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No description available.

Thesis (Ph. D.)--Ohio State University, 2007. / Title from first page of PDF file. Includes bibliographical references (p. 167-177).

Issued also as a Ph.D. Thesis in the Dept. of Electrical Engineering, 1966. / Bibliography: p.56.

Tapered slot antennas (TSAs) have seen considerable application in the millimeter-wave portion of the spectrum. Desirable characteristics of TSAs include symmetric E- and H-plane antenna patterns, and broad non-resonant bandwidths. We investigate extension of TSA operation toward higher frequencies in the thermal infrared (IR), using a metal-oxide-metal diode as the detector. Several different infrared TSA design forms are fabricated using electronbeam lithography and specially developed thin-film processes. The angular antenna patterns of TSA-coupled diodes are measured at 10.6 micrometer wavelength in both E- and H-planes, and are compared to results of finite-element electromagnetic modeling using Ansoft HFSS. Parameter studies are carried out, correlating the geometric and material properties of several TSA design forms to numerical-model results and to measurements. A significant increase in antenna gain is noted for a dielectric-overcoat design. The traveling-wave behavior of the IR TSA structure is investigated using scattering near-field microscopy. The measured near-field data is compared to HFSS results. Suggestions for future research are included

<p> The MIS tunnel solar cell has recently attracted most of the attention in the solar energy conversion field. Construction is very simple and eliminates the costly diffusion of dopants. As in the Schottky type, a metal of proper work function is chosen to induce an inversion layer at the surface of the semiconductor (Al in the case of p type Si). An ultra thin (< 1.5 nm) oxide between the semiconductor and the metal passivates the surface by reducing surface states while permitting tunneling from the semiconductor to the metal.</p> <p> Good fill factors (> .7) have been obtained but high reflectivity of the Al has reduced the current output. Open circuit voltages greater than .61 volts and short circuit current density of 21 ma/cm^2 have been measured. Experimental evidence of the presence of an oxide different from SiO2 within 1.4 nm of the surface will be given and related to the thickness variation of the open circuit voltage. A maximum in VOC around 1.4 nm was found. A maximum efficiency of 7% was achieved without anti reflexion coating and a curve factor of .81 was observed in one of the cells. A slight variation in efficiency with the cell area was also observed.</p> / Thesis / Master of Engineering (MEngr)

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No description available.

The objective of this dissertation is to develop amorphous metal thin films (AMTFs) for two-terminal electrical device and nanolaminate applications. Two AMTFs, ZrCuAlNi and TiAl, are investigated in both two-terminal electrical device and nanolaminate applications. Material properties including composition, atomic order, surface morphology, surface potential, and electrical resistivity are explored. Application of AMTFs as electrodes in tunneling MIM diodes leverages the ultra-smooth AMTF surface morphology which results from the amorphous atomic order of AMTFs. Analysis methodologies using tunneling MIM diode I-V characteristics are described. A methodology used to estimate potential barrier heights is applied to tunneling MIM diode with differing lower electrode material, upper electrode material and upper electrode deposition technique. A second methodology used to estimate relative tunneling MIM diode insulator thickness is also presented. The presented I-V characteristic analysis methodologies illustrate that tunneling MIM diodes fabricated with AMTF lower electrodes possess tunable I-V characteristics. Nanolaminates are layered materials fabricated with alternating dissimilar thin-film layers. The flexibility of AMTF nanolaminates is illustrated through the presentation of amorphous metal/oxide nanolaminates fabricated with differing AMTFs and aqueous solution deposited oxides. TEM and XPS depth profile analysis of realized nanolaminates are presented. The optical dielectric response of ZrCuAlNi/aluminum phosphate oxide (AlPO) and TiAl/AlPO nanolaminates are evaluated through polarized reflectance measurements and effective medium theory. The optical dielectric response of the nanolaminates differ from the optical dielectric response of the component layers. ZrCuAlNi/AlPO and TiAl/AlPO nanolaminates therefore satisfy the definition of metamaterials. / Graduation date: 2012 / Access restricted to the OSU Community at author's request from May 9, 2012 - May 9, 2013

Reproduction de : Thèse de doctorat : Mathématiques appliquées : Toulouse 3 : 2007. / Titre provenant de l'écran-titre. Bibliogr. à la fin des chapitres.