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The Global ETD Search service is a free service for researchers
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Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
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Showing 11 to 20 of 32 (0.05 seconds)Spelling suggestions: "subject:"funnel diodes"" "subject:"gunnel diodes""
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An analog-to-digital conversion circuit using a stack of tunnel diodes each constructed from the same materialStrong, James Thomas January 1965 (has links)
This thesis describes a mathematical-graphical analysis and some analog computer simulation studies that were carried out to determine the feasibility of a proposed circuit to be used for analog-to-digital conversion.
The circuit analysed and simulated contains a stack of tunnel diodes which are constructed from the same type of semiconductor material. The switching characteristics of this circuit are controlled primarily by the ratios and the values of the capacitances which shunt the individual tunnel diodes and to a lesser extent by the interdiode capacitances. This is revealed in a study of the effects of different circuit parameter variation
A two tunnel diode stack circuit (two bits of information capacity) is analysed by studying the nature of the switching trajectories in the proximity of the singular points of the equations describing -the circuit operation. Three different modes of operation, each of which differs in the manner in which the 11 state is reached, are revealed for this circuit. The analysis indicates a feature of the circuit which can be used to determine the final state of the circuit before steady state conditions have been reached.
An extension of the two tunnel diode stack circuit to one containing three tunnel diodes yielded eight stable and accessible states. This indicates that the circuit proposed will be able to realize 2[superscript n] states with n tunnel diodes. It is shown that different interdiode capacitance connections will facilitate the achievement of this result. / Applied Science, Faculty of / Electrical and Computer Engineering, Department of / Graduate
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| 12 |
Design of wideband tunnel diode amplifiers.Dannacker, Keith Norman. January 1967 (has links)
No description available.
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| 13 |
Effects of stress on the electrical characteristics of a tunnel diode /Lee, Hsing-San January 1964 (has links)
No description available.
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| 14 |
Evaluation of the quantum well tunneling diode and the quantum electron-wave interference diode as high speed devicesBelhadj-Yahya, Chedly 08 1900 (has links)
No description available.
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| 15 |
Response of a germanium tunnel diode to CO2 laser radiation.Ribakovs, Gennadijs. January 1970 (has links)
No description available.
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| 16 |
Response of a germanium tunnel diode to CO2 laser radiation.Ribakovs, Gennadijs. January 1970 (has links)
No description available.
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| 17 |
Elaboration et caractérisation de jonctions tunnel à plusieurs barrières pour l'intégration dans une nouvelle génération de mémoires magnétiquesIovan, Adrian Ounadjela, Kamel Stoeffler, Daniel. January 2008 (has links) (PDF)
Thèse de doctorat : Physique de la matière condensée : Strasbourg 1 : 2004. / Titre provenant de l'écran-titre. Bibliogr. p. 147-153.
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| 18 |
Nonlinearity of the MOS tunneling structure 1-V characteristic for submillimeter radiation detection.Fish, Lawrence Irwin. January 1972 (has links)
No description available.
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| 19 |
Si/SiGe heterostructures materials, physics, quantum functional devices and their integration with heterostructure bipolar transistors /Chung, Sung-Yong, January 2005 (has links)
Thesis (Ph. D.)--Ohio State University, 2005. / Title from first page of PDF file. Includes bibliographical references (p. 197-212).
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| 20 |
De l'Utilisation de l'effet tunnel dans les structures semiconductrices à temps de transit pour la génération d'ondes hyperfréquences.Chive, Maurice, Unknown Date (has links)
Th.--Sci. phys.--Lille 1, 1978. N°: 439. / Rés. de la th.
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