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<p>Research in the area of improving the efficiency and manufacturability of alternative energy technologies has been of high interest due to the growing environmental concerns of energy resources. Group III-antimonide-based compound semiconductors have been sought after as excellent candidates for photovoltaic conversion of infrared radiation, outside the spectral range absorbed by the currently available crystalline Si solar cells. The major challenge is the GaSb/Si interface is highly lattice mismatched, and inherently heterovalent. This leads to a high density of structural defects, many of which have not been investigated fully. Both optical and electrical properties of such heteroepitaxy thin films are strongly dependent on the periodicity of the crystal lattice, and the presence of extended defects cause perturbations in the lattice periodicity. Therefore the nature of such extended defects must be understood, in order to better manipulate the growth process to minimize their presence. This thesis demonstrates that through the use of conventional transmission electron microscopy, further insight can be gained into understanding the origin, distribution, propagation, and interaction of various extended defects. From this, a couple of ways to systematically suppress some of the defects have also been implemented, and the mechanism by which they induce such a suppression is also discussed.</p> / Master of Applied Science (MASc)

<p>InP nanowires with short InAs segments were grown on InP (111)B substrates by Au assisted vapour-liquid-solid growth in a gas source molecular beam epitaxy system. Nanowire crystal structure and morphology were investigated by transmission electron microscopy as a function of temperature, growth rate, and V/III flux ratio. At 370C predominantly kinked nanowires with random morphology and low areal density were observed with a rough parasitic 2D film. At 440C, nanowire density was also reduced but the 2D film growth was smoother and nanowires grew straight without kinking. An optimum temperature of 400C maximized areal density with uniform nanowire morphology. At the optimum temperature of 400C, an increase in V/III flux ratio changed the nanowire morphology from rod-shaped to pencil like indicating increased radial growth. Growth rate did not affect the crystal structure of InP nanowires. For InAs nanowires, changing the growth rate from 1 to 0.5 μm/hr reduced the presence of stacking faults to as low as one per nanowire. Short InAs segments in InP nanowires were found to grow through two mechanisms for nanowires of length L and diameter D. The first mechanism described the supply of In to the growth front via purging of In from the Au droplet where L was proportional to D. The second mechanism involved direct deposition of adatoms on the nanowire sidewall and subsequent diffusion to the growth front where L was proportional to 1/D. For intermediate growth durations, a transition between these two mechanisms was observed. For InP and InAs nanowires, the growth mode was varied from axial to radial through the inclusion of Al to form a core shell structure. Al_xIn_1-xAs(P) shells were grown on InAs cores with Al alloy fractions between 0.53 and 0.2. These nanowires were examined by transmission electron microscopy and it was found, for all values of x in InAs-Al_xIn_1-xP structures, that relaxation had occurred through the introduction of dislocations. For InAs-Al_xIn_1-xAs structures, all values except x=0.2 had relaxed through dislocation formation. A critical thickness model was developed to determine the core-shell coherency limits which confirmed the experimental observation of strain relaxation. The effects of passivation on the electronic transport and the optical properties were examined as a function of structural core-shell passivation and chemical passivation. The mechanisms for the observed improvement in mobility for core-shell versus bare InAs nanowires was due to the reduction in ionized impurity scattering from surface states. Similarly an increase in photoluminescence intensity after ammonium sulfide passivation was explained by the reduction of donor type surface states.</p> / Doctor of Philosophy (PhD)

<p>Heteroepitaxial films of group III-antimonide-based semiconductor compounds on Si are amongst the most appealing candidates for solar applications because of the well-established Si platform and also for offering band-gap energies beyond the silicon road map. Nonetheless, high lattice mismatch between GaSb and Si as well as ambiguous nucleation of GaSb on Si are major drawbacks in manufacturing of heteroepitaxial GaSb/Si films because they can generate various defects in films. Atomic-level detection of these defects and delving into their origin, orientation, distribution, propagation, and interaction with each other will therefore provide an insight into inhibiting their formation or reducing their severity. State-of-the-art aberration-corrected transmission electron microscopes have marked a new era in the investigation of interfaces and defects. With sub-angstrom electron probes in scanning transmission electron microscopes, it is possible to pinpoint the individual atomic columns at interfaces and defects.</p> <p>In this thesis, GaSb epilayers grown with molecular beam epitaxy on Si substrates were studied through aberration-corrected scanning transmission electron microscopy. The strain-relief mechanism of the epitaxial GaSb through formation of interfacial misfit dislocations was investigated and the strain distribution in the vicinity of dislocation cores as well as epitaxial layer was analyzed. The specific atomic-number dependent contrast mechanism of the high-angle annular dark-field technique enabled the unprecedented direct observation of anti-phase boundaries, the extended defects of highest interest in polar-on-nonpolar growths. This observation unraveled the ambiguity of nucleation of GaSb at interface regardless of preferential deposition of atomic species during growth procedure. The growth of GaSb at the initial stage of deposition was further investigated to understand the role of an AlSb buffer layer and growth mechanism of GaSb precisely. This investigation showed that AlSb and GaSb epilayers occur by Volmer-Weber growth mode and AlSb islands provide energetically favorable nucleation sites for GaSb film. Furthermore, taking advantage of atomic-resolution detection capability of high-angle annular dark-field in scanning transmission electron microscopy a novel mechanism of strain relief through multiple twining resulting in a lattice-registered growth of GaSb on Si(211) was elucidated. This contribution demonstrates that aberration-corrected scanning transmission electron microscopy provides profound insight into the polar-on-nonpolar growth which can be exploited to suppress the formation of structural defects.</p> / Doctor of Philosophy (PhD)

Ternary InGaN and AlGaN alloys have been sought after for the application of various optoelectronic devices spanning a large spectral range between the deep ultraviolet and infrared, including light-emitting diodes, and laser diodes. Their non-ideal alloy mixing, and differences in bond energy and in adatom diffusion are established as the cause for various types of nanoscale compositional inhomogeneity commonly observed in nitride thin films. Growth in a nanowire geometry can overcome the phase separation, surface segregation, and chemical ordering by providing enhanced strain relaxation of the large lattice mismatch at the free surfaces. In this dissertation, the spectral and spatial luminescence distributions of ternary III-N alloy nanowire heterostructures are investigated and correlated to structural and chemical properties with scanning transmission electron microscopy. Quantitative elemental mapping of InGaN/GaN dot-in-a-wire structures using electron energy-loss spectroscopy revealed compositional non-uniformity between successive quantum dots. Local strain mapping of the heterostructure showed a dependence of the incorporation of indium on the magnitude of the out-of-plane compressive strain within the underlying GaN barrier layer. Cathodoluminescence spectroscopy on individual nanowires presented diverse emission properties, nevertheless, the In-content variability could be directly correlated to the broad range of peak emission energies. Atomic-level chemical ordering within the InGaN was then reported, and attributed to the faceted growth surface in nanowires that promotes preferential site incorporation by In-atoms that allows for better strain relaxation. Distinct atomic-scale alloy inhomogeneities were also investigated in AlGaN nanowires, which evidenced spatial localization of carriers taking place at the resulting energy band fluctuations. A high spectral density of narrow emission lines arose from such compositional modulations, whose luminescence behaviours exhibit a dependence on the nature of the compositional fluctuations from which they originate. / Thesis / Doctor of Philosophy (PhD)

Human bone tissue has an inherent hierarchical structure, which is integral to its material properties. It is primarily composed of a collagen fiber matrix that is mineralized with hydroxyapatite. A comprehensive understanding of bone and the linkages between structural and cellular organization is imperative to developing fundamental knowledge that can be applied to better our understanding of bone disease manifestations and its interaction with implant devices. Herein, this thesis investigated non-traditional methods for evaluating bone structure across the nano- and meso-length scales. Firstly, due to the inhomogeneous organization of collagen fibrils and mineral platelets of bone ultrastructure, a suitable methodology for the investigation of both phases needed to be generated. In this work, focused ion beam (FIB) microscopy was employed to create site-specific scanning transmission electron microscopy (STEM) lift-outs of human osteonal bone that could be visualized with correlatively with STEM and small angle X-ray scattering (SAXS). Samples were successfully characterized using both techniques, and minimal visual damage was induced during data acquisition. This work is the first to demonstrate the potential for bone to be investigated correlatively using both STEM and SAXS. Secondly, this work is the first to employ a dual-beam plasma FIB (PFIB) equipped with a scanning electron microscope (SEM), to investigate bone tissue across the mesoscale. This equipment enables large volume three-dimensional (3D) imaging at nanoscale resolution across larger mesoscale volumes. This thesis aimed to reduce ion beam-based artifacts, which presents as curtain-like features by adjusting the composition of protective capping layers. Subsequently, large volume tomograms of bone tissue were acquired, demonstrating the effectiveness of the PFIB to reveal mesoscale features including the cellular network of bone tissue. Overall, this thesis has developed methods that allow for the application of advanced microscopy techniques to enhance the understanding of bone tissue across the nanoscale and mesoscale. / Thesis / Master of Applied Science (MASc) / Bone tissue has a unique structure that perplexes both biologists and materials scientists. The hierarchical structure of bone has garnered the interest of materials scientists since the body’s skeletal strength and toughness are governed by the nanoscale (millionth of centimetres) to macroscale (centimeters) organization of bone. In this work, the intricate organization of bone is investigated using advanced electron and ion beam microscopy techniques, which achieve high-resolution imaging of bone structure. Firstly, this work developed a sample preparation workflow to correlate electron and X-ray imaging of the same bone tissue. Secondly, this work was the first to apply serial-sectioning plasma focused ion beam tomography to human bone tissue to investigate its structure at high resolution across micron-sized volumes. Here, previously unexplored methodologies to image bone are demonstrated with the hopes of applying such techniques to investigate healthy and pathological bone tissue in the future.

Bioindicators of the nanoscale structural quality of bone were investigated using ion milling and transmission electron microscopy of osteoporotic bone from human female donors. / Bone is a complex hierarchical biomaterial constantly undergoing remodeling events initiated by cell signaling and fulfilled by migratory bone cells. In osteoporosis, a multitude of signaling factors cause bone resorption to proceed quicker than bone reformation, resulting in a lower bone mineral density (BMD) and porosity as seen by thinning of the cortex and trabeculae. However, the structural motifs of these altered regions of the skeleton have not been understood on the nanoscale. In this thesis, transmission electron microscopy (TEM) was used with an image analysis technique termed nanomorphometry, developed to enable the measurement of nanoscale structural features in human bone. Several nanoscale bone quality bioindicators relevant to the collagen fibrils and bone mineral (mineral lamellae, ML) components were defined and tested (collagen fibril diameter, interfibrillar spacing, ML thickness & ML stack thickness) among two donor cohorts of post-menopausal osteoporotic female patients and age- and sex-matched controls. In one cohort, the anatomical region investigated was the intertrochanteric crest of the femur, while in the second, the femoral neck was studied. The bone sections were prepared using an ion milling workflow yielding electron-transparent views of the bone ultrastructure. Blinded image analysis of the ultrastructure revealed that in both cohorts, the thickness of the MLs was significantly larger in osteoporotic samples versus their controls. In the former cohort, it was found that anti-resorptive drug use in the treated group did not return the ML thickness back to control levels. In the latter cohort, the ML thickness correlated more closely with the proximal femur bone mineral density (BMD) than the age of the patient. These findings suggest that the morphology of the nanoscale mineral phase is affected by osteoporosis, an effect indirectly observed by other techniques, and warrants further exploration into the implications of this effect on bone quality, fragility and strength. / Thesis / Master of Applied Science (MASc) / Human bone is a biomaterial with many levels of organization from the macroscale down to the nanoscale. The material consists of roughly 30 weight % organic components (collagen, non-collagenous proteins) and 67 weight % inorganic components (calcium phosphate minerals) deposited by bone cells. Osteoporosis is a bone disease commonly associated with increased bone porosity and bone fragility. In this study, the effect of osteoporosis on the nanoscale structure of bone was directly imaged and investigated using transmission electron microscopy (TEM). Two advanced ion milling techniques (broad beam and focused ion beam) were used to thin the bone specimens for TEM. Bioindicators relating to the structure and size of collagen and mineral components in osteoporotic versus control bone were quantified in an unbiased image analysis workflow. Findings indicated an increase in the thickness of poly-crystalline bone mineral lamellae in the nanoscale structure of human osteoporotic bone from two human donor cohorts.