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Timing Vapor–Melt Equilibration in Silicic MagmasBall, Madison 06 September 2017 (has links)
Magmas experiencing pressure changes can follow equilibrium or nonequilibrium degassing paths that determine the rate of gas exsolution and the composition of gases exsolved. Many variables influence timescales of equilibration between vapor and melt after a perturbation in pressure, temperature, or other factors, and the magnitude of this equilibration time determines whether the system experiences equilibrium degassing or not. In order to create a simplified framework for assessing degassing regime, we constructed a numerical diffusion model to test the sensitivity of equilibration time to variables such as bubble size, spacing, melt temperature, initial and final system pressures, and water content. We then determined the degassing regime for a range of bubble-spacing and decompression rates as an initial simplified framework to build on. We also attempted the first mixed-volatile continuous decompression experiments in order validate our model and further improve analyses and interpretations of volatile gradients in natural samples.
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Previsão do tempo de remediação de solos contaminados usando a extracção de vaporAlbergaria, José Tomás Veiga Soares de January 2010 (has links)
Tese de doutoramento. Engenharia do Ambiente. Faculdade de Engenharia. Universidade do Porto, Departamento de Engenharia Química. Instituto Superior de Engenharia do Porto. 2010
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CVD of ceramic coatings in a hot wall and fluidised bed reactorPapazoglou, Despina. January 1994 (has links) (PDF)
Bibliography: leaves 210-223.
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Metal organic chemical vapor deposition and atomic layer deposition of strontium oxide films on silicon surfacesCuadra, Amalia C. January 2007 (has links)
Thesis (M.Ch.E.)--University of Delaware, 2007. / Principal faculty advisor: Brian G. Willis, Dept. of Chemical Engineering. Includes bibliographical references.
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Wide stripe, high power diode lasersParson, Kevin J. 30 March 1992 (has links)
Typical power outputs of commercially available diode lasers are on the
order of 5 milliwatts. This thesis discusses the growth, processing and
fabrication of high power (lOO's of milliwatts) diode lasers. Devices were
grown by Molecular Beam Epitaxy (MBE) and by Metal Organic Chemical
Vapor Deposition (MOCVD). The MOCVD diode lasers demonstrated room
temperature laser operation with peak output powers of 450 mW/facet pulsed
mode. The MBE diode lasers demonstrated room temperature pulsed laser
operation of 110 mW/facet.
The dynamics of the quantum well structure were studied. The carrier
concentration, threshold current density and coatings were modeled. It was
demonstrated through transmission line analogies that, depending on the thickness
of the high reflective coating, the result would be a high output power diode laser
or a superluminescent device. The MBE device was coated with a high power
coating resulting in a peak power of 450 mW. The MOCVD device was used to
study the superluminescence resulting from specific coatings. / Graduation date: 1992
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A study of the diffusion of sorbed water vapor through paper and regenerated cellulose filmsAhlen, Arne T. 01 January 1969 (has links)
No description available.
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Heat and mass transfer modeling for a CVD process in manufacturing TFT-LCDLiu, Yu-chen 25 August 2006 (has links)
This study employed a commercial code to simulate a chemical vapor deposition process in a rectangular chamber for deposition of a silicon dioxide layer on a rectangular substrate. We focus on the deposition rate on the substrate surface. We discuss the effects of the Reynolds number, the distance from inlet to substrate, the size of inlet region, the temperature of the inlet region, and the temperature of substrate.
The results show that as the temperature increase, the deposition rate on the substrate grows highly. This effect will decrease if the temperature is above the specific range. Besides, it is easily deposited unequally on the edge and corner region of the substrate. However, the central region on the substrate is still uniform. We could get bigger uniform area to adjust the proper conditions.
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Numerical Simulation of Showerhead performance in Chemical Vapor DepositionLin, Yi-Cheng 01 July 2003 (has links)
Low pressure chemical vapor deposition (LPCVD) is one of the important technics in the semiconductor process recently. The computer simulation is the best efficient method on the process research. This research use numerical method to study the performance of showerhead parameters, and to confer the flow field distribution and deposition rate under different design parameters in LPCVD of silicon (Si).
In this simulation, the CVD reactor modelings are constructed and discredited by using implicit finite volume method. The grids are arranged in a staggered manner for the discretization of the governing equations. Then the SIMPLE-type algorithm is used to solve all of the discretized algebra equations. The variable parameters are: (1) the inlet velocity, (2) the holes diameter of showerhead, (3) the showerhead size.
The results show that using the showerhead can adjust the flow filed distribution and it is better for film thickness uniformity. The holes diameter and distribution density have relations with film uniformity. We also proved that the growth rate increase with the inlet velocity under the some conditions.
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Evolution and characterization of partially stabilized zirconia (7wt% Y₂O₃) thermal barrier coatings deposited by electron beam physical vapor depositionBernier, Jeremy Scott. January 2001 (has links)
Thesis (M.S.)--Worcester Polytechnic Institute. / Keywords: Deposition rate; zirconia; TBC; texture; microstructure; EB-PVD. Includes bibliographical references (p. 78-79).
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III-phosphide semiconductor self-assembled quantum dots grown by metalorganic chemical vapor depositionRyou, Jae-hyun, January 2001 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2001. / Vita. Includes bibliographical references. Available also from UMI Company.
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