Compliant electronics are an emerging class of electronics which offer physical flexibility in their structure. Such mechanical flexibility opens up opportunities for wide ranging applications. Nonetheless, compliant electronics which can be functional in unusual environments are yet to be explored. Unusual environment can constitute a harsh environment where temperature and/or pressure is much higher or lower than the usual room temperature and/or pressure. Unusual environment can be an aquatic environment, such as ocean/sea/river/pond, industrial processing related liquid and bodily fluid environment, external or internal for implantable electronics. Finally, unusual environment can also be conditions when extreme physical deformation is anomalously applied to compliant electronics in order to understand their performance and reliability under such extraordinary mechanical deformations. Therefore, in this thesis, three different aspects of compliant electronics are thoroughly studied, addressing challenges of material selection/optimization for unusual environment applications, focusing on electrical performance and mechanical flexible behavior. In the first part, performance of silicon-based high-performance complementary metal oxide semiconductor (CMOS) devices are studied under severe mechanical deformation. Next, a high-volume manufacturing compatible solution is offered to reduce the usage of toxic chemicals in semiconductor device fabrication. To accomplish this, Germanium Dioxide (GeO2) is simultaneously used as transient material and dielectric layer to realize a dissolvable/bioresorbable transient electronic system which can be potentially used for implantable electronics. Finally, wide bandgap semiconductor Gallium Nitride is studied to understand its mechanical flexibility under high temperature conditions. In summary, this research contributes to the advancement of material selection, optimization and process development towards achieving compliant and transient devices for novel applications in unusual environments.

The objective of this doctoral thesis is to develop, engineer and investigate an amorphous metal tungsten nitride (aWNx) and to study its functionality for applications focused on electromechanical system at the nano-scale. Charge transport based solid state device oriented complementary metal oxide semiconductor (CMOS) electronics have reached a level where they are scaled down to nearly their fundamental limits regarding switching speed, off state power consumption and the on state power consumption due to the fundamental limitation of sub-threshold slope (SS) remains at 60 mV/dec. NEM switch theoretically and practically offers the steepest sub-threshold slope and practically has shown zero static power consumption due to their physical isolation originated from the nature of their mechanical operation. Fundamental challenges remain with NEM switches in context of their performance and reliability: (i) necessity of lower pull-in voltage comparable to CMOS technology; (ii) operation in ambient/air; (iii) increased ON current and decreased ON resistance; (iv) scaling of devices and improved mechanical and electrical contacts; and (v) high endurance. The “perfect” NEM switch should overcome all the above-mentioned challenges. Here, we show such a NEM switch fabricated with aWNx to show (i) sub-0.3-volt operation; (ii) operation in air and vacuum; (iii) ON current as high as 0.5 mA and ON resistance lower than 5 kΩ; (iv) improved mechanical contact; and the most importantly (v) continuous switching of 8 trillion cycles for more than 10 days with the highest switching speed is 30 nanosecond without hysteresis. In addition, tungsten nitride could be the modern life vine by fulfilling the demand of biodegradable material for sustainable life regime. Transient electronics is a form of biodegradable electronics as it is physically disappearing totally or partially after performing the required function. The fabricated aWNx suites this category very well, despite not being a universal bio-element. It has been found that aWNx dissolves in ground water with a rate of ≈ 20-60 nm h-1. This means that a 100 nm thick aWNx disappears in ground water in less than a day and three days are enough to dissolve completely a 300 nm thickness device.

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