In the diploma thesis, an overview of the existing literature focused on the thermoplastic co-extrusion method was worked out and based on the findings, extrusion of the monolayer and homogenous bodies from ZrO2, Al2O3, ZTA a ATZ was studied. For thermoplastic extrusion the capillary rheometer was modified and the nozzle was designed and fabricated. Applying the co-extrusion method, homogenous ceramic rods and monolayer rods in structure core/layer: ZrO2/Al2O3, ZrO2/ATZ and ZTA/Al2O3 were fabricated. In monolayer rods, the interface quality and defects that originate during preparation were evaluated. Technological parameters and properties of homogenous rods were used to rate the structure and defects in monolayer rods. Monolayer rods ZrO2/ATZ and ZTA/Al2O3 with 2.5 mm diameter and 45 mm length (containing small defects) were prepared by thermoplastic co-extrusion.

The influence of various pressure-less heating schedules (CRH - Constant Rate of Heating, TSS - Two Step Sintering, RCS – Rate Controlled Sintering) on the final microstructure of cubic zirconia ceramics was studied in this master´s thesis. There were used nanopowders ZrO2 (stabilized with 8 mol.% Y2O3) with initial particle size 80 nm (TZ-8Y) and 140 nm (TZ-8YSB). Powders were cold isostatically pressed and pressure-less sintered in air by different heating regimes. It was found that for both studied materials the modification of conventional sintering (CRH) using lower sintering temperatures and longer sintering dwell times can result in samples with finer microstructure. For example, the sintering of TZ-8YSB ceramics at a relatively low temperature (1270 °C) but for very long time (60 h) led to ceramics with the same final density (99,25 % of theoretical density) and almost identical grains (1,31 m vs. 1,27 m) in compare with TSS (1440 °C/ 1290 °C/ 15 h). On the other hand, RCS method showed no positive effect on the microstructure of both materials in comparison with CRH method. The obtained results indicate that the microstructure of c-ZrO2 ceramics can be influenced rather in its third sintering stage (by CRH and TSS methods) than in the second sintering stage (by RCS method).

In the diploma thesis, overviews of the existing literature focused on the gelcasting method and based on the findings were prepared aqueous slurries of zirconium oxide for gelcasting method. These suspensions were examined for the influence of the content ceramics powder, type and content of dispersants and volume of initiator on viscosity of aqueous suspensions and process of polymerization. Optimum ceramic suspension had 45 vol.% of ceramic powder which was stabilized by 0,5 weight % of dispersant Dolapix CE 64. Polymerization running at room temperature was initiated by 0,175 weight % of ammonium persufate without accelerator. Microstructure of prepared ceramic blanks and sintered bodies was compared with body prepared by isostatic pressing. For the machining tests were prepared blanks in disc-shaped.

No description available.

Ces dernières années, les oxydes de métaux de transition ont suscité de grands intérêts du point de vue fondamental et technologique. A cet égard, nous nous concentrons sur deux types d'oxydes : le première, le Perovskite double Pb2FeMoO6, avec un potentiel d'application sur des appareils magnétorésistances et spintroniques ; le deuxième, la zircone ZrO2 avec de excellentes propriétés mécaniques et diélectriques pour être utilisée dans les domaines de matériaux structuraux et fonctionnels. Dans la présente étude, nous utilisons la méthode ab-initio (first-principles calculation) pour étudier les détails des orbites décomposés des structures électroniques et des propriétés magnétiques du Pb2FeMoO6 massif de structure parfaite, massif avec des défauts et en structure de plaque. En même temps, les détails des orbites décomposés des structures électroniques, les propriétés mécaniques, dynamiques et diélectriques de six phases de la ZrO2 (cubique, tétragonale, monoclinique, orthorhombique I (Pbca), orthorhombique II (Pnma) et (Pca21)) ont également été étudiés. D'abord nous allons faire les calculs ab-initio sur les propriétés structurales, électroniques et magnétiques de double pérovskite Pb2FeMoO6 massif avec structure parfaite, massif avec défauts et en structure de plaque. La densité des états orbitaux décomposés montre le champ cristallin octaédrique des six atomes d'oxygène autour de métal de transition (des Fe ou des Mo) et divise les cinq états dégénérés des atomes libres de Fe ou Mo dans un états triplement dégénéré t2g (dxy, dyz et dzx) avec une énergie plus faible et dans un états doublement dégénéré eg (dz2 et dx2-y2) avec une énergie plus élevée. La nature semi-métalliques et les propriétés de transport complètes (100%) de spin de polarisation de Pb2FeMoO6 massif et en structures de plaque reflètent un grand potentiel d’application dans les dispositifs magnéto-résistifs et spintroniques. Le caractère semi-métallique est maintenu pour le composé Pb2FeMoO6 désordonné contenant d’antisites Fe(Mo), de lacunes de VFe, VO ou VPb, alors qu'il disparaît quand les antisites Mo(Fe), les échanges entre Fe-Mo ou les lacunes de VMo sont présents même la concentration de défauts est réduite jusqu'à C = 6,25%. Ainsi, les antisites Mo(Fe), les échanges entre Fe-Mo ou les lacunes de VMo doivent être évités afin de préserver le caractère semi-métallique du composé Pb2FeMoO6 et donc être utilisables dans des dispositifs magnéto-résistifs et spintroniques.Ensuite, basé sur la rigidité élastique constantes individuelle calculée Cij de six phases de ZrO2, les propriétés élastiques et mécaniques des agrégats polycristallins ont été prédits. Nous avons donc examiné le caractère isolant de la phase cubique/tétragonale de ZrO2 sous forme film avec différentes combinaisons et différentes épaisseurs possibles dans des plans avec des faibles indices de Miller [(001), (110) et (111)] (pour la phase cubique) et [(001), (100), (110), (101) et (111)] pour la phase tétragonale. Il se trouve que pour les différentes combinaisons et épaisseurs possibles dans ces trois / cinq plans avec faibles indices de Miller, seulement ZrO2-terminé sous forme d’un film orienté dans le plan (110)/(100) et O-terminé sous forme d’un film orienté (111)/(101) des phases cubique/tétragonale de ZrO2 maintiennent le caractère isolant même les épaisseurs d’empilement est réduit jusqu'à deux et trois couches atomiques. Puisque cubique et tétragonale ZrO2 ont grande anisotropie élastique, comme un exemple, le stress et l'énergie de déformation densité ont été calculées pour tous {hkl} -oriented grains d'un film ZrO2 cubique polycristallin. / Transition-metal oxides have attracted exceptional research interest in recent years from both fundamental and technological perspectives. In this respect, we focus on two types of oxides, first, the double perovskite, Pb2FeMoO6 for a potential magnetoresistive and spintronics device application, second, zirconia ZrO2 with great mechanical and dielectric properties can be widely used in both structural and functional material fields. In this thesis we use first-principles calculations (ab-initio) to study systematically the detailed orbital-decomposed electronic structures and magnetic properties of Pb2FeMoO6 in the perfected bulk, defected bulk and slab structures. The detailed orbital-decomposed electronic structures, the mechanical, dynamical and dielectric properties of the ZrO2 in six phases (cubic, tetragonal, monoclinic, orthoI (Pbca), orthoII (Pnma) and (Pca21)) have also been studied.Firstly, considering the comparable ionic radius of Pb2+ (1.49Å) with that of Sr2+ (1.44Å), we propose for the first time to substitute Sr2+ ion with Pb2+ ion in Sr2FeMoO6 and a detailed study has been performed on the Pb2FeMoO6 in the perfected bulk, defected bulk and slab structures. The half-metallic nature and a complete (100%) spin-polarized transport properties reflect the bulk and especially slab Pb2FeMoO6 a potential application in magnetoresistive and spintronics devices; The detailed orbital-decomposed density of states show the octahedral crystal-field of the six oxygen atoms around transition-metal Fe or Mo atoms splits the five-fold degenerate states of the free Fe or Mo atoms into triply degenerate t2g (dxy, dyz and dzx) states with lower energy and doubly degenerate eg (dz2 and dx2-y2) states with higher energy, which cannot be observed in previous partial density of states ( ); The Fe3+ and Mo5+ ions are in the (3d5, s=5/2) and (4d1, s=1/2) states with positive and negative magnetic moments respectively and thus antiferromagnetic coupling via oxygen between them; The half-metallic character is maintained for the disordered Pb2FeMoO6 compounds containing FeMo antisite, VFe, VO, or VPb vacancy, while it vanishes when MoFe antisite, Fe-Mo interchange or VMo vacancy are presented even the defect concentration reduce down to C=6.25%. So the MoFe antisite, Fe-Mo interchange or VMo vacancy defects have to be avoided in order to preserve the half-metallic character of the Pb2FeMoO6 compounds and thus usable in magnetoresistive and spintronics devices.Secondly, based on the calculated individual elastic stiffness constants Cij of six ZrO2 phases, the elastic and mechanical properties of the polycrystalline aggregates have been predicted. We further exam the insulating characters of the cubic/tetragonal ZrO2 slabs with various possible terminations and thicknesses within three [(001), (110) and (111)]/five [(001), (100), (110), (101) and (111)] lower index Miller planes. It is found for the first time that among various possible terminations and thicknesses within these three/five lower index Miller planes, only ZrO2-terminated slabs of the (110)/(100) Miller plane and O-terminated slabs of the (111)/(101) Miller plane of cubic/tetragonal ZrO2 maintain the insulating character and thus usable as a gate dielectric oxide in IC industry even the slab thicknesses reduce down to 2 and 3 atomic layers, respectively; Since cubic and tetragonal ZrO2 have larger elastic anisotropy, both stress and strain energy density have been calculated for all {hkl}-oriented grains of a cubic ZrO2 polycrystalline film as one example.

Le contexte environnemental (réchauffement climatique) et politique (augmentation du parc EnR) entraîne une mutation du paysage énergétique français. Le méthane de synthèse est présenté comme un vecteur énergétique permettant le stockage et le transport de l’électricité renouvelable en surproduction tout en recyclant le CO2 (Power-to-Methane). Un des objectifs de la thèse est de développer un catalyseur actif en co-méthanation d’un mélange post co-électrolyse H2/CO/CO2/H2O/CH4 (projet ANR CHOCHCO). Le catalyseur synthétisé est de type Ni/CZP. L’optimisation de la synthèse coprécipitation par l’utilisation combinée du sel précipitant (NH4)2CO3 et du tensioactif CTAB a mené à un catalyseur performant (absence de poison alcalin et augmentation de la surface spécifique) capable de produire du CH4 à basse température (250 °C) avec un rendement élevé. Le catalyseur a montré une résistance satisfaisante à la désactivation par dépôt de carbone et par frittage, indispensable pour le fonctionnement intermittent du procédé. Un modèle cinétique, de type Langmuir-Hinshelwood, a pour la première fois été développé sur un catalyseur de type Ni/CZP. / The environmental (global warming) and political (increase of the renewable electric farm) context leads to a mutation of the French energy landscape. Synthetic methane is presented as a energy carrier for storing and transporting renewable electricity in overproduction while recycling CO2, a process called Power-to-Methane. One of the objectives of the thesis is to develop an active catalyst for the co-methanation of a post-co-electrolysis mixture H2/CO/CO2/H2O/CH4 (CHOCHCO ANR project). A Ni/CZP type catalyst was synthesized in this purpose. The optimization of the coprecipitation synthesis by the combination of the precipitating salt (NH4)2CO3 and the surfactant CTAB has led to a high performance catalyst (absence of alkaline poison and increase of the specific surface area) able to produce CH4 at low temperature (250 °C) with a high yield. The catalyst showed a satisfactory resistance to carbon deposition and sintering deactivation, which is a key point for the intermittent operating conditions of the process. A kinetic model, of the Langmuir-Hinshelwood type, was developed for the first time on a Ni/CZP type catalyst.

Made available in DSpace on 2016-06-02T19:55:32Z (GMT). No. of bitstreams: 1 4381.pdf: 2748711 bytes, checksum: 4ba9831d0665b24b6f48f775d30927d2 (MD5) Previous issue date: 2012-04-13 / Universidade Federal de Minas Gerais / The minimization of the emissions of nitrogen oxides (NOx) is a subject of crucial interest, since them cause serious environmental problems which affect human health, vegetation and fauna. With the purpose to abate NOx, processes involving their catalytic reduction show strong potential. In the case of the reduction of NO with CO a meaningful advantage arises, once both pollutants are removed simultaneously. In order to obtain efficient and stable catalysts for this reaction, many studies have been done with the aim to improve the catalytic activity by achieving a better favorable metal-support interaction to the occurrence of the reaction and a better distribution of the active phases on the support. In this context, the objective of this study was to prepare Cu, Fe and Co based catalysts supported on TiO2, CeO2 and ZrO2 to be applied in the abatement of NO with CO. The addition of the precursors of the active phases was made during the synthesis of the support via the sol-gel method (in situ addition). Furthermore, catalysts with the same composition were prepared by conventional methods. Results from the N2 adsorption/desorption measurements show that the sol-gel method was efficient to prepare supports with improved textural properties. H2-TPR and UVVIS-DRS data evidenced the presence of Cu, Fe or Co oxides in the respective catalysts, which mostly did not show characteristic X-ray diffraction peaks of those oxide phases, suggesting their high dispersion on the supports. In general, results of the reduction of NO to N2 with CO revealed that the catalysts prepared via sol-gel are as active as those prepared by conventional routes, which demonstrate the great potential of the catalysts preparation via the sol-gel in situ procedure, which diminishes the number of the synthesis steps saving time and energy. In general, among the studied supports, ceria presented a more favorable metal-support interaction. In the presence of O2, SO2 and water steam, catalysts 6,5Cu/CeP, 5,5CuZrSG and 8,4Fe/TiC showed no significant changes in their activity and selectivity, indicating that they present high stability to be used under the severe conditions of real processes. / A minimização das emissões de óxidos de nitrogênio (NOx) é assunto de interesse crucial, pois geram graves problemas ambientais que afetam à saúde humana, à flora e à fauna. Para abater os NOx, processos envolvendo à sua redução catalítica apresentam forte potencial. No caso da redução catalítica de NO com CO, tem-se a vantagem adicional de minimizar as emissões de ambos poluentes. Para a obtenção de catalisadores eficientes e estáveis para essa reação, muitos estudos têm sido desenvolvidos no sentido de aumentar a atividade por meio de uma interação metalsuporte mais favorável ao processo reativo e de se conseguir uma melhor distribuição da fase ativa no suporte. Nesse contexto, o objetivo do presente estudo foi preparar catalisadores para a redução de NO com CO à base de óxido de Cu, Fe ou Co, suportados em TiO2, CeO2 ou ZrO2, com a adição do precursor da fase ativa durante a preparação do suporte via processo sol-gel (adição in situ). Além disso, catalisadores de mesma composição foram preparados por rotas convencionais. Resultados de medidas de adsorção/dessorção de N2 dos suportes mostram que o método sol-gel utilizado é mais eficiente no preparo de suportes com propriedades texturais melhoradas. Análises de RTP-H2 e ERD-UVVIS evidenciaram a presença dos óxidos de Cu, Fe ou Co em todos os catalisadores, os quais, em sua maioria, não apresentaram picos de difração de raios X característicos dessas fases, o que sugeriu sua alta dispersão no suporte. Em geral, os resultados da redução de NO a N2 com CO mostraram que os catalisadores preparados pelo método sol-gel in situ são tão ativos quanto os catalisadores preparados por métodos convencionais, o que demonstra o forte potencial desse procedimento, que resulta no uso de um número menor de etapas na preparação do catalisador, com a consequente economia de tempo e energia. De maneira geral, dentre os suportes estudados a céria mostrou uma relação metal-suporte mais favorável ao processo de óxidoredução. Os catalisadores 6,5Cu/CeP, 5,5Cu-ZrSG e 8,4Fe/TiC, na presença de O2, SO2 e vapor de água não apresentaram alteração significativa da sua atividade e seletividade, mostrando uma alta estabilidade para atuar sob as drásticas condições dos processos reais.

L'objectif de ce travail est : (i) pour préparer des oxydes mixtes X% MxOy-TiO2 (M = V, Zr et Si), (X = 5, 10, 15 et 20 wt-.% MxOy.) par la méthode sol-gel et suivie par une calcination à 500° C, (ii) de caractériser les échantillons préparés par différentes méthodes d'analyse physico-chimique (AAF, ICP, DRX, BET, TG-DTA et FT-IR) et (iii) d'étudier leur réactivité dans l'époxydation de cyclohexène.D'après les résultats des caractérisations, nous constatons que :- L'analyse DRX montre que pour les trois systèmes nous avons l'apparition de la phase anatase de TiO2. La meilleure cristallinité a été observée pour le système en présence de V2O5. La phase de SiO2 est amorphe et la phase de ZrO2 n'a pas été détectée.- L'analyse par adsorption d'azote, donne le classement de ces systèmes selon leurs surfaces spécifiques comme suit :SiO2-TiO2>ZrO2-TiO2>V2O5-TiO2- L'analyse FT-IR de l'adsorption de la pyridine in situ montre que les trois systèmes présentent des sites acides de Lewis, alors que le 15%V2O5-TiO2 présente en plus les sites de Brönsted.Nous avons étudié aussi l'influence de divers paramètres expérimentaux sur la réaction d'époxydation du cyclohexène. Les résultats des tests catalytiques montrent que :- Les meilleurs résultats sont obtenus pour le système V2O5-TiO2.- Les meilleurs solvants sont l'heptane et l'acétonitrile qui donnent une bonne activité catalytique et une bonne sélectivité en époxyde.- La réaction d'époxydation du cyclohexène est une réaction du second ordre.- Le catalyseur 20% V2O5-TiO2 est stable au cours de la réaction catalytique et recyclable. / The aim of this work is: (i) to prepare mixed oxides X%MxOy-TiO2 (M = V, Zr and Si), (X = 5, 10, 15 and 20 wt.-% MxOy) by sol-gel method followed by calcination at 500°C, (ii) to characterize the prepared samples by different methods of physicochemical analysis (AAF, ICP, XRD, BET, TG-DTA and FT-IR) and (iii) to study their reactivity in the epoxidation of cyclohexene. According to the characterization results, we found that:- The XRD analysis shows that, for the three systems, TiO2 anatase has been evidenced. The best crystallinity was observed for the V2O5-TiO2 system. The TiO2 rutile phase has been obeserved for sample 5% ZrO2-TiO2, while the SiO2 phase is amorphous and ZrO2 phase was not detected.- Analysis by nitrogen adsorption, gave the sorting of these systems according to their specific surface areas as follows: SiO2-TiO2 > ZrO2-TiO2 > TiO2-V2O5- The FTIR analysis of in situ pyridine adsorption showed that all three systems display Lewis acid sites, whereassample 15% V2O5-TiO2 present Bronsted sites too.We studied the effect of different reaction parameters in the oxidation of cyclohexene. The results of the catalytic tests show that:- The best results are obtained for V2O5-TiO2 system.- The best solvents are heptane and acetonitrile which give good catalytic activity and high epoxide selectivity.- The epoxidation reaction of cyclohexene is a second-order reaction.- The catalyst 20%V2O5-TiO2 is stable during the catalytic reaction and suitable for recycling. / الهدف من هذا العمل هو تحضير أكاسيد المختلطةX%MxOy-TiO2, (M = V, Zr et Si), (X = 5, 10, 15 et 20 %) ، حيث X هو نسبة كتلة MxOy. تشخيص ودراسة نشاطها في اكسدة الهكسن الحلقي بوجود (TBHP) في الطور السائل. تم تحضير هذه أكاسيد المختلطة بطريقة sol-gel و حرقها تحت درجة حرارة 500 وتشخص هذه المواد بطرق مختلفة من التحليل الفيزيائية و الكيميائية (AAF, ICP, DRX, BET, ATG-ATD et FT-IR)وفقا لنتائج التشخيص نستخلص مايلي:-التحليل DRX تبين أن الأنظمة الثلاثة لديها طور anatase TiO2 ولوحظ أفضل التبلور في وجود نظام V2O5. وقد وجد طور rutile من TiO2 عن عينة 5%ZrO2-TiO2، في حين أن طور SiO2 غير متبلور ولم يتم الكشف طور ZrO2- تحليل عن طريق امتزاز النيتروجين BET ويعطي تصنيف هذه النظم حسب المساحة المحددة على النحو التالي:SiO2-TiO2> ZrO2-TiO2> TiO2-V2O5- أظهر تحليل FTIR بامتصاص بيريدين أن جميع الأنظمة الثلاثة لديها مواقع حمض لويس، في حين أن15%V2O5-TiO2 لديه بالإضافة مواقع برونستيد.درسنا أيضا تأثيرعدة عوامل التجريبية على تفاعل اكسدة الهكسن الحلقي بما في ذلك تأثير المذيب، كتلة المحفز، دراسة استقرار المحفز ودراسة الحركية التفاعل لتحسين المردودية و الانتقائية لإيبوكسيد.نتائج التفاعل المحفز تظهر أن:- تم الحصول على أفضل النتائج بوجود النظام V2O5-TiO2- أفضل المذيبات هي هيبتان والأسيتونيتريل لإعطاء فعالية جيدة وانتقائية عالية لإيبوكسيد.- تم الحصول على أفضل النتائج في حالة 100 و 150 ملغ مع تحويل 46 و 53٪ على التوالي. ولوحظ ان أفضل الانتقائية لإيبوكسيد (79٪) سجلت عند 100 ملغ من20 % V2O5-TiO2.رتبة تفاعل اكسدة الهكسن الحلقي في وجود 150 ملغ من 20 % V2O5-TiO2هي رتبة اثنين. المحفز 20 % V2O5-TiO2 هو مستقر خلال تفاعل تحفيز ومناسبة لإعادته عدة مرات.كلمات المفتاحية: سول جل، أكاسيد المختلطة، أكسدة الهكسن الحلقي، أوكسيد الهكسن الحلقي V2O5-TiO2, ZrO2-TiO2, SiO2-TiO2 ,

<p>Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO₂, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta₂O₅, zirconium oxide, ZrO₂ and hafnium oxide, HfO₂.</p><p>This thesis describes new chemical vapour deposition (CVD) and atomic layer deposition (ALD) processes for deposition of Ta₂O₅, ZrO₂ and HfO₂ using the metal iodides as starting materials. The layer-by-layer growth in ALD was also studied in real time with a quartz crystal microbalance (QCM) to examine the process characteristics and to find suitable parameters for film deposition.</p><p>All the processes presented here produced high-purity films at low deposition temperatures. It was also found that films deposited on Pt substrates generally crystallise at lower temperature, or with lower thickness, than on silicon and single-crystalline oxide substrates. Films grown on MgO(001) and α-Al₂O₃(001) substrates were strongly textured or epitaxial. For example, monoclinic HfO₂ deposited on MgO(001) were epitaxial for deposition temperatures of 400-500 C in ALD and 500-600 C in CVD. Electrical characterisation showed that the crystallinity of the films had a strong effect on the dielectric constant, except in cases of very thin films, where the dielectric constant was more dependent on layer thickness.</p>

Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO2, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta2O5, zirconium oxide, ZrO2 and hafnium oxide, HfO2. This thesis describes new chemical vapour deposition (CVD) and atomic layer deposition (ALD) processes for deposition of Ta2O5, ZrO2 and HfO2 using the metal iodides as starting materials. The layer-by-layer growth in ALD was also studied in real time with a quartz crystal microbalance (QCM) to examine the process characteristics and to find suitable parameters for film deposition. All the processes presented here produced high-purity films at low deposition temperatures. It was also found that films deposited on Pt substrates generally crystallise at lower temperature, or with lower thickness, than on silicon and single-crystalline oxide substrates. Films grown on MgO(001) and α-Al2O3(001) substrates were strongly textured or epitaxial. For example, monoclinic HfO2 deposited on MgO(001) were epitaxial for deposition temperatures of 400-500 C in ALD and 500-600 C in CVD. Electrical characterisation showed that the crystallinity of the films had a strong effect on the dielectric constant, except in cases of very thin films, where the dielectric constant was more dependent on layer thickness.