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Electrical characterization of n-type aluminum gallium arsenideKim, Seung-bae 11 July 1991 (has links)
Graduation date: 1992
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High electric field current transport in semi-insulating GaAs and InPLuo, Yilin. January 2000 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2001. / Includes bibliographical references (leaves 230-253).
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Theoretical and experimental studies of electronic states in InAs/GaAs self-assembled quantum dotsWen, Yuan, January 2009 (has links)
Thesis (M. Phil.)--University of Hong Kong, 2010. / Includes bibliographical references (leave 60). Also available in print.
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Investigation of deep level impurities (oxygen and chromium) in bulk gallium arsenide and Au-GaAs Schottky diodes.Huang, Chern I., January 1973 (has links)
Thesis--University of Florida. / Description based on print version record. Typescript. Vita. Bibliography: leaves 71-72.
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Gallium arsenide based MBE-grown quantum structures for near infrared wavelength applicationsGovindaraju, Sridhar 25 April 2011 (has links)
Not available / text
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Carrier dynamics in quantum dot and GaAs-based quantum dot cascade laserCao, Chuanshun, 1972- 02 August 2011 (has links)
Not available / text
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Development of a deep level transient spectrometer and some deep levelstudies of Gallium ArsenideChavva, Venkataramana Reddy. January 1993 (has links)
published_or_final_version / Physics / Master / Master of Philosophy
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Electric field distribution in metal/semi-insulating GaAs contacts investigated by positron lifetime techniqueShek, Yiu-fai., 石耀輝. January 1999 (has links)
published_or_final_version / Physics / Master / Master of Philosophy
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Positron annihilation spectroscopic studies of GAAS and INP related systems凌志聰, Ling, Chi-chung, Francis. January 1996 (has links)
published_or_final_version / Physics / Doctoral / Doctor of Philosophy
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A gallium arsenide four-quadrant analog multiplier based on the quarter-square algebraic identityThrower, Mark Laurence 08 1900 (has links)
No description available.
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