The objective of the current work has been to develop a system which will allow continuous monitoring of areal mass density, lateral stress, and temperature during a process with real time presentation of results making possible either manual or automated control of the process. The system uses three quartz resonators of different crystallographic cuts (AT cut, BT cut and SC cut) in the same environment. The development of an algorithm to solve a system of equations representing a complete representation of the temperature characteristics of the three resonators is presented. This is followed by an analysis of the potential accuracy of the system and the limitations imposed by the assumptions made in the mathematical models of the system. Sputtering yields were verified using Rutherford backscattering analysis. Experimental apparatus including the physical mounting of the resonators in an experimental environment, details of the oscillator circuitry and frequency counter, and use of a personal computer for data acquisition and control are described. The results presented show, in addition to the mass change and lateral stress build-up which occur when sputtering a gold film with an argon ion beam, the radiation induced temperature rise and the radiation induced stress caused by temperature gradients. An experiment using beams of Sb+ at 50keV and Sb2+ at 100keV has been used to demonstrate the enhancement of sputtering yield that occurs when Au films are bombarded with monomers and dimers of Sb at the same energy per atom. Results are compared with simulations using both the TRIM program and molecular dynamics code.

At the Tandem accelerator in the Ångström laboratory, Uppsala, Rutherford backscattering spectrometry (RBS) is one of the methods used for thin film analysis, providing information on thickness and composition. The films are commonly grown on silicon substrates, whose crystal structure gives rise to channelling effects (a strong angular dependence in the intensity of the signal), which can cause faulty results. For other samples, channelling may also be used to get information on crystal structure and quality. This work demonstrates new functions to the existing software, aiming at minimizing these effects. The new methods have been tested by measurements both in channelling directions and in directions determined by the old method. In comparison with the earlier method the worst-case error is of order 80 %,commonly around 20 %, but it is possible to achieve an error which is not detectable. It is worth to note that the stated errors appear in tests oriented for maximum channelling, where effects without the new methods give an error corresponding to an apparent thin-film thickness almost 18 times that of the actual thickness. / Vid Tandemlabbet i Ångströmlaboratoriet, Uppsala, används bland annat Rutherford backscattering spectrometry (RBS) för att undersöka egenskaper, t.ex tjocklek och sammansättning, hos tunnfilmer som ofta är odlade på kiselsubstrat. Kiselkristallernas struktur ger upphov till kanaliseringseffekter, d.v.s starkt vinkelberoende intensitet, som i detta sammanhang kan ge felaktiga resultat. För andra prover kan kanaliseringseffekter användas för att få information om kristallstruktur och kvalitet. I det här arbetet demonstreras nyskrivna funktioner till befintlig mjukvara med syfte att minimera dessa effekter. De nya funktionerna har testats genom provtagningar i orienteringar som är gynnsamma och icke gynnsamma för kanalisering. Vid jämförelse med tidigare metoder ger de nya metoderna ett fel på i värsta fall ca. 80%, med bättre parametrar sjunker felet till ca 20 % och med rätt val av parametrar försvinner felet jämfört med tidigare metod. Värt att notera är att ovanstående maximala fel uppstår vid test orienterat för maximal kanalisering, där effekterna utan de nya metoderna ger ett fel på uppemot en faktor 18.

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<p><font face="Times-Roman"> <p align="left">The growth of the Internet has led to many interesting developments for both educational and commercial purposes. In this project an attempt was made to use the Internet for a research purpose to facilitate the determination of the thermal stability of diffusion barriers. Another purpose of this thesis is to investigate the teaching and training use of the Internet through the development of online interactive tools and activities as well as materials. The training aspects are mentioned as it is hoped that this thesis can serve as a form of documentation of the use of the Internet, while the central part was the determination of thermal stability of TiN, TaN and TiW diffusion <font face="Times-Roman">barriers on Ag.</font></p> </font></p>

The purpose of this study is to investigate the role of strain in the accumulation of crystalline defects created by ion irradiation. Previous studies state that strained Si1xGex is more easily amorphized by ion irradiation than unstrained, bulk Si in a periodic superlattice structure; however, the reason for preferential amorphization of the strained Si1xGex layer in the periodic structure of strained and unstrained layers is not well understood. In this study, various ion irradiations will be carried out on SiGe strained layer superlattices grown on (100)-orientation bulk Si by low temperature molecular beam epitaxy. The samples under investigation are 50 nm surface Si0:8Ge0:2/bulk Si and 50 nm surface Si/60 nm Si0:8Ge0:2/bulk Si. Defects will be created in both surface and buried SiGe strained layers by medium and high energy light ion irradiation. The amount of permanently displaced atoms will be quantified by channeling Rutherford backscattering spectrometry. The amorphization model, the path to permanent damage creation, of bulk Si and surface strained SiGe will be investigated. The strain in surface and buried Si0:8Ge0:2 layers will be measured by comparison to bulk Si with Rutherford backscattering spectrometry by a novel technique, channeling analysis by multi-axial Rutherford backscatter- ing spectrometry, and the limitations of measuring strain by this technique will be explored. Results of this study indicated that the amorphization model, the number of ion collision cascades that must overlap to cause permanent damage, of strained Si0:8Ge0:2 is similar to that of bulk Si, suggesting that point defect recombination is less efficient in strained Si0:8Ge0:2. Additionally, a surface strained Si0:8Ge0:2 is less stable under ion irradiation than buried strained Si0:8Ge0:2. Repeated analysis by multi-axial channeling Rutherford backscattering spectrometry, which requires high fluence of 2 MeV He ions, proved destructive to the surface strained Si0:8Ge0:2 layer.

<p><font face="Times-Roman"> <p align="left">The growth of the Internet has led to many interesting developments for both educational and commercial purposes. In this project an attempt was made to use the Internet for a research purpose to facilitate the determination of the thermal stability of diffusion barriers. Another purpose of this thesis is to investigate the teaching and training use of the Internet through the development of online interactive tools and activities as well as materials. The training aspects are mentioned as it is hoped that this thesis can serve as a form of documentation of the use of the Internet, while the central part was the determination of thermal stability of TiN, TaN and TiW diffusion <font face="Times-Roman">barriers on Ag.</font></p> </font></p>

abstract: Nickel-Copper metallization for silicon solar cells offers a cost effective alternative to traditional screen printed silver paste technology. The main objective of this work is to study the formation of nickel silicide contacts with and without native silicon dioxide SiO2. The effect of native SiO2 on the silicide formation has been studied using Raman spectroscopy, Rutherford backscattering spectrometry and sheet resistance measurements which shows that SiO 2 acts as a diffusion barrier for silicidation at low temperatures of 350°C. At 400°C the presence of SiO2 results in the increased formation of nickel mono-silicide phase with reduced thickness when compared to samples without any native oxide. Pre and post-anneal measurements of Suns Voc, photoluminescence and Illuminated lock in thermography show effect of annealing on electrical characteristics of the device. The presence of native oxide is found to prevent degradation of the solar cells when compared to cells without any native oxide. A process flow for fabricating silicon solar cells using light induced plating of nickel and copper with and without native oxide (SiO2) has been developed and cell results for devices fabricated on 156mm wafers have been discussed. / Dissertation/Thesis / Masters Thesis Materials Science and Engineering 2016

A new cluster tool for in situ real-time processing and depth-resolved compositional, structural and optical characterization of thin films at temperatures from -100 to 800 °C is described. The implemented techniques comprise magnetron sputtering, ion irradiation, Rutherford backscattering spectrometry, Raman spectroscopy and spectroscopic ellipsometry. The capability of the cluster tool is demonstrated for a layer stack MgO/ amorphous Si (~60 nm)/ Ag (~30 nm), deposited at room temperature and crystallized with partial layer exchange by heating up to 650°C. Its initial and final composition, stacking order and structure were monitored in situ in real time and a reaction progress was defined as a function of time and temperature.

The use of nuclear microprobe techniques including: Particle induced x-ray emission (PIXE) and Rutherford backscattering spectrometry (RBS) for elemental analysis and quantitative elemental imaging of biological samples is especially useful in biological and biomedical research because of its high sensitivity for physiologically important trace elements or toxic heavy metals. The nuclear microprobe of the Ion Beam Modification and Analysis Laboratory (IBMAL) has been used to study the enhancement in metal uptake of two different plants. The roots of corn (Zea mays) have been analyzed to study the enhancement of iron uptake by adding Fe (II) or Fe (III) of different concentrations to the germinating medium of the seeds. The Fe uptake enhancement effect produced by lacing the germinating medium with carbon nanotubes has also been investigated. The aim of this investigation is to ensure not only high crop yield but also Fe-rich food products especially from calcareous soil which covers 30% of world’s agricultural land. The result will help reduce iron deficiency anemia, which has been identified as the leading nutritional disorder especially in developing countries by the World Health Organization. For the second plant, Mexican marigold (Tagetes erecta), the effect of an arbuscular mycorrhizal fungi (Glomus intraradices) for the improvement of lead-phytoremediation of lead contaminated soil has been investigated. Phytoremediation provides an environmentally safe technique of removing toxic heavy metals (like lead), which can find their way into human food, from lands contaminated by human activities like mining or by natural disasters like earthquakes. The roots of Mexican marigold have been analyzed to study the role of arbuscular mycorrhizal fungi in enhancement of lead uptake from the contaminated rhizosphere.

Angular distributions and total yields of atoms sputtered from bismuth targets by normally incident 10 keV -50 keV Ne+ and Ar+ ions have been measured both experimentally and by computer simulation. Polycrystalline Bi targets were used for experimental measurements. The sputtered atoms were collected on high purity aluminum foils under ultra-high vacuum conditions, and were subsequently analyzed using Rutherford backscattering spectroscopy. The Monte-Carlo based SRIM code was employed to simulate angular distributions of sputtered Bi atoms and total sputtering yields of Bi to compare with experiment. The measured sputtering yields were found to increase with increasing projectile energy for normally incident 10 keV - 50 keV Ne+ and Ar+ ions. The shapes of the angular distributions of sputtered Bi atoms demonstrated good agreement between experiment and simulation in the present study. The measured and simulated angular distributions of sputtered Bi exhibited an over-cosine tendency. The measured value of the degree of this over-cosine nature was observed to increase with increasing incident Ne+ ion energy, but was not strongly dependent on incident Ar+ ion energy. The differential angular sputtering yield and partial sputtering yields due to Ar ion bombardment of an inhomogeneous liquid Bi:Ga alloy have been investigated, both experimentally and by computer simulation. Normally incident 25 keV and 50 keV beams of Ar+ were used to sputter a target of 99.8 at% Ga and 0.2 at% Bi held at 40° C in ultra-high vacuum (UHV), under which conditions the alloy is known to exhibit extreme Gibbsian surface segregation that produces essentially a monolayer of Bi atop the bulk liquid. Angular distributions of sputtered neutrals and partial sputtering yields obtained from the conversion of areal densities of Bi and Ga atoms on collector foils were determined. The Monte-Carlo based SRIM code was employed to simulate the experiment and obtain the angular distribution of sputtered components. The angular distribution of sputtered Ga atoms, originating from underneath the surface monolayer, was measured to be sharply peaked in angle about the surface normal direction compared to the Bi atoms originating from surface monolayer. The simulation study produced contradicting results, where the species originating from surface monolayer was strongly peaked around the surface normal compared to the species originating from beneath the surface monolayer.