The aluminum oxide growth rate for aluminum protected with 2.4 nm of aluminum fluoride has been determined. We show that a 2.4 nm aluminum fluoride layer does not prevent aluminum from oxidation but does significantly retard the oxide growth – decreasing the oxide layer thickness from 1 nm in less than an hour to 0.9 nm over 116 hours. Additionally, the optical constants for aluminum oxide growing under an aluminum fluoride barrier layer have been determined – showing an increase in absorption at high energies for Al2O3 forming at room temperature as compared to highly ordered Al2O3 formed at high temperatures.