopping of the carriers around the Fermi level. The response of the sensors in the near infrared - as a function of the modulation frequency of the source - reveal at room temperature a band-pass type behavior attributed to the pyroelectric effect, which could be interpreted by an analytical model. The device performance in terms of detectivity (1E9 cm.Hz^0.5/W) and time constant (a few microseconds) are at the state of the art.

No description available.

No description available.

Currently, the concept of multipurpose spacecrafts is being transformed into many small spacecrafts each of them performing specific tasks and thus leading to the realization of pico and nano satellites. No matter what is the application or size, demand for more number of IR channels for earth observation is ever increasing which necessitates significant reduction in the mass, power requirement and cost of the IR detectors. In this scenario, several order of magnitude mass and power savings associated with uncooled IR arrays are advantageous compared to cooled photon detectors. However the poor speed of response of uncooled microbolometer array devices obstruct the total replacement of cooled detectors in thermal imaging applications. This is especially true when the mission requires 50 m to 100 m ground resolution, in which even the "fastest" micro bolometer arrays turns "too slow" to follow the ground trace when looked from low earth orbit (LEO). Hence there is a great and unfulfilled requirement of faster uncooled detector arrays for meeting the demand for future micro and mini satellite projects for advanced missions. The present thesis describes the systematic studies carried out in development of high performance IR and THz detectors for space applications. Ge-Si-O thin films are prepared by ion beam sputtering technique with argon (Ar) alone and argon and oxygen as sputtering species, using sputtering targets of different compositions of Ge and SiO2. The deposited thin films are amorphous in nature and have chemical compositions close to that of the target. The study of electrical properties has shown that the activation energy and hence the thermistor constant (β) and electrical resistivity (ρ) are sensitive to oxygen flow rate, and they are the least for thin films prepared with Ar alone as the sputtering species. Different thermal isolation structures (TIS), consisting of silicon nitride (Si3N4) membrane of different thicknesses, Ge-Si-O thin film and, chromium coating on the rear side of the membrane, are prepared by bulk micro-machining technique, whose thermal conductance (Gth) properties are evaluated from the experimentally determined current-voltage (I-V) characteristics. Gth shows non-linear dependence with respect to raise in temperature of thin film thermistor due to Joule heating. The infrared micro-bolometer detectors, fabricated using one of the TIS structures have shown responsivity (<v) close to 115 V W−1 at a bias voltage of 1.5 V and chopping frequency of 10 Hz, thermal time constant (τth) of 2.5 ms and noise voltage of 255 nV Hz−1⁄2 against the corresponding thermal properties of Gth and thermal capacitance Cth equal to 9.0 × 10−5 W K−1 and 1.95 × 10−7 J K−1 respectively. The detectors are found to have uniform spectral response in the infrared region from 2 µm to 20 µm, and NEDT in the range from 108 mK to 574 mK when used with an F/1 optical system. The detector, in an infrared earth sensor system, is tested before an extended black body which simulates the earth disc in the laboratory and the results are discussed. As an extension of the single element detector to array device, design of a microbolometer array for earth sensor dispensing of scanning mechanisms is presented. It makes use of four microbolometer arrays with in-line staggered configuration that stare at the earth horizons, perceiving IR radiation in the spectral band of 14 µm to 16 µm. Design of the microbolometer has been carried out keeping in mind low power, lightweight, without compromising on the performance. An array configuration of 16 × 2 pixels is designed and developed for this purpose. Finite elemental analysis is carried out for design optimization to yield best thermal properties and thus high performance of the detectors. Suitable optical design configuration was arrived to image the earth horizon on to array. Using this optimum design, prototype arrays have been fabricated, packaged and tested in front of the black body radiation source and found to have Responsivity, NEP, and D∗ of 120 V W−1, 5.0 W Hz−1⁄2, 1.10 × 107 cm Hz1⁄2 W−1 respectively. The pixels show a uniform response within a spread of ±6 % and the pixel resistances are within a range of ±5 %. Optically Immersed Bolometer IR detectors are fabricated using electron beam evaporated Vanadium Oxide as the sensing material. Spin coated polyimide is used as medium to optically immerse the sensing element to the flat surface of a hemispherical germanium lens. This optical immersion layer also serves as the thermal impedance control layer and decides the performance of the devices in terms of responsivity and noise parameters. The devices have been packaged in suitable electro-optical packages and the detector parameters are studied in detail. Thermal time constant varies from 0.57 ms to 6.1 ms and responsivity from 75VW−1 to 757VW−1 corresponding to polyimide thickness in the range 2.0 μm to 70 μm for a detector bias of 9V. Highest D obtained was 1.28 × 108 cm Hz1⁄2W−1. Noise Equivalent Temperature Difference (NETD) of 20mK is achieved for devices with polyimide thickness of 32 μm, whereas the NETD × th product is the lowest for devices with moderate thickness of thermal impedance layer. Bolometric THz detectors were fabricated using V2O5 as sensing element immersed onto germanium hemispherical lens using polyimide as immersion media. These detectors were characterized for their efficiency in detection of THz radiation in the range 10 THz to 35 THz emitted by a black body radiator. The responsivity of the devices determined in four different frequency bands covering the spectrum of interest and a maximum responsivity of 398VW−1 was observed. A variation in the responsivity is observed which is due to the characteristics absorption of polyimide in the THz region of interest and can be avoided by replacing with HDPE which has less attenuation. NEP of 6.8 × 10−10WHz−1⁄2 was observed which is very close to the state of art in the case of uncooled detectors which entitles the detectors for spectroscopic applications. Specific Detectivity D* was observed to be much higher than the conventional detectors thanks to the benefits of immersion. NETD of 26mK was observed which is advantageous of application of these detectors in imaging applications These studies have lead to development of a new technology for fabrication of high performance IR and THz detectors which can be used for spectroscopic and imaging applications. Further, this technology can be scaled for development of linear and area arrays finding applications where the speed of respnose as well as sensitivity are of equal importance. from 0.57 ms to 6.1 ms and responsivity from 75 V W−1 to 757 V W−1 corresponding to polyimide thickness in the range 2.0 µm to 70 µm for a detector bias of 9 V. Highest D∗ obtained was 1.28 × 108 cm Hz1⁄2 W−1. Noise Equivalent Temperature Difference (NETD) of 20 mK is achieved for devices with polyimide thickness of 32 µm, whereas the NETD × τth product is the lowest for devices with moderate thickness of thermal impedance layer. Bolometric THz detectors were fabricated using V2O5 as sensing element immersed onto germanium hemispherical lens using polyimide as immersion media. These detectors were characterized for their efficiency in detection of THz radiation in the range 10 THz to 35 THz emitted by a black body radiator. The responsivity of the devices determined in four different frequency bands covering the spectrum of interest and a maximum responsivity of 398 V W−1 was observed. A variation in the responsivity is observed which is due to the characteristics absorption of polyimide in the THz region of interest and can be avoided by replacing with HDPE which has less attenuation. NEP of 6.8 × 10−10 W Hz−1⁄2 was observed which is very close to the state of art in the case of uncooled detectors which entitles the detectors for spectroscopic applications. Specific Detectivity D* was observed to be much higher than the conventional detectors thanks to the benefits of immersion. NETD of 26 mK was observed which is advantageous of application of these detectors in imaging applications These studies have lead to development of a new technology for fabrication of high performance IR and THz detectors which can be used for spectroscopic and imaging applications. Further, this technology can be scaled for development of linear and area arrays finding applications where the speed of respnose as well as sensitivity are of equal importance.

In this work, we have designed, simulated, fabricated and characterized homojunction Hg1-xCdxTe detector for high operating temperature in the MWIR region. The IR photon detectors need cryogenic cooling to suppress thermal generation. The temperature of operation in narrow gap semiconductor devices is limited by the noise due to statistical nature of thermal generation-recombination in narrow gap semiconductors. To make IR systems affordable they have to be operated without cooling or with minimal cooling compatible with low cost, low power and long life. Several fundamental and technological limitations to uncooled operation of photon detectors have been discussed in Chapter-1 of this thesis. Way and means adopted to increase the operating temperature, such as non-equilibrium operation, use of multilayer stacked hetero¬structures, optical immersion etc. have also been discussed. Key to improving the detector performance at any temperature is reduction of dark currents to level below the photocurrent and ultimately to the level where detector noise is determined by the fluctuations in photon flux from the scene (BLIP limit). In addition, design of present generation uncooled Hg1-xCdxTe infrared photon detectors relies on complex hetero-structures with a basic unit cell of type n+/π/p+. Theoretical modeling and numerical simulations on TLHJ device consisting of backside illuminated n+/π/p+ photodiodes have been performed. A numerical model for solving carrier transport equations for Hg1-xCdxTe infrared photodiodes was developed in MATLAB. Finite difference discretization of carrier transport equations and successive over relaxation method have been adopted. Numerical models are more appropriate than analytical models when analyzing multi-layer hetero-structures because we can account for realistic doping profiles, compositional grading and hetero-structures using this model. The model can be suitably modified to accommodate different device architectures, designs, material properties and operating temperature. Such a generalized model is useful to a device designer to customize the detector performance as per the availability of the material to suit the application specific requirements. The present work therefore proposes a more flexible, accurate and generalized methodology to accommodate the user needs by simulating the position dependence of carrier concentration, electrostatic potential and g-r rates and their effect on detector performance vis-à¬vis contact doping, absorber doping and absorber width on device performance. We detail aspects of our simulation model by developing a library of Hg1-xCdxTe properties using analytical and empirical expressions for material parameters (energy band gap, electron affinity, intrinsic carrier concentration, carrier effective mass, carrier mobility, dielectric constant and absorption coefficient). The PDEs were solved using the FDM coupled with SOR method. Behavior of Hg1-xCdxTe diodes (homo/hetero-junction) under different biasing, illumination and non equilibrium situations were modeled. Model has been validated for experimental measured data on n on p Hg1-xCdxTe photodiodes. The numerical computations are next applied to simulation/modeling of MWIR (λc=4.5 μm) n+/π/p+ TLHJ device for operation at T=250K. Several recombination processes occur in Hg1¬-xCdxTe depending on material quality, operating temperature, device design and processing conditions. Detailed mathematical models of radiative, Auger, Shockley Read Hall (SRH), surface recombination and optical g-r are analyzed and their effect on carrier lifetime have been evaluated. Analytical models for dark currents affecting the performance of Hg1-xCdxTe diodes at different temperatures are discussed. The mechanisms contributing to dark current are: (i) the thermal diffusion of minority carriers from the neutral regions (IDiff); (ii) generation-recombination from the space charge region of diode (IG-R) (iii) trap assisted tunneling currents, wherein the traps in the depletion region or the traps in the quasi neutral p region close to the depletion edge participate in the tunneling process(ITAT); (iii) band-to-band tunneling currents (IBTB) and (iv) surface leakage currents due to shunt resistance. Total current of a photodiode is ITOT=IDiff+IG-R+ITAT+IBTB+ISH-IP, where IP is the photocurrent. We evaluate the variation of electrostatic potential, carrier concentration, and electric field and g-r profiles as a function of position. The effect of variation in absorber width, doping and contact doping on D* is also analyzed. The mathematical models of different g-r processes (Auger, SRH, radiative, surface recombination and optical generation) affecting the device performance analyzed and their affect on carrier lifetimes are investigated. Responsivity ~3.25Amp-Watt-1, noise current~2pA/Hz1/2 and D* ~8x109 cmHz1/2watt-1 at 0.1V reverse bias have been calculated using optimized values of doping concentration, absorber width and carrier lifetime. The suitability of the method has been illustrated by demonstrating the feasibility of achieving the optimum device performance by carefully selecting the device design and other parameters. The numerical models provided insight about the operation and performance of Hg1-xCdxTe Auger-suppressed infrared photodiodes. Hetero-junction configuration increases the dynamic resistance, while the heavily doped contacts reduce the contact resistance. Wide gap/heavily doped contacts present a barrier to injection of minority carries into the absorber layer. At the same time they allow collection of minority carriers generated in the absorber region at the contacts. Hg1-xCdxTe hetero-diodes are grown by MOCVD and MBE with precise doping and compositional gradient control to reduce g-r contributions from defects and dislocations to the dark current in order to reap advantages of Auger suppression. Measured dark currents in hetero-junction photodiodes continue to be larger than expected in spite of the advancements in MBE technique. Delineation of an array on hetero-structures involves mesa separation of the diodes thus creating additional surface requiring passivation. Overall, the whole effort of fabricating a hetero Hg1-xCdxTe detector array is disproportionate to the overall gain in the performance. Therefore, we employ a much simpler fabrication process of homo-junction Hg1-xCdxTe detectors. It involves a planar device fabrication approach thus minimizing the surface passivation problem. We have deliberated upon the specific growth, characterization techniques and processing steps employed in our study. We discuss some of the experimental issues. We also presented results on the novel processing techniques developed that are potentially applicable to HOT technology and Hg1-xCdxTe technology in general. Hg1-xCdxTe (x=0.27-0.31) layer of ~ 15×15mm2 area and 15-20µm thickness is grown on CdZnTe substrate by Liquid Phase Epitaxy (LPE) in-house. As grown wafer is vacancy doped p-type with a carrier concentration of ~5×1015-1x1016 cm-3 and hole mobility of ~400cm2V-1s-1@80K. Planar n+/ν/p junction ~2-3µm deep is formed by B+ ion implantation and subsequent annealing; details are outlined in Chapter-4. Hall measurements and differential Hall measurements were used to find the carrier concentration, carrier mobility, resistivity of the wafer. The diodes are formed in the form of a 2D array along with various PEV’s for process characterization. Composition of Hg1-xCdxTe wafers used for the work is in the range of 0.27¬ 0.31 as determined by FTIR, corresponding to cutoff wavelength of 4.5-6.5µm. Junction depth and doping profile of the diodes after ion implantation was characterized by differential Hall technique. Transient minority carrier lifetime in fabricated MWIR n+/ν/p Hg1-xCdxTe (x=0.27) diodes were characterized using diode reverse-recovery technique. We prefer this method because it is a direct indicator of device as well as material quality post processing. By this time the device has undergone all the chemical/mechanical treatments and the measured lifetime is the cumulative of g-r mechanisms operative in bulk, space charge region and surface of diode. The value of lifetime extracted from the measured data lies in the range of 80-160ns. Variable temperature lifetime data was also extracted to determine the prevalent g-r process operative in the device. Diode dark I-V and junction C-V measurements were also made to correlate the observed behavior of the measured lifetime with g-r processes. Evidence of Auger suppression at room temperature is seen in the dark I-V characteristics via observation of negative differential resistance in the homo-junction Hg1-xCdxTe diodes. The experimental data is fitted using the numerical and analytical models developed. Based on this fitting, the current mechanisms limiting the dark current in these photodiodes are extracted. An improved analytical I-V model is reported by incorporating TAT and electric field enhanced Shockley-Read-Hall generation recombination process due to dislocations. Tunneling currents are fitted before and after the Auger suppression of carriers with energy level of trap (Et), trap density (Nt) and the doping concentrations of n+ and νregions as fitting parameters. Values of Et and Nt were determined as 0.78-0.80Eg and ~7-9×1014 cm-3 respectively in all cases. Doping concentration of νregion was found to exhibit non-equilibrium depletion from a value of 2×1016 to 4×1015 cm-3. Quantum efficiency of the diodes was found to ~25-30%. Note, that these are wafer level measurements on unpackaged device without backside AR coating. In addition to junction diodes, we present results on several PEV's such as VADA, MIS/MIM capacitors and TLM structures both at room and low temperature. Variable temperature measurements for a VADA tile and subsequent analysis provide evidence of g-r processes originating from defects, dislocations and dislocation loops, which are non-uniformly distributed across the Hg1-xCdxTe wafer and contributes to TAT current at high temperatures. MIS analysis yielded surface charge density lying between 3×1010-1×1011 cm-2 for ZnS/CdTe surface corresponding to a near flat band condition. Results of low and variable temperature measurements on the devices have also been shown to correlate it with the possibility of operating the device at mid temperatures such as 180-250K.