Global ETD Search

51	Acoustic wave propagation and amplification in multilayers. Fahmy, Aly Hassan. January 1973 (has links) No description available. Sound-waves Amplifiers (Electronics) Surface waves
52	Simulation of radiation-induced parametric degradation in electronic amplifiers Barbara, Nabil Victor, 1964- January 1989 (has links) Many high performance amplifiers use power MOSFETs in their output stages, especially in operational amplifier applications whenever high current or power is needed. MOSFETs have advantages over bipolar transistors in amplifier output stage because MOSFETs are majority carrier devices. The result is wide frequency response, fast switching and better linearity than power bipolar transistors. But unlike bipolar circuits, which are relatively tolerant of ionizing radiation, MOSFETs may suffer severe parametric degradation at low total-dose levels. The effects of ionizing radiation on MOSFETs are discussed, and the performance of an amplifier circuit that uses a complementary MOSFET source follower in its output stage is simulated to examine the effect of MOSFET radiation damage on amplifier performance. An increase in power dissipation was the most significant degradation caused by ionizing radiation. Amplifiers (Electronics)
53	Comparison of noise performance of capacitive sensing amplifiers Strait, Thomas J. January 2006 (has links) Thesis (M.S.)--State University of New York at Binghamton, Department of Electrical and Computer Engineering, 2006. / Includes bibliographical references.
54	Analysis and design of CMOS RF LNAs with ESD protection Chandrasekhar, Vinay 01 April 2002 (has links) An analysis that accounts for the effect of standard electrostatic discharge (ESD) structures on critical LNA specifications of noise figure, input matching and gain is presented. It is shown that the ESD structures degrade LNA performance particularly for higher frequency applications. Two LNAs, one with ESD protection and one without, which operate at 2.4 GHz have been fabricated in a 0.l5��m CMOS process. The LNAs feature one of the best reported performances for CMOS LNAs to date. The LNA with ESD protection achieves a gain of 12dB, a NF of 2.77dB and an IIP3 of 2.4dBm with a power consumption of 4.65mW. The LNA without ESD protection achieves a gain of 14dB, a NF of 2.36dB and an 11P3 of -2.2dBm with a power consumption of 4.65mW. / Graduation date: 2002 Amplifiers (Electronics) -- Design
55	Desensitized CMOS low noise amplifiers / Banerjee, Gaurab, January 2006 (has links) Thesis (Ph. D.)--University of Washington, 2006. / Vita. Includes bibliographical references (p. 97-101).
56	Investigation of electronic switching for analog computer applications Downey, James Bryant, 1940- January 1964 (has links) No description available. Electronic analog computers -- Circuits. Switching circuits. Amplifiers (Electronics)
57	Field effect transistor noise model analysis and low noise amplifier design for wireless data communications Yoo, Seungyup 12 1900 (has links) No description available. Wireless communication systems Amplifiers (Electronics)
58	Investigation of GaAs MESFET amplifier topologies for optoelectronic receiver applications Chun, Carl S. P.(Shun Ping) 05 1900 (has links) No description available. Integrated circuits Optoelectronic devices Optical interconnects Amplifiers (Electronics)
59	A wideband CMOS low-noise amplifier for UHF applications Lo, Ivy Iun January 2005 (has links) Thesis (M.S.)--University of Hawaii at Manoa, 2005. / Includes bibliographical references (leaves 95-98). / xii, 98 leaves, bound ill. 29 cm
60	Linearly repeatered communication systems using optical amplifiers / Pimpalkhare, Mangesh S., January 1992 (has links) Thesis (M.S.)--Virginia Polytechnic Institute and State University, 1992. / Vita. Abstract. Includes bibliographical references (leaves 77-79). Also available via the Internet.

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