Akademisk avhandling--Teologi--Åbo, 1983. / Bibliogr. p. 289-297.

Rheumatoid arthritis is an auto-immune inflammatory disease that leads to stiff and swollen joints. Patients also have severe bone destruction of the affected joints and another common symptom of rheumatoid arthritis is a generalised bone loss that can lead to osteoporosis. Currently, there are many treatments for rheumatoid arthritis, which provide a recession of the inflammatory symptoms. However, none of these treatments are able to provide a complete protection against the rheumatoid arthritis-induced bone loss. Furthermore, the most effective available treatments such as glucocorticoids or the new biological drugs are not optimal since they either cause severe side effects or are very expensive and difficult to produce. Hence, there is a real need for new cost-effective treatments that can act on both inflammation and bone loss symptoms of rheumatoid arthritis. ABD compounds are small molecules, relatively easy to synthesize at reasonable cost. In this thesis, I discuss the effects of these small molecules on both rheumatoid arthritis-induced inflammation and bone loss. Daily treatments with the ketones ABD328 and ABD345, or with the sulphonamide ABD455 prevent inflammation in an animal model of rheumatoid arthritis. Furthermore, micro-CT and histology analysis showed that these treatments also provide a reliable protection against bone destruction of affected joints and generalised bone loss. In vitro data showed that this protective effect on bone was osteoclast specific. Indeed, Ishow here that treatment of other bone cells (such as osteoblasts or macrophages) with ABD compounds does not affect their biology. The mechanism of action of these compounds has also been studied and I show here that ABD compounds inhibit both inflammation and osteoclastogenesis by inhibiting the signalling pathways that are activated in response to pro-inflammatory cytokines such as TNF . This work led to the design and synthesis of further improved compounds, such as ABD599, that are currently considered as very interesting candidates for clinical trials. In conclusion, the ABD compounds, as small cost-effective molecules, represent a novel class of rheumatoid arthritis treatments by acting on both inflammation and bone loss symptoms of the disease.

Secondary ion mass spectrometry (SIMS) has been employed tostudy the spatial distributions resulting from mass transportby diffusion and ion implantation in single crystal siliconcarbide (SiC). By a systematic analysis of this data,fundamental processes that govern these phenomena have beenderived. The acceptor atoms Al and B are known to be electricallypassivated by H in SiC. By studying the thermally stimulatedredistribution of implanted deuterium (2H) in various acceptordoped structures, it is found that hydrogen forms complexeswith the doping atoms, and also interacts strongly withimplantation induced defects. A comprehensive understanding ofthe formation and dissociation kinetics of these complexes hasbeen obtained. The extracted effective capture radius for theformation of 2H-B complexes is in good agreement with thatexpected for a coulomb force assisted trapping mechanism. Thelarge difference of 0.9 eV in the extracted dissociationenergies for the 2H-Al and 2H-B complexes suggests that theatomic configurations of the two complexes are significantlydifferent. Furthermore, by studying the migration behavior of Hin the presence of built-in electric fields, it is concludedthat all of the mobile H is in the positive charge state inp-type SiC. A large number of implantations have been performed withrespect to ion mass, energy, fluence, and crystal orientation.The electronic stopping cross sections in the low velocityregime for ions with atomic numbers 1 ≤ Z1 ≤ 15have been extracted from the ion range distributions. Theydisplay both Z1-oscillations and a smaller than velocityproportional stopping for ions with Z1 ≤ 8, in agreementwith previous reports for other materials. Furthermore, thedegree of ion channeling in various major axial and planarchannels of the 6H and 4H-SiC crystal has been explored. Twotypes of ion implantation simulators have been developed. Onebased on a statistical, data-base approach, and one atomisticsimulator, based on the binary collision approximation (BCA).By fitting BCA simulated profiles to the experimental profiles,detailed information about the electronic stopping andimplantation induced damage is extracted. In addition, thevacancy-related damage caused by the implantations has beeninvestigated by positron annihilation spectroscopy (PAS). Twotypes of implantation induced positron traps have been isolatedand are tentatively identified as a Si vacancy (VSi) and a Si-Cdivacancy (VSiVC). The extension of detected VSi is in goodagreement with that predicted by BCA simulations, and forimplantations with heavier ions VSi are revealed at far greaterdepths than the mean projected ion range due to deeplypenetrating channeled ions.

<p>Secondary ion mass spectrometry (SIMS) has been employed tostudy the spatial distributions resulting from mass transportby diffusion and ion implantation in single crystal siliconcarbide (SiC). By a systematic analysis of this data,fundamental processes that govern these phenomena have beenderived.</p><p>The acceptor atoms Al and B are known to be electricallypassivated by H in SiC. By studying the thermally stimulatedredistribution of implanted deuterium (2H) in various acceptordoped structures, it is found that hydrogen forms complexeswith the doping atoms, and also interacts strongly withimplantation induced defects. A comprehensive understanding ofthe formation and dissociation kinetics of these complexes hasbeen obtained. The extracted effective capture radius for theformation of 2H-B complexes is in good agreement with thatexpected for a coulomb force assisted trapping mechanism. Thelarge difference of 0.9 eV in the extracted dissociationenergies for the 2H-Al and 2H-B complexes suggests that theatomic configurations of the two complexes are significantlydifferent. Furthermore, by studying the migration behavior of Hin the presence of built-in electric fields, it is concludedthat all of the mobile H is in the positive charge state inp-type SiC.</p><p>A large number of implantations have been performed withrespect to ion mass, energy, fluence, and crystal orientation.The electronic stopping cross sections in the low velocityregime for ions with atomic numbers 1 ≤ Z1 ≤ 15have been extracted from the ion range distributions. Theydisplay both Z1-oscillations and a smaller than velocityproportional stopping for ions with Z1 ≤ 8, in agreementwith previous reports for other materials. Furthermore, thedegree of ion channeling in various major axial and planarchannels of the 6H and 4H-SiC crystal has been explored. Twotypes of ion implantation simulators have been developed. Onebased on a statistical, data-base approach, and one atomisticsimulator, based on the binary collision approximation (BCA).By fitting BCA simulated profiles to the experimental profiles,detailed information about the electronic stopping andimplantation induced damage is extracted. In addition, thevacancy-related damage caused by the implantations has beeninvestigated by positron annihilation spectroscopy (PAS). Twotypes of implantation induced positron traps have been isolatedand are tentatively identified as a Si vacancy (VSi) and a Si-Cdivacancy (VSiVC). The extension of detected VSi is in goodagreement with that predicted by BCA simulations, and forimplantations with heavier ions VSi are revealed at far greaterdepths than the mean projected ion range due to deeplypenetrating channeled ions.</p>

This thesis seeks to study in depth the influence of Imam al-Juwayni on Imam al-Ghazali's discussion of theology and whether or not the latter's ideas are properly derived from the former. The first chapter deals with an analysis of the life of both the Imams against the background of the religious milieu of their time. The second chapter discuss the views of the two Imams on Ilm al-Kalam. The third chapter attempts to compare and contrast Imam al-Juwayni's and Imam al- Ghazali's approach to the doctrine of the origin of the world and the existence of God. In the fourth chapter we assess the views of the two Imams on the problem of the attributes of God. The fifth chapter deals with the question of human actions and free will. The final chapter present their views on prophethood and messengership. While many Islamic scholars have a vague notion that Imam al-Ghazali's ideas on theology depend heavily upon Imam al-Juwayni, this thesis attempts to prove that Imam al-Ghazali's theological position and views have been greatly influenced by his teacher, Imam al-Juwayni. This work sets out to show this in detail.

Thèse--Univ de Paris. / Publications de l'Institut français d'archéologie orientale. "Bibliographie" p. [633]-664.

Thèse--Univ de Paris. / Publications de l'Institut français d'archéologie orientale. "Bibliographie" p. [633]-664.

Diss.--Uppsala--University, 2002. / Bibliogr. p. 367-383.

Dissertation--Bamberg--Otto-Friedrich-Universität, 1999. / Bibliogr. p. 218-243.

No description available.