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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Laser spectroscopy of the A4II-X4[summation]- transition of molybdenumnitride (MoN)

施少群, Sze, Siu-kwan. January 1995 (has links)
published_or_final_version / Chemistry / Doctoral / Doctor of Philosophy
2

Laser spectroscopy of the A4II-X4[summation]- transition of molybdenum nitride (MoN) /

Sze, Siu-kwan. January 1995 (has links)
Thesis (Ph. D.)--University of Hong Kong, 1995. / Includes bibliographical references.
3

Characterization of the electronic structure of complexes containing metal-heteroatom multiple bonds.

Hoppe, Martin Louis. January 1988 (has links)
The electronic structure of a variety of metal-heteroatom multiply bonded complexes, including some active alkyne metathesis catalysts, have been investigated using He(I) and He(II) ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and Fenske-Hall molecular orbital calculations. Utilizing this electronic structure information, confirmation of the proposed mechanism for the alkyne metathesis reaction which involves formation of a metallacyclobutdienyl intermediate was ascertained. Also, the important relationships between metallatetrahedral and metallacyclobutadienyl complexes, both of which have been mentioned as possible intermediates in the alkyne metathesis reaction and for which examples have been prepared and isolated, are discussed in significant detail. In the final chapters the electronic structure of some corresponding metal-nitrogen triply bonded complexes are discussed as well as the results probing the charge distribution in metal-heteroatom multiply bonded systems as determined by the XPS experiment.
4

Growth of III-V nitride materials by MOCVD for device applications /

Eiting, Christopher James, January 1999 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 1999. / Vita. Includes bibliographical references (leaves 129-137). Available also in a digital version from Dissertation Abstracts.
5

Engineering Si-compatible materials based on transparent nitrides and conductive oxides (TNCOs) for broadband active plasmonic and metamaterials applications

Wang, Yu 05 November 2016 (has links)
Alternative plasmonic materials of Transparent Nitrides and Conductive Oxides (TNCOs) including Indium Tin Oxide (ITO), Al-doped ZnO (AZO) and Titanium Nitride (TiN), have been proposed as novel material platforms for Si-compatible plasmonics and metamaterials, showing enhanced light-matter interaction over a broad spectral range. It has been recently shown that these materials feature reduced optical losses compared with conventional noble metals such as Au and Ag in the visible and near-infrared spectral range. However, it is still an open challenge to tailor the structural and optical properties of these materials, and to further reduce their optical losses, in order to effectively utilize them in photonic devices. In this thesis work, I demonstrate wide tunability of the optical and structural properties of ITO, AZO and TiN thin films, by using post-deposition annealing treatments, enabling significant reduction of their optical losses. By measuring the optical bandgaps of the investigated materials, I show that the tunability of the optical properties originates from the modulation of the free carrier concentration induced by the annealing treatment. Moreover, I perform XRD characterization of the fabricated films, indicating that the annealing also effectively tunes the grain size, which is consistent with the change of the optical properties. Eventually, I investigate the role of the annealing gases for ITO and AZO, demonstrating that free-carrier modulation in ITO and AZO is due to the change in the density of oxygen vacancies after post-deposition annealing. In particular, TNCOs possess epsilon-near-zero (ENZ) condition in near-infrared range with optical loss ε^"<1, thus providing enhanced internal fields in the medium at the ENZ condition. In collaboration with Prof. Nader Engheta and the previous post-doc in our group Dr. Antonio Capretti, we demonstrate enhanced second-harmonic generation (SHG) and third-harmonic generation (THG) from ITO thin films driven by ENZ condition. It results that the SHG generation efficiency is comparable with that of a crystalline quartz plate of thickness 0.5 mm, and that the THG generation efficiency is ∼600 times larger than crystalline silicon. As an application for the fabricated TiN material, I investigate PL intensity and lifetime in Hyperbolic Metamaterials (HMMs) coupled with emitting Si Quantum Dots (QDs). In collaboration with Hiroshi Sugimoto in Prof. Minoru Fujii’s group and the previous post-doc in our group Dr. Sandeep Inampudi, we demonstrate up to 1.6-times enhanced decay rate of QDs emission. Photonic devices based on TNCO plasmonic materials offer an effective approach for the engineering of novel Si-based photonic devices with enhanced light-matter coupling over a broad spectral range. As an application for the fabricated ITO, in collaboration with Hongwei Zhao in Prof. Jonathan Klamkin’s group, electro-absorption modulators are numerically investigated to show high extinction ration of greater than 6dB, while insertion loss is less than 1.3dB for wavelength range from 1.25 µm to 1.42 µm. Additionally, we demonstrate tunable optical properties of ITO thin films in mid-infrared spectrum by thermal annealing of ITO in oxygen environment. In collaboration with Sajan Shrestha and Adam Overvig in Prof. NanFang Yu’s group, we fabricate 2D periodic arrays of ITO and show wide tuning of plasmonic resonances of ITO nanostructure from 4 µm to 10 µm. Combining with the tunability of ITO thin films in near-infrared, the ITO material platform provides a promising method for the control and engineering of Si-based tunable plasmonic and metamaterial devices in the infrared spectrum. Finally, in collaboration with my colleague Ren Wang, we experimentally demonstrate silicon nanodisk arrays with tunable anapole mode excitation in the visible spectrum. The proposed high index nanostructures can be used to enhance absorption rate for applications in semiconductor photodetector.
6

Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides

Herle, P Subramanya 04 1900 (has links) (PDF)
No description available.
7

Bulk crystal growth, characterization and thermodynamic analysis of aluminum nitride and related nitrides

Du, Li January 1900 (has links)
Doctor of Philosophy / Department of Chemical Engineering / James H. Edgar / The sublimation recondensation crystal growth of aluminum nitride, titanium nitride, and yttrium nitride were explored experimentally and theoretically. Single crystals of these nitrides are potentially suitable as substrates for AlGaInN epitaxial layers, which are employed in ultraviolet optoelectronics including UV light-emitting diodes and laser diodes, and high power high frequency electronic device applications. A thermodynamic analysis was applied to the sublimation crystal growth of aluminum nitride to predict impurities transport (oxygen, carbon, and hydrogen) and to study the aspects of impurities incorporation for different growth conditions. A source purification procedure was established to minimize the impurity concentration and avoid degradation of the crystal’s properties. More than 98% of the oxygen, 99.9% of hydrogen and 90% of carbon originally in the source was removed. The AlN crystal growth process was explored in two ways: self-seeded growth with spontaneous nucleation directly on the crucible lid or foil, and seeded growth on SiC and AlN. The oxygen concentration was 2 ~ 4 x 1018cm-3, as measured by secondary ion mass spectroscopy in the crystals produced by self-seeded growth. Crystals grown from AlN seeds have visible grain size expansion. The initial AlN growth on SiC at a low temperature range (1400°C ~1600°C) was examined to understand the factors controlling nucleation. Crystals were obtained from c-plane on-axis and off-axis, Si-face and C-face, as well as m-plane SiC seeds. In all cases, crystal growth was fastest perpendicular to the c-axis. The growth rate dependence on temperature and pressure was determined for TiN and YN crystals, and their activation energies were 775.8±29.8kJ/mol and 467.1±21.7kJ/mol respectively. The orientation relationship of TiN (001) || W (001) with TiN [100] || W [110], a 45o angle between TiN [100] and W [100], was seen for TiN crystals deposited on both (001) textured tungsten and randomly orientated tungsten. Xray diffraction confirmed that the YN crystals were rock-salt structure, with a lattice constant of 4.88Å. Cubic yttria was detected in YN sample from the oxidation upon its exposed to air for limited time by XRD, while non-cubic yttria was detected in YN sample for exposures more than one hour by Raman spectra.
8

Investigation of self-heating and macroscopic built-in polarization effects on the performance of III-V nitride devices

Venkatachalam, Anusha. January 2009 (has links)
Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010. / Committee Chair: Yoder, Douglas; Committee Member: Graham, Samuel; Committee Member: Allen, Janet; Committee Member: Klein, Benjamin; Committee Member: Voss, Paul. Part of the SMARTech Electronic Thesis and Dissertation Collection.
9

Synthesis and design of alternative plasmonic materials for core-multishell nanowire photonic devices

Hansen, Katherine E. 05 November 2020 (has links)
One of the keys to successful commercialization of photonic devices is compatibility with complementary metal-oxide-semiconductor technology (CMOS), the major platform of the microelectronics industry. Silicon photonics, with plasmonic materials are promising candidates for next generation chip-scale technology. The majority of plasmonics research has focused on noble metals, which are not CMOS compatible. Transition metal nitrides are an emerging class of alternative plasmonic materials that are complementary metal-oxide-semiconductor compatible and have shown promising results when compared to devices utilizing noble metals. This dissertation highlights, a CMOS compatible method to produce such alternative plasmonic materials using atomic layer deposition (ALD), specifically ultrathin plasmonic titanium nitride, aluminum metal and zirconium nitride. A post-deposition hydrogen plasma treatment is also introduced to improve the metallic properties of the ultrathin films. Additionally, this dissertation proposes a core-multishell (CMS) nanowire (NW) device structure that utilizes these materials to enable the creation of photonic devices, specifically detailing designs for cloaking and photoelectrochemical (PEC) water splitting applications. It is shown theoretically that zirconium nitride cloaks a silicon nanowire without substantially compromising the absorption of light, resulting in a less-intrusive, better performing silicon nanowire photosensor, and outperforms a gold cloak in the wavelength region of 400-500 nm. It is demonstrated theoretically that emerging plasmonic materials TiN and ZrN are promising candidates to improve the ideal photocurrent density hematite photoanodes in core-multishell nanowire devices, allowing hematite to remain electrically thin enough to effectively transport charge carriers while absorbing light similar to thick hematite features.
10

Thermodynamic investigations of transition metal systems containing coabon and nitrogen

Teng, Lidong January 2004 (has links)
<p>In view of the important applications of carbides and carbo-nitrides of transition metals in the heat-resistant and hard materials industries, the thermodynamic activities of Cr and Mn in the Cr-C, Fe-Cr-C, Mn-Ni-C and Mn-Ni-C-N systems have been studied in the present work by the use of the galvanic cell technique. CaF<sub>2</sub><sup> </sup>single crystals were used as the solid electrolyte. The phase relationships in selected regions of the systems in question were investigated by the use of the equilibration technique. The phase compositions and microstructures of the alloys were analysed by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM).</p><p>In the Cr-C system, the Gibbs energy of formation of Cr3C2 were obtained from ElectroMotive Force (EMF) measurements conducted in the temperature range 950-1150 K. The values of the enthalpy of formation of Cr<sub>3</sub>C<sub>2</sub> were evaluated by the third-law method. The ground-state energy of the hypothetic end-member compound CrC3, in the bcc structure at 0 K, was calculated by use of the Ab-initio method. Based on the obtained results the Cr-C system was reassessed by use of the CALPHAD approach.</p><p>In the Fe-Cr-C system, 16 different alloys were quenched at 1223 K and their equilibrium phases identified by XRD. The experimental results show that the substitution of Cr by Fe in the (Cr,Fe)<sub>7</sub>C<sub>3</sub> carbide changes the lattice parameters of the phase. A slight decrease of the lattice parameters with an increase in the Fe content was established. The lattice parameters of the γ-phase in the Fe-Cr solid solution did also show a decrease with an increase of the Fe content. The activities of chromium in Fe-Cr-C alloys were investigated in the temperature range 940-1155 K. The activity of chromium decreases with an increase in the Fe content when the ratio of C/(Cr+C) was constant. It was also established that the activity of chromium decreases with an increase of the carbon content when the iron content was constant. The experimental results obtained were compared with the data calculated by use of the Thermo-Calc software. </p><p>In the Mn-Ni-C system the phase relationships were investigated at 1073 K as well as at 1223 K. The experimental results obtained showed that the site fraction of Ni in the metallic sublattice of the carbides M<sub>23</sub>C<sub>6</sub>, M<sub>7</sub>C<sub>3</sub> and M<sub>5</sub>C<sub>2</sub> (M=Mn and Ni) was quite low (approximately 2~3 percent). The activities of manganese in Mn-Ni-C alloys were investigated in the temperature range 940-1165 K. The three-phase region γ/M<sub>7</sub>C<sub>3</sub>/graphite was partly constructed at 1073 K. </p><p>In the Mn-Ni-C-N system, nitrogen was introduced into Mn-Ni-C alloys by equilibrating with N2 gas. It was established that the solubility of nitrogen in the investigated alloys was effected by the carbon content, and that a (Mn,Ni)<sub>4</sub>(N,C) compound was formed in the nitrided alloys. EMF measurements were performed on Mn-Ni-C-N alloys in the temperature interval 940-1127 K. The addition of nitrogen to Mn-Ni-C alloys was found to decrease the activity of manganese. The negative effect of nitrogen on the activity of manganese was found to decrease as the carbon content increased.</p><p><b>Keywords:</b> Thermodynamic activity; Galvanic cell technique; Transition metal carbides; Transition metal nitrides; Phase equilibrium; Thermodynamics; Differential thermal analysis; Scanning electron microscopy; Transmission electron microscopy; Ab-initio calculations; CALPHAD approach;</p>

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