Topological Insulator (TI) is new classes of materials with gapless surface states and insulating bulk. The topological connection can be traced back to the discovery of Integer Quantum Hall Effect in 1980. In the last decade, new categories of topological insulators were predicted and later discovered, that have gained a lot of attraction for room-temperature applications. Since the experimental observation of single Dirac cone on the surface states of Bismuth selenide (Bi2Se3) in 2009, it has emerged as the prototype. Bismuth Selenide has one of the highest bulk band gaps of 0.3 eV among all TI materials. While its single crystal properties are well documented, thin films are producing equally exciting discoveries. In this work, Bi2Se3 thin films were synthesized using magnetron sputtering method and a diverse set of physical properties, such as structural, optical, and electronic, are investigated. In particular, properties of few-layer (ultra-thin) Bi2Se3 thin films are studied. Optical properties of Bi2Se3 was particularly revealing. We observed a sharp increase (blue shift) in the bulk band gap of Bi2Se3 by almost 0.5 eV as it approached the two-dimensional limit. Strong thickness-dependent structural and transport properties were also observed.

High pressure, high magnetic field and low temperature techniques are required to investigate magnetic transitions and quantum critical behaviour in different ferromagnetic materials to elucidate how novel forms of superconductivity and other new states are brought about. In this project, several instruments for magneto-transport and neutron scattering measurements have been designed and built. They include inserts for a dilution refrigerator and pressure cells for resistivity, magnetic susceptibility and inelastic neutron scattering measurements. The technical drawings of the low temperature inserts and pressure cells were produced with Solid Edge computer-aided software and the performance and safety assessments were evaluated with the ANSYS finite element analysis package. The pressure cells developed include diamond anvil cells, piston cylinder cells and some auxiliary equipment. Pressure effects on the physical properties such as the electrical resistivity and magnetic ordering of some ferromagnetic materials were studied with the equipment developed. A two-axis rotating stage was developed and deployed with a dilution refrigerator combined within a superconducting magnet to measure various physical properties as a function of the orientation of the sample with respect to applied field at sub-Kelvin temperature. The rotating stage is made of Beryllium Copper (BeCu) alloy. In order to avoid the entanglement of the wires, custom-designed “flexi cables” - copper tracks printed on a Kapton foil with a yield of nearly 100% - to work with the rotating stage were manufactured. The performance of the rotating stage has been demonstrated by a quantum oscillation in the electrical resistivity study of a high field ferromagnetic superconductor URhGe. A miniature diamond anvil cell based on the turnbuckle principle has been designed. The cell, made of BeCu alloy, is 7mm in length and 7mm in diameter. It has been shown to reach a maximum pressure of 10 GPa with diamond anvils with 800 μm culets. The small dimensions of the cell allow it to fit into the existing sample environment such as Physical Properties Measurement System (PPMS) and Magnetic Properties Measurement System (MPMS) from Quantum Design, USA, and onto the customized two-axis rotating stage built for the dilution fridge. It also thermalizes rapidly allowing rapid cooling and heating during the experiments. The cell can be used to make both resistivity and magnetic susceptibility measurements. To ensure the hydrostaticity of the pressure around the sample in the turnbuckle cell, a gearbox was designed for cryogenic loading of liquid argon and room temperature gas loading of either helium or argon at a loading pressure of up to 0.3 GPa. Pressure effects on the Curie temperature of a PrNi ferromagnet were studied in a diamond anvil cell. Four-probe resistance measurements under pressures up to 9 GPa were carried out in a PPMS. The possibility of tuning the physical properties of the material by altering the pressures has been demonstrated. By analysing the results of the electrical resistivity measurements under pressures, it was concluded that the Curie temperature of PrNi increases with pressure at the rate of 0.85 K per GPa. The quantity ∆(δρ/δτ)which reflects some part of the entropy change also increases with pressure. The expected quantum critical point has not been observed in this material up to 9 GPa. A large volume high-pressure piston-cell for inelastic neutron scattering measurements has been designed and can reach a pressure of up to 1.8 GPa with a sample volume in excess of 400 mm3. The dimension of the part of the cell exposed to the neutron beam has been optimized to minimize the attenuation of the neutron beam. The novel design of the piston seal also eliminates the use of a sample container, which makes it possible to accommodate larger samples and reduces the absorption. The pressure in the cell is measured by a manganin pressure gauge placed next to the sample. The performance of the cell was illustrated by an inelastic neutron scattering study of UGe2.

京都大学 / 新制・課程博士 / 博士(理学) / 甲第23457号 / 理博第4751号 / 新制||理||1681(附属図書館) / 京都大学大学院理学研究科化学専攻 / (主査)准教授 前里 光彦, 教授 北川 宏, 教授 竹腰 清乃理 / 学位規則第4条第1項該当 / Doctor of Science / Kyoto University / DGAM

The concept of the unit sediment graph is important and useful in the study of non-point source pollutant transport, in the estimation of sediment yield and in the design of sediment basins. At the present time, a physically sound method of deriving unit sediment graphs for ungauged small watersheds is not available. Based on synthetic principles as well as linear and time-invariant principles, applied to the systems approach of hydrology, a synthetic model has been developed to derive the unit sediment graph and to generate the sediment graph for an ungauged watershed. The model is limited to the generation of single peak sediment graphs where the sediment particle sizes of interest range from 0.002 mm to 1.0 mm. Seven small watersheds located in the lower Potomac River Basin were selected for this study. For each watershed about 12 storm events were included in the study. Available hourly rainfall and streamflow data were collected and used for model calibration. Results of both"spatial" and"temporal" verification show that agreement between the synthetic and actual sediment graphs is fairly good. A new rigorous definition regarding the unit sediment graph has been established. The study is based on a one-hour unit sediment graph which is defined as the direct sediment graph resulting from 1 unit of effective sediment yield of a storm of 1-hour duration generated uniformly over the basin at a uniform rate. Thus, the one-hour sediment graph of a storm for a specified watershed can be generated by convolving the one-hour unit sediment graph with the effective sediment erosion of one hour duration provided that the rainfall record and characteristics of that watershed are known. / Ph. D.

Železo-rhodium (FeRh) je látka procházející magnetickou fázovou přeměnou prvního druhu z antiferomagnetické (AF) do feromagnetické (FM) fáze, ke které dochází při zahřátí materiálu nad teplotu fázové přeměny nebo působením dostatečně velkého magnetického pole. Tato fázová přeměna je mimo jiné provázena výraznou změnou entropie, magnetizace a elektrického odporu, přičemž její tvar a poloha teploty přeměny je silně závislá na stechiometrii krystalu, na příměsích, tlaku a v případě tenkých vrstev na napjatosti vrstvy způsobené substrátem. Tato práce se zaměřuje na studium magnetotransportních vlastností drátů připravených z tenkých FeRh vrstev rostlých na substrátech indukujících různou napjatost vrstvy. Jedním z hlavních jevů studovaných v této práci je anizotropní magnetorezistance (AMR) projevující se změnou odporu pro různé natočení magnetických momentů v látce vůči směru elektrického proudu. AMR byla studována jak ve FM fázi, tak i v AF fázi FeRh. Byla změřena hodnota AMR ve vysokoteplotní FM fázi a objeveno neočekávané chování AMR ve zbytkové FM fázi v nízkoteplotním stavu. Dále byla pozorována výrazná závislost AMR na orientaci měřených segmentů vůči krystalografickým směrům FeRh.

This thesis presents several experiments, generally aiming at visualising the ballistic and topological transport on the high-mobility graphene/boron nitride heterostructure using the scanning gate microscope. For the first experiment, we use the scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and in a weak perpendicular magnetic field. We employ a magnetic focusing transport configuration to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collector probe. The local potential generated by the scanning tip in the vicinity of the carriers deflects their trajectories, modifying the proportion of carriers focused into the collector. By measuring the voltage at the collector while scanning the tip, we are able to obtain images with arcs that are consistent with the expected cyclotron motion. We also demonstrate that the tip can be used to redirect misaligned carriers back to the collector. For the second experiment, we investigate the graphene van der Waals structures formed by aligning monolayer graphene with insulating layers of hexagonal boron nitride which exhibit a moiré superlattice that is expected to break sublattice symmetry. However, despite an energy gap of several tens of millielectronvolts opening in the Dirac spectrum, electrical resistivity remains lower than expected at low temperature and varies between devices. While subgap states are likely to play a role in this behaviour, their precise nature is still unclear in the community. We therefore perform a scanning gate microscopy study of graphene moiré superlattice devices with comparable activation energy but with different charge disorder levels. In the device with higher charge impurity ($\sim$ 10$^-$ cm$^{-2}$) and lower resistivity ($\sim$ 10 k$\Omega$) at the Dirac point we observe scanning gate response along the graphene edges. Combined with simulations, our measurements suggest that enhanced edge doping is responsible for this effect. In addition, a device with low charge impurity ($\sim$ 10$^{9}$ cm$^{-2}$) and higher resistivity ($\sim$ 100 k$\Omega$) shows subgap states in the bulk. Our measurements provide alternative model to the prevailing theory in the literature in which the topological bandstructures of the graphene moiré superlattices entail an edge currents shunting the insulating bulk. In the third experiment, we continue our study in the graphene moir$\acute e$ superlattices with the newly reported non-local Hall signals at the main Dirac point. It has been associated with the non-zero valley Berry curvature due to the gap opening and the nonlocal signal has been interpreted as the signature of the topological valley Hall effects. However, the nature of such signal is still disputed in the community, due to the vanishing density of states near the Dirac point and the possible topological edge transport in the system. Various artificial contribution without a topological origin of the measurement scheme has also been suggested. In connection to the second experiment, we use the scanning gate microscope to image the non-local Hall resistance as well as the local resistance in the current path. By analysing the features in the two sets of images, we find evidence for topological Hall current in the bulk despite a large artificial components which cannot be distinguished in global transport measurement. In the last experiment, we show the development of a radio-frequency scanning impedance microscopy compatible with the existing scanning gate microscopy and the dilution refrigerator. We detailed the design and the implementation of the radio-frequency reflectometry and the specialised tip holder for the integration of the tip and the transmission lines. We demonstrate the capability of imaging local impedance of the sample by detecting the mechanical oscillation of the tip, the device topography, and the Landau levels in the quantum Hall regime at liquid helium temperature and milli-Kelvin temperature.

L'étude du déplacement des parois de domaines magnétiques au moyen d'un courant électrique, par couple de transfert de spin, a généré beaucoup d'intérêt ces dernières années, notamment depuis que de nouveaux dispositifs de mémoires magnétiques utilisant cet effet ont été proposés. Récemment, un nouveau mécanisme capable de propager les parois sous courant avec une grande efficacité a été mis en évidence dans les matériaux tri-couches à anisotropie perpendiculaire et à fort couplage spin-orbite. La compréhension de ce mécanisme, appelé couple de spin-orbite, reste néanmoins loin d'être acquise, tout comme son effet sur la propagation des parois de domaines.L'objectif de ce travail de thèse était d'étudier l'influence de ce couple de spin-orbite sur la dynamique des parois. Pour cela, j'ai étudié expérimentalement le déplacement de paroi sous l'action d'un courant et d'un champ magnétique dans une tri-couche de Pt/Co/AlOx en présence d'un champ magnétique planaire, utilisé pour modifier la structure interne de la paroi et ainsi moduler l'action du couple de spin-orbite sur la dynamique de celle-ci. Ce travail a permis de mettre en évidence l'existence d'un effet asymétrique dans la dynamique de la paroi pour ce type de système.Pour expliquer ce résultat, nous avons proposé une nouvelle structure de paroi dans les matériaux ultra-minces à anisotropie perpendiculaire, résultant de l'interaction Dzyaloshinskii-Moriya. En combinant des calculs analytiques et des simulations micro-magnétiques, la dynamique d'une telle paroi a été étudiée et comparée aux résultats expérimentaux. Enfin, toujours dans le but d'expliquer l'effet asymétrique observé expérimentalement, une seconde interprétation basée sur la présence d'un mécanisme d'amortissement anisotrope a également été proposée. / The study of current-induced magnetic domain wall motion through spin transfer torque has attracted a lot of attention in recent years, especially since new magnetic memories devices based on this effect have been proposed. Recently, a new mechanism allowing for highly efficient current-induced domain wall motion has been discovered in ultrathin asymmetric materials with perpendicular magnetic anisotropy and high spin-orbit coupling. However this mechanism, named spin-orbit torque, and its effect on domain wall motion are not yet well understood.The objective of this work was to study the influence of this spin-orbit torque on domain wall motion. For that, I have studied field- and current-induced domain wall motion in Pt/Co/AlOx trilayer, in the presence of an in-plane magnetic field. This work allowed highlighting the existence of an asymmetric effect in the domain-wall dynamics of this system.In order to explain this result, we have proposed a new kind of domain wall structure, resulting from Dzyaloshinskii-Moriya interaction in materials with perpendicular magnetic anisotropy and high spin-orbit coupling. Using analytic calculations and micro-magnetic simulations, this domain wall dynamics has been studied and compared to the experimental results. Finally, a second approach based on the presence of an anisotropic damping mechanism has also been proposed to explain the asymmetric effect observed experimentally.

Graphene is a material suitable for electronic applications including sensors and biosensors operating in atmospheric conditions and at varying relative humidities. This work concerns the charge diffusion in Hall bar shaped graphene based field effect transistor that is simultaneously investigated by Kelvin probe force microscopy and macroscopic transport measurement. Furthemore it studies the possibilities of graphene Hall bar modification by local anodic oxidation, local cathodic hydrogenation and mechanical lithography.