In this thesis, the growth of nonpolar m-plane zinc oxide (ZnO) nano-materials on (100) £^¡VLiAlO2 (LAO) substrates by a chemical vapor deposition (CVD) process had been studied. The mixture powders of ZnO and graphite are used as the precursor of reaction sources. Ar/O2 are used as the carrier gas and reaction gas source respectively, and the Au thin-film coated on the LAO substrate is the catalyst for the vapor-liquid-solid (VLS) growth mode. The X-ray diffraction (XRD), scanning electron microscope (SEM) and transmission electron microscope (TEM) were used to study the influence of the varied growth conditions, such as deposition time, reaction pressure, growth temperature, and the distance between substrates and reaction powder ¡K etc., on the crystal structure, surface morphology, orientation and microstructure characterizations of the ZnO nanostructure. The pure (10-10) m-plane ZnO nano-materials can be obtained at the growth parameters of 830¢XC, 10 torr, 5 minutes, and 50 sccm of Ar/O2. Furthermore, photoluminescence (PL), cathodoluminescence (CL) and Raman spectroscope (Raman) were used to study optical properties and the inner stress of the materials.

Wurtzite (W)-type ZnO condensates showed preferred orientation {10 1} when deposited on glass substrate by pulsed laser ablation on Zn target in the presence of oxygen. Such an artificial epitaxy depends on the well developed {10 1} surfaces of the condensates, which enabled {10 1}-specific coalescence to form twin and single crystal regardless of the co-deposited Zn. The W-ZnO condensates have decreasing particle size with increasing oxygen flow rate and a considerable residual stress due to the combined effects of rapid heating/cooling and thermal/lattice mismatch with Zn following parallel epitaxy or (01 )W-ZnO//(01 0)Zn; [ 2 3]W-ZnO//[0001]Zn involving {10 1} slip (Part I). In addition, wurtzite (W)-type ZnO/Zn composite deposit with preferred orientation {10 1}W-ZnO and (0001)Zn respectively on glass substrate in chapter I under Isothermal (600oC) atmospheric annealing caused self-catalyzed vapor-liquid-solid growth of rod-like W-ZnO whiskers with unusual habit. Analytical electron microscopic observations indicated that the W-ZnO whiskers extend along the zone axis of the well-developed polar surfaces {10 1} for a beneficial lower electrostatic energy and surface energy. Alternatively, the whiskers extend via {11 1}-specific growth twinning and/or coalescence twinning for a beneficial fair coincidence-site lattice at the twin boundary (Part II). Furthermore, Zn particulates overlain with wurtzite (W)-type ZnO condensates having nearly orthogonal {10 1} and {11 1} facets were found to self-catalyze unusual tapered W-ZnO whiskers upon isothermal atmospheric annealing, i.e. thermal oxidation, at 600oC. Analytical electron microscopic observations indicated that such whiskers formed tapered slabs having mosaic {10 1} and {2 1} twinned domains. The tapered whiskers can be rationalized by unconventional vapor-liquid-solid growth, i.e. {hkil}-specific coalescence twinning growth from the ZnO condensates taking advantage of a partially molten bottom source of Zn and the adsorption of atoms at the whisker tips and steps under the influence of capillarity effect (Part III). Finally, Electron irradiation of nano-size wurtzite (W)-type ZnO condensates with intimate mixture of parallel epitaxial Zn caused {10 1}W slip to form a single domain of rock salt (R)-type core and W-type shell. The two polymorphs follow (1 1)R//(0 11)W; [011]R//[ 2 3]W, i.e. chair type Peierls distortion with additional 38 degree tilting (001)R along the ( 2 0)W plane for a fair match of (10 1)W/(1 1)R, the same as one of the two paths for the back-transformation of R-ZnO into a lower crystal symmetry. The martensitic nucleation of R-type ZnO can be attributed to dynamic migration of interstitials/vacancies, lattice mismatch stress, and capillarity effect.

Le carbure de silicium est en théorie un des meilleurs candidats pour les applications aussi stratégiques que sont l'électronique forte puissance, haute température, haute fréquence ou encore fonctionnant en environnement hostile. Cependant, les difficultés de cristallogenèse de ce matériau ralentissent le développement de cette filière. Par exemple, l'épitaxie en phase vapeur (EPV) de couches minces de SiC nécessite des températures élevées, supérieures à 1400°C, ce qui compliquent la mise en oeuvre et le contrôle du procédé de croissance. Faire<br />croître SiC en dessous de cette température tout en gardant une qualité de matériau (cristallinité et dopage) satisfaisante est un véritable défi dont les intérêts industriels sont évidents.<br />Cet objectif peut être atteint en utilisant des techniques en solution, sous gradient thermique<br />ou par mécanisme vapeur-liquide-solide (VLS). Différents bains et différentes configurations<br />de croissance ont été envisagés. Cette étude a permis de mieux cerner les difficultés de mise en oeuvre, de justifier les solutions techniques proposées et de sélectionner les alliages Al-Si comme meilleurs candidats. A partir de ces bains, l'homoépitaxie des polytypes hexagonaux (4H et 6H-SiC) a été démontrée pour des températures aussi basses que 1100°C. Les couches sont très fortement dopées p, par l'incorporation massive d'Al, de bonne qualité cristalline et assez rugueuses. Ce fort dopage p confère des propriétés électriques très intéressantes<br />notamment en terme d'abaissement de la résistivité de contact.<br />Le polytype cubique (ou 3C-SiC) ne disposant pas de substrats commerciaux de qualité suffisante, sa croissance a été réalisée par hétéroépitaxie sur substrat de Si(100) et a-SiC(0001) non désorientés, respectivement par EPV et VLS. L'EPV sur substrat de Si produit des couches de qualité cristalline médiocre en raison du fort désaccord de maille. La courbure<br />importante des plaques, résultant des contraintes thermiques, peut être diminuée en modifiant<br />l'étape de carburation. Un tel matériau pourra trouver des débouchés avec des composants peu<br />exigeants en qualité cristalline. Enfin, les alliages à base de Ge et Sn se sont montrés adaptés à<br />la germination du polytype 3C-SiC sur substrats hexagonaux. Des conditions de croissances<br />permettant d'éliminer les parois d'inversions dans les couches, ont été déterminées. Le matériau 3C ainsi épitaxié n'a pas d'équivalent ailleurs et est très prometteur pour développer un filière basée sur ce polytype.

Central to the implementation of colloidal nanomaterials in commercial applications is the development of high throughput synthesis strategies for technologically relevant materials. Solution based synthesis approaches provide the controllability, high throughput, and scalability needed to meet commercial demand. A flow through supercritical fluid reactor was used to synthesize silicon nanowires in high yield with production rates of ~45 mg/hr. The high temperature and high pressure of the supercritical medium facilitated the decomposition of monophenylsilane and seeded growth of silicon nanowires by gold seeds. Crystalline nanowires with diameters of ~25 nm and lengths greater than 20 [micrometers] were routinely synthesized. Accumulation of nanowires in the reactor resulted in deposition of a conformal amorphous shell on the crystalline surface of the wire. X-ray diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and energy dispersive X-ray spectroscopy were used to determine the shell composition. The shell was identified as polyphenylsilane formed by polymerization of the silicon precursor monophenylsilane. A post synthesis etch was developed to remove the shell while still maintaining the integrity of the crystalline silicon nanowire core. Subsequent surface passivation was achieved through thermal hydrosilylation with a terminal alkene. The development colloidal nanomaterials into commercial applications also requires simple and robust bottom-up assembly strategies to facilitate device fabrication. A Langmuir-Blodgett trough was used to assemble continuous monolayers of hexagonally ordered spherical nanocrystals over areas greater than 1 cm². Patterned monolayers and multilayers of FePt nanocrystals were printed onto substrates using pre-patterned polydimethylsiloxane (PDMS) stamps and a modified Langmuir Schaefer transfer technique. Patterned features, including micrometer-size circles, lines, and squares, could be printed using this approach. The magnetic properties of the printed nanocrystal films were also measured using magnetic force microscopy (MFM). Room temperature MFM could detect a remanent (permanent) magnetization from multilayers (>3 nanocrystals thick) films of chemically-ordered L1₀ FePt nanocrystals. Grazing incidence small angle X-ray scattering was used to quantitatively characterize the grain size, crystal structure, lattice disorder, and edge-to-edge spacing of the nanocrystal films prepared on the Langmuir-Blodgett trough both on the air-water interface and after transfer. / text

The thesis deals with inventory and review previously created inventories on small watercourses in properties found in the cadastral areas of communes Doubrava u Březiny Krásensko, Podomí, Ruprechtov and Rychtářov that are managed by state enterprise Vojenské lesy a statky, Divizion Plumlov. The aim of inventory consists of field inspections on watercourses, targeting position of aimed points, description of troughs current state or description of objects and noticing its fundamental technical parameters. The inventory revision compares current state of technical objects to its previous state and evaluates implemented modifications. In this way 34 small watercourses belonging to the basin of significant small watercourse Malá Haná were inventoried. Its total length is 41.3 km on the area of 40.9 km2. Based on the results it is claimed these watercourses are in good condition, their troughs have been only minimally modified. The most common problem is non-functional blocked culverts that transfer forest paths across the watercourses. The second phenomenon occurring very often is bank ripping which threatens bodies of forest paths in many cases. It was recommended to stabilize these stressed spots in the proposals. Main purpose of this thesis is to become essential documentation for decisions and planning actions in the field of watercourses management in the aimed area.

Orientadores: João Mauricio Rosario, Francisco Carlos Parquet Bizarria. / Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Mecanica / Made available in DSpace on 2018-08-12T03:58:51Z (GMT). No. of bitstreams: 1 Barbosa_SilvanaAparecida_D.pdf: 3254271 bytes, checksum: dfd0e2d57b3560c893dad3675337cfe9 (MD5) Previous issue date: 2008 / Resumo: A tarefa contínua de detecção de mudança de cenários em determinado ambiente pode ocasionar estresse físico e mental para o supervisor. Com o uso da visão computacional associada à automação é possível oferecer recursos para que essa tarefa seja executada de forma automatizada. Neste contexto, este trabalho apresenta uma proposta de arquitetura para um sistema detectar mudanças de cenários por meio da comparação sucessiva de imagens. Esse sistema de visão deverá possibilitar por meio da implementação de um algoritmo, utilizando recursos matemáticos específicos para a aplicação, a detecção de mudança no cenário e o registro das imagens relativas a essa situação. Para validar a referida proposta, com o enfoque na aplicação aeroespacial, é apresentado nesta tese o estudo de caso para aplicação de técnicas de Visão Artificial na Detecção de Mudança de Cenários em Plataforma de Integração de Veículos Espaciais. Esse estudo visa supervisionar áreas destinadas principalmente à integração e aos testes desse veículo espacial. A implementação desse algoritmo utiliza técnicas de processamento de imagens baseada em filtros espaciais, em especial convolução por filtro da média. Os resultados satisfatórios, obtidos nos ensaios práticos realizados em protótipo da Torre Móvel de Integração, indicam que o sistema é adequado para aplicação a qual se destina. / Abstract: The continuous task of detecting changes in scenarios can cause a mental and physical stress on supervisor. The associated use of computational vision and automation provides resources to execute this task in an automated way. This thesis presents an architectural proposal for a system to detect changes in the imaged scenes by comparing images successively. Through the development of algorithm using specific mathematical tools, this vision system detects and record changes in the imaged scenes. Focusing aerospace area to validate this proposal, Artificial Vision Applied in Detection of Change of Scenes, a Study of Case in Platform for Integration of Space Vehicles is presented in this thesis. The purpose of this research is supervising the designed areas for integration and tests of the space vehicle. Image processing techniques based on spatial filters, in particular convolution, are used for algorithm development. The results obtained through practical tests executed on a prototype of an Integration Mobile Tower, show the system is appropriate to this application. / Doutorado / Mecanica dos Sólidos e Projeto Mecanico / Doutor em Engenharia Mecânica

Ce travail examine des nanofils III-V synthétisés en mode vapeur-liquide-solide, une goutte liquide catalysant la croissance unidimensionnelle. En conjuguant expériences d’épitaxie par jets moléculaires, caractérisations structurales et analyses théoriques, j'étudie et clarifie plusieurs questions cruciales. L’une d'elles est le contrôle de la phase cristalline, qui s’avère souvent un mélange de segments cubiques et hexagonaux. Au moyen d’une analyse probabiliste de la séquence d'empilement de nanofils d’InP, je montre que la sélection de phase est déterminée non seulement par les conditions de croissance mais aussi par des interactions entre monocouches. Je souligne et discute le rôle de l'énergie de bord du germe qui médie la formation de chaque monocouche. On sait par ailleurs que le caractère abrupt des interfaces dans les hétérostructures axiales est limité par l’accumulation de matière dans la goutte (effet réservoir). J'étudie la formation de telles hétérostructures dans des nanofils de GaAs auto-catalysés en utilisant un second élément des groupes V (P) ou III (Al). Les profils compositionnels des insertions ternaires sont analysés à la résolution atomique. Les interfaces se révèlent soit plus larges (GaAsP) soit plus étroites (AlGaAs) qu’attendu et la morphologie du front de croissance dépend de la supersaturation. Je montre que, dans les deux cas, la largeur d’interface peut être réduite à quelques monocouches et je suggère d’autres améliorations. Enfin, je présente mes tentatives pour réaliser des nanofils ultraminces de GaAs et GaP et je discute du contrôle de la croissance à l’échelle d’une monocouche par réduction du caractère stochastique de la nucléation. / This work investigates III-V nanowires synthesized via the vapor-liquid-solid method, whereby a catalyst droplet promotes one-dimensional growth. By combining molecular beam epitaxy experiments, structural characterization and theoretical analyses, I study and clarify several critical issues. One of them is the control of the crystal phase, which is frequently found to be a mix of cubic and hexagonal segments. By performing a probabilistic analysis of the stacking sequence of InP nanowires, I show that phase selection is determined not only by growth conditions but also by interactions between layers. I highlight and discuss the role of the edge energy of the nucleus that mediates the formation of each monolayer. Another important problem is the formation of axial heterostructures, which interface sharpness is severely limited by material accumulation in the droplet (‘reservoir effect’). To this end, I study the formation of such heterostructures in Ga-catalyzed GaAs nanowires using either a second group V element (P) or a second group III element (Al). The composition profiles of the ternary insertions are analyzed with monolayer resolution. The interface widths are found to be larger (GaAsP) or narrower (AlGaAs) than expected, and the morphology of the growth front depends on supersaturation. In both cases, I demonstrate that the interface width can be reduced to a few monolayers and suggest further improvements. Attempts to achieve ultrathin GaAs and GaP nanowires that would permit lateral quantum confinement are presented. Finally, I consider the possibility of minimizing the stochastic character of nucleation ultimately to control the growth of single monolayers.

This diploma thesis is about ZnO nanowires growth, their doping and analysis. High temperature and pressure oxidation of brass foil and deposition from effusion cell in oxidative atmosphere utilized for nanowires growth. The growth is affected by different temperature and pressure. It has been shown that under certain experimental conditions nanowires can be prepared by the former method. However, the growth was hindered when effusion cell was used.

The thesis deals with a new versatile strategy which is aimed to heat up rapidly the nanostructures with the help of a focused light beam utilizing localized plasmons (collective oscillation of electrons). By local heating, the growth of the semiconductor nanowires can be initiated and controlled at any arbitrarily prespecified location down to the single nanostructure level in a chamber at room-temperature. The aim of the work is to study electromagnetic field in the selected structures, especially in metal nanospheres by using numeric calculations and computations of the thermal field in the vicinity of these illuminated nanostructures. Electromagnetic phenomena is simulated in Lumerical and the temperature field in COMSOL.

While investigations of semiconductor nanowires (NWs) has a long history, a significant progress is yet to be made in silicon carbide (SiC) NW technologies before they are ready to be utilized in electronic applications. In this dissertation work, SiC NW polytype control, NW axis orientation with respect to the growth substrate and other issues of potential technological importance are investigated. A new method for growing SiC NWs by vapor-liquid-solid mechanism was developed. The method is based on an in-situ vapor phase delivery of a metal catalyst to the growth surface during chemical vapor deposition. This approach is an alternative to the existing seeded catalyst method based on ex-situ catalyst deposition on the target substrate. The new SiC NW growth method provided an improved control of the NW density. It was established that the NW density is influenced by the distance from the catalyst source to the substrate and is affected by both the gas flow rate and the catalyst diffusion in the gas phase. An important convenience of the new method is that it yields NW growth on the horizontal substrate surfaces as well as on titled and vertical sidewalls of 4H-SiC mesas. This feature facilitates investigation of the NW growth trends on SiC substrate surfaces having different crystallographic orientations simultaneously, which is very promising for future NW device applications. It was established that only certain orientations of the NW axes were allowed when growing on a SiC substrate. The allowed orientations of NWs of a particular polytype were determined by the crystallographic orientation of the substrate. This substrate-dependent (i.e., epitaxial) growth resulted in growth of 3C-SiC NWs in total six allowed crystallographic orientations with respect to the 4H-SiC substrate. This NW axis alignment offers an opportunity to achieve a limited number of NW axis directions depending on the surface orientation of the substrate. The ease of controlling the NW density enabled by the vapor-phase catalyst delivery approach developed in this work, combined with the newly obtained knowledge about how to grow unidirectional (wellaligned) NW arrays, offer new opportunities for developing novel SiC NW electronic and photonic devices.