Investigation of the thermal quenching of photoluminescence (PL) in semiconductors provides valuable information on identity and characteristics of point defects in these materials, which helps to better understand and improve the properties of semiconductor materials and devices. Abrupt and tunable thermal quenching (ATQ) of PL is a relatively new phenomenon with an unusual behavior of PL. This mechanism was able to explain what a traditional model failed to explain. Usually, in traditional model used to explain “normal” quenching, the slope of PL quenching in the Arrhenius plot determines the ionization energy of the defect causing the PL band. However, in abrupt quenching when the intensity of PL decreases by several orders of magnitude within a small range of temperature, the slope in the Arrhenius plot has no relation to the ionization energy of any defect. It is not known a priori if the thermal quenching of a particular PL band is normal or abrupt and tunable. Studying new cases of unusual thermal quenching, classifying and explaining them helps to predict new cases and understand deeper the ATQ mechanism of PL thermal quenching. Very few examples of abrupt and tunable quenching of PL in semiconductors can be found in literature. The abrupt and tunable thermal quenching, reported here for the first time for high-resistivity ZnO, provides an evidence to settle the dispute concerning the energy position of the LiZn acceptor. In high-resistivity GaN samples, the common PL bands related to defects are the yellow luminescence (YL) band and a broad band in the blue spectral region (BL2). In this work, we report for the first time the observation of abrupt and tunable thermal quenching of the YL band in GaN. The activation energies for the YL and BL2 bands calculated through the new mechanism show agreement with the reported values. From this study we predict that the ATQ phenomenon is quite common for high-resistivity semiconductors.

L’utilisation de revêtements et de couches minces déposés sur substrats est très recherchée dans de nombreuses applications. Les objectifs de ces revêtements et dépôts sont multiples (améliorer la durabilité des structures, leur résistance à l’usure et à la fatigue, etc.). D'autre part, les matériaux à gradient sont également développés en vue de répondre à de nouvelles exigences fonctionnelles, comme de meilleures tenues en température, en usure, en corrosion. Pour toutes ces applications, la caractérisation de ces revêtements et de ces matériaux à gradients, afin d’en déterminer leurs propriétés (épaisseur, constantes élastiques, adhérence, contraintes résiduelles, …etc), est déterminante pour le contrôle santé des pièces et pour leur fonctionnement optimal au cours de leur utilisation. Pour caractériser ces structures, nous avons choisi d’exploiter la dispersion des ondes de surface sur une large gamme de fréquences (10 à 60 MHz). Afin d’exciter ces ondes, des capteurs MEMS de type IDT-SAW ont été réalisés à différentes fréquences couvrant la totalité de la gamme fréquentielle considérée. L’excitation quasi-harmonique a été privilégiée dans le but d’obtenir des mesures précisesde vitesses de phase. Nous avons montré les potentialités de cette approche en caractérisant premièrement des structures à couche mince allant jusqu’à 500 nm et deuxièmement des structures amorphes à gradient de contraintes. / The use of coatings and thin layers deposited on substrates is highly sought in many applications. The objectives of these coatings and deposits are multiple (improve the durability of structures, their wear resistance and fatigue, etc.). On the other hand, gradient materials are being developed to meet new functional requirements, such as a better resistance to temperature, wear and corrosion. For all of these applications, the characterization of these coatings and gradient materials, in order to determine their properties (thickness, elastic constants, adherence, residual stresses, etc…), is decisive for the health control of pieces and for their optimum operation during their use. To characterize these structures, wechose to exploit the dispersion of surface acoustic waves over a wide frequency range (10 to 60 MHz).To excite these waves, SAW-IDT MEMS sensors have been carried out at different frequencies covering the entire frequency range we considered. The quasi-harmonic excitation was preferred to obtain accurate measures of phase velocities. We showed the potential of this approach by characterizing, first, thin layers structures (500 nm) and second, amorphous structures with a stressesgradient.