The main aim of this thesis has been to contribute to the ongoing work with development of new diode-laser-based spectroscopic techniques and metho­do­lo­gies for sensitive detection of molecules in gas phase. The techniques under scrutiny are tunable diode laser absorption spectrometry (TDLAS) and Faraday modulation spectrometry (FAMOS). Conventional distributed-feedback (DFB) tele­communication diode lasers working in the near-infrared (NIR) region have been used for detection of carbon monoxide (CO) and temperature in hot humid media whereas a unique frequency-quadrupled external-cavity diode laser producing mW powers of continuous-wave (cw) light in the ultra violet (UV) region have been used for detection of nitric oxide (NO). A methodology for assessment of CO in hot humid media by DFB-TDLAS has been developed. By addressing a particular transition in its 2nd overtone band, and by use of a dual-fitting methodology with a single reference water spectrum for background correction, % concentrations of CO can be detected in media with tens of percent of H2O (≤40%) at T≤1000 °C with an accuracy of a few %. Moreover, using an ordinary DFB laser working in the C-band, a technique for assessment of the temperature in hot humid gases (T≤1000 °C) to within a fraction of a percent has been developed. The technique addresses two groups of lines in H2O that have a favorable temperature dependence and are easily accessed in a single scan, which makes it sturdy and useful for industrial applications. A technique for detection of NO on its strong electronic transitions by direct absorption spectrometry (DAS) using cw UV diode laser light has been deve­loped. Since the electronic transitions are ca. two or several orders of magnitude stronger than of those at various rotational-vibra­tional bands, the system is capable of detecting NO down to low ppb∙m concentrations solely using DAS. Also the FAMOS technique has been further developed. A new theoretical description expressed in terms of both the integrated line strength of the transition and 1st Fourier coefficients of a magnetic-field-modulated dispersive lineshape functions is presented. The description has been applied to both ro-vib Q-transitions and electronic transitions in NO. Simulations under different pressures and magnetic field conditions have been made that provide the optimum conditions for both cases. A first demonstration and characteri­zation of FAMOS of NO addressing its electronic transitions in the UV-region has been made, resulting in a detection limit of 10 ppb∙m. The characterization indicates that the technique can be significantly improved if optimum conditions can be obtained, which demonstrates the high potential of the UV-FAMOS technique.

La mesure des polluants fait l'objet depuis la fin du XXème siècle d'une attention toute particulière pour la préservation de la planète. Les espèces gazeuses, plus précisément le méthane, présent dans le MIR, possède des forces de raies très intenses, ce qui rend la technique plus sensible. La technique de détection de gaz utilisée durant ma thèse est choisie après une large comparaison entre différentes techniques appartenant à la SDLA. Cette technique est la technique QEPAS. Elle a montré depuis son invention en 2002, une grande sensibilité et sélectivité dans le domaine d'analyse de gaz. La source de lumière utilisée dans la QEPAS est une diode laser accordable (laser à SC), ce qui permet de rendre la technique plus sélective, en variant sa longueur d'onde d'émission en fonction du courant injecté et/ou température de régulation, pour se localiser sur une raie souhaitée à détecter. Le détecteur de la QEPAS est le diapason à quartz (QTF). Ce dernier est très sensible à la force minime appliquée par l'onde acoustique, ce qui rend la technique très sensible aux faibles concentrations. Plusieurs étapes de caractérisations sont exigées pour déterminer les caractéristiques de la diode laser et du QTF. Après le choix de la diode laser et du QTF, idéaux pour la spectroscopie, on passe à l'évaluation de la technique QEPAS dans le domaine d'analyse de gaz. Les limites de détection du méthane obtenues avec la technique QEPAS sont 0.8 ppmv et 400 ppbv à 2.3 µm avec un laser à Fabry-Pérot et un laser à cristaux photoniques, respectivement, et 100 ppbv à 3.3 µm avec un laser DFB.Ce travail a permis d'obtenir une technique performante (sensible, sélective, pas cher…), dans le domaine d'analyse de gaz. / The measurement of the pollutants is the subject since the late twentieth century especially in attention to protecting the planet. The gaseous species, specifically methane, present in the MIR, has strengths rays very intense, making the technique more sensitive.The detection technique of gas used during my PhD was chosen after an extensive comparison of different techniques belonging to the SDLA. This technique is the QEPAS technique. It has shown since its invention in 2002, a high sensitivity and selectivity in gas analysis. The light source used in the QEPAS is a tunable diode laser (Laser SC), thus making the technique more selectively, by varying the wavelength of emission as a function of injected current and / or control temperature to be located on a line desired to detect. The detector is QEPAS of quartz tuning fork (QTF). The latter is very sensitive to small force applied by the acoustic wave, which makes the technique very sensitive to low concentrations. Several steps are required characterization to determine the characteristics of the laser diode and the QTF. After choosing the laser diode and the QTF, ideal for spectroscopy, we pass to the evaluation of the technique QEPAS in gas analysis. The detection limits of methane obtained with the technique are QEPAS 0.8 ppmv and 400 ppbv to 2.3 microns with a Fabry-Perot laser and a photonic crystal laser, respectively, and 100 ppbv to 3.3 microns with a DFB laser.This work has provided a powerful technique (sensitive, selective, cheap ...) in gas analysis.

L'objectif de cette thèse est de fournir une meilleure compréhension des différents phénomènes physiques liés aux microplasmas/microdécharges. Pour cela, des matrices de microréacteurs sur silicium ont été étudiées. De nombreuses configurations ont été construites de manière à analyser l’influence de chaque paramètre physique sur le fonctionnement de ces dispositifs. Le présent travail porte sur l'élaboration et la caractérisation de dispositifs micro-décharge à base de silicium. Dans ce travail de thèse, les régimes de courant continu (DC) et de courant alternatif (AC) sont étudiés en utilisant des configurations de décharges différentes. Pour la fabrication de ces réacteurs, nous sommes partis de wafers de Silicium que nous avons structurés et traités en salle blanche. La technologie de fabrication utilisée est compatible avec les méthodes de fabrication de dispositifs CMOS. Les microréacteurs sont constitués d’électrodes de nickel et de silicium séparés par une couche diélectrique de SiO2 de 6 μm d’épaisseur. L’épaisseur du diélectrique est ici beaucoup plus faible que celle des microréacteurs étudiés jusqu’à présent. Les dispositifs sont constitués de cavités de 25 à 150 microns de diamètre. Les essais de microdécharge ont été effectués dans des gaz inertes à une pression comprise entre 100 et 1000 Torrs. Nous avons d’abord étudié les phénomènes d’allumage et d’extinction à partir de microdispositifs monocavité en alumine. Puis, nous avons étudié le fonctionnement en DC/AC de microréacteurs en silicium comportant un nombre de cavité compris entre 1 et1024. Les caractéristiques des microdécharges ont été étudiées grâce à des mesures électriques, des mesures de spectroscopie d'émission optique (OES), de spectroscopie d’absorption à diode laser (DLAS) et de spectroscopie d'émission optique résolue en temps (PROES). Ces différents diagnostics nous ont permis de mettre en évidence les phénomènes d’allumage, d’extinction, d’instabilité et les mécanismes de défaillance de nos microdispositifs. Ce travail de thèse a permis de tester les performances et les limites technologiques des matrices de microdécharges sur silicium. Une attention particulière a été portée sur leur durée de vie. / The objective of this thesis is to provide a better understanding of various physical phenomena related to microplasmas/microdischarges. For this purpose, arrays of microreactors on silicon were studied. Different array configurations were fabricated to analyse the influence of each parameter on the physical operation of these devices. The present work focuses on the development and characterisation of micro-discharge devices based on silicon. In this thesis, direct current (DC) and alternating current (AC) regimes are studied using different discharge configurations. For the fabrication of these reactors, Silicon wafers are structured and processed in a cleanroom. Fabrication technology used is compatible with the CMOS technology. The microreactors are fabricated with nickel and silicon electrodes, separated by a dielectric layer of SiO2 with a thickness of 6 μm. The thickness of the dielectric is much lower here than the microreactors studied so far. The devices consist of cavities with 25 to 150 μm in diameter. Experiments of the microdischarges are performed in inert gases at a pressure between 100 and 1000 Torr. We first studied the phenomena of ignition and extinction for the microdevices based on alumina. Then, we studied the microreactors based on silicon containing 1 to 1024 cavities under DC and AC regimes. Characteristics of microdischarges were studied by electrical measurements, measurements of optical emission spectroscopy (OES), laser diode absorption spectroscopy (DLAS) and phase resolved optical emission spectroscopy (PROES). These diagnostics allowed us to investigate the phenomena of ignition, extinction, instability and failure mechanisms of the microplasma devices. This thesis work allowed testing the performance and technological limitations of the silicon based microdischarge arrays. Particular attention was paid to their life time.

The objective of this thesis is to provide a better understanding of various physical phenomena related to microplasmas/microdischarges. For this purpose, arrays of microreactors on silicon were studied. Different array configurations were fabricated to analyse the influence of each parameter on the physical operation of these devices. The present work focuses on the development and characterisation of micro-discharge devices based on silicon. In this thesis, direct current (DC) and alternating current (AC) regimes are studied using different discharge configurations. For the fabrication of these reactors, Silicon wafers are structured and processed in a cleanroom. Fabrication technology used is compatible with the CMOS technology. The microreactors are fabricated with nickel and silicon electrodes, separated by a dielectric layer of SiO2 with a thickness of 6 μm. The thickness of the dielectric is much lower here than the microreactors studied so far. The devices consist of cavities with 25 to 150 μm in diameter. Experiments of the microdischarges are performed in inert gases at a pressure between 100 and 1000 Torr. We first studied the phenomena of ignition and extinction for the microdevices based on alumina. Then, we studied the microreactors based on silicon containing 1 to 1024 cavities under DC and AC regimes. Characteristics of microdischarges were studied by electrical measurements, measurements of optical emission spectroscopy (OES), laser diode absorption spectroscopy (DLAS) and phase resolved optical emission spectroscopy (PROES). These diagnostics allowed us to investigate the phenomena of ignition, extinction, instability and failure mechanisms of the microplasma devices. This thesis work allowed testing the performance and technological limitations of the silicon based microdischarge arrays. Particular attention was paid to their life time.