Approved for public release; distribution is unlimited. / The goal of this research was to use Monte Carlo simulations to further develop the model that describes transport imaging by including a more realistic description of the generation region created by the incident electrons. Monte Carlo simulation can be used to determine the energy distribution in bulk materials due to the interaction with incident electrons. In the simulation, the incident electrons undergo both elastic and inelastic scattering events. Through these events, the energy of the electrons is transferred to the target materials. This deposited energy can generate electron-hole pairs and then, via recombination, photons. In the experimental work, these photons are measured by a CCD camera connected to an optical microscope in a scanning electron microscope (SEM). Monte Carlo simulations were performed for a range of target materials and compared to the luminescence distributions measured experimentally. The simulated energy distributions are always spatially narrower than the optical image from the SEM. We propose possible explanations that need to be evaluated: the relationship between deposited energy and final electron distributions in the target material and photon recycling, in which locally generated photons are reabsorbed to produce a wider luminescence distribution. Further experiments are proposed to identify the limiting factors determining the minimum luminescence distribution.

Approved for public release, distribution is unlimited / In this thesis, a series of experiments were performed to characterize the material properties of InGaAs/GaAs for use in a two-color quantum-well IR photodetector (QWIP) design. Results from room temperature studies using cathodoluminescence and photoluminescence indicated light emission at 858 nm and 1019 nm from GaAs and InGaAs, respectively. Using a direct transport imaging technique, an edge dislocation pattern was observed and shown to be confined to the InGaAs layer of the material. A dislocation density measurement was performed and was shown to be less than 2000 lines/cm. Quantitative intensity level measurements indicated fluctuation in the region of dislocations to be less than 30% of the signal to background level. Finally, a spot mode study using the direct transport imaging method was performed to evaluate the feasibility of using this technique for contact-less diffusion length measurements. / Civilian, Department of Air Force