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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Theoretical and Experimental Studies on the Formation of Metal Borides

Rajan, Lisa 01 May 2011 (has links)
AN ABSTRACT OF THE THESIS OF Lisa Rajan, for the Master of Science degree in Mechanical Engineering, presented on April 1, 2011, at Southern Illinois University Carbondale. TITLE: THEORETICAL AND EXPERIMENTAL STUDIES ON THE FORMATION OF METAL BORIDES MAJOR PROFESSOR: Dr. Rasit Koc Formation studies were done on six metal borides, TiB2, ZrB2, HfB2, AlB2, CaB6, and LaB6. The goal of this research is to research materials used for coatings on bipolar plates used in polymer electrolyte, PE, fuel cells. Theoretical calculations were done with formation equations from these six materials. Software used was HSC Chemistry version 5.0. Each equation was fully entered, and the range of formation temperature was narrowed till a value was obtained. Experimental work was done on TiB2 using thermogravimetric analysis and x-ray diffraction. Studies were done on carbon coated TiO2 precursors mixed with B4C and mixed carbon and TiO2 precursors mixed with B4C. The studies show that TiB2 is a very excellent material and easy to make. ZrB2, HfB2 and CaB6 are also easily processed and available for use in the market. AlB2 needs more research so that effective conclusions can be made about its formation temperature and suitable methods of production. Although made by methods uncommon to those studied in this work, LaB6 is already in commercial production and used in electron microscopes. Examination of previous experimental studies shows that the reduction reaction methods and formation of powders in an autoclave are the most consistent methods of metal boride formation. Calculations in the HSC 5.0 software confirmed that. When reactions for these methods were done, they consistently produced precise formation temperatures. Several variations of the combined reduction reaction were found in the literature, and all produced the same theoretical formation temperature. Molar amounts did not affect this temperature. Each method produced submicron particle powders. Thermodynamic data was useful in determining the certainty of each reaction being done experimentally. Most reactions were thermodynamically possible with a few exceptions. Change in enthalpy, ∆H, change in entropy, ∆S, change in Gibb's free energy, ∆G, and the formation constant K were all factors that were calculated and used to describe metal boride formation. The experimental studies showed that coated precursors have a lower temperature at which the reaction begins. The process is more gradual for coated precursors, although both coated and mixed precursors reach a pure TiB2 phase by 1400°C. The mixed precursor had a higher phase of purity than the coated precursor at 1400°C.
2

A Position-Space View on Chemical Bonding in Metal Digallides with AlB2 Type of Structure and Related Compounds

Quaresma Faria, Joao Rodolfo 26 March 2018 (has links) (PDF)
The main focus of this work was to investigate substitution effects on the chemical bonding in compounds of AlB 2 -type and related structure types. Delocalization indices within the QTAIM approach and the topological analysis of the ELI functionals were used as tools to describe the bonding situation in digallides and diborides. Digallides of AlB 2 -type were found only within group I and II; for CaGa 2 (meta-stable phase), SrGa 2 , BaGa 2 , YGa 2 and LaGa 2 compounds. Within these compounds, QTAIM analysis showed similar trend as previously found in diborides. That is, along the period in the Periodic Table, metal-triel interactions increase at the expense of in-plane (triel-triel) ab interactions (Tr=triel). However, transition metal diborides adopt the AlB 2 -type up to group VI. To understand this difference, we simulated transition metal (TM) digallides and diborides up to group VI in the AlB 2 -type. Additionally, the puckered variants diborides ReB 2 and OsB 2 were also simulated in the AlB 2 -type. With filling of d shell, there is a delicate balance between increase of TM–Tr and decrease of in-plane (Tr–Tr) ab electron sharing. This balance is maintained as long as interlayer interactions in the c direction (Tr–Tr ) c and (TM–TM ) c are not relatively too high in comparison to in-plane electron sharing. In contrast to TM B 2 of AlB 2 -type, digallides in the same structure type build up strong interlayer interactions for early transition metal elements. Our results showed that within digallides, a relatively strong increase in interlayer electron sharing (Ga–Ga) c and (TM–TM ) c takes place. Such increase occurs already for ScGa 2 and TiGa 2 . On the other hand, diborides show a steady increase in electron sharing of TM –B and (TM–TM ) c , but not of (B–B) c . Therefore, it is reasonable to suggest that diborides will tend to adopt a 3D network composed of boron and transition metal atoms (ReB 2 and RuB 2 types). The additional high (Ga–Ga) c interlayer interactions indicate a tendency for digallides to form 3D networks composed only by gallium atoms, characteristic of CaGa 2 (CaIn 2 -type) and ScGa 2 (KHg 2 -type). The counterbalancing bonding effects of in-plane and out-of-plane interactions that give the chemical flexibility of the AlB 2 -type in diborides is thus disrupted in AlB 2 -type digallides by a further enhanced degree of interlayer interactions (Ga–Ga) c and (TM –TM ) c . This results in a smaller number of digallides than that of diborides in AlB 2 -type. The most conspicuous difference between diborides and digallides of AlB 2 -type is in the representation of the B – B and Ga – Ga bonds revealed by the ELI- D topology. Whereas AlB 2 -type diborides exhibit one ELI-D attractor at the B – B midpoint, AlB 2 -type digallides exhibit two ELI-D attractors symmetrically opposite around the Ga – Ga bond midpoint. We utilized the E 2 H 4 (E=triel, tetrel ) molecular series in the D 2h point group symmetry as model systems for solid state calculations. In particular, we addressed the appearance of ELI- D double maxima for Ga – Ga, by using orbital decomposition within the ELI framework. The ELI-D topology changes along the 13th group T r 2 H 4 series. Whereas B 2 H 4 and Al 2 H 4 exhibit one ELI-D attractor representing the Tr–Tr bond, Ga 2 H 4 and In 2 H 4 give rise to two ELI-D attractors. Partial ELI-D allows the orbital decomposition of the electron density. Partial ELI-q gives access to the decomposition of a two-particle property, which is given by the Fermi-hole curvature. We have found that the d-orbitals enable the formation of the two ELI-D attractors through pairing contributions. This has a net effect of lowering electron localizability at the Ga – Ga bond midpoint. Namely, the different ELI-D topology of Ga – Ga and B – B bonds stems from the contributions of d-orbitals to orbital pairing. We have also investigated the bonding situation in transition metal diborides of ReB 2 -type (MnB 2 , TcB 2 , ReB 2) and RuB 2 -type (OsB 2 , RuB 2). One can consider these two structure types as an extension of the trend found in TM B 2 of AlB 2 -type: an increase in TM –B interactions and an enhanced three-center bonding. The change in the structure type results in a puckered layer of boron atoms with electrons equally shared between B – B and TM –B. However, TM –B bonds exhibit a high three-center character. The ELI-D/QTAIM intersection technique also revealed a high participation of TM in the B – B bonding basin population. Moreover, ELI-D topology in the ReB 2 -type also discloses a seemingly important Re 3 three-center interaction along the flat layer of Re atoms. Such basin is absent in MnB 2 , which coincides with the fact that MnB 2 was only observed in the AlB 2 -type. In this regard, we concluded that the 3D network consists not only of covalent B – B bonds, but also of TM –B bonds.
3

Matrices nanostructurées obtenues par voies liquides : application aux composites à matrice céramique / Nanostructured matrixes processed by liquid route : application to CMCs

Le Ber, Simon 19 October 2011 (has links)
Un nouveau procédé d’élaboration de CMC par voie liquide a été développé ; il met en œuvre l’utilisation de charges réactives afin d’obtenir un composite à bas coût. Afin de préserver le renfort en fibres Nicalon, ces charges doivent réagir sous azote à une température inférieure à 1100°C. Deux charges réactives répondant ces critères et présentant une prise de volume intéressante ont été identifiées : AlB2 et TiSi2.Le broyage planétaire de ces charges a été étudié afin d’évaluer l’influence de l’affinement de la microstructure sur les propriétés. Des poudres de surface spécifique élevée et de granulométrie proche l’échelle nanométrique ont été obtenues. La nitruration des charges a été analysée et un effet de taille a pu être mis en évidence sur la réactivité du TiSi2.Les poudres broyées ont été mises en suspension pour être imprégnées au sein de préformes. Les échantillons ont ensuite subi une étape de nitruration à 1100°C, cruciale pour la cohésion de la matrice. Un cycle PIP a ensuite été réalisé pour diminuer la porosité résiduelle.L’oxydation des matériaux obtenus a été étudiée dans des conditions correspondant à l’application aéronautique visée. Les propriétés mécaniques des composites élaborés ont été évaluées par des essais de flexion 3 points. La combinaison de l’utilisation de la charge réactive TiSi2 et d’un polysiloxane a permis d’obtenir un composite dont la contrainte à rupture est remarquable compte tenu du faible nombre d’étapes nécessaires à son élaboration par voie liquide. / A new CMC manufacturing process has been developped ; the active filler technique is used in order to obtain a low cost composite. Active fillers must react under nitrogen atmosphere at a temperature below 1100°C so that the Nicalon fiber reinforcement is not damaged. Two active fillers meeting these criteria and offering an interesting volume expansion have been identified : AlB2 et TiSi2.The planetary milling of these fillers has been explored in order to assess the influence of microstructure refinement on properties. Powders with high specific surface areas and of granulometry close to the nanometric scale were obtained. The nitridation of the active fillers was examined and a size effect on TiSi2 reactivity was displayed.Milled powders were used in colloidal suspensions in order to be impregnated in preforms. Samples were subsequently nitrided at 1100°C ; this step was crucial for matrix cohesion. A PIP cycle was eventually performed in order to reduce residual porosity.The oxydation behaviour of materials was studied in conditions corresponding to the considered aeronautics application. Mechanical properties of composites were estimated by 3 point bending tests. Combining the use of TiSi2 and of a polysiloxane enabled to obtain a composite whose maximum bending stress was remarkable considering the limited number of steps required for its processing.
4

A Position-Space View on Chemical Bonding in Metal Digallides with AlB2 Type of Structure and Related Compounds

Quaresma Faria, Joao Rodolfo 05 March 2018 (has links)
The main focus of this work was to investigate substitution effects on the chemical bonding in compounds of AlB 2 -type and related structure types. Delocalization indices within the QTAIM approach and the topological analysis of the ELI functionals were used as tools to describe the bonding situation in digallides and diborides. Digallides of AlB 2 -type were found only within group I and II; for CaGa 2 (meta-stable phase), SrGa 2 , BaGa 2 , YGa 2 and LaGa 2 compounds. Within these compounds, QTAIM analysis showed similar trend as previously found in diborides. That is, along the period in the Periodic Table, metal-triel interactions increase at the expense of in-plane (triel-triel) ab interactions (Tr=triel). However, transition metal diborides adopt the AlB 2 -type up to group VI. To understand this difference, we simulated transition metal (TM) digallides and diborides up to group VI in the AlB 2 -type. Additionally, the puckered variants diborides ReB 2 and OsB 2 were also simulated in the AlB 2 -type. With filling of d shell, there is a delicate balance between increase of TM–Tr and decrease of in-plane (Tr–Tr) ab electron sharing. This balance is maintained as long as interlayer interactions in the c direction (Tr–Tr ) c and (TM–TM ) c are not relatively too high in comparison to in-plane electron sharing. In contrast to TM B 2 of AlB 2 -type, digallides in the same structure type build up strong interlayer interactions for early transition metal elements. Our results showed that within digallides, a relatively strong increase in interlayer electron sharing (Ga–Ga) c and (TM–TM ) c takes place. Such increase occurs already for ScGa 2 and TiGa 2 . On the other hand, diborides show a steady increase in electron sharing of TM –B and (TM–TM ) c , but not of (B–B) c . Therefore, it is reasonable to suggest that diborides will tend to adopt a 3D network composed of boron and transition metal atoms (ReB 2 and RuB 2 types). The additional high (Ga–Ga) c interlayer interactions indicate a tendency for digallides to form 3D networks composed only by gallium atoms, characteristic of CaGa 2 (CaIn 2 -type) and ScGa 2 (KHg 2 -type). The counterbalancing bonding effects of in-plane and out-of-plane interactions that give the chemical flexibility of the AlB 2 -type in diborides is thus disrupted in AlB 2 -type digallides by a further enhanced degree of interlayer interactions (Ga–Ga) c and (TM –TM ) c . This results in a smaller number of digallides than that of diborides in AlB 2 -type. The most conspicuous difference between diborides and digallides of AlB 2 -type is in the representation of the B – B and Ga – Ga bonds revealed by the ELI- D topology. Whereas AlB 2 -type diborides exhibit one ELI-D attractor at the B – B midpoint, AlB 2 -type digallides exhibit two ELI-D attractors symmetrically opposite around the Ga – Ga bond midpoint. We utilized the E 2 H 4 (E=triel, tetrel ) molecular series in the D 2h point group symmetry as model systems for solid state calculations. In particular, we addressed the appearance of ELI- D double maxima for Ga – Ga, by using orbital decomposition within the ELI framework. The ELI-D topology changes along the 13th group T r 2 H 4 series. Whereas B 2 H 4 and Al 2 H 4 exhibit one ELI-D attractor representing the Tr–Tr bond, Ga 2 H 4 and In 2 H 4 give rise to two ELI-D attractors. Partial ELI-D allows the orbital decomposition of the electron density. Partial ELI-q gives access to the decomposition of a two-particle property, which is given by the Fermi-hole curvature. We have found that the d-orbitals enable the formation of the two ELI-D attractors through pairing contributions. This has a net effect of lowering electron localizability at the Ga – Ga bond midpoint. Namely, the different ELI-D topology of Ga – Ga and B – B bonds stems from the contributions of d-orbitals to orbital pairing. We have also investigated the bonding situation in transition metal diborides of ReB 2 -type (MnB 2 , TcB 2 , ReB 2) and RuB 2 -type (OsB 2 , RuB 2). One can consider these two structure types as an extension of the trend found in TM B 2 of AlB 2 -type: an increase in TM –B interactions and an enhanced three-center bonding. The change in the structure type results in a puckered layer of boron atoms with electrons equally shared between B – B and TM –B. However, TM –B bonds exhibit a high three-center character. The ELI-D/QTAIM intersection technique also revealed a high participation of TM in the B – B bonding basin population. Moreover, ELI-D topology in the ReB 2 -type also discloses a seemingly important Re 3 three-center interaction along the flat layer of Re atoms. Such basin is absent in MnB 2 , which coincides with the fact that MnB 2 was only observed in the AlB 2 -type. In this regard, we concluded that the 3D network consists not only of covalent B – B bonds, but also of TM –B bonds.

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