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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Defect studies in insulators using ion beam techniques

Arafah, D-E. M. January 1984 (has links)
No description available.
2

Exploration into novel properties of ultra-high concentration hydrogen doped rutile-TiO₂ / 超高濃度水素ドーピングによるrutile-TiO2の新規物性の探究

LIM, GYEONG CHEOL 24 September 2021 (has links)
京都大学 / 新制・課程博士 / 博士(理学) / 甲第23457号 / 理博第4751号 / 新制||理||1681(附属図書館) / 京都大学大学院理学研究科化学専攻 / (主査)准教授 前里 光彦, 教授 北川 宏, 教授 竹腰 清乃理 / 学位規則第4条第1項該当 / Doctor of Science / Kyoto University / DGAM
3

Etude du comportement de l'hélium et des défauts lacunaires dans le tungstène / Study of the behavior of helium and vacancy-type defects in tungsten

Lhuillier, Pierre-Emile 10 November 2010 (has links)
Dans les réacteurs à fusion, le tungstène subira des contraintes sévères dont, l’irradiation neutronique induisant la création de défauts ponctuels, et l’implantation d’hélium. La compréhension du comportement synergique des défauts lacunaires et de l’hélium est cruciale pour modéliser le comportement des composants en tungstène des futurs réacteurs à fusion thermonucléaire.Cette étude utilise la spectroscopie d’annihilation des positons (PAS) pour déterminer la nature et l’évolution en température des défauts d’implantation et l’analyse par réaction nucléaire (NRA)couplée ponctuellement à la microscopie électronique pour suivre le comportement de l’hélium.Les défauts générés dépendent des paramètres d’implantation (nature des ions, énergie, fluence). Par implantation d’3He à 800 keV, des monolacunes ont été créées et sont mobiles entre 473 et 623 K.L’augmentation de la concentration initiale en monolacunes décale le seuil de migration vers les basses températures. Des implantations à fort dpa (Fe 10 MeV) génèrent des amas lacunaires. Les impuretés jouent un rôle prépondérant sur le comportement en température des défauts.Le comportement de l’hélium a été étudié sous trois conditions d’implantation différentes. Les implantations à basse énergie (0,32 keV) montrent la création de complexes hélium-lacune par mutation. Les implantations à 60 keV mettent en évidence la compétition entre la migration, à basse fluence et le piégeage de l’hélium, à haute fluence. Finalement, des implantations à haute énergie(500 keV) renseignent sur l’influence de la microstructure sur la distribution des bulles d’hélium. / In fusion reactors, tungsten suffers severe constraints such as an intense neutron irradiation which induces the creation of point defects, and implantation of helium. Understanding the interactions between point defects and helium is crucial to model the behavior of tungsten components for future nuclear fusion applications.This study rely on the use of Positron Annihilation Spectroscopy (PAS) to determine the nature and thermal evolution of implantation-induced defects, and Nuclear Reaction Analysis (NRA) occasionally coupled with electron microscopy to investigate the behavior of helium.The nature of implantation-induced defects depends on the implantation parameters (type of ion,energy, fluence). Implantations of 3He at 800 keV, lead to the creation of monovacancies which aremobile between 473 and 623 K. Increasing the initial concentration of monovacancies shifts themigration threshold toward low temperature. Implantations with high level of damage (Fe 10 MeV) generate vacancy clusters. The impurities play a dominant role on the thermal behavior of defects. The behavior of helium was studied under three different implantation conditions. Implantations at low energy - 0.32 keV - show the creation of helium-vacancy complex by mutation. Implantations at 60keV show the competition between migration - at low fluence - and trapping of helium - at high fluence. Finally, high energy implantations (500 keV) provide information about the influence of microstructure on the distribution of helium bubbles.
4

Ion Beam Analysis of First Wall Materials Exposed to Plasma in Fusion Devices

Petersson, Per January 2010 (has links)
One major step needed for fusion to become a reliable energy source is the development of materials for the extreme conditions (high temperature, radioactivity and erosion) caused by hot plasmas. The main goal of the present study is to use and optimise ion beam methods (lateral resolution and sensitivity) to characterise the distribution of hydrogen isotopes that act as fuel. Materials from the test reactors JET (Joint European Torus), TEXTOR (Tokamak Experiment for Technology Oriented Research) and Tore Supra have been investigated. Deuterium, beryllium and carbon were measured by elastic recoil detection analysis (ERDA) and nuclear reaction analysis (NRA). To ensure high 3D spatial resolution a nuclear microbeam (spot size <10 µm) was used with 3He and 28Si beams. The release of hydrogen caused by the primary ion beam was monitored and accounted for. Large variations in surface (top 10 µm) deuterium concentrations in carbon fibre composites (CFC) from Tore Supra and TEXTOR was found, pointing out the importance of small pits and local fibre structure in understanding fuel retention. At deeper depths into the CFC limiter tiles from Tore Supra, deuterium rich bands were observed confirming the correlation between the internal material structure and fuel storage in the bulk. Sample cross sections from thick deposits on the JET divertor showed elemental distributions that were dominantly laminar although more complex structures also were observed. Depth profiles of this kind elucidate the plasma-wall interaction and material erosion/deposition processes in the reactor vessel. The information gained in this thesis will improve the knowledge of first wall material for the next generation fusion reactors, concerning the fuel retention and the lifetime of the plasma facing materials which is important for safety as well as economical reasons.
5

Estabilidade de filmes de GeOxNy crescidos termicamente sobre Ge

Copetti, Gabriela January 2015 (has links)
A instabilidade térmica do óxido de germânio (GeO2) é um obstáculo à utilização de germânio (Ge) como material semicondutor em dispositivos MOSFET. Essa instabilidade é induzida por vacâncias de oxigênio originadas de uma reação interfacial entre o óxido e o substrato. Essas vacâncias são responsáveis pela dessorção de GeO da superfície do óxido e pela deterioração das propriedades elétricas do transistor. Estudos sugerem que a incorporação de nitrogênio no GeO2 aumenta a sua estabilidade. Nesta dissertação, filmes de oxinitreto de germânio (GeOxNy) foram crescidos termicamente sobre Ge, utilizando gás óxido nítrico (NO), em um forno aquecido resistivamente. Técnicas de análise por feixe de íons, como espectrometria de retroespalhamento Rutherford e análise por reações nucleares, foram utilizadas para investigar o transporte atômico durante o crescimento dos filmes e o papel do nitrogênio na estabilização do óxido. Para a determinação da espessura, da densidade e da rugosidade de alguns filmes, foram realizadas medidas de reflectometria de raios X. Os resultados mostram que a incorporação de uma pequena quantidade de nitrogênio resulta em uma diminuição substancial na dessorção de GeO e na formação de uma barreira eficiente contra a oxidação adicional do substrato. Átomos de nitrogênio incorporados na estrutura do óxido podem reduzir a difusividade das vacâncias de oxigênio, levando ao aumento da estabilidade térmica. / The thermal instability of germanium oxide (GeO2) hinders the use of germanium (Ge) as the semiconductor material in MOSFET devices. This instability is induced by oxygen vacancies originated from the interfacial reaction between the oxide and the substrate. These vacancies are responsible for GeO desorption from the oxide surface and deterioration of the device’s eletrical properties. Previous studies suggest that nitrogen incorporation increases the oxide’s stability. In this dissertation, germanium oxynitride (GeOxNy) films were thermally grown on Ge using nitric oxide (NO) gas, in a conventional resistively heated furnace. Ion beam analysis tecniques, such as Rutherford backscattering spectrometry and nuclear reaction analysis, were used to investigate atomic transport during thermal growth and the role of nitrogen in the improved stability. Film thickness, density and roughness were obtained through X-ray reflectometry. Results show that the incorporation of a small amount of nitrogen yields a substantial decrease in GeO desorption and the formation of a strong barrier against further oxidation of the substrate. Nitrogen atoms incorporated into the oxide structure may decrease oxygen vacancy diffusivity, leading to enhanced thermal stability.
6

Analyse quantitative de la concentration d'hydrogène jouant un rôle dans la fragilisation par l'hydrogène des aciers haute résistance.

Larochelle, Jean-Simon 07 1900 (has links)
No description available.
7

Estabilidade de filmes de GeOxNy crescidos termicamente sobre Ge

Copetti, Gabriela January 2015 (has links)
A instabilidade térmica do óxido de germânio (GeO2) é um obstáculo à utilização de germânio (Ge) como material semicondutor em dispositivos MOSFET. Essa instabilidade é induzida por vacâncias de oxigênio originadas de uma reação interfacial entre o óxido e o substrato. Essas vacâncias são responsáveis pela dessorção de GeO da superfície do óxido e pela deterioração das propriedades elétricas do transistor. Estudos sugerem que a incorporação de nitrogênio no GeO2 aumenta a sua estabilidade. Nesta dissertação, filmes de oxinitreto de germânio (GeOxNy) foram crescidos termicamente sobre Ge, utilizando gás óxido nítrico (NO), em um forno aquecido resistivamente. Técnicas de análise por feixe de íons, como espectrometria de retroespalhamento Rutherford e análise por reações nucleares, foram utilizadas para investigar o transporte atômico durante o crescimento dos filmes e o papel do nitrogênio na estabilização do óxido. Para a determinação da espessura, da densidade e da rugosidade de alguns filmes, foram realizadas medidas de reflectometria de raios X. Os resultados mostram que a incorporação de uma pequena quantidade de nitrogênio resulta em uma diminuição substancial na dessorção de GeO e na formação de uma barreira eficiente contra a oxidação adicional do substrato. Átomos de nitrogênio incorporados na estrutura do óxido podem reduzir a difusividade das vacâncias de oxigênio, levando ao aumento da estabilidade térmica. / The thermal instability of germanium oxide (GeO2) hinders the use of germanium (Ge) as the semiconductor material in MOSFET devices. This instability is induced by oxygen vacancies originated from the interfacial reaction between the oxide and the substrate. These vacancies are responsible for GeO desorption from the oxide surface and deterioration of the device’s eletrical properties. Previous studies suggest that nitrogen incorporation increases the oxide’s stability. In this dissertation, germanium oxynitride (GeOxNy) films were thermally grown on Ge using nitric oxide (NO) gas, in a conventional resistively heated furnace. Ion beam analysis tecniques, such as Rutherford backscattering spectrometry and nuclear reaction analysis, were used to investigate atomic transport during thermal growth and the role of nitrogen in the improved stability. Film thickness, density and roughness were obtained through X-ray reflectometry. Results show that the incorporation of a small amount of nitrogen yields a substantial decrease in GeO desorption and the formation of a strong barrier against further oxidation of the substrate. Nitrogen atoms incorporated into the oxide structure may decrease oxygen vacancy diffusivity, leading to enhanced thermal stability.
8

Estabilidade de filmes de GeOxNy crescidos termicamente sobre Ge

Copetti, Gabriela January 2015 (has links)
A instabilidade térmica do óxido de germânio (GeO2) é um obstáculo à utilização de germânio (Ge) como material semicondutor em dispositivos MOSFET. Essa instabilidade é induzida por vacâncias de oxigênio originadas de uma reação interfacial entre o óxido e o substrato. Essas vacâncias são responsáveis pela dessorção de GeO da superfície do óxido e pela deterioração das propriedades elétricas do transistor. Estudos sugerem que a incorporação de nitrogênio no GeO2 aumenta a sua estabilidade. Nesta dissertação, filmes de oxinitreto de germânio (GeOxNy) foram crescidos termicamente sobre Ge, utilizando gás óxido nítrico (NO), em um forno aquecido resistivamente. Técnicas de análise por feixe de íons, como espectrometria de retroespalhamento Rutherford e análise por reações nucleares, foram utilizadas para investigar o transporte atômico durante o crescimento dos filmes e o papel do nitrogênio na estabilização do óxido. Para a determinação da espessura, da densidade e da rugosidade de alguns filmes, foram realizadas medidas de reflectometria de raios X. Os resultados mostram que a incorporação de uma pequena quantidade de nitrogênio resulta em uma diminuição substancial na dessorção de GeO e na formação de uma barreira eficiente contra a oxidação adicional do substrato. Átomos de nitrogênio incorporados na estrutura do óxido podem reduzir a difusividade das vacâncias de oxigênio, levando ao aumento da estabilidade térmica. / The thermal instability of germanium oxide (GeO2) hinders the use of germanium (Ge) as the semiconductor material in MOSFET devices. This instability is induced by oxygen vacancies originated from the interfacial reaction between the oxide and the substrate. These vacancies are responsible for GeO desorption from the oxide surface and deterioration of the device’s eletrical properties. Previous studies suggest that nitrogen incorporation increases the oxide’s stability. In this dissertation, germanium oxynitride (GeOxNy) films were thermally grown on Ge using nitric oxide (NO) gas, in a conventional resistively heated furnace. Ion beam analysis tecniques, such as Rutherford backscattering spectrometry and nuclear reaction analysis, were used to investigate atomic transport during thermal growth and the role of nitrogen in the improved stability. Film thickness, density and roughness were obtained through X-ray reflectometry. Results show that the incorporation of a small amount of nitrogen yields a substantial decrease in GeO desorption and the formation of a strong barrier against further oxidation of the substrate. Nitrogen atoms incorporated into the oxide structure may decrease oxygen vacancy diffusivity, leading to enhanced thermal stability.
9

Comportement de l’hélium implanté dans le carbure de bore B4C / Helium behaviour in implanted B4C boron carbide

Motte, Vianney 08 November 2017 (has links)
Le carbure de bore B4C est une céramique couramment utilisée comme absorbant neutronique pour la régulation de la puissance des réacteurs nucléaires. Les réactions d’absorption neutronique, de type (n,α) sur l’isotope bore-10, conduisent à la production de grandes quantités d’hélium (jusqu’à 1022.cm-3). Il en résulte du gonflement induit par la formation de bulles hautement pressurisées, puis de la microfissuration. L’analyse de la littérature montre que les mécanismes de diffusion de l’hélium et les premières étapes de la formation des bulles sont mal connus. L’objectif de notre étude est d’étudier le comportement de l’hélium dans le carbure de bore, en réalisant une analyse paramétrique. Pour cela, des échantillons de B4C fritté à partir de différentes poudres ont été implantés en hélium dans des accélérateurs d’ions à différentes concentrations et températures, ce afin de simuler l’hélium produit en réacteur. Les analyses se sont ensuite principalement appuyées sur deux techniques de caractérisation : L’analyse par réactions nucléaires ou NRA (Nuclear Reaction Analysis) qui est une technique d’analyse par faisceau d’ions. La réaction 3He(d,4He)1H utilisée permet d’obtenir des profils d’hélium dans le matériau. La Microscope Electronique en Transmission (MET) qui permet d’observer les amas potentiels d’hélium dans le matériau. Nous avons tout d’abord mis en évidence l’influence de la concentration d’hélium implanté : plus elle est élevée, plus la densité d’amas dans la zone implantée est élevée ; puis celle de de la température d’implantation : plus cette dernière est élevée, plus la température seuil de germination des amas est élevée et leur densité réduite. Nous en avons déduit que ces différences étaient dues à l’influence de l’endommagement résiduel, plus faible à haute température. Des doubles implantations d’or et d’hélium ont confirmé que l’endommagement créé par les ions Au avait un effet significatif sur la germination des amas, en abaissant le seuil de température de leur apparition et en augmentant leur densité. Ensuite, nous avons mis en évidence le rôle des joints de grains qui se sont révélés être de véritables pièges pour hélium. Nous avons démontré que l’hélium ne diffuse pas dans ni à travers ces joints de grains jusqu’à des températures de l’ordre de 1200°C. Enfin, l’élargissement des profils d’hélium après traitements thermiques, dans la gamme de température 600-800°C, a permis de déterminer un coefficient de diffusion apparent de l’hélium dans le B4C, paramètre inconnu dans la littérature, ainsi qu’une énergie d’activation : D = D0.exp(-Ea/kT), avec D0 = 6,03x10- 3 x/ 2,5 cm2.s-1 et Ea = 2,03 ±0,18 eV. L’ensemble de ce travail a permis de mieux appréhender le comportement de l’hélium dans le carbure de bore qui sera utilisé dans les dispositifs de contrôle de la puissance et les protections neutroniques du réacteur ASTRID, projet français de réacteur à spectre neutronique rapide refroidi au sodium. Les résultats obtenus permettent ainsi de tirer des indications utiles à la conception des éléments absorbants neutroniques du réacteur / Boron carbide B4C is a ceramic commonly used as a neutron absorber to control the power of nuclear power plants. The neutron absorption reactions, (n,α) type on the boron-10 isotope, lead to the production of large quantities of helium (up to 1022.cm-3). This results to swelling induced by the formation of highly pressurized bubbles, followed by microcracking. Analysis of the literature shows that helium diffusion mechanisms and the early stages of bubble formation are poorly understood. The goal of our work is to study the behaviour of helium in boron carbide, by carrying out a parametric analysis. For this purpose, samples of B4C, sintered from different powders, were implanted in helium with ion accelerators at different concentrations and temperatures, in order to simulate the helium produced in the reactor. The analyses were then mainly based on two characterization techniques: Nuclear Reaction Analysis (NRA), which is an ion beam analysis technique. The 3He(d,4He)1H reaction used allows obtaining helium profiles in the material. The Transmission Electron Microscope (TEM), which allows observation of potential helium clusters in the material. We first demonstrated the influence of the concentration of implanted helium: the higher it is, the higher the density of clusters in the implanted area; then the influence of the implantation temperature: the higher it is, the higher the threshold temperature for cluster nucleation and the lower the density. We have deduced that these differences were due to the influence of the residual damage, which is lower at high temperature. Dual gold and helium implantations confirmed that damage caused by Au ions had a significant effect on cluster nucleation, lowering the temperature threshold of their occurrence and increasing their density. Next, we have highlighted the role of grain boundaries which have proved to be very efficient traps for helium. We have demonstrated that helium does not diffuse into these grain boundaries at temperatures up to 1200°C. Finally, the broadening of the helium profiles after heat treatments, in the temperature range 600-800°C, allowed us to determine an apparent diffusion coefficient of helium in B4C, still unknown in the literature: D = D0.exp (-Ea/kT), with D0 = 6.03x10-3 x/ 2.5 cm2.s-1 and Ea = 2.03 ± 0.18 eV. This work allowed us to better understand the behaviour of helium in boron carbide, which will be used in power control devices and neutron protections for the ASTRID reactor, a French sodium fast-neutron reactor project. The results thus allow obtaining useful indications for the design of the neutron absorber elements of the reactor
10

Material migration in tokamaks : Erosion-deposition patterns and transport processes

Weckmann, Armin January 2017 (has links)
Controlled thermonuclear fusion may become an attractive future electrical power source. The most promising of all fusion machine concepts is called a tokamak. The fuel, a plasma made of deuterium and tritium, must be confined to enable the fusion process. It is also necessary to protect the wall of tokamaks from erosion by the hot plasma. To increase wall lifetime, the high-Z metal tungsten is foreseen as wall material in future fusion devices due to its very high melting point. This thesis focuses on the following consequences of plasma impact on a high-Z wall: (i) erosion, transport and deposition of high-Z wall materials; (ii) fuel retention in tokamak walls; (iii) long term effects of plasma impact on structural machine parts; (iv) dust production in tokamaks. An extensive study of wall components has been conducted with ion beam analysis after the final shutdown of the TEXTOR tokamak. This unique possibility offered by the shutdown combined with a tracer experiment led to the largest study of high-Z metal migration and fuel retention ever conducted. The most important results are:   - transport is greatly affected by drifts and flows in the plasma edge; - stepwise transport along wall surfaces takes place mainly in the toroidal direction; - fuel retention is highest on slightly retracted wall elements; - fuel retention is highly inhomogeneous.   A broad study on structural parts of a tokamak has been conducted on the TEXTOR liner. The plasma impact does neither degrade mechanical properties nor lead to fuel diffusion into the bulk after 26 years of duty time. Peeling deposition layers on the liner retain fuel in the order of 1g and represent a dust source. Only small amounts of dust are found in TEXTOR with overall low deuterium content. Security risks in future fusion devices due to dust explosions or fuel retention in dust are hence of lesser concern. / <p>QC 20170630</p>

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