No description available.

<p>Recent advances in electromagnetics introduced tools that enable the creation of arti-</p><p>cial electromagnetic structures with exotic properties such as negative material pa-</p><p>rameters. The ability to express these parameters has experimentally demonstrated</p><p>using passive metamaterial structures. These structures, based on their passivity and</p><p>resonant properties, are typically associated with high loss and signicant bandwidth</p><p>limitations.</p><p>Enhancing and further exploring novel electromagnetic properties can be done</p><p>through embedding active circuits in the constitutive unit cells. Active elements</p><p>are able to supplement the passive inclusions to mitigate and overcome loss and</p><p>bandwidth limitations. The inclusion of these circuits also signcantly expands the</p><p>design space for the development of functional metamaterials and their potential</p><p>applications.</p><p>Due to the relative diculty of designing active circuits compared with passive</p><p>circuits, using active circuits in the construction of metamaterials is still an under-</p><p>developed area of research. By combining the two elds of active circuit design and</p><p>metamaterial design, we aim ll the functional active metamaterial design space.</p><p>This document provides the basis for understanding the design and synthesis of</p><p>functional active metamaterials.</p><p>To provide necessary background matter, chapter 1 will function as an introduc-</p><p>tion chapter, discussing how active electromagnetic metamaterials are created and characterized. There are also several required design techniques necessary to suc-</p><p>cessfully engineer a functional active metamaterial. The introduction will emphasize</p><p>on linking metamaterial unit cell response with RF/analog circuit design with a brief</p><p>introduction to the semiconductor physics important to aid in the understanding of</p><p>the full active metamaterial design and fabrication process.</p><p>The subsequent chapters detail our specic contributions to the eld of func-</p><p>tional active RF metamaterials. Chapter 2 introduces and characterizes a meta-</p><p>material designed to have a tunable quality factor (tunable resonant bandwidth).</p><p>This metamaterial is essentially passive but demonstrates the transistor's versatility</p><p>as a combination of tunable elements, motivating the use of embedding transistors</p><p>in metamaterials. After establishing a simple application of a transistor in a pas-</p><p>sive metamaterial, chapter 3 outlines the design and characterization of an active</p><p>metamaterial exhibiting the properties of loss cancellation and gain. Chapter 4 in-</p><p>troduces another active metamaterial with the ability to self-adapt to an incident</p><p>signal. Within the self-adapting system, several complex RF circuit systems are</p><p>simulatenously developed and implemented such as a self-oscillating mixer and a</p><p>phase locked loop. Conclusions and additional suggested future research directions</p><p>are discussed in chapter 5.</p><p>There are also several appendices attached at the end of this document that are</p><p>meant to assist future graduate students and other readers. The additional topics</p><p>include the experimental verication of a passive magnetic metamaterial acting as a</p><p>near eld parasitic, the stabilization and measurement of a tunnel diode, a discussion</p><p>on the challenges of realizing active inductors from discrete components, and a basic</p><p>strategy for creating a non-volatile metamaterial. It is my aim for these appendices</p><p>to help provide additional inspiration for future studies within the eld.</p> / Dissertation

Ph.D. / Please refer to full text to view abstract

Thesis (M.S.)--Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.

The last six years has seen the emergence and rapid development of a new type of field effect transistor, the High Electron Mobility Transistor (HEMT), which offers improved performance in both digital and analogue circuits compared with circuits incorporating either MEtal Semiconductor (MES) or Metal Oxide Semiconductor (MOS) FETs. A new physically-based analytic model for HEMTs, which predicts the DC and RF electrical performance from the material and structural parameters of the device, is presented. The efficacy of the model is demonstrated with comparisons between simulated and measured device characteristics, at DC and microwave frequencies. The good agreement with experiment obtained with the model indicates that velocity overshoot effects are considerably less important in HEMTs than has been widely assumed, and that the electron transit velocity in submicron devices is approximately 10 cm/s, rather than around 2x10 cm/s. The Inverted HEMT, one of the major HEMT structural variants, is emphasized throughout this work because of its potential advantages over other variants, and practical results from 0.5 micron gate length Inverted HEMTs are presented. / Thesis (Ph.D.)-University of Natal, Durban, 1986.

No description available.

Thesis (M.S.)--University of Wisconsin--Madison, 1967. / eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references.

Thesis (Ph. D.)--University of Texas at Austin, 1999. / Vita. Includes bibliographical references (leaves 118-126). Available also in a digital version from Dissertation Abstracts.

This study uses differential pass transistor methodology for implementing and evaluating Boolean functions. The main goal is investigation of CMOS and nMOS approaches in pass transistor logic design. Pass-transistor logic is most effective in the implementation of Boolean functions when the vectors are in the same format. It has been demonstrated that nMOS pass transistor logic driven by a control signal voltage above the V dd level offers a significant improvement in speed. nMOS pass transistorsalso offer less area consumption in comparison to the CMOS approach. The philosophy developed here has been used in the design of a program for the layout generation of pass transistor networks. This program has been applied to the design of a 4-to-1 multiplexer and an adder (sum and carry). The layout of the circuit sub-cell have been done using the program Magic, based on 3μ CMOS p-well technology.

Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1982. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND ENGINEERING. / Vita. / Includes bibliographical references. / by Max Wolff Hauser. / M.S.