Electron transport at low temperatures in two-dimensional electron systems is governed by two quantum corrections to the conductivity: weak localisation and electron-electron interaction in the presence of disorder. We present the first experimental observation of these quantum corrections in graphene, a single layer of carbon atoms, over a temperature range 0.02 - 200 K. Due to the peculiar properties of graphene, weak localisation is sensitive not only to inelastic, phase-breaking scattering events, but also to elastic scattering mechanisms. The latter includes scattering within and between the two valleys (intra- and inter-valley scattering, respectively). These specifics make it possible, for example, to observe a transition from weak localisation to antilocalisation. Our work reveals a number of surprising features. First of all the transition occurs not only as the carrier density is varied, but also as the temperature is tuned. The latter has never been observed in any other system studied before. Second, due to weak electron-phonon interaction in graphene, quantum interference of electrons survives at very high temperatures, up to 200 K. For comparison, in other two-dimensional (2D) systems the weak localisation effect is only seen below 50 K. The electron-electron interaction correction is also affected by elastic scattering. In a two-valley system, there are two temperature regimes of the interaction correction that depend on the strength of inter-valley scattering. In both regimes the correction has its own expression. We show that because of the intra-valley scattering, a third regime is possible in graphene, where the expression for the correction takes a new form. The study of weak localisation demonstrates that the third regime is realised in our experiments. We use the new expression to determine the Fermiliquid parameter, which turns out to be smaller than in other 2D systems due to the chirality of charge carriers. At very low temperatures (below 100 mK) we observe a saturation of the electron dephasing length. We study different mechanisms that could be responsible for the saturation and discuss in detail one of them – spin-orbit interaction. We determine the spin coherence length from studies of weak localisation and the temperature dependence of the conductivity and found good agreement between the two types of experiments. We also show the way to tune the spin coherence length by an order of magnitude by controlling the level of disorder. However, experiment shows contradictions with theory both in values of the spin coherence length and the type of spin relaxation. We speculate about another spin-related mechanism, spin flip by vacancies, which to some extent could also explain our observations. We also present electron transport in graphene irradiated by gallium ions. Depending on the dosage of irradiation the behavior of electrons changes. Namely, electron localisation can be tuned from weak to strong. At low dosages we observe the weak localisation regime, where the mentioned quantum corrections to the conductivity dominate at low temperatures. We found the electron scattering between the valleys to be enhanced, attributing it to atomically sharp defects (kicked out carbon atoms) produced by ion irradiation. We also speculate that gallium ions can be embedded in the substrate or trapped between silica and graphene. We draw this conclusion after investigation of the spin-orbit interaction in irradiated samples. At high dosages electrons become strongly localised and their transport occurs via variable-range hopping.

Thesis (M.App.Sc.) - Carleton University, 2005. / Includes bibliographical references (p. 188-190). Also available in electronic format on the Internet.

Depuis le début du XX siècle, la thématique de transport a concentré l’attentionde nombreux chercheurs. L’objectif étant alors d’identifier et de comprendre lesdifférentes sources de diffusions prenant part à la résistivité de la matière. Les deuxpremières sources diffusives mises en évidence ont été les phonons dépendant de latempérature, et les défauts du réseau cristallin. Dans les années 1950, l’étude des semiconducteursa fait émerger une troisième source de diffusion, la diffusion magnétique.Dès la mise en évidence du rôle joué par le magnétisme sur la résistivité de certainsmatériaux, il a rapidement été établi que la résistivité magnétique R est tributaire dela stabilité de l’ordre magnétique du réseau. A basse température T, la diffusion desélectrons s’ opère par l e biais des ondes de spins. A haute température, R est proportionnelleaux corrélations spin-spin. Cependant, les mécanismes de diffusion ayant lieuau voisinage de la température de transition ordre/désordre magnétique restent encoremal comprise. L’objectif de cette thèse a consisté à étudier ce problème à l’aide d’uneapproche nouvelle basée sur la simulation Monte Carlo. En effet, les théories existantessont toutes construites avec des hypothèses sur les mécanismes à l’origine du comportementde résistance tels que : fonction corrélation spin-spin, longueur de localisation.Elles utilisent beaucoup d’approximations au cours du calcul telles que théorie du champmoyen, approximation du temps de relaxation, la portée des fonctions de corrélation. Lesprincipaux handicaps de ces théories sont de n’être valables que pour certaines gammesde températures, et d’être tributaires du type de magnétisme porté par les réseaux cristallins.Notre approche offre quant à elle une procédure unifiée concernant l’étude desrésistivités magnétiques fonction de la température. Cette méthode peut s’appliquer `atout type de matériaux, tout ordre magnétique (ferromagnétique, antiferromagnétique,ferrimagnétique, verre de spin, ...), tout type de modèle de spins (Ising, Heisenberg, XY,...), enfin tout type de réseau cristallin. Seule la connaissance du Hamiltonien permet defaire la simulation, et de reproduire des mesures expérimentales avec la possibilité d’unecomparaison quantitative.Dans un premier temps, nous traitons de structures ferromagnétiques et interprétons les différents mécanismes de diffusion en fonction de la température. Nousétendons ensuite l´étude aux systèmes antiferromagnétiques, frustrés et non-frustrés. Cessystèmes n’ont fait l’objet que de peu d’études. Dans le cas des systèmes antiferromagnétiques non-frustrés, nous sommes en mesure de contredire une prédiction théoriquefaite par Haas en 1968, concernant la forme de la résistance magnétique à la transition dephase . Dès lors, nous nous consacrerons à l’étude des mécanismes de transport dansdes systèmes antiferromagnétiques frustrés. Ces travaux ont permis de mettre en évidencedes comportements nouveaux des transitions de phases des résistances magnétiques : nousmontrons que ces résistances subissent une transition du premier ordre , mais qu’ilest également possible par le contrôle d’un paramètre du modèle, de choisir le sens de latransition : des hautes résistances vers les basses résistances ou inversement .Pour finir, nous confrontons nos résultats de simulations avec des mesures expérimentalesen réalisant une étude de transport sur un matériau semiconducteur antiferromagnétique :MnTe. Il résulte de cette étude un bon accord entre nos résultats de simulations et lesmesures expérimentales . / ....

Thesis (doctoral)--Helsinki University of Technology, 2007. / Includes bibliographical references. Also available on the World Wide Web.

Thesis (Ph. D.)--Ohio State University, 2006. / Title from first page of PDF file. Includes bibliographical references (p. 181-188).

No description available.

No description available.

The work presented in this thesis investigates transitions between quantum states in superconducting double dots (SDDs), a nanoscale device consisting of two aluminium superconducting islands coupled together by a Josephson junction, with each dot connected to a normal state lead. The energy landscape consists of a two level manifold of even charge parity Cooper pair states, and continuous bands corresponding to charge states with single quasiparticles in one or both islands. These devices are fabricated using shadow mask evaporation, and are measured at sub Kelvin temperatures using a dilution refrigerator. We use radio frequency reflectometry to measure quantum capacitance, which is dependent on the quantum state of the device. We measure the quantum capacitance as a function of gate voltage, and observe capacitance maxima corresponding to the Josephson coupling between even parity states. We also perform charge sensing and detect odd parity states. These measurements support the theoretical model of the energy landscape of the SDD. By measuring the quantum capacitance in the time domain, we observe random switching of capacitance between two levels. We determine this to be the stochastic breaking and recombination of single Cooper pairs. By carrying out spectroscopy of the bath responsible for the pair breaking we attribute it to black-body radiation in the cryogenic environment. We also drive the breaking process with a continuous microwave signal, and find that the rate is linearly proportional to incident power. This suggests that a single photon process is responsible, and demonstrates the potential of the SDD as a single photon microwave detector. We investigate this mechanism further, and design an experiment in which the breaking rate is enhanced when the SDD is in the antisymmetric state rather than the symmetric state. We also measure the quantum capacitance of a charge isolated double dot. We observe 2e periodicity, indicating the tunnelling of Cooper pairs and the lack of occupation of quasiparticle states. This work is relevant to the range of experiments investigating the effect of non-equilibrium quasiparticles on the operation of superconducting qubits and other superconducting devices.

Organic semiconductors are a new key technology for large-area and flexible thin-film electronics. They are deposited as thin films (sub-nanometer to micrometer) on large-area substrates. The technologically most advanced applications are organic light emitting diodes (OLEDs) and organic photovoltaics (OPV). For the improvement of performance and efficiency, correct modeling of the electronic processes in the devices is essential. Reliable characterization and validation of the electronic properties of the materials is simultaneously required for the successful optimization of devices. Furthermore, understanding the relations between material structures and their key characteristics opens the path for innovative material and device design. In this thesis, two material characterization methods are developed, respectively refined and applied: a novel technique for measuring the charge carrier mobility μ and a way to determine the ionization energy IE or the electron affinity EA of an organic semiconductor. For the mobility measurements, a new evaluation approach for space-charge limited current (SCLC) measurements in single carrier devices is developed. It is based on a layer thickness variation of the material under investigation. In the \"potential mapping\" (POEM) approach, the voltage as a function of the device thickness V(d) at a given current density is shown to coincide with the spatial distribution of the electric potential V(x) in the thickest device. On this basis, the mobility is directly obtained as function of the electric field F and the charge carrier density n. The evaluation is model-free, i.e. a model for μ(F, n) to fit the measurement data is not required, and the measurement is independent of a possible injection barrier or potential drop at non-optimal contacts. The obtained μ(F, n) function describes the effective average mobility of free and trapped charge carriers. This approach realistically describes charge transport in energetically disordered materials, where a clear differentiation between trapped and free charges is impossible or arbitrary. The measurement of IE and EA is performed by characterizing solar cells at varying temperature T. In suitably designed devices based on a bulk heterojunction (BHJ), the open-circuit voltage Voc is a linear function of T with negative slope in the whole measured range down to 180K. The extrapolation to temperature zero V0 = Voc(T → 0K) is confirmed to equal the effective gap Egeff, i.e. the difference between the EA of the acceptor and the IE of the donor. The successive variation of different components of the devices and testing their influence on V0 verifies the relation V0 = Egeff. On this basis, the IE or EA of a material can be determined in a BHJ with a material where the complementary value is known. The measurement is applied to a number of material combinations, confirming, refining, and complementing previously reported values from ultraviolet photo electron spectroscopy (UPS) and inverse photo electron spectroscopy (IPES). These measurements are applied to small molecule organic semiconductors, including mixed layers. In blends of zinc-phthalocyanine (ZnPc) and C60, the hole mobility is found to be thermally and field activated, as well as increasing with charge density. Varying the mixing ratio, the hole mobility is found to increase with increasing ZnPc content, while the effective gap stays unchanged. A number of further materials and material blends are characterized with respect to hole and electron mobility and the effective gap, including highly diluted donor blends, which have been little investigated before. In all materials, a pronounced field activation of the mobility is observed. The results enable an improved detailed description of the working principle of organic solar cells and support the future design of highly efficient and optimized devices.:1. Introduction 2. Organic semiconductors and devices 2.1. Organic semiconductors 2.1.1. Conjugated π system 2.1.2. Small molecules and polymers 2.1.3. Disorder in amorphous materials 2.1.4. Polarons 2.1.5. Polaron hopping 2.1.6. Fermi-Dirac distribution and Fermi level 2.1.7. Quasi-Fermi levels 2.1.8. Trap states 2.1.9. Doping 2.1.10. Excitons 2.2. Interfaces and blend layers 2.2.1. Interface dipoles 2.2.2. Energy level bending 2.2.3. Injection from metal into semiconductor, and extraction 2.2.4. Excitons at interfaces 2.3. Charge transport and recombination in organic semiconductors 2.3.1. Drift transport 2.3.2. Charge carrier mobility 2.3.3. Thermally activated transport 2.3.4. Diffusion transport 2.3.5. Drift-diffusion transport 2.3.6. Space-charge limited current 2.3.7. Recombination 2.4. Mobility measurement 2.4.1. SCLC and TCLC 2.4.2. Time of flight 2.4.3. Organic field effect transistors 2.4.4. CELIV 2.5. Organic solar cells 2.5.1. Exciton diffusion towards the interface 2.5.2. Dissociation of CT states 2.5.3. CT recombination 2.5.4. Flat and bulk heterojunction 2.5.5. Transport layers 2.5.6. Thin film optics 2.5.7. Current-voltage characteristics and equivalent circuit 2.5.8. Solar cell efficiency 2.5.9. Limits of efficiency 2.5.10. Correct solar cell characterization 2.5.11. The \"O-Factor\" 3. Materials and experimental methods 3.1. Materials 3.2. Device fabrication and layout 3.2.1. Layer deposition 3.2.2. Encapsulation 3.2.3. Homogeneity of layer thickness on a wafer 3.2.4. Device layout 3.3. Characterization 3.3.1. Electrical characterization 3.3.2. Sample illumination 3.3.3. Temperature dependent characterization 3.3.4. UPS 4. Simulations 5.1. Design of single carrier devices 5.1.1. General design requirements 5.1.2. Single carrier devices for space-charge limited current 5.1.3. Ohmic regime 5.1.4. Design of injection and extraction layers 5.2. Advanced evaluation of SCLC – potential mapping 5.2.1. Potential mapping by thickness variation 5.2.2. Further evaluation of the transport profile 5.2.3. Injection into and extraction from single carrier devices 5.2.4. Majority carrier approximation 5.3. Proof of principle: POEM on simulated data 5.3.1. Constant mobility 5.3.2. Field dependent mobility 5.3.3. Field and charge density activated mobility 5.3.4. Conclusion 5.4. Application: Transport characterization in organic semiconductors 5.4.1. Hole transport in ZnPc:C60 5.4.2. Hole transport in ZnPc:C60 – temperature variation 5.4.3. Hole transport in ZnPc:C60 – blend ratio variation 5.4.4. Hole transport in ZnPc:C70 5.4.5. Hole transport in neat ZnPc 5.4.6. Hole transport in F4-ZnPc:C60 5.4.7. Hole transport in DCV-5T-Me33:C60 5.4.8. Electron transport in ZnPc:C60 5.4.9. Electron transport in neat Bis-HFl-NTCDI 5.5. Summary and discussion of the results 5.5.1. Phthalocyanine:C60 blends 5.5.2. DCV-5T-Me33:C60 5.5.3. Conclusion 6. Organic solar cell characteristics: the influence of temperature 6.1. ZnPc:C60 solar cells 6.1.1. Temperature variation 6.1.2. Illumination intensity variation 6.2. Voc in flat and bulk heterojunction organic solar cells 6.2.1. Qualitative difference in Voc(I, T) 6.2.2. Interpretation of Voc(I, T) 6.3. BHJ stoichiometry variation 6.3.1. Voc upon variation of stoichiometry and contact layer 6.3.2. V0 upon stoichiometry variation 6.3.3. Low donor content stoichiometry 6.3.4. Conclusion from stoichiometry variation 6.4. Transport material variation 6.4.1. HTM variation 6.4.2. ETM variation 6.5. Donor:acceptor material variation 6.5.1. Donor variation 6.5.2. Acceptor variation 6.6. Conclusion 7. Summary and outlook 7.1. Summary 7.2. Outlook A. Appendix A.1. Energy pay-back of this thesis A.2. Tables and registers / Organische Halbleiter sind eine neue Schlüsseltechnologie für großflächige und flexible Dünnschichtelektronik. Sie werden als dünne Materialschichten (Sub-Nanometer bis Mikrometer) auf großflächige Substrate aufgebracht. Die technologisch am weitesten fortgeschrittenen Anwendungen sind organische Leuchtdioden (OLEDs) und organische Photovoltaik (OPV). Zur weiteren Steigerung von Leistungsfähigkeit und Effizienz ist die genaue Modellierung elektronischer Prozesse in den Bauteilen von grundlegender Bedeutung. Für die erfolgreiche Optimierung von Bauteilen ist eine zuverlässige Charakterisierung und Validierung der elektronischen Materialeigenschaften gleichermaßen erforderlich. Außerdem eröffnet das Verständnis der Zusammenhänge zwischen Materialstruktur und -eigenschaften einen Weg für innovative Material- und Bauteilentwicklung. Im Rahmen dieser Dissertation werden zwei Methoden für die Materialcharakterisierung entwickelt, verfeinert und angewandt: eine neuartige Methode zur Messung der Ladungsträgerbeweglichkeit μ und eine Möglichkeit zur Bestimmung der Ionisierungsenergie IE oder der Elektronenaffinität EA eines organischen Halbleiters. Für die Beweglichkeitsmessungen wird eine neue Auswertungsmethode für raumladungsbegrenzte Ströme (SCLC) in unipolaren Bauteilen entwickelt. Sie basiert auf einer Schichtdickenvariation des zu charakterisierenden Materials. In einem Ansatz zur räumlichen Abbildung des elektrischen Potentials (\"potential mapping\", POEM) wird gezeigt, dass das elektrische Potential als Funktion der Schichtdicke V(d) bei einer gegebenen Stromdichte dem räumlichen Verlauf des elektrischen Potentials V(x) im dicksten Bauteil entspricht. Daraus kann die Beweglichkeit als Funktion des elektrischen Felds F und der Ladungsträgerdichte n berechnet werden. Die Auswertung ist modellfrei, d.h. ein Modell zum Angleichen der Messdaten ist für die Berechnung von μ(F, n) nicht erforderlich. Die Messung ist außerdem unabhängig von einer möglichen Injektionsbarriere oder einer Potentialstufe an nicht-idealen Kontakten. Die gemessene Funktion μ(F, n) beschreibt die effektive durchschnittliche Beweglichkeit aller freien und in Fallenzuständen gefangenen Ladungsträger. Dieser Zugang beschreibt den Ladungstransport in energetisch ungeordneten Materialien realistisch, wo eine klare Unterscheidung zwischen freien und Fallenzuständen nicht möglich oder willkürlich ist. Die Messung von IE und EA wird mithilfe temperaturabhängiger Messungen an Solarzellen durchgeführt. In geeigneten Bauteilen mit einem Mischschicht-Heteroübergang (\"bulk heterojunction\" BHJ) ist die Leerlaufspannung Voc im gesamten Messbereich oberhalb 180K eine linear fallende Funktion der Temperatur T. Es kann bestätigt werden, dass die Extrapolation zum Temperaturnullpunkt V0 = Voc(T → 0K) mit der effektiven Energielücke Egeff , d.h. der Differenz zwischen EA des Akzeptor-Materials und IE des Donator-Materials, übereinstimmt. Die systematische schrittweise Variation einzelner Bestandteile der Solarzellen und die Überprüfung des Einflusses auf V0 bestätigen die Beziehung V0 = Egeff. Damit kann die IE oder EA eines Materials bestimmt werden, indem man es in einem BHJ mit einem Material kombiniert, dessen komplementärer Wert bekannt ist. Messungen per Ultraviolett-Photoelektronenspektroskopie (UPS) und inverser Photoelektronenspektroskopie (IPES) werden damit bestätigt, präzisiert und ergänzt. Die beiden entwickelten Messmethoden werden auf organische Halbleiter aus kleinen Molekülen einschließlich Mischschichten angewandt. In Mischschichten aus Zink-Phthalocyanin (ZnPc) und C60 wird eine Löcherbeweglichkeit gemessen, die sowohl thermisch als auch feld- und ladungsträgerdichteaktiviert ist. Wenn das Mischverhältnis variiert wird, steigt die Löcherbeweglichkeit mit zunehmendem ZnPc-Anteil, während die effektive Energielücke unverändert bleibt. Verschiedene weitere Materialien und Materialmischungen werden hinsichtlich Löcher- und Elektronenbeweglichkeit sowie ihrer Energielücke charakterisiert, einschließlich bisher wenig untersuchter hochverdünnter Donator-Systeme. In allen Materialien wird eine deutliche Feldaktivierung der Beweglichkeit beobachtet. Die Ergebnisse ermöglichen eine verbesserte Beschreibung der detaillierten Funktionsweise organischer Solarzellen und unterstützen die künftige Entwicklung hocheffizienter und optimierter Bauteile.:1. Introduction 2. Organic semiconductors and devices 2.1. Organic semiconductors 2.1.1. Conjugated π system 2.1.2. Small molecules and polymers 2.1.3. Disorder in amorphous materials 2.1.4. Polarons 2.1.5. Polaron hopping 2.1.6. Fermi-Dirac distribution and Fermi level 2.1.7. Quasi-Fermi levels 2.1.8. Trap states 2.1.9. Doping 2.1.10. Excitons 2.2. Interfaces and blend layers 2.2.1. Interface dipoles 2.2.2. Energy level bending 2.2.3. Injection from metal into semiconductor, and extraction 2.2.4. Excitons at interfaces 2.3. Charge transport and recombination in organic semiconductors 2.3.1. Drift transport 2.3.2. Charge carrier mobility 2.3.3. Thermally activated transport 2.3.4. Diffusion transport 2.3.5. Drift-diffusion transport 2.3.6. Space-charge limited current 2.3.7. Recombination 2.4. Mobility measurement 2.4.1. SCLC and TCLC 2.4.2. Time of flight 2.4.3. Organic field effect transistors 2.4.4. CELIV 2.5. Organic solar cells 2.5.1. Exciton diffusion towards the interface 2.5.2. Dissociation of CT states 2.5.3. CT recombination 2.5.4. Flat and bulk heterojunction 2.5.5. Transport layers 2.5.6. Thin film optics 2.5.7. Current-voltage characteristics and equivalent circuit 2.5.8. Solar cell efficiency 2.5.9. Limits of efficiency 2.5.10. Correct solar cell characterization 2.5.11. The \"O-Factor\" 3. Materials and experimental methods 3.1. Materials 3.2. Device fabrication and layout 3.2.1. Layer deposition 3.2.2. Encapsulation 3.2.3. Homogeneity of layer thickness on a wafer 3.2.4. Device layout 3.3. Characterization 3.3.1. Electrical characterization 3.3.2. Sample illumination 3.3.3. Temperature dependent characterization 3.3.4. UPS 4. Simulations 5.1. Design of single carrier devices 5.1.1. General design requirements 5.1.2. Single carrier devices for space-charge limited current 5.1.3. Ohmic regime 5.1.4. Design of injection and extraction layers 5.2. Advanced evaluation of SCLC – potential mapping 5.2.1. Potential mapping by thickness variation 5.2.2. Further evaluation of the transport profile 5.2.3. Injection into and extraction from single carrier devices 5.2.4. Majority carrier approximation 5.3. Proof of principle: POEM on simulated data 5.3.1. Constant mobility 5.3.2. Field dependent mobility 5.3.3. Field and charge density activated mobility 5.3.4. Conclusion 5.4. Application: Transport characterization in organic semiconductors 5.4.1. Hole transport in ZnPc:C60 5.4.2. Hole transport in ZnPc:C60 – temperature variation 5.4.3. Hole transport in ZnPc:C60 – blend ratio variation 5.4.4. Hole transport in ZnPc:C70 5.4.5. Hole transport in neat ZnPc 5.4.6. Hole transport in F4-ZnPc:C60 5.4.7. Hole transport in DCV-5T-Me33:C60 5.4.8. Electron transport in ZnPc:C60 5.4.9. Electron transport in neat Bis-HFl-NTCDI 5.5. Summary and discussion of the results 5.5.1. Phthalocyanine:C60 blends 5.5.2. DCV-5T-Me33:C60 5.5.3. Conclusion 6. Organic solar cell characteristics: the influence of temperature 6.1. ZnPc:C60 solar cells 6.1.1. Temperature variation 6.1.2. Illumination intensity variation 6.2. Voc in flat and bulk heterojunction organic solar cells 6.2.1. Qualitative difference in Voc(I, T) 6.2.2. Interpretation of Voc(I, T) 6.3. BHJ stoichiometry variation 6.3.1. Voc upon variation of stoichiometry and contact layer 6.3.2. V0 upon stoichiometry variation 6.3.3. Low donor content stoichiometry 6.3.4. Conclusion from stoichiometry variation 6.4. Transport material variation 6.4.1. HTM variation 6.4.2. ETM variation 6.5. Donor:acceptor material variation 6.5.1. Donor variation 6.5.2. Acceptor variation 6.6. Conclusion 7. Summary and outlook 7.1. Summary 7.2. Outlook A. Appendix A.1. Energy pay-back of this thesis A.2. Tables and registers